WO2004106234A1 - Procede de production d'un nanotube de carbone monocouche de diametre uniforme - Google Patents

Procede de production d'un nanotube de carbone monocouche de diametre uniforme Download PDF

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Publication number
WO2004106234A1
WO2004106234A1 PCT/JP2004/001348 JP2004001348W WO2004106234A1 WO 2004106234 A1 WO2004106234 A1 WO 2004106234A1 JP 2004001348 W JP2004001348 W JP 2004001348W WO 2004106234 A1 WO2004106234 A1 WO 2004106234A1
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WIPO (PCT)
Prior art keywords
fullerene
carbon nanotubes
walled carbon
producing
producing single
Prior art date
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PCT/JP2004/001348
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English (en)
Japanese (ja)
Inventor
Shigeo Maruyama
Yuhei Miyauchi
Original Assignee
Bussan Nanotech Research Institute Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Bussan Nanotech Research Institute Inc. filed Critical Bussan Nanotech Research Institute Inc.
Priority to JP2005506448A priority Critical patent/JP4642658B2/ja
Priority to US10/543,509 priority patent/US20060093545A1/en
Publication of WO2004106234A1 publication Critical patent/WO2004106234A1/fr

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/16Preparation
    • C01B32/162Preparation characterised by catalysts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/02Single-walled nanotubes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/20Nanotubes characterized by their properties
    • C01B2202/36Diameter

Definitions

  • the present invention relates to a method for producing single-walled carbon nanotubes (hereinafter referred to as SWNTs) by sublimating fullerenes.
  • the present invention relates to a method for manufacturing a SWNT in which the diameter of the SWNT is controlled by a len. book
  • Carbon nanotubes are carbon clusters whose cross-sectional diameter is 100 nm or less, with a tubular graph ensheet.
  • CNTs Carbon nanotubes
  • SWNTs exhibit various properties between semiconductors and metals due to their chirality. Therefore, control the chirality at the time of production or use chirality in the separation and purification process. If this can be controlled, it is expected that industrial utility will be very high.
  • SWNT has a tubular structure of graph ensheet, so if the diameter of SWNT can be strictly controlled, it is close to controlling chirality without directly controlling chirality. On the other hand, by narrowing the range of the diameter of the SWNT, the width of the chirality that can be substantially taken is narrowed.
  • SWNT small size nanoparticles
  • CVD chemical vapor deposition
  • CCVD catalytic chemical vapor deposition
  • SWNT diameter control To control the diameter distribution by adjusting the manufacturing conditions, such as changing the inert gas type and pressure, or by heat-treating the SWNT mixture to extract only SWNTs near a specific diameter.
  • Japanese Patent Application Laid-Open No. 2000-203819 discloses a method for producing a mixture of linear single-walled or multi-walled carbon nanotubes in a plasma of a carbon material containing one C ⁇ C one or one. ing. It is stated that this method can control the length of CNT.
  • Japanese Patent Application Laid-Open No. 2001-058805 discloses that a mixture of the same or different fullerene molecules and a transition metal element or an alloy thereof are mixed to form CNT at 500 ° C. or more under reduced pressure under an inert gas atmosphere.
  • the theme is to produce easily and in high yield by the method.
  • Japanese Patent Application Laid-Open No. 2001-089117 discloses that when a CNT is produced by a laser ablation method, a laser-irradiated target includes a five-membered ring bond of carbon such as fullerene and a catalyst is mixed with the target. There is no description about controlling the SWNT diameter because it generates SWNT at a low temperature.
  • Japanese Patent Application Laid-Open No. 2002-029717 discloses a method for producing a carbon material in which at least one of fullerene or CNT is mixed with amorphous carbon and heat-treated to convert the amorphous carbon into fullerene or CNT. There is a statement that a CNT of a certain length can be obtained, but there is no mention of the diameter.
  • Zhang and Iijima is, C 6.
  • a mixture of 5 at% of Ni and Co in powder is used as a laser irradiation target in the laser-oven method, and when graphite is used, the temperature of the electric furnace (oven) must be set to about 850 ° C to make the SWNT Although it was not possible to produce, it was shown that even though the furnace temperature was 400 ° C, it was trace and amorphous, but could be produced (Y. Zhang, S. Iijima: Appl. Phys. Lett. 75 (1999), 3087). In this case, the fullerene structure at the angle It is believed that the debris has been destroyed and that the debris that has not been completely disintegrated by the laser is responsible for the synthesis of SWNT.
  • any carbon material is considered to be a raw material for SWNT, and as a result, it is difficult to say that SWNT is synthesized from fullerene.
  • the temperature of the oven is set to 400 ° C in order to prevent the sublimation of fullerene.
  • the amount of SWNT is too small to judge how large the diameter is from the Raman spectrum, but it is thought that it is almost the same as when using graphite material.
  • An object of the present invention is to produce a SWNT having a controlled diameter by a CCVD method. Disclosure of the invention
  • the present invention relates to a method for producing SWNTs by a CCVD method, in which fullerenes are used as a raw material, sublimated therefrom, and brought into contact with a heated catalyst to synthesize SWNTs. This is a method of manufacturing SWNT that controls the diameter of SWNT.
  • one or more fullerenes C 2n (n is an integer of n ⁇ 18, for example, C 60 , C 70 , C 76 , C ( Table 82, etc.)
  • n-> 02plJss9 JodB.
  • the vapor pressure of fullerene C 60 can be calculated by the following equation.
  • Table 2 shows the results of calculating the vapor pressure of fullerene C 6 Q using the above formula.
  • the sublimated fullerene gas is sent downstream of the reactor using the vapor pressure as a driving force, and is brought into contact with a transition metal catalyst supported on a porous substance or an inorganic oxide thin film heated to a vaporization temperature or higher.
  • SWNT is generated from fullerene by contact with the catalyst. After a predetermined time from the start of the reaction, the reactor is cooled and SWNT is taken out.
  • fullerene is decomposed on the surface of the catalyst particles and precipitates on the surface as transition-state carbon atoms or molecules.
  • the resulting structure has a structure and can be deposited as single-walled carbon nanotubes. This is because the chirality of the deposited carbon nanotube is considered to be determined by the direction and position of the five-membered ring of the fullerene molecule. Therefore, a part of the fullerene molecules cannot be left on the catalyst particle surface in the form as it is.
  • single-walled carbon nanotubes with uniform chirality can be produced.
  • the carbon nanotubes produced by the method of the present invention inherit the regularity of the molecular structure of fullerene, so that the diameter distribution can be narrowed.
  • single-walled carbon nanotubes are generated on a substrate having catalyst particles having a uniform particle diameter. Since the size of the catalyst particles is a factor in determining the diameter of the single-walled carbon nanotubes precipitated from the catalyst particles, the distribution of the diameter of the single-walled carbon nanotubes precipitated from the catalyst particles is further improved by adjusting the size of the catalyst particles. Can be narrow.
  • FIG. 1 is a diagram schematically illustrating a SWNT generation apparatus according to a first embodiment.
  • FIG. 2 is a transmission electron micrograph of SWNT generated in Example 1.
  • FIG. 3 is a Raman spectrum diagram of the SWNT produced in Example 1.
  • FIG. 4 is a diagram schematically illustrating a SWNT generation apparatus according to a second embodiment.
  • FIG. 5 is a Raman spectrum diagram of the SWNT generated in Example 2.
  • FIG. 6 is a diagram schematically illustrating a SWNT generation apparatus according to a third embodiment.
  • FIG. 7 is a diagram illustrating a change in a temperature rise curve and a vapor pressure of fullerene in Example 3.
  • FIG. 8 is a transmission electron micrograph of SWNT produced in Example 3.
  • FIG. 9 is a transmission electron micrograph of the SWNTs produced in Example 3.
  • FIG. 10 is a Raman spectroscopy diagram of SWNT generated in Example 3.
  • FIG. 11 is a Raman spectrum diagram of the SWNTs generated in Example 4.
  • FIG. 12 is a Raman spectrum diagram of the SWNTs generated in Examples 3 and 4 and the SWNT generated in Comparative Example 1.
  • FIG. 1 is a schematic diagram showing one example of a reactor for carrying out the present invention.
  • one or more fullerenes C 2n (where n is an integer of n ⁇ 18) or one or more types of fullerenes C 2n in a reactor in a vacuum state of 0.5 Torr or less, preferably in a vacuum state of 0.05 Torr or less.
  • the chemically modified fullerene is sublimated above the sublimation temperature of the fullerene.
  • the evaporating section of fullerenes is placed in a fusion cell or a small diameter pipe. Due to the large flow resistance between the reaction tube and the outside, the pressure inside the tube is approximately the fullerene vapor pressure at the set temperature.
  • the sublimated fullerene gas is guided using a flow straightening tube and is caused to touch a downstream catalyst.
  • the method of controlling the flow of fullerene gas in Fig. 1 is to place the fullerene to be immersed on the closed side in a quartz tube sealed on one side, turn the open end to the vacuum device side, and convert the heated fullerene to fullerene vapor.
  • the pressure is made to flow as a driving force.
  • Control of the pressure of the fullerene gas is performed at the heating temperature, but control of this temperature is important. If the back pressure of the reactor is 0.05 Torr, the vapor pressure of fullerene must be at least 0.05 Torr similar to the back pressure, and heating at 660 ° C is required. On the other hand, if the back pressure is 0.5 Torr, heating at 760 ° C is necessary to make the vapor pressure 0.5 Torr.
  • the temperature is 700 ° C or more, C 6 . It is thought that the decomposition of the fullerene proceeds, and there is an upper limit to the temperature at which the fullerene is heated.
  • Fullerene transferred from the evaporator collides with the transition metal catalyst and becomes an initial nucleus of the single-walled carbon nanotube while preserving a part of its molecular structure, whereby the single-walled carbon nanotube grows from the metal catalyst. If the initial nucleus is formed, the growth of SWNTs will be relatively fast. For this reason, the rate of temperature rise from the start of fullerene evaporation is important.
  • the catalyst is heated to the high temperature required for nucleation of fullerenes into SWNTs. Preferably it is 750 ° (: to 900 ° C.
  • a porous substance or an oxide of an inorganic substance is applied or produced on a substrate capable of withstanding the operating temperature, and one or more types of metal fine particles are supported on the substrate.
  • the sublimated fullerene is passed over the substrate.
  • the transition metal is preferably any one of Fe, Co, Mo, Ni, Rh, Pd, and Pt, or a mixture thereof. More preferably, they are Fe, Co, and Mo.
  • the porous substance is not particularly limited as long as it can support the above-mentioned metal fine particles and does not change at the reaction temperature in the apparatus, but a metal oxide or other inorganic porous body is preferable.
  • porous bodies such as zeolite, magnesia, alumina, silica and mesoporous silica are more preferable, and Y-type zeolite is particularly preferable.
  • a thin film of an inorganic oxide can also be preferably used, and a silicon oxide film is particularly preferable.
  • a substrate on which these porous materials are placed or a substrate on which an inorganic oxide film is formed Plate) is placed parallel to the flow direction of the fullerene gas flow. Alternatively, a plate processed into a shape along the inner wall of the reaction tube is preferable.
  • the cooling method is to stop heating the reaction tube, cool the reaction tube quickly by blowing air at room temperature from outside with a fan, and take out the plate after reaching room temperature to obtain SWNT on the plate.
  • a fullerene was placed in a quartz tube (reaction tube) with an inner diameter of 4.5 mm and a length of 200 mm sealed in a 26 mm inner diameter quartz tube (reaction tube) placed in a heating furnace. those packed in sealed side C 60 5 0 Omg, placed by Uni fullerene part at the center of the first heating furnace.
  • a quartz plate uniformly coated with Y-type zeolite particles (particle diameter: 0.3 to 1 m) carrying Fe / Co catalyst particles (particle diameter:! Placed in parallel.
  • the inside of the reaction tube was evacuated to a pressure of 0.5 Torr or less using a single-hole pump.
  • the first heating furnace is 20 cm long and the second heating furnace is 30 cm long.
  • the first heating furnace is shifted along the 20 cm quartz tube in the direction opposite to the second heating furnace, and while the fullerene is not heated, the first heating furnace is set to 8 while flowing argon at about 35 OTorr and about 20 Osccm.
  • the temperature of the second heating furnace was raised to 900 ° C. at 50 ° C. After the temperature was raised, the argon was stopped and the pressure was again reduced to 0.5 Torr or less. After that, the first heating furnace is returned to the specified temperature and heating of the fullerene is started. After the operation was continued for 10 minutes under the above conditions, the heating was stopped, and the reactor was cooled by blowing air at room temperature with a fan. After cooling, the quartz plate coated with zeolite was taken out to obtain SWNT.
  • TEM transmission electron microscope
  • Example 2 The estimated diameter is shown from the figure, and it can be seen that it is about 1 Ml.
  • Example 2 The estimated diameter is shown from the figure, and it can be seen that it is about 1 Ml.
  • Figure 4 shows a schematic diagram of the equipment used.
  • Example 2 The operation was performed in the same manner as in Example 1, except that the back pressure was set to 0.05 ⁇ 0 ⁇ and the quartz plate coated with zeolite was formed in a semi-cylindrical shape along the inner wall of the reaction tube.
  • the diameter of the quartz tube enclosing the fullerene was the same as that of Example 1, but the length was set to 100 mm.
  • the temperature of the first heating furnace was set to 680 ° (:, and the temperature of the second heating furnace was set to 825 ° C.
  • Fig. 5 shows the Raman spectrum of the generated SWNT.
  • Figure 6 shows a schematic diagram of the equipment used.
  • thermocouple was attached to a quartz tube in which fullerene was sealed, and the temperature raising condition of fullerene was measured.
  • Figure 7 shows the change in temperature of the quartz tube filled with fullerene and the change in vapor pressure of fullerene from the start of the experiment.
  • FIGS. 8 and 9 show TEM photographs of the generated SWNTs, and FIG. 10 shows a Raman spectroscopy spectrum.
  • Example 4 The same procedure was performed as in Example 3, but using fullerene C 6 as a raw material. Fullerene C 7 Q was used in place of.
  • Fig. 11 shows the Raman spectrum spectrum of the generated SWNT.
  • Figure 12 shows a Raman spectrum diagram of SWNT generated from alcohol by CCVD.
  • the SWNT obtained by the present invention can be widely used for FED displays, fuel cells, electron microscopes, ultra-high strength materials, electrically conductive composite materials, and the like.

Abstract

La présente invention concerne un procédé qui permet de produire des nanotubes de carbone monocouche sur un substrat sur lequel ont été disposées une multiplicité de fines particules composées d'au moins un type de métal catalyseur dans un réacteur maintenu sous vide, lequel procédé consiste à sublimer au moins un type de fullerène C2n (où n est un entier répondant à la relation n ≥ 18) à une température supérieure ou égale à une température donnée de façon à former un gaz fullerène dont la pression partielle est contrôlée, et à transporter ledit gaz fullerène sur le substrat qui a été chauffé jusqu'à une température supérieure ou égale à la température de sublimation du fullerène, de façon que le gaz fullerène est amené en contact avec les fines particules du métal catalyseur afin de produire les nanotubes de carbone monocouche. De préférence, le degré de vide est inférieur ou égal à 0,5 Torr et la température de sublimation est inférieure ou égale à 700 °C ; le substrat est muni d'un mince film d'une substance poreuse ou d'un oxyde inorganique ; et de fines particules d'un catalyseur métal de transition d'un diamètre compris entre 0,5 et 10 nm sont disposées sur le film mince.
PCT/JP2004/001348 2003-02-07 2004-02-09 Procede de production d'un nanotube de carbone monocouche de diametre uniforme WO2004106234A1 (fr)

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US10/543,509 US20060093545A1 (en) 2003-02-07 2004-02-09 Process for producing monolayer carbon nanotube with uniform diameter

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JP2007197306A (ja) * 2006-01-27 2007-08-09 Sony Corp 単層カーボンナノチューブの製造方法、単層カーボンナノチューブおよび電子素子の製造方法
WO2007088829A1 (fr) * 2006-01-31 2007-08-09 Japan Science And Technology Agency Materiau portant un nanohorn de carbone et procede de synthese de nanotube de carbone
JP2007331989A (ja) * 2006-06-16 2007-12-27 Univ Meijo カーボンナノチューブの製造方法
WO2008057620A3 (fr) * 2006-03-29 2008-06-26 Hyperion Catalysis Int Procédé de préparation de nanotubes de carbone à paroi simple à partir d'une couche métallique
WO2008060654A3 (fr) * 2006-03-29 2008-07-10 Hyperion Catalysis Int Procédé de préparation de nanotubes de carbone uniformes à paroi unique
JP2009280450A (ja) * 2008-05-23 2009-12-03 Nagoya Institute Of Technology カーボンナノチューブの製造方法及び製造装置
US7947247B2 (en) 2005-03-29 2011-05-24 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
JP2011173739A (ja) * 2010-02-23 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> カーボンナノチューブの製造方法
JP5150772B2 (ja) * 2010-02-04 2013-02-27 独立行政法人科学技術振興機構 選択的に化学修飾されたカーボンナノチューブの製造方法
US8529862B2 (en) 2005-03-29 2013-09-10 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
JP2018177562A (ja) * 2017-04-06 2018-11-15 アイシン精機株式会社 カーボンナノチューブ複合体の製造方法

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US8591858B2 (en) * 2008-05-01 2013-11-26 Honda Motor Co., Ltd. Effect of hydrocarbon and transport gas feedstock on efficiency and quality of grown single-walled nanotubes
US9440855B2 (en) * 2012-02-13 2016-09-13 Osaka University High purity carbon nanotube, process for preparing the same and transparent conductive film using the same
FR3027155B1 (fr) * 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
KR102109233B1 (ko) 2017-09-18 2020-05-12 주식회사 엘지화학 인장강도가 향상된 탄소나노튜브 섬유 제조 방법

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US7947247B2 (en) 2005-03-29 2011-05-24 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
US8529862B2 (en) 2005-03-29 2013-09-10 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
JP2007197306A (ja) * 2006-01-27 2007-08-09 Sony Corp 単層カーボンナノチューブの製造方法、単層カーボンナノチューブおよび電子素子の製造方法
WO2007088829A1 (fr) * 2006-01-31 2007-08-09 Japan Science And Technology Agency Materiau portant un nanohorn de carbone et procede de synthese de nanotube de carbone
US8835006B2 (en) 2006-01-31 2014-09-16 Nec Corporation Carbon nanohorn carried material and process for producing carbon nanotube
JP5106123B2 (ja) * 2006-01-31 2012-12-26 独立行政法人科学技術振興機構 カーボンナノホーン担持体とカーボンナノチューブの合成方法
US7951351B2 (en) 2006-03-29 2011-05-31 Hyperion Catalysis International, Inc. Method for preparing uniform single walled carbon nanotubes
EP2001795A2 (fr) * 2006-03-29 2008-12-17 Hyperion Catalysis International, Inc. Procédé de préparation de nanotubes de carbone uniformes à paroi unique
EP2001795A4 (fr) * 2006-03-29 2012-06-27 Hyperion Catalysis Int Procédé de préparation de nanotubes de carbone uniformes à paroi unique
WO2008060654A3 (fr) * 2006-03-29 2008-07-10 Hyperion Catalysis Int Procédé de préparation de nanotubes de carbone uniformes à paroi unique
WO2008057620A3 (fr) * 2006-03-29 2008-06-26 Hyperion Catalysis Int Procédé de préparation de nanotubes de carbone à paroi simple à partir d'une couche métallique
JP2007331989A (ja) * 2006-06-16 2007-12-27 Univ Meijo カーボンナノチューブの製造方法
JP2009280450A (ja) * 2008-05-23 2009-12-03 Nagoya Institute Of Technology カーボンナノチューブの製造方法及び製造装置
JP5150772B2 (ja) * 2010-02-04 2013-02-27 独立行政法人科学技術振興機構 選択的に化学修飾されたカーボンナノチューブの製造方法
US8940937B2 (en) 2010-02-04 2015-01-27 Japan Science And Technology Agency Method for producing selectively functionalized carbon nanotubes
JP2011173739A (ja) * 2010-02-23 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> カーボンナノチューブの製造方法
JP2018177562A (ja) * 2017-04-06 2018-11-15 アイシン精機株式会社 カーボンナノチューブ複合体の製造方法
JP7024202B2 (ja) 2017-04-06 2022-02-24 株式会社アイシン カーボンナノチューブ複合体の製造方法

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