WO2010009297A3 - Hybrid heterojunction solar cell fabrication using a doping layer mask - Google Patents

Hybrid heterojunction solar cell fabrication using a doping layer mask Download PDF

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Publication number
WO2010009297A3
WO2010009297A3 PCT/US2009/050811 US2009050811W WO2010009297A3 WO 2010009297 A3 WO2010009297 A3 WO 2010009297A3 US 2009050811 W US2009050811 W US 2009050811W WO 2010009297 A3 WO2010009297 A3 WO 2010009297A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
doping layer
solar cell
back surface
layer
Prior art date
Application number
PCT/US2009/050811
Other languages
French (fr)
Other versions
WO2010009297A2 (en
Inventor
Timothy W. Weidman
Rohit Mishra
Michael P. Stewart
Yonghwa Chris Cha
Kapila P. Wijekoon
Hongbin Fang
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801301963A priority Critical patent/CN102113132B/en
Publication of WO2010009297A2 publication Critical patent/WO2010009297A2/en
Publication of WO2010009297A3 publication Critical patent/WO2010009297A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
PCT/US2009/050811 2008-07-16 2009-07-16 Hybrid heterojunction solar cell fabrication using a doping layer mask WO2010009297A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801301963A CN102113132B (en) 2008-07-16 2009-07-16 Hybrid heterojunction solar cell fabrication using a doping layer mask

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8136208P 2008-07-16 2008-07-16
US61/081,362 2008-07-16
US12153708P 2008-12-10 2008-12-10
US61/121,537 2008-12-10

Publications (2)

Publication Number Publication Date
WO2010009297A2 WO2010009297A2 (en) 2010-01-21
WO2010009297A3 true WO2010009297A3 (en) 2011-02-24

Family

ID=41530646

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2009/050811 WO2010009297A2 (en) 2008-07-16 2009-07-16 Hybrid heterojunction solar cell fabrication using a doping layer mask
PCT/US2009/050808 WO2010009295A2 (en) 2008-07-16 2009-07-16 Hybrid heterojunction solar cell fabrication using a metal layer mask

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2009/050808 WO2010009295A2 (en) 2008-07-16 2009-07-16 Hybrid heterojunction solar cell fabrication using a metal layer mask

Country Status (4)

Country Link
US (2) US8183081B2 (en)
CN (1) CN102113132B (en)
TW (2) TWI390756B (en)
WO (2) WO2010009297A2 (en)

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