CN111183513A - 一种用于制作光电半导体芯片的方法及其所使用的键合晶圆 - Google Patents
一种用于制作光电半导体芯片的方法及其所使用的键合晶圆 Download PDFInfo
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- CN111183513A CN111183513A CN201980004714.0A CN201980004714A CN111183513A CN 111183513 A CN111183513 A CN 111183513A CN 201980004714 A CN201980004714 A CN 201980004714A CN 111183513 A CN111183513 A CN 111183513A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000005693 optoelectronics Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 114
- 238000012545 processing Methods 0.000 abstract description 7
- 230000001066 destructive effect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/083521 WO2020211089A1 (zh) | 2019-04-19 | 2019-04-19 | 一种用于制作光电半导体芯片的方法及其所使用的键合晶圆 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111183513A true CN111183513A (zh) | 2020-05-19 |
Family
ID=70656854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980004714.0A Pending CN111183513A (zh) | 2019-04-19 | 2019-04-19 | 一种用于制作光电半导体芯片的方法及其所使用的键合晶圆 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20210120058A (ko) |
| CN (1) | CN111183513A (ko) |
| TW (1) | TWI734359B (ko) |
| WO (1) | WO2020211089A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952151A (zh) * | 2020-07-28 | 2020-11-17 | 苏州赛万玉山智能科技有限公司 | 半导体复合晶圆及制造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102601702B1 (ko) * | 2022-10-31 | 2023-11-13 | 웨이브로드 주식회사 | 반도체 성장용 템플릿을 이용한 반도체 발광 소자 제조 방법 |
| KR102649711B1 (ko) * | 2022-12-02 | 2024-03-20 | 웨이브로드 주식회사 | 초박형 반도체 다이의 제조 방법 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6281032B1 (en) * | 1998-04-22 | 2001-08-28 | Sony Corporation | Manufacturing method for nitride III-V compound semiconductor device using bonding |
| US20040029358A1 (en) * | 2002-08-10 | 2004-02-12 | Park Jea-Gun | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same |
| TW200849337A (en) * | 2007-06-06 | 2008-12-16 | Soitec Silicon On Insulator | Process for fabricating a structure for epitaxy without an exclusion zone |
| KR20100033641A (ko) * | 2008-09-22 | 2010-03-31 | 주식회사 동부하이텍 | 반도체 소자의 웨이퍼 재활용 방법 |
| CN102956762A (zh) * | 2011-08-26 | 2013-03-06 | 郑朝元 | Ⅲ-ⅴ族晶圆可重复进行磊晶制程的方法与构造 |
| CN103165625A (zh) * | 2011-12-15 | 2013-06-19 | 电力集成公司 | 用于制造半导体器件的复合晶圆 |
| US9761493B2 (en) * | 2014-01-24 | 2017-09-12 | Rutgers, The State University Of New Jersey | Thin epitaxial silicon carbide wafer fabrication |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6689669B2 (en) * | 2001-11-03 | 2004-02-10 | Kulite Semiconductor Products, Inc. | High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane |
| CN102486992A (zh) * | 2010-12-01 | 2012-06-06 | 比亚迪股份有限公司 | 一种半导体器件的制造方法 |
| CN102184882A (zh) * | 2011-04-07 | 2011-09-14 | 中国科学院微电子研究所 | 一种形成复合功能材料结构的方法 |
-
2019
- 2019-04-19 WO PCT/CN2019/083521 patent/WO2020211089A1/zh active Application Filing
- 2019-04-19 KR KR1020217027188A patent/KR20210120058A/ko not_active IP Right Cessation
- 2019-04-19 CN CN201980004714.0A patent/CN111183513A/zh active Pending
-
2020
- 2020-01-22 TW TW109102559A patent/TWI734359B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6281032B1 (en) * | 1998-04-22 | 2001-08-28 | Sony Corporation | Manufacturing method for nitride III-V compound semiconductor device using bonding |
| US20040029358A1 (en) * | 2002-08-10 | 2004-02-12 | Park Jea-Gun | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same |
| TW200849337A (en) * | 2007-06-06 | 2008-12-16 | Soitec Silicon On Insulator | Process for fabricating a structure for epitaxy without an exclusion zone |
| KR20100033641A (ko) * | 2008-09-22 | 2010-03-31 | 주식회사 동부하이텍 | 반도체 소자의 웨이퍼 재활용 방법 |
| CN102956762A (zh) * | 2011-08-26 | 2013-03-06 | 郑朝元 | Ⅲ-ⅴ族晶圆可重复进行磊晶制程的方法与构造 |
| CN103165625A (zh) * | 2011-12-15 | 2013-06-19 | 电力集成公司 | 用于制造半导体器件的复合晶圆 |
| US20130157440A1 (en) * | 2011-12-15 | 2013-06-20 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
| US9761493B2 (en) * | 2014-01-24 | 2017-09-12 | Rutgers, The State University Of New Jersey | Thin epitaxial silicon carbide wafer fabrication |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952151A (zh) * | 2020-07-28 | 2020-11-17 | 苏州赛万玉山智能科技有限公司 | 半导体复合晶圆及制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202039945A (zh) | 2020-11-01 |
| KR20210120058A (ko) | 2021-10-06 |
| WO2020211089A1 (zh) | 2020-10-22 |
| TWI734359B (zh) | 2021-07-21 |
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Application publication date: 20200519 |