TWI734359B - 用於製作光電半導體晶片的方法及其所使用的鍵合晶圓 - Google Patents

用於製作光電半導體晶片的方法及其所使用的鍵合晶圓 Download PDF

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Publication number: TWI734359B
Authority: TW; Taiwan
Prior art keywords: wafer; mother; optoelectronic semiconductor; manufacturing; daughter
Prior art date: 2019-04-19

Application number

TW109102559A

Other languages

English (en)

Chinese (zh)

Other versions

TW202039945A (zh

Inventor

謝斌暉

陳銘欣

蕭尊賀

鄭賢良

宋志棠

劉衛麗

Original Assignee

大陸商福建晶安光電有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-04-19

Filing date

2020-01-22

Publication date

2021-07-21

2020-01-22 Application filed by 大陸商福建晶安光電有限公司 filed Critical 大陸商福建晶安光電有限公司

2020-11-01 Publication of TW202039945A publication Critical patent/TW202039945A/zh

2021-07-21 Application granted granted Critical

2021-07-21 Publication of TWI734359B publication Critical patent/TWI734359B/zh

Links

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239000004065 semiconductor Substances 0.000 title claims abstract description 32
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230000008569 process Effects 0.000 claims abstract description 22
239000000758 substrate Substances 0.000 claims abstract description 16
229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
239000010980 sapphire Substances 0.000 claims abstract description 10
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 9
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 6
229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 6
235000012431 wafers Nutrition 0.000 claims description 236
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
230000004913 activation Effects 0.000 claims description 7
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
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238000005530 etching Methods 0.000 claims description 5
235000012239 silicon dioxide Nutrition 0.000 claims description 5
239000000377 silicon dioxide Substances 0.000 claims description 5
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
229910002601 GaN Inorganic materials 0.000 claims description 3
229910021529 ammonia Inorganic materials 0.000 claims description 3
239000000203 mixture Substances 0.000 claims description 3
239000003153 chemical reaction reagent Substances 0.000 claims description 2
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
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GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings

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Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Recrystallisation Techniques (AREA)
Led Devices (AREA)

TW109102559A 2019-04-19 2020-01-22 用於製作光電半導體晶片的方法及其所使用的鍵合晶圓 TWI734359B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
PCT/CN2019/083521 WO2020211089A1 (zh)	2019-04-19	2019-04-19	一种用于制作光电半导体芯片的方法及其所使用的键合晶圆
WOPCT/CN2019/083521		2019-04-19

Publications (2)

Publication Number	Publication Date
TW202039945A TW202039945A (zh)	2020-11-01
TWI734359B true TWI734359B (zh)	2021-07-21

Family

ID=70656854

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109102559A TWI734359B (zh)	2019-04-19	2020-01-22	用於製作光電半導體晶片的方法及其所使用的鍵合晶圓

Country Status (4)

Country	Link
KR (1)	KR20210120058A (ko)
CN (1)	CN111183513A (ko)
TW (1)	TWI734359B (ko)
WO (1)	WO2020211089A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN111952151A (zh) *	2020-07-28	2020-11-17	苏州赛万玉山智能科技有限公司	半导体复合晶圆及制造方法
KR102601702B1 (ko) *	2022-10-31	2023-11-13	웨이브로드 주식회사	반도체 성장용 템플릿을 이용한 반도체 발광 소자 제조 방법
KR102649711B1 (ko) *	2022-12-02	2024-03-20	웨이브로드 주식회사	초박형 반도체 다이의 제조 방법

Citations (3)

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TW200849337A (en) *	2007-06-06	2008-12-16	Soitec Silicon On Insulator	Process for fabricating a structure for epitaxy without an exclusion zone
TW201342494A (zh) *	2011-12-15	2013-10-16	Power Integrations Inc	用於半導體裝置的製造之合成晶圓
US9761493B2 (en) *	2014-01-24	2017-09-12	Rutgers, The State University Of New Jersey	Thin epitaxial silicon carbide wafer fabrication

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JP4126749B2 (ja) *	1998-04-22	2008-07-30	ソニー株式会社	半導体装置の製造方法
US6689669B2 (en) *	2001-11-03	2004-02-10	Kulite Semiconductor Products, Inc.	High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
KR100511656B1 (ko) *	2002-08-10	2005-09-07	주식회사 실트론	나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
KR20100033641A (ko) *	2008-09-22	2010-03-31	주식회사 동부하이텍	반도체 소자의 웨이퍼 재활용 방법
CN102486992A (zh) *	2010-12-01	2012-06-06	比亚迪股份有限公司	一种半导体器件的制造方法
CN102184882A (zh) *	2011-04-07	2011-09-14	中国科学院微电子研究所	一种形成复合功能材料结构的方法
CN102956762A (zh) *	2011-08-26	2013-03-06	郑朝元	Ⅲ-ⅴ族晶圆可重复进行磊晶制程的方法与构造

2019
- 2019-04-19 WO PCT/CN2019/083521 patent/WO2020211089A1/zh active Application Filing
- 2019-04-19 KR KR1020217027188A patent/KR20210120058A/ko not_active IP Right Cessation
- 2019-04-19 CN CN201980004714.0A patent/CN111183513A/zh active Pending
2020
- 2020-01-22 TW TW109102559A patent/TWI734359B/zh active

Patent Citations (3)

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Publication number	Priority date	Publication date	Assignee	Title
TW200849337A (en) *	2007-06-06	2008-12-16	Soitec Silicon On Insulator	Process for fabricating a structure for epitaxy without an exclusion zone
TW201342494A (zh) *	2011-12-15	2013-10-16	Power Integrations Inc	用於半導體裝置的製造之合成晶圓
US9761493B2 (en) *	2014-01-24	2017-09-12	Rutgers, The State University Of New Jersey	Thin epitaxial silicon carbide wafer fabrication

Also Published As

Publication number	Publication date
TW202039945A (zh)	2020-11-01
KR20210120058A (ko)	2021-10-06
WO2020211089A1 (zh)	2020-10-22
CN111183513A (zh)	2020-05-19

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TWI734359B (zh)	2021-07-21	用於製作光電半導體晶片的方法及其所使用的鍵合晶圓
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