WO2009130743A1 - 光素子用パッケージ、半導体発光装置および照明装置 - Google Patents
光素子用パッケージ、半導体発光装置および照明装置 Download PDFInfo
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- WO2009130743A1 WO2009130743A1 PCT/JP2008/001100 JP2008001100W WO2009130743A1 WO 2009130743 A1 WO2009130743 A1 WO 2009130743A1 JP 2008001100 W JP2008001100 W JP 2008001100W WO 2009130743 A1 WO2009130743 A1 WO 2009130743A1
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- package
- lead
- optical device
- leads
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- 230000003287 optical effect Effects 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
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- 229910052802 copper Inorganic materials 0.000 claims description 10
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Definitions
- the present invention relates to an optical device package including a base on which an optical device such as an LED is mounted, and a lead for electrically connecting the optical device to the outside.
- an optical element for packaging an optical element such as a light emitting diode (LED)
- LED light emitting diode
- one having a base for mounting the optical element and provided with a lead for electrically connecting the optical element to an external circuit is known. It is done. Then, the optical device is mounted on the package for the optical device, the optical device and the conductive member are wire-bonded, and the semiconductor light emitting device is formed by sealing with a transparent resin.
- FIG. 8 is a view showing a semiconductor light emitting device disclosed in Patent Document 1.
- This semiconductor light emitting device includes, as a base, a first ceramic substrate 101 and a second ceramic substrate 102 in which a central portion is hollowed out to form a cavity.
- a region on which the LED element 105 is mounted is provided on the upper surface of the first ceramic substrate 101, and a metal reflection plate 106 is provided on the inner surface of the cavity of the second ceramic substrate 102 so as to surround the LED element 105.
- a conductive pattern 103 for electrically connecting the LED element 105 and an external circuit is formed on the surface of the first ceramic substrate 101, and the conductive pattern 103 and the LED element 105 are connected by a wire 104.
- the inside of the cavity is filled with a sealing resin 108 such as silicon resin and sealed.
- Such a semiconductor light emitting device is mounted on a mounting substrate or the like provided with an external circuit and used for a lighting device or the like.
- Such a semiconductor light emitting device has a problem of heat dissipation, a problem of solder crack generation, and a problem of assembly accuracy.
- the metal reflective plate 106 when looking at the heat radiation path from the LED element 105 to the outer peripheral portion, although the metal reflective plate 106 has high thermal conductivity, the ceramic substrates 101 and 102 or the sealing resin 108 intervenes. It is hard to be dissipated.
- the external electrode is formed on the surface of the first ceramic substrate 101 and protrudes from the bottom 107 of the first ceramic substrate 101, When mounted on the mounting substrate, a gap is generated between the bottom surface 107 immediately below the LED element 105 and the mounting substrate, which also causes the low heat dissipation efficiency.
- the conductive pattern 103 and the mounting substrate are soldered to each other. Stress is applied to the solder joint due to the thermal expansion difference between the substrate 101 and the mounting substrate.
- the first ceramic substrate 101 and the conductive pattern 103 have an integral structure as described above, a crack is easily generated in the solder joint portion.
- the metal reflection plate 106 bonded thereto is likely to be deformed.
- the clearance is increased, voids are easily generated at the bonding interface between the ceramic substrate 102 and the metal reflection plate 106, which leads to a decrease in heat dissipation.
- An object of the present invention is to improve heat dissipation, prevent solder cracks, and improve assembly accuracy in a semiconductor light emitting device.
- the present invention provides an optical device package used to package an optical device, the base having a through hole and a mounting portion for mounting the optical device on the upper surface side. And a lead which is inserted into the through hole, one end of which is adjacent to the mounting portion and the other end of which extends outwardly from the bottom of the base, and seals the through hole and electrically insulates the lead from the base An insulating material to be fixed is provided, and the outwardly extending portion of the lead is bent in the outer peripheral direction of the base with respect to the portion passing through the through hole, along the bottom surface of the base.
- the base is formed of a material containing metal, in particular oxygen free copper, copper alloy.
- a convex portion is formed on the back surface of the mounting portion, and the top surface of the convex portion and the surface of the portion along the bottom surface of the lead are present on the same surface.
- the position of the lead passing through the through hole is offset to the outer periphery of the base with respect to the center of the through hole, and the end near the mounting portion is bent toward the center of the base.
- a recess is formed in the central portion of the upper surface of the base, and the outer peripheral portion is formed higher than the optical device mounting portion.
- the inner surface of the recess of the base is plated with silver or an alloy containing silver.
- the insulating material is made of white highly reflective glass.
- the outwardly extending portion of the lead is extended to the outside of the extension of the base, and the end of the lead is bent upward.
- the width of the bent end portion is made narrower than the width of the portion along the bottom of the base.
- An insulating material is also interposed between a portion along the bottom surface of the lead base and the bottom surface of the base.
- soda glass or borosilicate glass is used as the insulating material.
- the lead is composed of an iron-nickel alloy system.
- the mounting portion may be integrally formed on the base, but the auxiliary base portion fixed in an insulated state to the base is provided to mount the mounting portion as the auxiliary base portion. You may form in an upper surface.
- auxiliary base portions may be provided for the base, and a mounting portion may be provided for each of the auxiliary base portions.
- An optical device can be mounted on the package for electronic components of the present invention, and the optical device and the lead can be wire-bonded to configure a semiconductor light emitting device.
- a lighting device can be configured by mounting the semiconductor light emitting device on a substrate provided with a wiring connected to a driving circuit.
- the lead since the lead is fixed in a state of being electrically insulated from the base by the insulating material, the base and the lead are insulated even if the base is formed of a conductive material. Is secured. Therefore, by forming the base using a metal material with good thermal conductivity, the heat generated from the optical element is well transferred to the outside through the base, so that good heat dissipation can be obtained.
- the outwardly extending portion of the lead is bent in the outer peripheral direction of the base with respect to the portion passing through the through hole and along the bottom of the base, the optical semiconductor using the package for the optical device of the present invention
- the lead is not directly bonded to the surface of the base but is fixed via an insulating material, and the portion of the lead extending outward is the base relative to the portion passing through the through hole.
- the leads can be deformed to some extent because they are bent in the circumferential direction and along the bottom of the base.
- the lead deforms and absorbs this force, so the stress applied to the solder joint is small. Therefore, also in the heat cycle test after substrate mounting, the crack hardly occurs in the solder joint portion between the lead and the wiring of the mounting substrate.
- the mounting substrate is formed of a metal such as copper or aluminum
- the base is formed of a metal material, so the thermal expansion difference itself is reduced, so the effect of suppressing the occurrence of solder cracks is large.
- the base and the lead can be processed respectively, the lead can be set in the through hole, and the insulating material can be filled in the through hole. Therefore, the base and the lead can also be manufactured with high precision using pressing.
- the base when the base is formed of a metal-containing material, in particular, oxygen-free copper or a copper alloy, excellent heat conductivity can be obtained because the thermal conductivity is good.
- a convex portion is formed on the back surface side with respect to the mounting portion, and the top surface of the convex portion and the surface of a portion along the bottom surface of the lead are present on the same surface.
- the top surface of the convex portion comes in contact with the mounting substrate, so that the heat dissipation to the mounting substrate becomes better.
- the lead and the base can be bent even when the end near the lead mounting portion is bent to the center It is possible to secure an area that maintains insulation from the That is, when the end of the lead is bent to the center side of the base in this manner, the pad area becomes wide, and it is easy to wire bond to the end of the lead.
- the inner surface of the recess can function as a reflector.
- the reflectance of the reflector for blue light is improved.
- the width of the bent end portion is made narrower than the width of the portion along the bottom of the base, a corner is formed at the end of the lead along the bottom of the base.
- This corner portion can be easily pressed with a jig at the time of package assembly, which contributes to the improvement of package assembly accuracy.
- the insulating material is also interposed between the lead portion along the bottom of the base and the bottom of the base, insulation between the both can be secured.
- the lead is stably fixed since it is effective for bonding of a wide clearance in general because the glass material has high viscosity compared to the resin.
- FIG. 2 is a cross-sectional view taken along line XX in FIG. It is a figure which shows a semiconductor light emitting device which mounted the optical element in the said package for optical elements, and a mode that this is mounted in a mounting substrate.
- FIG. 7 is a process flow diagram showing a method of manufacturing an optical device package and a semiconductor light emitting device. It is a figure which shows the metal plate material before bending-processing a lead. It is a figure which shows a glass sealing process. It is a figure which shows the process of producing a semiconductor light-emitting device. It is a figure which shows the semiconductor light-emitting device concerning a prior art.
- FIG. 1 shows the package 1 for an optical device according to the embodiment, and (a) is a top view and (b) is a bottom view.
- FIG. 2 is a cross-sectional view taken along line XX in FIG.
- the configuration of the optical device package 1 will be described with reference to FIGS.
- the direction along the paper surface of FIG. 1 is referred to as the horizontal direction, and the direction perpendicular thereto is referred to as the vertical direction.
- the optical device package 1 is used to package an optical device, and
- the base 10 having the pair of through holes 11 and 12 formed therein, the leads 21 and 22 inserted in the through holes 11 and 12, and the through holes 11 and 12 are filled, and the leads 21 and 22 are insulated from the base 10 And insulating materials 31 and 32 fixed in a fixed state.
- the base 10 as shown in FIGS. 1 (a) and 1 (b), has a substantially square shape when viewed in a plan view from the vertical direction, and a mounting portion for mounting the optical element in the central portion on the upper surface side. 13 are provided.
- the pair of through holes 11 and 12 are located on both sides of the mounting portion 13 and vertically opened so as to penetrate between the top surface and the bottom surface of the base 10.
- the recessed part 14 is formed in the upper surface of the base 10, and the said mounting part 13 is formed in the bottom of the said recessed part.
- the outer peripheral portion 15 of the base 10 is higher than the mounting portion 13.
- the recess 14 is in the shape of a bowl as shown in FIG. 2 and is circular when viewed from the top as shown in FIG. 1 (a).
- Such a base 10 is preferably integrally molded entirely with a metal material such as copper.
- a plated layer (not shown) is coated on the inner surface of the recess 14.
- the plating layer is formed by laminating a layer of a material selected from gold, silver, a gold alloy, and a silver alloy on the nickel layer, and reflects light emitted from the optical element mounted on the mounting portion 13 It is supposed to
- a convex portion 16 is formed on the bottom surface directly below the mounting portion 13.
- the height of the convex portion 16 is set so that the top surface 16 a of the convex portion 16 and the lower surfaces of the leads 21 c and 22 c exist on the same plane.
- the leads 21 and 22 are obtained by bending a long metal plate material.
- a metal plate for example, a plate made of an iron-nickel alloy is used.
- the leads 21 and 22 have through portions 21 b and 22 b inserted so as to penetrate the through holes 11 and 12 of the base 10, and the through portions 21 b and 22 b are insulating members 31 filled in the through holes 11 and 12. , 32 and fixed.
- the horizontal positions where the through portions 21 b and 22 b of the lead penetrate the inside of the through holes 11 and 12 are offset to the outer peripheral side of the base 10 with respect to the centers of the through holes 11 and 12.
- the center of the through hole 12 is indicated by an alternate long and short dash line A
- the position of the through portion 22 b is indicated by an alternate long and short dash line B
- the position of the through portion 22 b is offset on the outer peripheral side of the base 10 (right side in FIG. 2).
- the end portions 21a and 22a on the side adjacent to the mounting portion 13 are bent toward the inside of the base 10 with respect to the through portions 21b and 22b. That is, the penetrating portions 21b and 22b extend in the vertical direction, and the lead end portions 21a and 22a extend in the horizontal direction to form a pad area.
- the tip ends of the lead end portions 21a and 22a can be set even if the horizontal lengths of the lead end portions 21a and 22a are set large accordingly. Since it does not contact the base 10, the insulation between the leads 21 and 22 and the base 10 can be secured. As described above, by securing the horizontal lengths of the lead end portions 21a and 22a, the pad area becomes wide, and the wire bonding process becomes easy.
- the positions of the penetrating portions 21b and 22b are offset to the outer peripheral side, the distance between the convex portion 16 and the leads 21 and 22 can be increased, thereby preventing shorting of both when mounted on the mounting substrate 3 Play an effect.
- the extending portions 21c and 22c extending outward from the through holes 11 and 12 are bent in the outer peripheral direction of the base 10 with respect to the through portions 21b and 22b, and extend along the bottom surface of the base 10. .
- extension portions 21c and 22c extend to the outside of the outer extension of the base 10, and the end portions 21d and 22d thereof are bent to the upper surface side in the vertical direction.
- the width (W2 in FIG. 1) of the end portions 21d and 22d is set narrower than the width (W1 in FIG. 1) of the extended portions 21c and 22c along the bottom surface of the base (see FIG. 5) ).
- Openings 21 e and 22 e are opened in the regions of the leads 21 and 22 in contact with the insulating materials 31 and 32.
- the insulating materials 31 and 32 are filled in the through holes 11 and 12 to cover the through portions 21 b and 22 b of the leads 21 and 22.
- the insulating materials 31 and 32 are also filled in the openings 21 e and 22 e and also in contact with the lower surfaces of the end portions 21 a and 22 a of the leads 21 and 22.
- the leads 21 and 22 are firmly fixed to the base 10 in an insulating state by the insulating materials 31 and 32, and the through holes 11 and 12 are sealed.
- insulating materials 31 and 32 are also interposed between the extended portions 21 c and 22 c of the leads 21 and 22 and the bottom surface of the base 10 to ensure insulation between the two.
- the insulating materials 31 and 32 those which can fix the leads 21 and 22 in the through holes 11 and 12 of the base 10 are used. Specifically, although a resin can be used, soda glass or borosilicate glass is preferable.
- a glass material has a high viscosity even during melting as compared to a resin, so it is also effective for bonding with a wide clearance. Therefore, if a glass material is used as the insulating materials 31 and 32, the leads 21 and 22 can be stably joined by keeping the glass material in the through holes 11 and 12 even when it is melted.
- white high reflection glass as the insulating materials 31 and 32 in order to increase the reflectance of the inner surface of the recess 14.
- FIG. 3 is a view showing a semiconductor light emitting device 2 in which an optical element is mounted on the above-described optical element package 1 and a state in which the semiconductor light emitting device 2 is mounted on a mounting substrate 3.
- a light emitting diode (LED) is used here as the light element, but a laser diode or the like may be used.
- the LED chip 50 is mounted on the mounting portion 13 of the optical device package 1, and the terminals of the LED chip 50 and the lead end portions 21 a and 22 a are wire 51 , 52 connected.
- the recess 14 is filled with a transparent resin to seal the LED chip 50.
- the semiconductor light emitting device 2 is mounted on the mounting substrate 3, soldered to the extended portions 21c and 22c of the leads 21 and 22, and used as a lighting device.
- a wiring pattern (not shown) is formed of a metal such as copper on the surface of the mounting substrate 3 and an insulating film 60 is provided to avoid unnecessary electrical contact with the semiconductor light emitting device 2. There is.
- FIG. 4 is a process flow diagram showing a manufacturing method of the optical device package 1 and the semiconductor light emitting device 2.
- the glass column, the base 10, and the leads 21 and 22 used in the glass sealing step are manufactured.
- the base 10 is manufactured by press-forming a material made of oxygen free copper or copper alloy with a press machine (P1).
- the leads 21 and 22 are manufactured by bending a plate made of an iron-nickel alloy (P2). If necessary, oxidation treatment is performed by heating to 650 ° C. in air.
- P2 iron-nickel alloy
- FIG. 5 shows the metal plate before the lead 21 is bent.
- the metal plate material is bent at broken lines Y1, Y2 and Y3 in the drawing to fabricate a lead 21.
- the width W2 of the end portion 21d is set narrower than the width W1 of the stretched portion 21c, so a corner (a portion shown by C in FIG. 4) is formed at the end of the stretched portion 21c. Be done.
- a glass cylindrical body is produced by press-molding the glass powder into a columnar shape and pre-sintering (P3).
- FIG. 6 is a view showing a glass sealing step. This will be described with reference to FIG.
- the base 10 is mounted on a carbon jig 71 (FIG. 6A), and the leads 21 and 22 are set so as to penetrate the through holes 11 and 12 of the base 10 and fixed by the carbon jig 72 (FIG. 6) (B).
- the glass column body 73 is inserted into the through holes 11 and 12 (FIG. 6C), and heated and cooled to a temperature (e.g., 1000 ° C.) at which the glass melts.
- a temperature e.g. 1000 ° C.
- the corners are formed at the ends of the extended portions 21c and 22c in the leads 21 and 22 as described above, in the process of FIG.
- the corners can be held down by the tool 72 to hold the leads 21 and 22.
- the carbon jig 72 can be slid horizontally from the terminal end side of the lead to move the corner portion to the pressing position, the package can be easily assembled.
- the heated glass is melted and a part thereof is filled in the entire through holes 11 and 12 through the openings 21 e and 22 e of the leads 21 and 22. Further, part of the melted glass also flows between the elongated portions 21 c and 22 c of the leads 21 and 22 and the bottom surface of the base 10. Then, when the glass is cooled, it solidifies into the insulating materials 31 and 32, and the leads 21 and 22 are firmly fixed to the base 10 by the insulating materials 31 and 32.
- a plating process is applied to the assembly as described above (P5 in FIG. 4).
- a base layer by nickel plating and then to perform plating with a material selected from gold, silver and gold-silver alloys.
- a nickel underlayer and a plated layer of gold, silver or a gold-silver alloy are formed on the entire exposed surface of the base 10, the leads 21 and 22 and the like.
- the optical device package 1 is manufactured.
- the semiconductor light emitting device 2 is manufactured through the die bonding step (P6 in FIG. 4), the wire bonding step (P7 in FIG. 4), and the capping step (P8 in FIG. 4) using the package 1 for an optical element.
- FIG. 7 (a) shows the case of the lens with reflector shown in FIG. 3 and without the lens
- FIG. 7 (b) shows the case without a reflector and with the lens as a modification.
- a paste of Au—Sn alloy or Ag is applied on the mounting portion 13 of the optical device package 1, and the LED chip 50 is mounted and bonded by heating.
- the heating temperature is 320 ° C. for the Au—Sn alloy and 150 ° C. for Ag.
- the terminals of the mounted LED chip 50 and the lead end portions 21a and 22a are connected by wires (Au wires) 51 and 52.
- wires Au wires
- the lead end portions 21a and 22a extend in the horizontal direction as described above, connection between the lead end portions 21a and 22a and the wires 51 and 52 can be easily performed.
- the sealing transparent resin (epoxy resin or silicon resin) is poured into the recess 14 and cured to seal the LED chip 50.
- the outer peripheral portion 15 of the base 10 is not formed higher than the central portion, and therefore the reflector is not formed. Instead, after the wire bonding process, a lens capping process of mounting the lens 80 so as to cover the LED chip 50 is added. Then, in the encapsulation step, the sealing transparent resin is poured between the lens 80 and the base 10 and cured to seal the LED chip 50.
- the outer peripheral portion 15 of the base 10 is formed higher than the central portion to form a reflector, and the lens capping step and the encap step are
- the lens 80 may be mounted as shown in FIG. 7 (b).
- the semiconductor light emitting device 2 manufactured as described above is mounted on the mounting substrate 3.
- the wiring pattern (not shown) is formed on the surface portion of the mounting substrate 3 and the insulating film 60 is provided. Further, cream solder 61 is applied on the wiring pattern at the position on the mounting substrate 3 where the leads 21 and 22 are placed.
- the semiconductor light emitting device 2 is placed on the mounting substrate 3 and heated in a reflow furnace to melt the cream solder 61 and solder the drawn portions 21 c and 22 c of the leads 21 and 22 onto the mounting substrate 3. Ru. At this time, the molten solder flows so as to wet the surfaces of the end portions 21d and 22d, and a rounded fillet is formed on the solder joint 62, and the strength of the solder joint 62 is enhanced. Moreover, the state of soldering can also be confirmed by observing this fillet shape.
- the optical device package 1 according to the present embodiment is fixed in a state in which the leads 21 and 22 are insulated from the base 10 by the insulating materials 31 and 32, respectively.
- the base 10 and the leads 21 and 22 are formed of a metal material having good thermal conductivity, and the leads 21 and 22 are set in the through holes of the base 10 and the glass material is filled in the through holes. can do.
- the base 10 and the leads 21 and 22 can be manufactured with high accuracy by press processing.
- the extending portions 21c and 22c extending outward of the leads 21 and 22 are bent in the outer peripheral direction of the base 10 with respect to the through portions 21b and 22b and made parallel along the bottom surface of the base 10, As shown in FIG. 3, when the extending portions 21 c and 22 c are soldered to the mounting substrate 3 at the time of mounting, the top surface 16 a immediately below the mounting portion 13 approaches or contacts the mounting substrate 3. Accordingly, the heat generated in the LED chip 50 is transmitted from the mounting portion 13 of the base 10 directly below to the heat of the mounting substrate 3 efficiently.
- the base 10 is formed of a copper material (oxygen-free copper or copper alloy), the heat conductivity is excellent, so that excellent heat dissipation can be obtained.
- a convex portion 16 is formed on the back side with respect to the mounting portion 13, and the top surface of the convex portion 16 and the surfaces of the extension portions 21c and 22c exist on the same plane. Therefore, when mounted on the mounting substrate 3, the top surface 16 a of the convex portion 16 contacts the mounting substrate 3, so the heat dissipation to the mounting substrate 3 becomes better.
- the leads 21 and 22 are not directly bonded to the base 10 but fixed to the base 10 via the insulating materials 31 and 32, and the lead extending portions 21c and 22c are the outer periphery of the base. Because they are bent in a direction and spaced apart and parallel along the bottom of the base 10, the leads 21, 22 can be deformed to some extent.
- the leads 21 and 22 deform and absorb the force.
- the stress applied to the Therefore, even in the heat cycle test, the solder joint portion 62 is unlikely to be cracked.
- both of the base 10 and the mounting substrate 3 are formed of metal, and the difference in thermal expansion between the two is also small, which has the effect of suppressing the occurrence of solder cracks.
- the base 10 and the leads 21 and 22 are respectively formed by press working, the leads 21 and 22 are set in the through holes 11 and 12, and the glass material is filled in the through holes.
- the optical device package 1 can be manufactured, so that the base 10 and the leads 21 and 22 can be manufactured with high accuracy.
- the position where the through holes 11 and 12 of the leads 21 and 22 pass through is offset to the outer peripheral side of the base 10 with respect to the center of the through holes 11 and 12, and the lead end portions 21a and 22a are the base 10 It is easy to connect the wires 51 and 52 to the lead end portions 21a and 22a, because
- the recess 14 is formed in the central portion of the upper surface of the base 10, and the outer peripheral portion 15 is formed higher than the mounting portion 13. Therefore, the inner surface of the recess 14 can function as a reflector. By plating with an alloy containing, the reflectance of the reflector to blue light is improved.
- the reflectance of the reflector can be increased.
- Glass materials are generally effective for bonding with a wide clearance because they have high viscosity. Therefore, if soda glass or borosilicate glass is used as the insulating materials 31 and 32, the leads 21 and 22 can be stably fixed.
- FIG. 9 is a view showing an optical device package according to an embodiment similar to the above-described optical device package 1, and FIGS. 10 to 13 are views showing an optical device package according to an embodiment in which the optical device package 1 is modified.
- (a) is a plan view
- (b) is a right side view
- (c) is a bottom view
- (d) is a front view
- (e) is a cross-sectional view.
- the left side view is symmetrical with the right side view, and the rear view is omitted since it is symmetrical with the front view.
- the optical device package shown in FIG. 10 is the same as that shown in FIG. 9, but a recess (reflector) is not formed on the upper surface of the base 10.
- a plurality of mounting portions are arranged on the upper surface of the base 10, and a plurality of LED chips can be mounted.
- each mounting portion 13a to 13h is arranged in four rows and two columns, and a pair of leads 21 and 22 are provided to penetrate through the pair of through holes 11 and 12 There is. Also in this optical device package, the recess (reflector) is not formed on the upper surface of the base 10.
- LED chips of the same emission color may be mounted, but LED chips of different emission colors may be mixed and mounted.
- white light can be emitted as a whole by mixing LED chips of each color of RGB.
- the mounting portion 13 is integrally formed on the upper surface side of the base 10, but the second base separate from the base 10 is fixed to the base 10 in the insulated state Then, the mounting portion may be formed on the upper surface of the second base.
- the number of second bases on which the mounting portion is formed is not limited to one, and a plurality of second bases may be provided.
- a plurality of second through holes are formed in the central portion of the base 10, and the second base is formed of a metal material in a shape that can penetrate the inside of each second through hole, and the upper surface of each second base Form the mounting part on the side. Then, each second base is fixed to each second through hole via an insulating material such as a glass material.
- the plurality of mounted optical elements can be operated without electrically shorting them in common.
- the number of leads may be one, so the number of through holes provided in the base is also One is good.
- the present invention can be applied to an optical device package for packaging an optical device such as a light emitting diode (LED), and the optical semiconductor device can be formed to be used for a lighting apparatus or the like.
- an optical device such as a light emitting diode (LED)
- the optical semiconductor device can be formed to be used for a lighting apparatus or the like.
- the heat dissipation is good, it is suitable for a high power optical semiconductor device.
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Abstract
Description
2 半導体発光装置
3 実装基板
10 ベース
11,12 貫通孔
13 搭載部
14 凹部
15 外周部
16 凸部
16a 凸部頂面
21,22 リード
21a,22a リード端部
21b,22b 貫通部分
21c,22c 延伸部分
21d,22d 終端部
31,32 絶縁材
50 LEDチップ
51,52 ワイヤ
62 ハンダ接合部
73 ガラス柱体
図1は、実施の形態に係る光素子用パッケージ1を示すものであって、(a)は上面図(b)は底面図である。図2は、図1におけるX-X線断面図である。
一対の貫通孔11,12が形成されているベース10と、貫通孔11,12に挿入されたリード21,22と、貫通孔11,12に充填されて、リード21,22をベース10から絶縁した状態で固定する絶縁材31,32とを備えている。
ベース10は、図1(a),(b)に示すように、垂直方向から平面視したときに略正方形状であって、その上面側の中央部に、光素子を搭載するための搭載部13が設けられている。
リード21,22は、長尺状の金属板材が折り曲げ加工されたものである。金属板としては、例えば、鉄-ニッケル系合金からなる板材が用いられる。
絶縁材31,32は、貫通孔11,12内に充填されて、リード21,22の貫通部分21b,22bを覆っている。
図3は、上記光素子用パッケージ1に光素子を搭載した半導体発光装置2、並びにこれを実装基板3に実装する様子を示す図である。
図4は、光素子用パッケージ1及び半導体発光装置2の製造方法を示す工程フロー図である。
図6はガラス封着工程を示す図である。当該図6を参照しながら説明する。
上記光素子用パッケージ1を用いて、ダイスボンディング工程(図4のP6),ワイヤボンディング工程(図4のP7),エンキャップ工程(図4のP8)を通して半導体発光装置2を作製する。
以上のように、本実施形態にかかる光素子用パッケージ1は、リード21,22が絶縁材31,32によってベース10に対して絶縁した状態で固定されているので、ベース10及びリード21,22を熱伝導性の良好な金属材料で成形しておいて、リード21,22を、ベース10の貫通孔内にセットし、ガラス材を貫通孔に充填する方法で作製することができる。
図9は、上記光素子パッケージ1と同様の実施例にかかる光素子パッケージを示す図面、図10~13は、上記光素子パッケージ1を変形した実施例にかかる光素子パッケージを示す図面であって、各図において、(a)は平面図、(b)は右側面図、(c)は底面図、(d)は正面図、(e)は断面図である。なお、左側面図は右側面図と対称、背面図は正面図と対称なので省略している。
なお、この光素子パッケージも、ベース10の上面に凹部(リフレクタ)は形成されていない。
Claims (17)
- 光素子をパッケージするために用いられる光素子用パッケージであって、
貫通孔が形成されていると共に光素子を搭載するための搭載部を上面側に備えたベースと、
前記貫通孔に挿入されたリードと、
前記貫通孔に充填され、前記リードを前記ベースから絶縁した状態で固定する絶縁材とを備え、
前記リードは、その一端側が前記貫通孔から外方に延伸し、
前記貫通孔を貫通する部分に対して、前記ベースの外周方向に折り曲げられ、前記ベースの底面に沿って延在していることを特徴とする光素子用パッケージ。 - 前記ベースは、金属を含む材料で形成されていることを特徴とする請求項1記載の光素子用パッケージ。
- 前記ベースは、無酸素銅又は銅合金で形成されていることを特徴とする請求項2記載の光素子用パッケージ。
- 前記ベースは、前記搭載部に対して背面側に凸部を有し、
当該凸部の頂面と、前記リードの底面に沿って部分の表面とが、同一面上に存在することを特徴とする請求項1記載の光素子用パッケージ。 - 前記リードは、
前記貫通孔内を貫通する位置が、前記貫通孔の中央に対してベースの外周側にオフセットされており、
前記搭載部に近い端部が、前記ベースの中央側に折り曲げられていることを特徴とする請求項1記載の光素子用パッケージ。 - 前記ベースは、
上面の中央部に凹部が形成されて、前記光素子搭載部よりも外周部が高くなっていることを特徴とする請求項1記載の光素子用パッケージ。 - 前記ベースの凹部内面は、
銀または銀を含む合金でメッキされていることを特徴とする請求項4記載の光素子用パッケージ。 - 前記絶縁材は、白色の高反射ガラスで構成されていることを特徴とする請求項1記載の電子部品用パッケージ。
- 前記リードの外方に延伸する部分は、前記ベースの外延よりも外側まで延在し、その終端部が上面側に折り曲げられていることを特徴とする請求項1記載の光素子用パッケージ。
- 前記リードにおいて、
折り曲げ形成されている終端部分の幅は、前記ベースの底面に沿っている部分の幅よりも狭いことを特徴とする請求項9記載の光素子用パッケージ。 - 前記絶縁材が、
前記ベースの底面に沿っている部分と、前記ベースの底面との間にも介在することを特徴とする請求項1記載の光素子用パッケージ。 - 前記絶縁材は、ソーダ系ガラスもしくは硼珪酸系ガラスからなることを特徴とする請求項1記載の光素子用パッケージ。
- 前記リードは、鉄-ニッケル合金系で構成されていることを特徴とする請求項1記載の光素子用パッケージ。
- 前記ベースに対して絶縁した状態で固着された補助ベース部を備え、
前記搭載部は、当該補助ベース部の上面に形成されていることを特徴とする請求項1記載の光素子用パッケージ。 - 前記補助ベース部は、当該ベースの本体部に対して複数個設けられ、
前記搭載部は、各補助ベース部ごとに設けられていることを特徴とする請求項14記載の光素子用パッケージ。 - 請求項1に記載の電子部品用パッケージに、
光素子が搭載され、当該光素子とリードとがワイヤボンドされてなる半導体発光装置。 - 請求項16記載の半導体発光装置が、
駆動回路に接続された配線を備えた基板に実装されてなる照明装置。
Priority Applications (4)
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PCT/JP2008/001100 WO2009130743A1 (ja) | 2008-04-25 | 2008-04-25 | 光素子用パッケージ、半導体発光装置および照明装置 |
JP2010508978A JPWO2009130743A1 (ja) | 2008-04-25 | 2008-04-25 | 光素子用パッケージ、半導体発光装置および照明装置 |
US12/866,635 US20110024313A1 (en) | 2008-04-25 | 2008-04-25 | Optical element package, semiconductor light-emitting device, and lighting device |
CN2008801288343A CN102017194A (zh) | 2008-04-25 | 2008-04-25 | 光学元件封装体、半导体发光装置和照明装置 |
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PCT/JP2008/001100 WO2009130743A1 (ja) | 2008-04-25 | 2008-04-25 | 光素子用パッケージ、半導体発光装置および照明装置 |
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WO2011129664A3 (ko) * | 2010-04-15 | 2012-03-15 | 오름반도체(주) | 발광 다이오드 패키지 및 그 제조방법 |
WO2012002629A1 (ko) * | 2010-07-02 | 2012-01-05 | 연세대학교 산학협력단 | 발광다이오드 모듈 |
KR101130137B1 (ko) | 2010-07-02 | 2012-03-28 | 연세대학교 산학협력단 | 발광다이오드 모듈 |
CN102884618A (zh) * | 2010-09-28 | 2013-01-16 | 京瓷株式会社 | 元件收纳用容器及使用其的电子装置 |
US9237662B2 (en) | 2010-09-28 | 2016-01-12 | Kyocera Corporation | Device housing package and electronic apparatus employing the same |
CN103430336A (zh) * | 2011-03-07 | 2013-12-04 | 肖特公开股份有限公司 | 用于大功率发光二极管的壳体 |
JP2014508419A (ja) * | 2011-03-07 | 2014-04-03 | ショット アクチエンゲゼルシャフト | 高出力発光ダイオード用のハウジング |
CN103430336B (zh) * | 2011-03-07 | 2017-02-15 | 肖特公开股份有限公司 | 用于大功率发光二极管的壳体 |
US11506361B2 (en) | 2020-08-21 | 2022-11-22 | Nichia Corporation | Light emitting device and light source device |
Also Published As
Publication number | Publication date |
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CN102017194A (zh) | 2011-04-13 |
JPWO2009130743A1 (ja) | 2011-08-04 |
US20110024313A1 (en) | 2011-02-03 |
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