CN106601862A - Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell - Google Patents
Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell Download PDFInfo
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- CN106601862A CN106601862A CN201510664795.0A CN201510664795A CN106601862A CN 106601862 A CN106601862 A CN 106601862A CN 201510664795 A CN201510664795 A CN 201510664795A CN 106601862 A CN106601862 A CN 106601862A
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- wool
- silicon
- making herbs
- silicon chip
- solution
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000002310 reflectometry Methods 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 42
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000243 solution Substances 0.000 claims abstract description 29
- 239000011259 mixed solution Substances 0.000 claims abstract description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 11
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- 230000010355 oscillation Effects 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims description 35
- 235000008216 herbs Nutrition 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 239000003513 alkali Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- 230000018044 dehydration Effects 0.000 abstract 1
- 238000006297 dehydration reaction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a texturing method for reducing the reflectivity of a monocrystalline silicon heterojunction solar cell. The method comprises a step of carrying out damage layer removing processing on the a silicon surface by using an alkali solution, a step of cleaning the silicon by using an ammonia and hydrogen peroxide mixed solution, a step of texturing by using a KOH or NaOH solution and a texturing additive mixed solution, wherein the texturing is carried out in the ultrasonic oscillation frequency of 40-100kHz and the ultrasonic power control of 50-500W, a step of cleaning the textured silicon by using a hydrochloric acid and hydrogen peroxide mixed solution, and removing the metal residual at the surface of the silicon, a step of carrying out dehydration processing on the silicon which is subjected to texturing by using a hydrofluoric acid solution, and slowly pulling the silicon out, and a step of drying the silicon. According to the method, the mode of ultrasonic oscillation is added in the texturing process, the bubbles generated at the surface of the silicon due to a chemical reaction is rapidly removed, the improvement of the uniformity of a texture is facilitated, the average reflectivity of incident light at the surface of the textured silicon is reduced for more than 1%, and thus the output current of the cell is raised.
Description
Technical field
The present invention relates to crystal silicon solar energy battery field, more particularly to a kind of reduction monocrystalline silicon heterojunction
The etching method of solar battery sheet reflectance.
Background technology
Monocrystalline silicon heterojunction solar cell adopts amorphous silicon thin-film materials as emission layer and passivation layer,
With higher open-circuit voltage and with relatively low temperature coefficient.In addition in order to the photoelectricity for improving battery turns
Efficiency is changed, it is desirable to reduce reflection of the silicon chip surface to sunlight, to improve short circuit current.
The process of silicon chip surface matteization is to reduce the important step of silicon chip surface reflectance, current matte
It is using KOH the or NaOH alkaline corrosion solution pair containing flocking additive to process conventional way
Monocrystalline silicon sheet surface is corroded, and due to anisotropic corrosion characteristics, can be formed on the surface of silicon chip
Size differs, closely coupled pyramid, and such surface substantially increases falling into for the silicon chip plane of incidence
Photosensitiveness, makes more incident illuminations be absorbed and used by silicon chip surface, so as to reduce silicon chip surface reflection
Rate.
But substantial amounts of hydrogen gas bubbles are produced because alkali and silicon chip react during above-mentioned making herbs into wool, these
Bubble is different from the speed that silicon chip surface departs from, and causes the speed of alkali and the further reaction of silicon chip
It is different so that the pyramid size that silicon chip surface is formed differs, lack of homogeneity, so as to affect light
In the secondary or multiple reflections effect of silicon chip surface, cause the reflectance of silicon chip higher, extinction effect drop
It is low, so as to reduce the output current of cell piece.
The content of the invention
For the problems referred to above, the invention provides a kind of reduction monocrystalline silicon heterojunction solar cell piece is anti-
The etching method of rate is penetrated, existing matteization is solved and is processed the pyramid size that silicon chip surface is formed
Differ, lack of homogeneity causes the reflectance of silicon chip higher, extinction effect is reduced, so as to reduce battery
Output current.
To solve above-mentioned technical problem, the technical solution adopted in the present invention is：One kind reduces monocrystal silicon
The etching method of heterojunction solar battery piece reflectance, methods described includes step：Use strong base solution
Silicon chip surface is carried out to damage layer process；Silicon chip is cleaned with ammonia, hydrogen peroxide mixed solution；
Making herbs into wool is carried out with flocking additive mixed liquor with KOH or NaOH solution, the making herbs into wool is shaken in ultrasound wave
It is 40-100kHz to swing frequency, and ultrasonic power control is carried out in the state of 50-500W；After making herbs into wool
Silicon chip cleaned with hydrochloric acid, hydrogen peroxide mixed solution；Making herbs into wool has been processed silicon chip with hydrofluoric acid solution
Processed is carried out, slice is then lifted slowly：Drying silicon chip.
Further, in the KOH or NaOH solution and flocking additive mixed liquor, KOH or
NaOH solution concentration is 1-5%, and flocking additive concentration is 0.2-0.5%, and the making herbs into wool time is 5-15
Min, making herbs into wool temperature is 80-85 DEG C.
Further, the strong base solution for going to damage used by layer process is concentration 10%-30%
KOH or NaOH solution, the time is 1-5min, and temperature is 75-85 DEG C.
Further, it is described silicon chip is cleaned used by ammonia, hydrogen peroxide mixed solution in, ammonia
Water：Hydrogen peroxide：Water mixed solution ratio is 1:1:10～1:1:5, the time is 3-10min, temperature
Spend for 65-75 DEG C.
Further, during the silicon chip by after making herbs into wool is cleaned with hydrochloric acid, hydrogen peroxide mixed solution, salt
Acid：Hydrogen peroxide：Water mixed solution ratio is 1:1:10～1:1:5, the time is 3-10min, temperature
Spend for 65-75 DEG C.
Further, the silicon chip that the hydrofluoric acid solution has been processed making herbs into wool is carried out in processed
The mass percent of Fluohydric acid. is 1%-6%, and the time is 3-10min, slow after being cleaned with pure water afterwards
Lifting slice.
From the above-mentioned description to present configuration, compared to the prior art, the present invention has as follows
Advantage：The present invention during making herbs into wool by increasing sonic oscillation so that reaction bubble is in time from silicon chip
Surface departs from, and on the one hand can reduce the making herbs into wool response time, on the other hand can be by silicon wafer wool making gold word
Tower size Control improves the uniformity of matte in 2um or so, improves extinction effect so that average anti-
Penetrate rate reduce by more than 1%, reflectance inhomogeneities within 1%, so as to improve cell piece output electricity
Stream.
Description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, the present invention
Schematic description and description be used for explain the present invention, do not constitute inappropriate limitation of the present invention.
In the accompanying drawings：
Fig. 1 is silicon chip SEM figures after making herbs into wool of the present invention；
Fig. 2 is the present invention and prior art making herbs into wool back reflection rate comparison diagram；
Fig. 3 is silicon chip diverse location reflectivity comparison diagram after floss of the present invention；
Fig. 4 is a kind of reduction monocrystalline silicon heterojunction solar cell piece reflectance etching method of the present invention
Process chart.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing
And embodiment, the present invention will be described in further detail.It should be appreciated that described herein concrete
Embodiment only to explain the present invention, is not intended to limit the present invention.
Fig. 2 is the present invention and prior art making herbs into wool back reflection rate comparison diagram, and Fig. 3 is making herbs into wool of the present invention
Silicon chip diverse location reflectivity comparison diagram afterwards, reflection of the shown silicon chip surface to sunlight, to carrying
High short circuit current has very important effect, and the height of reflectance depends on the uniform of silicon chip surface
Property, the present invention makes pyramid size Control in 2um by increasing sonic oscillation mode during making herbs into wool
Left and right, as shown in Figure 1.
As shown in figure 3, the present invention provides a kind of reduction monocrystalline silicon heterojunction solar cell piece reflectance
Etching method include：
Step S101, with strong base solution to silicon chip surface carry out damage layer process.
Step S102, silicon chip is cleaned with ammonia, hydrogen peroxide mixed solution.
Step S103, making herbs into wool is carried out with KOH or NaOH solution and flocking additive mixed liquor, made
Increase sonic oscillation mode during floss, pyramid size Control is in 2um or so.
Step S104, the silicon chip after making herbs into wool is cleaned with hydrochloric acid, hydrogen peroxide mixed solution.
Step S105, the silicon chip processed making herbs into wool with hydrofluoric acid solution carry out processed, then slowly
Lifting slice.
Step S106, drying silicon chip.
Concrete mode is as follows：
Step S101, silicon chip first carry out surface with the KOH or NaOH solution of 10%-30% and go to damage
Hinder layer process, process time is 1-5min, and temperature is 75-85 DEG C, is cleaned with pure water afterwards.
Step S102, by the silicon chip ratio of step S101 be 1:1:10-1:1:5 ammonia/bis-
Oxygen water mixed solution is cleaned.Time is 3-10min, and temperature is 65-75 DEG C, after it is clear with pure water
Wash.
Step S103, the silicon chip of step S102 is mixed with KOH or NaOH solution and flocking additive
Closing liquid carries out making herbs into wool.Wherein KOH or NaOH solution concentration are 1-5%, and flocking additive concentration is
0.2-0.5%, the time is 5-15min, and temperature is 80-85 DEG C.Sonic oscillation power is 40-100kHz,
Ultrasonic power is controlled in 50-500W.
Step S104, the good silicon chip of step S103 making herbs into wool is carried out with hydrochloric acid, hydrogen peroxide mixed solution
Cleaning.Wherein hydrochloric acid：Hydrogen peroxide：Water mixed solution ratio is 1:1:10-1:1:5, the time is 3
- 10min, temperature is 65-75 DEG C, is cleaned with pure water.
Step S105, the hydrofluoric acid solution that the silicon chip mass fraction of step S104 is 1%-6% is entered
Row processed.Time is 3-10min, slow lifting slice after being cleaned with pure water afterwards.
Step S106, by the silicon chip drying of step S105.
The foregoing is only presently preferred embodiments of the present invention, not to limit the present invention, it is all
Any modification, equivalent and improvement for being made within the spirit and principles in the present invention etc., all should include
Within protection scope of the present invention.
Claims (6)
1. it is a kind of reduce monocrystalline silicon heterojunction solar cell piece reflectance etching method, it is characterised in that：
Methods described includes step：
Silicon chip surface is carried out with strong base solution damage layer process；
Silicon chip is cleaned with ammonia, hydrogen peroxide mixed solution；
Making herbs into wool is carried out with flocking additive mixed liquor with KOH or NaOH solution, the making herbs into wool is in ultrasound
Ripple frequency of oscillation is 40-100kHz, and ultrasonic power control is carried out in the state of 50-500W；
Silicon chip after making herbs into wool is cleaned with hydrochloric acid, hydrogen peroxide mixed solution；
The silicon chip processed making herbs into wool with hydrofluoric acid solution carries out processed, and slice is then lifted slowly；
Drying silicon chip.
2. a kind of making herbs into wool for reducing monocrystalline silicon heterojunction solar cell piece reflectance according to claim 1
Method, it is characterised in that：In the KOH or NaOH solution and flocking additive mixed liquor, KOH
Or NaOH solution concentration is 1-5%, flocking additive concentration is 0.2-0.5%, and the making herbs into wool time is 5-15
Min, making herbs into wool temperature is 80-85 DEG C.
3. a kind of making herbs into wool for reducing monocrystalline silicon heterojunction solar cell piece reflectance according to claim 1
Method, it is characterised in that：The strong base solution for going to damage used by layer process is concentration 10%-30%
KOH or NaOH solution, the time is 1-5min, and temperature is 75-85 DEG C.
4. a kind of making herbs into wool for reducing monocrystalline silicon heterojunction solar cell piece reflectance according to claim 1
Method, it is characterised in that：It is described silicon chip is cleaned used by ammonia, hydrogen peroxide mixed solution in,
Ammonia：Hydrogen peroxide：Water mixed solution ratio is 1:1:10～1:1:5, the time is 3-10min, temperature
Spend for 65-75 DEG C.
5. a kind of making herbs into wool for reducing monocrystalline silicon heterojunction solar cell piece reflectance according to claim 1
Method, it is characterised in that：The silicon chip by after making herbs into wool is cleaned with hydrochloric acid, hydrogen peroxide mixed solution,
Hydrochloric acid：Hydrogen peroxide：Water mixed solution ratio is 1:1:10～1:1:5, the time is 3-10min, temperature
Spend for 65-75.
6. a kind of making herbs into wool for reducing monocrystalline silicon heterojunction solar cell piece reflectance according to claim 1
Method, it is characterised in that：The silicon chip that the hydrofluoric acid solution has been processed making herbs into wool carries out processed
In Fluohydric acid. mass percent be 1%-6%, the time is 3-10min, after being cleaned with pure water afterwards
Slow lifting slice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510664795.0A CN106601862A (en) | 2015-10-15 | 2015-10-15 | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510664795.0A CN106601862A (en) | 2015-10-15 | 2015-10-15 | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106601862A true CN106601862A (en) | 2017-04-26 |
Family
ID=58553329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510664795.0A Pending CN106601862A (en) | 2015-10-15 | 2015-10-15 | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell |
Country Status (1)
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
| CN108766869A (en) * | 2018-05-30 | 2018-11-06 | 苏州日弈新电子科技有限公司 | A kind of silicon chip of solar cell slot type cleaning method |
| CN109326660A (en) * | 2018-09-16 | 2019-02-12 | 苏州润阳光伏科技有限公司 | Solar cell monocrystalline silicon substrate flannelette generates technique |
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN112812776A (en) * | 2019-11-15 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Corrosive liquid and preparation method and application thereof |
| CN114447147A (en) * | 2021-12-28 | 2022-05-06 | 苏州腾晖光伏技术有限公司 | Method for improving texturing yield of silicon wafer for solar cell |
| CN115000241A (en) * | 2022-05-27 | 2022-09-02 | 重庆臻宝实业有限公司 | Low-reflectivity monocrystalline silicon and texturing method thereof |
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| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
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| CN112812776A (en) * | 2019-11-15 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Corrosive liquid and preparation method and application thereof |
| CN114447147A (en) * | 2021-12-28 | 2022-05-06 | 苏州腾晖光伏技术有限公司 | Method for improving texturing yield of silicon wafer for solar cell |
| CN115000241A (en) * | 2022-05-27 | 2022-09-02 | 重庆臻宝实业有限公司 | Low-reflectivity monocrystalline silicon and texturing method thereof |
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Application publication date: 20170426 |