US8957565B2 - Acoustic wave device and method for manufacturing the same - Google Patents
Acoustic wave device and method for manufacturing the same Download PDFInfo
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- US8957565B2 US8957565B2 US13/871,069 US201313871069A US8957565B2 US 8957565 B2 US8957565 B2 US 8957565B2 US 201313871069 A US201313871069 A US 201313871069A US 8957565 B2 US8957565 B2 US 8957565B2
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- H01L41/0477—
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- H01L41/293—
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to acoustic wave devices, including surface acoustic wave filters and boundary acoustic wave filters, and methods for manufacturing such acoustic wave devices. More specifically the present invention relates to an acoustic wave device including a piezoelectric substrate on which electrodes including IDT electrodes, wiring electrodes, and pad electrodes are arranged and a method for manufacturing such an acoustic wave device.
- Acoustic wave devices are widely used as bandpass filters and duplexers for mounting on radio-frequency (RF) circuits in communication equipment such as cellular phones.
- RF radio-frequency
- Known acoustic wave devices include surface acoustic wave devices, which use surface acoustic waves, and boundary acoustic wave devices, which use boundary acoustic waves.
- An acoustic wave device includes a piezoelectric substrate and electrodes arranged on the piezoelectric substrate, including Inter-Digital Transducer (IDT) electrodes, wiring electrodes, and pad electrodes.
- IDT Inter-Digital Transducer
- Japanese Unexamined Patent Application Publication No. 2005-117151 discloses a surface acoustic wave device including wiring electrodes continuous with IDT electrodes and made of a layered metal film including a plurality of electrode films deposited in layers. According to the disclosure in Japanese Unexamined Patent Application Publication No. 2005-117151, this structure reduces the resistance of the wiring electrodes.
- a first electrode film is initially arranged on a piezoelectric substrate to define electrode portions including IDT electrodes.
- a second electrode film is then arranged to overlap the first electrode film.
- the second electrode film is arranged in the regions where bus bars of the IDT electrodes, wiring electrodes, and pad electrodes are to be arranged.
- the second electrode film can be made thicker to reduce the wiring resistance.
- the second electrode film can be defined using an appropriate conductive material such as aluminum, copper, gold, or titanium.
- An acoustic wave device such as the surface acoustic wave device disclosed in Japanese Unexamined Patent Application Publication No. 2005-117151 might suffer migration in an electrode film defining wiring electrodes. Migration might cause a break in the wiring electrodes and a short circuit between wiring electrodes connected to different potentials due to whiskers and electrode scraps produced by migration.
- Migration occurs when acoustic wave vibrations induced by IDT electrodes are applied to the wiring electrodes. In addition, migration probably occurs when heat due to passage of high-frequency power through the wiring electrodes is applied to the wiring electrodes. In particular, migration is more likely to occur in wiring electrodes made of aluminum or gold.
- Preferred embodiments of the present invention provide an acoustic wave device in which migration can be effectively inhibited in an electrode film defining a wiring electrode, so that the wiring electrode is unlikely to be broken or short-circuited, and also to provide a method by which such an acoustic wave device can be manufactured.
- An acoustic wave device includes a piezoelectric substrate, a first electrode film arranged on a top surface of the piezoelectric substrate and defining electrodes including IDT electrodes, and a second electrode film arranged to extend from the top surface of the piezoelectric substrate to a portion of a top surface of the first electrode film.
- the second electrode film preferably defines electrodes including a wiring electrode and a pad electrode and is made of a layered metal film including a plurality of metal films deposited in layers.
- the lowermost layer of the layered metal film defining the second electrode film preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper, and the lowermost layer of the layered metal film defining the second electrode film is arranged to extend to a side surface of the second electrode film.
- the layered metal film defining the second electrode film preferably includes a metal film made of aluminum or gold.
- the uppermost layer of the layered metal film defining the second electrode film preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- the acoustic wave device preferably further includes a third electrode film arranged on the second electrode film.
- the third electrode film preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- the acoustic wave device preferably further includes an insulating film arranged on the second electrode film.
- the insulating film may preferably include a film made of an inorganic insulating material selected from the group consisting of SiO 2 , AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON.
- the insulating film may preferably include a film made of an organic insulating material selected from the group consisting of polyimides, epoxy resins, phenolic resins, and amide resins.
- the insulating film may preferably include a film made of an inorganic insulating material selected from the group consisting of SiO 2 , AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON and a film made of an organic insulating material selected from the group consisting of polyimides, epoxy resins, phenolic resins, and amide resins.
- a method for manufacturing an acoustic wave device includes the steps of forming a first electrode film that defines electrodes including IDT electrodes on a top surface of a piezoelectric substrate; forming a resist layer so as to cover the top surfaces of the first electrode film and the piezoelectric substrate; patterning the resist layer to form a resist pattern including an opening; depositing a plurality of metal films in sequence after forming the resist pattern including the opening such that, of the plurality of metal films, the metal film deposited first extends from the top surface of the piezoelectric substrate to a side surface of the resist pattern; and removing the resist pattern to form a second electrode film that is made of a layered metal film including the plurality of metal films and that defines electrodes including a wiring electrode and a pad electrode.
- the plurality of metal films preferably are continuously deposited by evaporation.
- the plurality of metal films preferably are continuously deposited by evaporation using a planetary rotating and orbiting vacuum evaporation system.
- the metal film deposited first preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- the plurality of metal films preferably include a metal film made of aluminum or gold.
- the metal film deposited last preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- the method further includes a step of forming a third electrode film on the second electrode film.
- the third electrode film is preferably made of a metal film selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- the method preferably further includes a step of defining an insulating film on the second electrode film.
- the insulating film may preferably include a film made of an inorganic insulating material selected from the group consisting of SiO 2 , AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON, may include a film made of an organic insulating material selected from the group consisting of polyimides, epoxy resins, phenolic resins, and amide resins, or may include a film made of an inorganic insulating material selected from the group consisting of SiO 2 , AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON and a film made of an organic insulating material selected from the group consisting of polyimides, epoxy resins, phenolic resins, and amide resins.
- the second electrode film defines electrodes including a wiring electrode and a pad electrode and is made of a layered metal film including a plurality of metal films deposited in layers
- the lowermost layer of the layered metal film defining the second electrode film preferably is made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper
- the lowermost layer of the layered metal film defining the second electrode film is arranged to extend to a side surface of the second electrode film
- the acoustic wave device can be manufactured by forming a first electrode film that defines electrodes including IDT electrodes on a top surface of a piezoelectric substrate; forming a resist pattern including an opening; depositing a plurality of metal films in sequence such that, of the plurality of metal films, the metal film deposited first extends from the top surface of the piezoelectric substrate to a side surface of the resist pattern; and removing the resist pattern to form a second electrode film that defines electrodes including a wiring electrode and a pad electrode.
- an acoustic wave device of a preferred embodiment of the present invention which is resistant to migration in a wiring electrode, and which is therefore resistant to short-circuits in the wiring electrode, can be provided.
- the acoustic wave device of various preferred embodiments of the present invention can be easily provided.
- FIG. 1A is a schematic plan view showing the state after a piezoelectric substrate is prepared in a method for manufacturing an acoustic wave device according to a first preferred embodiment of the present invention
- FIG. 1B is a schematic sectional view taken along line B 1 -B 1 in FIG. 1A .
- FIG. 2A is a schematic plan view showing the state after a first electrode film is arranged on the piezoelectric substrate in the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention
- FIG. 2B is a schematic sectional view taken along line B 2 -B 2 in FIG. 2A .
- FIG. 3A is a schematic plan view showing the state after a second electrode film is arranged in the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention
- FIG. 3B is a schematic sectional view taken along line B 3 -B 3 in FIG. 3A .
- FIG. 4A is a schematic sectional view showing the state after a resist layer is arranged on the piezoelectric substrate on which the first electrode film is arranged in the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention
- FIG. 4B is a schematic sectional view showing the state after a resist pattern is formed.
- FIG. 5A is a schematic sectional view showing the state after a layered metal film defining a second electrode layer is arranged in the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention
- FIG. 5B is a schematic sectional view showing the state after the resist pattern is removed.
- FIGS. 6A and 6B are a schematic sectional view and a schematic plan view, respectively, illustrating a planetary rotating and orbiting vacuum evaporation system used in the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention.
- FIG. 7A is a schematic plan view of an acoustic wave device manufactured by the method for manufacturing the acoustic wave device according to the first preferred embodiment of the present invention
- FIG. 7B is a schematic sectional view taken along line B 4 -B 4 in FIG. 7A .
- FIG. 8 is a schematic sectional view illustrating the profile of the lowermost layer of the second electrode layer in the acoustic wave device according to the first preferred embodiment of the present invention.
- FIG. 9A is a schematic plan view showing the state after a second electrode film is arranged in a method for manufacturing an acoustic wave device according to a second preferred embodiment of the present invention
- FIG. 9B is a schematic sectional view taken along line B 5 -B 5 in FIG. 9A .
- FIG. 10A is a schematic plan view showing the state after openings are arranged in the method for manufacturing the acoustic wave device according to the second preferred embodiment of the present invention
- FIG. 10B is a schematic sectional view taken along line B 6 -B 6 in FIG. 10A .
- FIG. 11A is a schematic plan view of an acoustic wave device manufactured by the method for manufacturing the acoustic wave device according to the second preferred embodiment of the present invention
- FIG. 11B is a schematic sectional view taken along line B 7 -B 7 in FIG. 11A .
- FIG. 12A is a schematic plan view showing the state after a third electrode film is arranged in a method for manufacturing an acoustic wave device according to a third preferred embodiment of the present invention
- FIG. 12B is a schematic sectional view taken along line B 8 -B 8 in FIG. 12A .
- FIG. 13A is a schematic plan view showing the state after openings are arranged in the method for manufacturing the acoustic wave device according to the third preferred embodiment of the present invention
- FIG. 13B is a schematic sectional view taken along line B 9 -B 9 in FIG. 13A .
- FIG. 14A is a schematic plan view of an acoustic wave device manufactured by the method for manufacturing the acoustic wave device according to the third preferred embodiment of the present invention
- FIG. 14B is a schematic sectional view taken along line B 10 -B 10 in FIG. 14A .
- FIG. 15A is a schematic plan view showing the state after an insulating film is arranged in a method for manufacturing an acoustic wave device according to a fourth preferred embodiment of the present invention
- FIG. 15B is a schematic sectional view taken along line B 11 -B 11 in FIG. 15A .
- FIG. 16A is a schematic plan view showing the state after openings are arranged in the method for manufacturing the acoustic wave device according to the fourth preferred embodiment of the present invention
- FIG. 16B is a schematic sectional view taken along line B 12 -B 12 in FIG. 16A .
- FIG. 17A is a schematic plan view of an acoustic wave device manufactured by the method for manufacturing the acoustic wave device according to the fourth preferred embodiment of the present invention
- FIG. 17B is a schematic sectional view taken along line B 13 -B 13 in FIG. 17A .
- FIGS. 1A to 7B A method for manufacturing an acoustic wave device according to a first preferred embodiment of the present invention will be described with reference to FIGS. 1A to 7B to illustrate the structure of the acoustic wave device.
- a piezoelectric substrate 1 is prepared.
- the piezoelectric substrate 1 preferably is a lithium tantalate substrate in this preferred embodiment.
- the piezoelectric substrate 1 may be any other desirable piezoelectric substrate, such as, for example, a lithium niobate substrate, a lithium tetraborate substrate, a langasite substrate, a quartz crystal substrate, etc.
- a first electrode film 2 is arranged on the top surface of the piezoelectric substrate 1 .
- the first electrode film 2 defines Inter-Digital Transducer (IDT) electrodes 3 and reflectors 4 and 5 .
- the IDT electrodes 3 preferably include a pair of bus bars 3 a and 3 b and a plurality of electrode fingers 3 c connected to the bus bar 3 a or the bus bar 3 b .
- the reflectors 4 and 5 include a pair of bus bars and a plurality of electrode fingers connected to both of the pair of bus bars.
- the first electrode film 2 is preferably made of a layered metal film including, for example, a titanium film and an aluminum-copper alloy film deposited thereon.
- the titanium film preferably has a thickness of about 10 nm
- the aluminum-copper alloy film preferably has a thickness of about 150 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 1% by weight, for example.
- the first electrode film 2 is not limited to the above layered metal film.
- materials that can be used for the metal films defining the first electrode film 2 include metals such as, for example, aluminum, platinum, gold, tungsten, palladium, silver, nickel, chromium, copper, magnesium, and tantalum and alloys mainly containing these metals.
- the first electrode film 2 is preferably formed by a lift-off process with evaporation.
- the first electrode film 2 may be formed by other methods such as, for example, sputtering and etching.
- the first electrode film 2 may also be made of a single metal film.
- a second electrode film 6 is provided.
- the second electrode film 6 is arranged to extend from the top surface of the piezoelectric substrate 1 to a portion of the top surface of the first electrode film 2 . More specifically, the second electrode film 6 is arranged to extend from the top surface of the piezoelectric substrate 1 to the tops of the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 .
- the second electrode film 6 defines the bus bars 3 a and 3 b of the IDT electrodes 3 , the bus bars of the reflectors 4 and 5 , a wiring electrode 9 , and pad electrodes 10 a to 10 c . Accordingly, the bus bars 3 a and 3 b of the IDT electrodes 3 are preferably made of the laminate of the first electrode film 2 and the second electrode film 6 . The same applies to the bus bars of the reflectors 4 and 5 . This improves the effect of confining surface acoustic waves in the IDT electrodes 3 .
- the electrode fingers 3 c of the IDT electrodes 3 and the electrode fingers of the reflectors 4 and 5 are preferably composed only of the first electrode film 2 .
- the wiring electrode 9 and the pad electrodes 10 a to 10 c are preferably composed only of the second electrode film 6 .
- the second electrode film 6 is preferably made of a layered metal film including an aluminum-copper alloy film, a titanium film, and an aluminum film deposited in this order. That is, as shown in FIG. 3B , the lowermost layer 6 a of the second electrode film 6 is preferably made of an aluminum-copper alloy film.
- the metal films other than the lowermost layer 6 a in the second electrode film 6 are collectively shown as an upper layer 6 b .
- the uppermost layer of the second electrode film 6 is assigned a reference sign if the uppermost layer should be distinguished from the remaining metal layers, as described later.
- the aluminum-copper alloy film has a thickness of about 700 nm, the titanium film has a thickness of about 500 nm, and the aluminum film has a thickness of about 1,140 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 10% by weight, for example.
- the second electrode film 6 is not limited to the above layered metal film. That is, as long as the second electrode film 6 is made of a layered metal film including a plurality of metal films deposited in layers, the lowermost layer 6 a may be a metal film made of a metal selected from the group consisting of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper, for example.
- Non-limiting examples of materials that can be used for the metal films defining the upper layer 6 b include metals such as, for example, aluminum, platinum, gold, tungsten, palladium, silver, nickel, chromium, copper, magnesium, and tantalum and alloys mainly containing these metals.
- the layers other than the lowermost layer 6 a are preferably made of a metal film of aluminum to reduce the resistance of the second electrode film 6 , particularly, to reduce the resistance of the wiring electrode 9 .
- the uppermost layer of the second electrode film 6 is preferably made of a metal film of gold. This increases the adhesion strength of the bumps.
- the second electrode film 6 includes an aluminum film, which reduces the resistance of the wiring electrode 9 .
- the second electrode film 6 is thicker than the first electrode film 2 . This also reduces the resistance of the wiring electrode 9 .
- a resist layer 11 is arranged to cover the entire top surface of the piezoelectric substrate 1 on which the first electrode film 2 is provided. That is, the resist layer 11 is arranged to cover the entire top surfaces of the first electrode film 2 and the piezoelectric substrate 1 .
- the resist layer 11 is preferably made of a photoresist.
- the resist layer 11 is preferably patterned by exposure to form a resist pattern 11 A including openings 11 a .
- the openings 11 a are located in the region where the second electrode film 6 is to be arranged on the first electrode film 2 so as to overlap the first electrode film 2 and the region where the second electrode film 6 is to be arranged on the piezoelectric substrate 1 .
- a layered metal film that defines the second electrode film 6 is preferably deposited by evaporation.
- an aluminum-copper alloy film, a titanium film, and an aluminum film are preferably continuously deposited using, for example, a planetary rotating and orbiting vacuum evaporation system.
- a planetary rotating and orbiting vacuum evaporation system 12 preferably includes a dome 13 .
- Substrate holders 15 are coupled to the bottom surface of the dome 13 with rotating shafts 14 therebetween.
- the substrate holders 15 are rotated by the rotating shafts 14 in the direction indicated by arrow C shown.
- a plurality of piezoelectric substrates 1 are held on the bottom surfaces of the substrate holders 15 .
- the resist pattern 11 A has been arranged on the piezoelectric substrates 1 .
- the top surface of the dome 13 is in turn coupled to a rotating shaft 16 and is rotated by the rotating shaft 16 in the direction indicated by arrow D shown.
- the rotating shaft 16 is coupled to the center of the dome 13 .
- the substrate holders 15 coupled to the dome 13 with the rotating shafts 14 therebetween, are rotated in the arrow C direction. That is, the piezoelectric substrates 1 held by the substrate holders 15 are rotated in the arrow C direction by the rotating shafts 14 , and the substrate holders 15 themselves are rotated in the arrow D direction by the rotating shaft 16 .
- Evaporation is performed in a vacuum with an evaporation source 17 disposed below the dome 13 .
- the aluminum-copper alloy film, the titanium film, and the aluminum film that form the second electrode film 6 can preferably be continuously deposited in sequence.
- the planetary rotating and orbiting vacuum evaporation system is a known structure, as disclosed in, for example, Japanese Unexamined Patent Application Publication Nos. 2010-106325 and 2008-121103.
- the second electrode film 6 can be reliably formed such that the portion of the second electrode film 6 defining the lowermost layer 6 a extends to the side surfaces of the resist pattern 11 A.
- the second electrode film 6 can be arranged to extend from the top surface of the piezoelectric substrate 1 to a portion of the top surface of the first electrode film 2 .
- the lowermost layer 6 a of the second electrode film 6 is arranged to extend to the side surfaces of the second electrode film 6 .
- the top end 6 h of the portion of the lowermost layer 6 a extending along the side surfaces of the second electrode film 6 is located higher than the top of the main portion of the rest of the second electrode film 6 , namely, the upper layer 6 b .
- the top end 6 h of the portion of the lowermost layer 6 a extending along the side surfaces of the second electrode film 6 may preferably be higher than the top surface of the uppermost one of the other metal films defining the second electrode film 6 . This effectively inhibits migration.
- gold bumps 7 are preferably arranged on the pad electrodes 10 a to 10 c .
- the bumps may alternatively be made of another metal such as, for example, aluminum or solder.
- an acoustic wave device 8 shown in FIGS. 7A and 7B can be manufactured.
- the acoustic wave device 8 is preferably a one-port surface acoustic wave resonator.
- migration can be reliably inhibited in the wiring electrode 9 . This will be more specifically described below.
- a common acoustic wave device including a wiring electrode made of a layered metal film including an aluminum film or a gold film tends to suffer migration in the electrode films defining the wiring electrode. Migration occurs when acoustic wave vibrations induced by IDT electrodes are applied to the wiring electrode or when heat due to passage of high-frequency power through the wiring electrode is applied to the wiring electrode. For an aluminum film or a gold film, migration tends to occur at a temperature of about 150° C. to about 200° C.
- the lowermost layer 6 a of the second electrode film 6 which defines the wiring electrode 9 , is preferably made of an aluminum-copper alloy film.
- This aluminum-copper alloy film, defining the lowermost layer 6 a is arranged to cover the side surfaces of the upper layer 6 b , which is preferably made of a titanium film and an aluminum film.
- An aluminum-copper alloy film is resistant to migration; it does not occur even at a temperature of about 150° C. to about 200° C.
- the side surfaces of the aluminum film in the upper layer 6 b are covered with the lowermost layer 6 a , which is preferably made of an aluminum-copper alloy film.
- the acoustic wave device 8 is therefore resistant to migration in the side surfaces of the aluminum film in the upper layer 6 b even when exposed to a temperature of about 150° C. to about 200° C. Because the side surfaces of the aluminum film in the upper layer 6 b are covered with the portion of the lowermost layer 6 a extending along the side surfaces of the second electrode film 6 , as shown in FIG. 7B , migration can be effectively inhibited in the second electrode film 6 , which defines the wiring electrode 9 .
- the lowermost layer 6 a which inhibits migration, is preferably made of an aluminum-copper alloy film in this preferred embodiment, the lowermost layer 6 a may alternatively be made of another metal that is more resistant to migration than the metal films of the other layers of the second electrode film 6 .
- these metals include aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper.
- Metal films made of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper are more resistant to migration than an aluminum film and a gold film. These metals can therefore be used to reliably inhibit migration in the second electrode film 6 .
- the lowermost layer 6 a preferably has a thickness of about 100 nm or more, for example. If the lowermost layer 6 a has a thickness of about 100 nm or more, it can more effectively inhibit migration in the aluminum film in the upper layer 6 b.
- FIGS. 9A to 11B An acoustic wave device and a method for manufacturing the acoustic wave device according to a second preferred embodiment of the present invention will now be described with reference to FIGS. 9A to 11B .
- the piezoelectric substrate 1 is prepared first, and the first electrode film 2 is arranged on the top surface of the piezoelectric substrate 1 .
- the first electrode film 2 preferably defines the IDT electrodes 3 and the reflectors 4 and 5 .
- the same elements as in the first preferred embodiment are assigned the same reference signs to omit a description thereof.
- the first electrode film 2 is made of a layered metal film including a titanium film and an aluminum-copper alloy film deposited thereon.
- the titanium film preferably has a thickness of about 10 nm
- the aluminum-copper alloy film has a thickness of about 150 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 1% by weight, for example.
- a second electrode film 6 A is provided.
- the second electrode film 6 A is arranged to extend from the top surface of the piezoelectric substrate 1 to a portion of the top surface of the first electrode film 2 . More specifically, the second electrode film 6 A is arranged to extend from the top surface of the piezoelectric substrate 1 to the top surfaces of the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 .
- the second electrode film 6 A preferably defines the bus bars 3 a and 3 b of the IDT electrodes 3 , the bus bars of the reflectors 4 and 5 , the wiring electrode 9 , and the pad electrodes 10 a to 10 c .
- the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 are made of the laminate of the first electrode film 2 and the second electrode film 6 A. This improves the effect of confining surface acoustic waves in the IDT electrodes 3 .
- the electrode fingers 3 c of the IDT electrodes 3 and the electrode fingers of the reflectors 4 and 5 are preferably only defined by the first electrode film 2 .
- the wiring electrode 9 and the pad electrodes 10 a to 10 c are preferably only defined by the second electrode film 6 A.
- the second electrode film 6 A is preferably made of a layered metal film including an aluminum-copper alloy film, a titanium film, an aluminum film, and a titanium film deposited in the above order. That is, the lowermost layer 6 a of the second electrode film 6 A is an aluminum-copper alloy film, and the uppermost layer 6 c is a titanium film.
- the second electrode film 6 A can be defined using a planetary rotating and orbiting evaporation system. Specifically, the second electrode film 6 A is preferably formed by a lift-off process with evaporation using a planetary rotating and orbiting evaporation system.
- the aluminum-copper alloy film, the titanium film, the aluminum film, and the titanium film are continuously deposited in the above order using a planetary rotating and orbiting vacuum evaporation system.
- the lowermost layer 6 a namely, the aluminum-copper alloy film
- the titanium film deposited on the top surface thereof preferably has a thickness of about 500 nm
- the aluminum film preferably has a thickness of about 1,140 nm
- the uppermost layer 6 c namely, the titanium film, preferably has a thickness of about 100 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 10% by weight, for example.
- the lowermost layer 6 a may preferably be a metal film made of one of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper, for example.
- the uppermost layer 6 c is also preferably made of titanium. This more effectively inhibits migration in the second electrode film 6 A, which defines the wiring electrode 9 .
- the lowermost layer 6 a and the portion of the upper layer 6 b other than the uppermost layer 6 c can be defined using an appropriate metal or alloy.
- the second electrode film 6 A preferably includes an aluminum film, which reduces the resistance of the wiring electrode 9 .
- the second electrode film 6 A is thicker than the first electrode film 2 . This also preferably reduces the resistance of the wiring electrode 9 .
- the uppermost layer 6 c of the second electrode film 6 A namely, the titanium film
- the uppermost layer 6 c of the second electrode film 6 A is preferably etched to define openings 6 d in the uppermost layer 6 c , namely, the titanium film.
- the top surface of the upper layer 6 b is exposed in the openings 6 d.
- gold bumps 7 are preferably arranged on the pad electrodes 10 a to 10 c .
- the bumps 7 are arranged on the aluminum film exposed in the openings 6 d .
- the bumps 7 may alternatively be made of another metal such as, for example, aluminum or solder.
- the uppermost layer 6 c of the second electrode film 6 A namely, the titanium film
- the openings 6 d in the uppermost layer 6 c namely, the titanium film.
- the gold bumps 7 contact the aluminum film. This results in increased adhesion strength between the pad electrodes 10 a to 10 c and the bumps 7 .
- an acoustic wave device 8 A shown in FIGS. 11A and 11B can be manufactured.
- the acoustic wave device 8 A is preferably a one-port surface acoustic wave resonator.
- the acoustic wave device 8 A of this preferred embodiment is characterized in that the lowermost layer 6 a of the second electrode film 6 A, which defines the wiring electrode 9 , is preferably made of an aluminum-copper alloy film arranged to cover the side surfaces of the upper layer 6 b , which is made of a titanium film and an aluminum film, and in that a titanium film is provided as the uppermost layer 6 c .
- the aluminum-copper alloy film defining the lowermost layer 6 a of the second electrode film 6 A and the titanium film defining the uppermost layer 6 c are resistant to migration. Specifically, migration preferably does not occur at a temperature of about 150° C. to about 200° C.
- the aluminum-copper alloy film defining the lowermost layer 6 a which covers the side surfaces of the upper layer 6 b of the second electrode film 6 A, preferably inhibits migration in the side surfaces of the aluminum film in the upper layer 6 b .
- the titanium film defining the uppermost layer 6 c of the second electrode film 6 A preferably inhibits migration in the top surface of the aluminum film in the upper layer 6 b .
- migration can be effectively inhibited in the side and top surfaces of the aluminum film in the upper layer 6 b of the second electrode film 6 A.
- a surface acoustic wave device in which a piezoelectric substrate having electrodes provided thereon is bonded to, for example, a mounting board by flip chip bonding, migration in a wiring electrode or pad electrode causes a problem such as a short-circuit between the wiring electrode or pad electrode and a land electrode arranged on a die-attach surface of the mounting board. Such a problem can be reliably avoided in the acoustic wave device 8 A of the present preferred embodiment.
- the uppermost layer 6 c which inhibits migration, is preferably made of a titanium film in this preferred embodiment, the uppermost layer 6 c may be made of another metal that is more resistant to migration than the lowermost layer 6 a and the metal films other than the uppermost layer 6 c of the second electrode film 6 A.
- the uppermost layer 6 c may be a metal film made of one of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper. These metals can be used to reliably inhibit migration in the second electrode film 6 A.
- the uppermost layer 6 c preferably has a thickness of about 100 nm or more, for example. In this case, migration can be more effectively inhibited in the aluminum film in the upper layer 6 b.
- FIGS. 12A to 14B An acoustic wave device and a method for manufacturing the acoustic wave device according to a third preferred embodiment of the present invention will now be described with reference to FIGS. 12A to 14B .
- the piezoelectric substrate 1 is preferably prepared first, and the first electrode film 2 is arranged on the top surface of the piezoelectric substrate 1 .
- the first electrode film 2 preferably defines the IDT electrodes 3 and the reflectors 4 and 5 .
- the same elements as in the first preferred embodiment are assigned the same reference signs to omit a description thereof.
- the first electrode film 2 is preferably made of a layered metal film including a titanium film and an aluminum-copper alloy film deposited thereon.
- the titanium film preferably has a thickness of about 10 nm
- the aluminum-copper alloy film has a thickness of about 150 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 1% by weight, for example.
- the second electrode film 6 is provided.
- the second electrode film 6 is arranged to extend from the top surface of the piezoelectric substrate 1 to a portion of the top surface of the first electrode film 2 . More specifically, the second electrode film 6 is arranged to extend from the top surface of the piezoelectric substrate 1 to the tops of the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 .
- the second electrode film 6 defines the bus bars 3 a and 3 b of the IDT electrodes 3 , the bus bars of the reflectors 4 and 5 , the wiring electrode 9 , and the pad electrodes 10 a to 10 c .
- the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 are made of the laminate of the first electrode film 2 and the second electrode film 6 . This improves the effect of confining surface acoustic waves in the IDT electrodes 3 .
- the electrode fingers 3 c of the IDT electrodes 3 and the electrode fingers of the reflectors 4 and 5 preferably are composed only of the first electrode film 2 .
- the wiring electrode 9 and the pad electrodes 10 a to 10 c preferably are composed only of the second electrode film 6 .
- the second electrode film 6 is made of a layered metal film including an aluminum-copper alloy film, a titanium film, and an aluminum film deposited in the above order. That is, as shown in FIG. 12B , the lowermost layer 6 a of the second electrode film 6 is preferably made of an aluminum-copper alloy film.
- the aluminum-copper alloy film preferably has a thickness of about 700 nm
- the titanium film preferably has a thickness of about 500 nm
- the aluminum film preferably has a thickness of about 1,140 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 10% by weight, for example.
- the second electrode film 6 can be defined using a planetary rotating and orbiting evaporation system.
- the second electrode film 6 is preferably formed by a lift-off process with evaporation using a planetary rotating and orbiting vacuum evaporation system.
- a third electrode film 31 is preferably arranged on the second electrode film 6 .
- the third electrode film 31 is preferably made of a titanium film.
- the third electrode film 31 may be made of another metal film if so desired.
- the third electrode film 31 is preferably formed by a lift-off process with evaporation.
- the third electrode film 31 may be formed by, for example, sputtering, etching, etc.
- the third electrode film 31 namely, the titanium film, is preferably etched to define openings 31 a in the third electrode film 31 .
- the top surface of the upper layer 6 b of the second electrode film 6 specifically, the top surface of the aluminum film, is exposed by the openings 31 a.
- gold bumps 7 are preferably arranged on the pad electrodes 10 a to 10 c .
- the bumps 7 are arranged on the aluminum film, exposed in the openings 31 a of the third electrode film 31 , in the upper layer 6 b of the second electrode film 6 .
- the bumps 7 may also be made of another metal such as, for example, aluminum or solder.
- the third electrode film 31 namely, the titanium film, is preferably etched to define the openings 31 a . Accordingly, the gold bumps 7 contact the aluminum film in the upper layer 6 b of the second electrode film 6 . This results in increased adhesion strength between the pad electrodes 10 a to 10 c and the bumps 7 .
- an acoustic wave device 8 B shown in FIGS. 14A and 14B can be manufactured.
- the acoustic wave device 8 B is preferably a one-port surface acoustic wave resonator.
- the acoustic wave device 8 B of this preferred embodiment is characterized in that the lowermost layer 6 a of the second electrode film 6 , which defines the wiring electrode 9 , is preferably made of an aluminum-copper alloy film arranged to cover the side surfaces of the upper layer 6 b , which is preferably made of a titanium film and an aluminum film, and in that the third electrode film 31 is arranged on the second electrode film 6 .
- the aluminum-copper alloy film defining the lowermost layer 6 a of the second electrode film 6 and the titanium film defining the third electrode film 31 are resistant to migration. Specifically, migration preferably does not occur at a temperature of about 150° C. to about 200° C.
- the third electrode film 31 is preferably formed by a different deposition process from the second electrode film 6 .
- the third electrode film 31 can therefore be arranged to completely cover the top surfaces of the aluminum film in the upper layer 6 b of the second electrode film 6 and the aluminum-copper alloy film defining the lowermost layer 6 a .
- the third electrode film 31 can more reliably inhibit migration in the top surface of the aluminum film in the upper layer 6 b of the second electrode film 6 .
- the aluminum-copper alloy film defining the lowermost layer 6 a which covers the side surfaces of the upper layer 6 b of the second electrode film 6 , preferably inhibits migration in the side surfaces of the aluminum film in the upper layer 6 b .
- the titanium film defining the third electrode film 31 preferably inhibits migration in the top surface of the aluminum film in the upper layer 6 b .
- the third electrode film 31 which inhibits migration, is preferably made of a titanium film in this preferred embodiment, it may be made of another metal that is more resistant to migration than the metal films of the second electrode film 6 other than the lowermost layer 6 a .
- the third electrode film 31 may be a metal film made of, for example, one of aluminum-copper alloy, nickel-chromium alloy, aluminum-silicon alloy, aluminum-titanium alloy, titanium, and copper. These metals can be used to reliably inhibit migration in the second electrode film 6 .
- the third electrode film 31 preferably has a thickness of about 100 nm or more, for example. In this case, migration can be more effectively inhibited in the aluminum film in the upper layer 6 b.
- FIGS. 15A to 17B An acoustic wave device and a method for manufacturing the acoustic wave device according to a fourth preferred embodiment of the present invention will now be described with reference to FIGS. 15A to 17B .
- the piezoelectric substrate 1 is preferably prepared first, and the first electrode film 2 is arranged on the top surface of the piezoelectric substrate 1 .
- the first electrode film 2 preferably defines the IDT electrodes 3 and the reflectors 4 and 5 .
- the same elements as in the first preferred embodiment are assigned the same reference signs to omit a description thereof.
- the first electrode film 2 is preferably made of a layered metal film including a titanium film and an aluminum-copper alloy film deposited thereon.
- the titanium film preferably has a thickness of about 10 nm
- the aluminum-copper alloy film preferably has a thickness of about 150 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 1% by weight, for example.
- the second electrode film 6 is preferably provided.
- the second electrode film 6 is preferably arranged to extend from the top surface of the piezoelectric substrate 1 to a portion of the top surface of the first electrode film 2 . More specifically, the second electrode film 6 is preferably arranged to extend from the top surface of the piezoelectric substrate 1 to the tops of the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 .
- the second electrode film 6 preferably defines the bus bars 3 a and 3 b of the IDT electrodes 3 , the bus bars of the reflectors 4 and 5 , the wiring electrode 9 , and the pad electrodes 10 a to 10 c .
- the bus bars 3 a and 3 b of the IDT electrodes 3 and the bus bars of the reflectors 4 and 5 are preferably made of the laminate of the first electrode film 2 and the second electrode film 6 . This improves the effect of confining surface acoustic waves in the IDT electrodes 3 .
- the electrode fingers 3 c of the IDT electrodes 3 and the electrode fingers of the reflectors 4 and 5 are preferably provided by only the first electrode film 2 .
- the wiring electrode 9 and the pad electrodes 10 a to 10 c are preferably provided by only the second electrode film 6 .
- the second electrode film 6 is preferably made of a layered metal film including an aluminum-copper alloy film, a titanium film, and an aluminum film deposited in the above order. That is, as shown in FIG. 15B , the lowermost layer 6 a of the second electrode film 6 is preferably made of an aluminum-copper alloy film.
- the aluminum-copper alloy film preferably has a thickness of about 700 nm
- the titanium film preferably has a thickness of about 500 nm
- the aluminum film preferably has a thickness of about 1,140 nm, for example.
- the aluminum-copper alloy film preferably has a copper concentration of about 10% by weight, for example.
- the second electrode film 6 can be defined using a planetary rotating and orbiting evaporation system.
- the second electrode film 6 is preferably formed by a lift-off process with evaporation using a planetary rotating and orbiting vacuum evaporation system.
- an insulating film 41 is preferably arranged on the second electrode film 6 .
- the insulating film 41 is preferably made of a SiO 2 film.
- the insulating film 41 is preferably formed by sputtering and dry etching.
- the insulating film 41 may be formed by any desirable process, such as evaporation, coating, wet etching, etc.
- the insulating film 41 namely, the SiO 2 film, is preferably etched to form openings 41 a in the insulating film 41 .
- the top surface of the upper layer 6 b of the second electrode film 6 specifically, the top surface of the aluminum film, is exposed by the openings 41 a.
- gold bumps 7 are preferably arranged on the pad electrodes 10 a to 10 c .
- the bumps 7 are arranged on the aluminum film, exposed in the openings 41 a of the insulating film 41 , in the upper layer 6 b of the second electrode film 6 .
- the bumps 7 may alternatively be made of another metal such as, for example, aluminum or solder.
- the insulating film 41 namely, the SiO 2 film, is preferably etched to form the openings 41 a . Accordingly, the gold bumps 7 contact the aluminum film in the upper layer 6 b of the second electrode film 6 . This results in increased adhesion strength between the pad electrodes 10 a to 10 c and the bumps 7 .
- an acoustic wave device 8 c shown in FIGS. 17A and 17B can be manufactured.
- the acoustic wave device 8 C is a one-port surface acoustic wave resonator.
- the acoustic wave device 8 c of this preferred embodiment is characterized in that the lowermost layer 6 a of the second electrode film 6 , which defines the wiring electrode 9 , is preferably made of an aluminum-copper alloy film arranged to cover the side surfaces of the upper layer 6 b , which is made of a titanium film and an aluminum film, and in that the insulating film 41 is arranged on the second electrode film 6 .
- the aluminum-copper alloy film defining the lowermost layer 6 a of the second electrode film 6 is resistant to migration. Specifically, migration preferably does not occur at a temperature of about 150° C. to about 200° C. In addition, migration preferably does not occur in the insulating film 41 .
- the insulating film 41 can be arranged to completely cover the top surfaces of the aluminum film in the upper layer 6 b of the second electrode film 6 and the aluminum-copper alloy film defining the lowermost layer 6 a .
- the insulating film 41 can more reliably inhibit migration in the top surface of the aluminum film in the upper layer 6 b of the second electrode film 6 .
- the aluminum-copper alloy film defining the lowermost layer 6 a which covers the side surfaces of the upper layer 6 b of the second electrode film 6 , inhibits migration in the side surfaces of the aluminum film in the upper layer 6 b .
- the insulating film 41 namely, the SiO 2 film, inhibits migration in the top surface of the aluminum film in the upper layer 6 b of the second electrode film 6 .
- migration can be more reliably inhibited in the side and top surfaces of the aluminum film in the upper layer 6 b of the second electrode film 6 .
- the insulating film 41 which inhibits migration, is preferably made of a SiO 2 film in this preferred embodiment, it can be defined using various insulating materials.
- an insulating material an inorganic insulating material or an organic insulating material can be used. If an inorganic insulating material is used, the insulating film 41 is resistant to degradation when exposed to relatively high temperatures. Examples of such materials for defining inorganic insulating films include, for example, AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON.
- the insulating film 41 can be formed by a process with relatively low temperature.
- organic resins such as polyimides, epoxy resins, phenolic resins, and amide resins.
- the insulating film 41 may also be a laminate of a film of an inorganic insulating material selected from the group consisting of SiO 2 , AlN, Al 2 O 3 , Ta 2 O 5 , TeO 2 , SiN, and SiON and a film of an organic insulating material selected from the group consisting of polyimides, epoxy resins, phenolic resins, and amide resins.
- the insulating film 41 preferably has a thickness of about 100 nm or more, for example. In this case, migration can be more effectively inhibited in the aluminum film in the upper layer 6 b.
- the insulating film 41 is preferably arranged to cover the electrode fingers of the IDT electrodes 3 .
- the frequency of the acoustic wave device can be adjusted by adjusting the thickness of the insulating film 41 .
- the acoustic wave device of the present invention is not limited thereto.
- the acoustic wave device of the present invention may also be a surface acoustic wave device such as, for example, a surface acoustic filter or a surface acoustic wave demultiplexer.
- the present invention can be applied to boundary acoustic wave devices.
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JP5880520B2 (ja) * | 2013-10-30 | 2016-03-09 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
WO2015098694A1 (fr) * | 2013-12-26 | 2015-07-02 | 株式会社村田製作所 | Dispositif à onde élastique et son procédé de fabrication |
CN106031031B (zh) | 2014-02-18 | 2019-03-08 | 天工滤波方案日本有限公司 | 声波元件和使用声波元件的梯型滤波器 |
JP6424958B2 (ja) * | 2015-12-25 | 2018-11-21 | 株式会社村田製作所 | 弾性波装置 |
JP6813084B2 (ja) * | 2017-04-28 | 2021-01-13 | 株式会社村田製作所 | 弾性波装置の製造方法 |
US10952642B2 (en) * | 2017-11-09 | 2021-03-23 | Amorepacific Corporation | Strain sensor unit and skin sensor module comprising the same |
DE102018109849B4 (de) * | 2018-04-24 | 2020-03-05 | RF360 Europe GmbH | Elektroakustischer Resonator und Verfahren zum Bilden desselben |
JP7281146B2 (ja) * | 2020-08-03 | 2023-05-25 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイス |
WO2022107681A1 (fr) * | 2020-11-17 | 2022-05-27 | 株式会社村田製作所 | Filtre et multiplexeur |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0998043A (ja) | 1995-09-29 | 1997-04-08 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
EP1089431A2 (fr) | 1999-09-30 | 2001-04-04 | Matsushita Electric Industrial Co., Ltd. | Dispositif à ondes acoustiques de surface et procédé de fabrication du même |
JP2001168676A (ja) | 1999-09-30 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法 |
JP2002026686A (ja) | 2000-07-13 | 2002-01-25 | Murata Mfg Co Ltd | 弾性表面波素子及びその製造方法 |
US20020145362A1 (en) * | 2001-04-10 | 2002-10-10 | Murata Manufacturing Co., Ltd | Surface acoustic wave device, method for making the same, and communication apparatus including the same |
US20030025422A1 (en) | 2001-07-06 | 2003-02-06 | Murata Manufacturing Co., Ltd. | Surface acoustic wave element and manufacturing method of the same |
JP2003283282A (ja) | 2002-01-15 | 2003-10-03 | Murata Mfg Co Ltd | 電極を有する電子部品、及びその製造方法、通信装置 |
US20050071971A1 (en) | 2003-10-03 | 2005-04-07 | Murata Manufacturing Co., Ltd. | Method of producing surface acoustic wave device and the surface acoustic wave device |
JP2005318017A (ja) | 2004-04-26 | 2005-11-10 | Kyocera Corp | 圧電共振素子、圧電共振子及びフィルタ並びに複合基板 |
JP2006238327A (ja) | 2005-02-28 | 2006-09-07 | Seiko Epson Corp | 液滴吐出方式を用いた絶縁膜形成方法、並びに弾性表面波素子片の製造方法、および弾性表面波素子、並びに弾性表面波デバイス |
US20070284966A1 (en) * | 2005-04-06 | 2007-12-13 | Murata Manufacturing Co., Ltd. | Surface wave sensor apparatus |
JP2008121103A (ja) | 2006-10-16 | 2008-05-29 | Able:Kk | 真空蒸着装置 |
JP2010081086A (ja) | 2008-09-24 | 2010-04-08 | Murata Mfg Co Ltd | 弾性波装置及びその製造方法 |
US20100117483A1 (en) | 2007-07-30 | 2010-05-13 | Murata Manufacturing Co., Ltd. | Elastic wave device and method of producing the same |
JP2010106325A (ja) | 2008-10-30 | 2010-05-13 | Canon Inc | 成膜装置、露光装置、デバイス製造方法 |
JP2010252321A (ja) | 2009-03-27 | 2010-11-04 | Kyocera Corp | 弾性表面波装置及びその製造方法 |
-
2011
- 2011-07-08 JP JP2011554304A patent/JP5182437B2/ja active Active
- 2011-07-08 WO PCT/JP2011/065654 patent/WO2012063521A1/fr active Application Filing
- 2011-07-08 CN CN201180053402.2A patent/CN103201866B/zh active Active
-
2013
- 2013-04-26 US US13/871,069 patent/US8957565B2/en active Active
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0998043A (ja) | 1995-09-29 | 1997-04-08 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
EP1089431A2 (fr) | 1999-09-30 | 2001-04-04 | Matsushita Electric Industrial Co., Ltd. | Dispositif à ondes acoustiques de surface et procédé de fabrication du même |
JP2001168676A (ja) | 1999-09-30 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法 |
JP2002026686A (ja) | 2000-07-13 | 2002-01-25 | Murata Mfg Co Ltd | 弾性表面波素子及びその製造方法 |
US20020145362A1 (en) * | 2001-04-10 | 2002-10-10 | Murata Manufacturing Co., Ltd | Surface acoustic wave device, method for making the same, and communication apparatus including the same |
US20030025422A1 (en) | 2001-07-06 | 2003-02-06 | Murata Manufacturing Co., Ltd. | Surface acoustic wave element and manufacturing method of the same |
CN1396709A (zh) | 2001-07-06 | 2003-02-12 | 株式会社村田制作所 | 声表面波元件及其制造方法 |
JP2003283282A (ja) | 2002-01-15 | 2003-10-03 | Murata Mfg Co Ltd | 電極を有する電子部品、及びその製造方法、通信装置 |
US20050071971A1 (en) | 2003-10-03 | 2005-04-07 | Murata Manufacturing Co., Ltd. | Method of producing surface acoustic wave device and the surface acoustic wave device |
JP2005117151A (ja) | 2003-10-03 | 2005-04-28 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法及び弾性表面波装置 |
JP2005318017A (ja) | 2004-04-26 | 2005-11-10 | Kyocera Corp | 圧電共振素子、圧電共振子及びフィルタ並びに複合基板 |
JP2006238327A (ja) | 2005-02-28 | 2006-09-07 | Seiko Epson Corp | 液滴吐出方式を用いた絶縁膜形成方法、並びに弾性表面波素子片の製造方法、および弾性表面波素子、並びに弾性表面波デバイス |
US20070284966A1 (en) * | 2005-04-06 | 2007-12-13 | Murata Manufacturing Co., Ltd. | Surface wave sensor apparatus |
JP2008121103A (ja) | 2006-10-16 | 2008-05-29 | Able:Kk | 真空蒸着装置 |
US20100117483A1 (en) | 2007-07-30 | 2010-05-13 | Murata Manufacturing Co., Ltd. | Elastic wave device and method of producing the same |
CN101765971A (zh) | 2007-07-30 | 2010-06-30 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
JP2010081086A (ja) | 2008-09-24 | 2010-04-08 | Murata Mfg Co Ltd | 弾性波装置及びその製造方法 |
JP2010106325A (ja) | 2008-10-30 | 2010-05-13 | Canon Inc | 成膜装置、露光装置、デバイス製造方法 |
JP2010252321A (ja) | 2009-03-27 | 2010-11-04 | Kyocera Corp | 弾性表面波装置及びその製造方法 |
Non-Patent Citations (2)
Title |
---|
Official Communication issued in corresponding Chinese Patent Application No. 201180053402.2, mailed on Oct. 10, 2014. |
Official Communication issued in International Patent Application No. PCT/JP2011/065654, mailed on Sep. 20, 2011. |
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US20130234558A1 (en) | 2013-09-12 |
CN103201866B (zh) | 2015-12-02 |
JP5182437B2 (ja) | 2013-04-17 |
JPWO2012063521A1 (ja) | 2014-05-12 |
WO2012063521A1 (fr) | 2012-05-18 |
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