TWI602874B - 液狀環氧樹脂組成物 - Google Patents
液狀環氧樹脂組成物 Download PDFInfo
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- TWI602874B TWI602874B TW102142788A TW102142788A TWI602874B TW I602874 B TWI602874 B TW I602874B TW 102142788 A TW102142788 A TW 102142788A TW 102142788 A TW102142788 A TW 102142788A TW I602874 B TWI602874 B TW I602874B
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- Prior art keywords
- resin composition
- component
- epoxy resin
- mass
- parts
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 28
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims description 21
- -1 amine compound Chemical class 0.000 claims description 22
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000011256 inorganic filler Substances 0.000 claims description 7
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 7
- 239000004848 polyfunctional curative Substances 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 5
- NHDIQVFFNDKAQU-UHFFFAOYSA-N tripropan-2-yl borate Chemical compound CC(C)OB(OC(C)C)OC(C)C NHDIQVFFNDKAQU-UHFFFAOYSA-N 0.000 claims description 4
- 239000011342 resin composition Substances 0.000 description 50
- 239000003822 epoxy resin Substances 0.000 description 26
- 229920000647 polyepoxide Polymers 0.000 description 26
- 239000007788 liquid Substances 0.000 description 18
- 229910000420 cerium oxide Inorganic materials 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000945 filler Substances 0.000 description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000004849 latent hardener Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- RNVCVTLRINQCPJ-UHFFFAOYSA-N o-toluidine Chemical compound CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- RBACIKXCRWGCBB-UHFFFAOYSA-N 1,2-Epoxybutane Chemical compound CCC1CO1 RBACIKXCRWGCBB-UHFFFAOYSA-N 0.000 description 1
- YQMXOIAIYXXXEE-UHFFFAOYSA-N 1-benzylpyrrolidin-3-ol Chemical compound C1C(O)CCN1CC1=CC=CC=C1 YQMXOIAIYXXXEE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- GHKSKVKCKMGRDU-UHFFFAOYSA-N 2-(3-aminopropylamino)ethanol Chemical compound NCCCNCCO GHKSKVKCKMGRDU-UHFFFAOYSA-N 0.000 description 1
- QIRNGVVZBINFMX-UHFFFAOYSA-N 2-allylphenol Chemical compound OC1=CC=CC=C1CC=C QIRNGVVZBINFMX-UHFFFAOYSA-N 0.000 description 1
- CUIODKLCVPKRIF-UHFFFAOYSA-N 2-butoxy-3-methyloxirane Chemical compound CCCCOC1OC1C CUIODKLCVPKRIF-UHFFFAOYSA-N 0.000 description 1
- WHNBDXQTMPYBAT-UHFFFAOYSA-N 2-butyloxirane Chemical compound CCCCC1CO1 WHNBDXQTMPYBAT-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- QUPKCFBHJFNUEW-UHFFFAOYSA-N 2-ethyl-4,5-dihydro-1h-imidazole Chemical compound CCC1=NCCN1 QUPKCFBHJFNUEW-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- NJWSNNWLBMSXQR-UHFFFAOYSA-N 2-hexyloxirane Chemical compound CCCCCCC1CO1 NJWSNNWLBMSXQR-UHFFFAOYSA-N 0.000 description 1
- VWSLLSXLURJCDF-UHFFFAOYSA-N 2-methyl-4,5-dihydro-1h-imidazole Chemical compound CC1=NCCN1 VWSLLSXLURJCDF-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 1
- QBSZKOXEASPZRG-UHFFFAOYSA-N C(=CC)OCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=CC)OCCCC(C(OC)(OC)OC)CCCCCCCC QBSZKOXEASPZRG-UHFFFAOYSA-N 0.000 description 1
- GOBRVYXHALJRKR-UHFFFAOYSA-N C(C)OC(OCC)(OCC)C(CC)SSSSC(CC)C(OCC)(OCC)OCC Chemical compound C(C)OC(OCC)(OCC)C(CC)SSSSC(CC)C(OCC)(OCC)OCC GOBRVYXHALJRKR-UHFFFAOYSA-N 0.000 description 1
- QUMXBKMUSJDYHP-UHFFFAOYSA-N CCC=COCCCC(C(OC)(OC)OC)(CCCCCCCC)C Chemical compound CCC=COCCCC(C(OC)(OC)OC)(CCCCCCCC)C QUMXBKMUSJDYHP-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- HDJGANPLOWXKTM-UHFFFAOYSA-N NC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound NC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC HDJGANPLOWXKTM-UHFFFAOYSA-N 0.000 description 1
- XJDCHDFUMGSEHD-UHFFFAOYSA-N NCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound NCCCC(C(OC)(OC)OC)CCCCCCCC XJDCHDFUMGSEHD-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000013006 addition curing Methods 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003273 ketjen black Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5046—Amines heterocyclic
- C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
- C08G59/5073—Amines heterocyclic containing only nitrogen as a heteroatom having two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/55—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Description
本發明係關於液狀環氧樹脂組成物,特別係關於一種以流動性優異、且線膨脹係數低為特徵之可使用來作為底部填充材(under fill)或電子零件用接著劑的液狀環氧樹脂組成物。
近年來,就可應付電子機器的配線等更進一步的高密度化、高頻化之半導體晶片封裝方式而言,係利用覆晶黏合(flip chip bonding)。於覆晶封裝係將半導體晶片與基板直接連接,故會有因矽晶片與基板之線膨脹係數不同所造成的應力,致於連接部有產生裂隙之虞,成為連接可靠性不良之原因。就其對策而言,係採用將所謂底部填充材之液狀密封材填充於半導體晶片與配線基板之間的技術。藉由使用底部填充材,可提高對於熱循環等熱應力之連接可靠性、及對於衝撃或撓曲等物理應力之連接可靠性。
其中,矽晶片之線膨脹係數為4ppm/℃,基板例如玻璃環氧基板之線膨脹係數為20ppm/℃。底部填充材一般係為吸收其線膨脹係數的差而混合無機填充劑,無
機填充劑通常係採用氧化矽(silica)。
而且,於底部填充材中,就可低溫硬化之樹脂而言係使用環氧-咪唑硬化系,但就降低上述底部填充材之線膨脹係數之目的,於前述樹脂系中添加氧化矽填充劑時,會有所謂底部填充材之流動性惡化之問題。此種流動性惡化之原因被認為係於底部填充材中的樹脂成分與氧化矽填充劑之分散狀態不均勻。
就改善此種添加氧化矽填充劑時之底部填充材的流動性惡化為目的而言,已報告有一種含有磷酸酯之密封用環氧樹脂組成物(專利文獻1、專利文獻2)。
[專利文獻1]日本特開2003-289123號公報
[專利文獻2]日本特開2011-246545號公報
然而,若於環氧樹脂組成物含有磷酸酯,會有環氧樹脂組成物在保存中的黏度上昇會變大,且適用期(pot life)變短之問題。關於添加有此種氧化矽填充劑之環氧樹脂組成物之適用期的問題,在使用來作為底部填充材用途以外之光半導體等電子零件用接著劑時亦會造成問題。
本發明之目的在於提供一種即使含有無機
填充劑,環氧樹脂組成物之流動性亦佳,且藉由抑制保存中的增黏而適用期長之液狀環氧樹脂組成物。
本發明係關於一種藉由具有以下構成而解決上述問題之液狀環氧樹脂組成物。
[1]一種液狀環氧樹脂組成物,其係包含:(A)液狀環氧樹脂、(B)胺化合物之環氧加成硬化劑或微膠囊化咪唑化合物硬化劑、(C)無機填充劑、(D)硼酸三異丙酯及(E)酚樹脂;相對於液狀環氧樹脂組成物:100質量份,(C)成分為20至65質量份,(D)成分為0.02至0.30質量份,(E)成分為0.3至15.0。
[2]一種底部填充材,其係包含上述[1]所述之液狀環氧樹脂組成物。
[3]一種接著劑,其係包含上述[1]所述之液狀環氧樹脂組成物。
[4]一種半導體裝置,其係包含上述[2]所述之底部填充材之硬化物。
[5]一種半導體裝置,其係包含上述[3]所述之接著劑之硬化物。
若依據本案[1]之發明,可提供一種即使含有無機填充劑,流動性亦佳,且藉由抑制保存中的增黏而適用期長之液狀環氧樹脂組成物。
若依據本案發明[4]及[5]之發明,藉由含有
無機填充劑之已硬化的環氧樹脂組成物適度的熱膨脹係數,可得到可靠性高之半導體裝置。
10、11‧‧‧樹脂組成物
20‧‧‧基板
30‧‧‧玻璃板
40‧‧‧間隙
第1圖(A)至第1圖(C)說明液狀環氧樹脂組成物的注入性評估方法之模式圖。
本發明之液狀環氧樹脂組成物(以下稱為樹脂組成物)係包含:(A)液狀環氧樹脂、(B)胺化合物之環氧加成硬化劑或微膠囊化咪唑化合物硬化劑、(C)無機填充劑、(D)硼酸三異丙酯及(E)酚樹脂;相對於液狀環氧樹脂組成物:100質量份,(C)成分為20至65質量份,(D)成分為0.02至0.30質量份,(E)成分為0.3至15.0質量份。
(A)成分係對樹脂組成物賦予接著性、硬化性,並對硬化後之樹脂組成物賦予耐久性、耐熱性。(A)成分係可列舉:液狀雙酚A型環氧樹脂、液狀雙酚F型環氧樹脂、液狀萘型環氧樹脂、液狀胺基酚型環氧樹脂、液狀氫化雙酚型環氧樹脂、液狀脂環式環氧樹脂、液狀醇醚型環氧樹脂、液狀環狀脂肪族型環氧樹脂、液狀茀型環氧樹脂、液狀矽氧烷系環氧樹脂等;從接著性、硬化性、耐久性、耐熱性之觀點來看,較佳為液狀雙酚A型環氧樹脂、液狀雙酚F型環氧樹脂、液狀萘型環氧樹脂。而且,從黏度調整之觀點來看,環氧當量較佳為80至250g/eq。市售
品可列舉:新日鐵化學製之雙酚F型環氧樹脂(品名:YDF8170)、DIC製之雙酚A型環氧樹脂(品名:EXA-850CRP)、新日鐵化學製之雙酚F型環氧樹脂(品名:YDF870GS)、DIC製之萘型環氧樹脂(品名:HP4032D)、三菱化學製之胺基酚型環氧樹脂(品級:JER630、JER630LSD)、Momentive Performance製之矽氧烷系環氧樹脂(品名:TSL9906)、新日鐵化學股份有限公司製之1,4-環己烷二甲醇二環氧丙基醚(品名:ZX1658GS)等。(A)成分可單獨使用,亦可將2種以上併用。
(B)成分係可以80至100℃左右的低溫硬化。(B)成分之胺化合物之環氧加成係藉由胺化合物與環氧樹脂之反應所合成之具有胺基的化合物。
胺化合物係只要於分子內具有1個以上可與環氧基進行加成反應之活性氫者即可,並無特別限定。胺化合物可列舉:二伸乙三胺、三伸乙四胺、正丙基胺、2-羥基乙基胺基丙基胺、環己胺、4,4’-二胺基-二環己基甲烷等脂肪族胺化合物;4,4’-二胺基二苯基甲烷、2-甲基苯胺等芳香族胺化合物;咪唑、2-甲基咪唑、2-乙基咪唑、2-異丙基咪唑等咪唑化合物;咪唑啉、2-甲基咪唑啉、2-乙基咪唑啉等咪唑啉化合物等。
環氧化合物可列舉:1,2-環氧丁烷、1,2-環氧己烷、1,2-環氧辛烷、氧化苯乙烯、正丁基環氧丙基醚、己基環氧丙基醚、苯基環氧丙基醚、環氧丙基乙酸酯等。
從存安定性之觀點來看,(B)成分之微膠囊
化咪唑化合物硬化劑,較佳為經胺酯(urethane)樹脂等微膠囊化之咪唑化合物硬化促進劑,從作業性、硬化速度、保存安定性之觀點來看,較佳為分散於液狀雙酚A型等液狀環氧樹脂且經母料(Master Batch)化之膠囊化咪唑化合物硬化促進劑。咪唑硬化劑可列舉:2-甲基咪唑、2-十一基咪唑、2-十七基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]乙基-均三、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯并[1,2-a]苯並咪唑等;從硬化速度、作業性、耐溼性之觀點來看,較佳為2,4-二胺基-6-[2’-甲基咪唑基-(1’)]乙基-均三、2,4-二胺基-6-[2’-十一基咪唑基-(1)-乙基-均三、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-均三等。
(B)成分之市售品可列舉:AJINOMOTO Fine-Techno製之胺加成系潛在性硬化劑(品名:AJICURE PN-23、AJICURE PN-40)、T & K TOKA製之潛在性硬化劑(品名:FUJICURE FX-1000)、旭化成E-materials製之微膠囊化咪唑化合物潛在性硬化劑(製品名:NOVACUREHX 3941 HP、NOVACUREHX3088、NOVACUREHX3722)。(B)成分可單獨使用,亦可將2種以上併用。
藉(C)成分,可控制樹脂組成物之線膨脹係數。(C)成分可列舉:膠質氧化矽(colloidal silica)、疏水性氧化矽、微細氧化矽、奈米氧化矽等氧化矽填充劑;丙烯酸珠粒、玻璃珠粒、胺酯珠粒、膨土、乙炔黑(acetylene
black)、科琴黑(Ketjen black)等。而且,(C)成分之平均粒徑(非粒狀時為其平均最大徑)並無特別限定,但,能使充填劑均勻地分散於樹脂組成物中,以0.01至50μm為較佳,而且從使用樹脂組成物作為底部填充材時之注入性優異等理由,以0.01至50μm為較佳。若未達0.01μm,樹脂組成物之黏度會上昇,而有在使用來作為底部填充材時注入性惡化之虞。若超過50μm,有難以使充填劑均勻地分散於樹脂組成物中之虞。又,從保護銅製線(wire),免於受到硬化後之樹脂組成物之熱應力之觀點來看,(C)成分之平均粒徑更佳為0.6至10μm。市售品可列舉:Admatechs製之高純度合成球狀氧化矽(品名:SO-E5,平均粒徑:2μm;品名:SE-2300,平均粒徑:0.6μm)、龍森製之氧化矽(品名:FB7SDX,平均粒徑:10μm)、Micron製之氧化矽(品名:TS-10-034P、平均粒徑:20μm)等。其中,充填劑之平均粒徑係藉由動態光散射式奈米顆粒粒度分析計進行測定。(C)成分係可單獨使用,亦可將2種以上併用。
(D)成分為以化學式(1)所示之硼酸三異丙酯:
可提高樹脂組成物中之樹脂成分與氧化矽
填充劑之潤濕性,並改善樹脂成分與氧化矽填充劑之分散狀態,且可抑制液狀環氧樹脂組成物於保存中之增黏,並延長適用期。就(D)成分而言,例如只要使用和光純藥工業所販售之試藥即可。
(E)成分係抑制環氧樹脂組成物於保存中的增黏。使用來作為(E)成分之酚樹脂,係藉由於樹脂組成物中含有特定量而作用為硬化遅延劑。酚樹脂可列舉:酚酚醛清漆(Phenol Novolac)、甲酚酚醛清漆(Cresol Novolak)、烯丙基酚(allylphenol)等。因酚酚醛清漆於20℃為液狀,故為較佳。市售品可列舉明和化成製之酚酚醛清漆(品名:MEH8005)。
(B)成分從良好的反應性、可靠性之觀點來看,較佳係相對於樹脂組成物:100質量份,為5至35質量份,更佳為7至30質量份。
(C)成分相對於樹脂組成物:100質量份,係含有20至65質量份,較佳為30至60質量份,更佳為30至40質量份。若為30至40質量份,線膨脹係數會下降,且可避免注入性惡化。
而且,(C)成分相對於樹脂組成物之硬化物:100質量份,係含有20至65質量份,較佳為30至60質量份,更佳為30至40質量份。其中,樹脂組成物在硬化時減少之質量約少至1至2質量%,故硬化物中較佳之(C)成分含量係與樹脂組成物中之含量相同。其中,(C)成分之定量分析係以質量分析法進行。
(D)成分相對於樹脂組成物:100質量份,係0.02至0.30質量份,較佳為0.02至0.15質量份,更佳為0.02至0.06質量份。若為0.02質量份以上,注入性良好,若為0.30質量份以下,硬化後之樹脂組成物之強度充分。
又,(D)成分相對於樹脂組成物之硬化物:100質量份,係0.02至0.30質量份,較佳為0.02至0.15質量份,更佳為0.02至0.06質量份。其中,(D)成分之定量分析係以質量分析法進行。
(E)成分相對於樹脂組成物:100質量份,較佳為0.3至15.0質量份。(E)成分未達0.3質量份時,硬化後之樹脂組成物會產生色斑等外觀不良,若超過15質量份,硬化性會降低,於所需時間硬化會不充分,故硬化後之樹脂組成物的強度降低。
而且,(E)成分相對於樹脂組成物之硬化物:100質量份,較佳為0.3至15.0質量份。其中,(E)成分之定量分析係以質量分析法進行。
從密著性之觀點來看,樹脂組成物較佳係進一步含有(F)成分之偶合劑,(F)成分可列舉:3-環氧丙氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、乙烯基三甲氧基矽烷、對-苯乙烯基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、雙(三乙氧基矽基丙基)四硫醚、3-異氰酸酯丙基三乙
氧基矽烷等;從密著性之觀點來看,較佳為3-環氧丙氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷。市售品可列舉:信越化學工業製之KBM403、KBE903、KBE9103等。(F)成分係可單獨使用,亦可將2種以上併用。
(F)成分相對於樹脂組成物:100質量份,較佳為含有0.05至15質量份,更佳為0.1至10質量份。若為0.05質量份以上,密著性會提高,若為15質量份以下,樹脂組成物之發泡會受到抑制。
本發明之樹脂組成物中,可於不損及本發明目的之範圍,進一步視所需而調配流平劑、著色劑、離子捕集劑、消泡劑、耐燃劑、其他的添加劑等。
本發明之樹脂組成物係例如可一邊將(A)成分至(E)成分及其他添加劑等同時或各別地視需要而一邊加熱處理,一邊攪拌、熔融、混合、分散而得到。該等之混合、攪拌、分散等裝置並無特別限定,但可使用具備攪拌、加熱裝置之擂潰機、3輥研磨機、球磨機、行星式攪拌機、珠磨機等。而且,亦可將此等裝置適當組合而使用。
從注入性之觀點來看,本發明之樹脂組成物較佳係於溫度:25℃之黏度為1000至80000mPa‧s。其中,黏度係以東機產業公司製之E型黏度計(型號:TVE-22H)測定。
本發明之樹脂組成物係藉由點膠機(dispenser)、印刷等形成/塗佈於基板或光半導體等電子零件所期望的位置。其中,使用樹脂組成物作為底部填充材
時,係於可撓性配線基板等基板與半導體元件之間,以至少一部分接於基板的配線上之方式形成。
本發明之樹脂組成物之硬化,較佳為80至300℃,而且,從提高生產性之觀點來看,較佳為於200秒內硬化。
本發明之樹脂組成物適宜作為底部填充材或光半導體等電子零件用之接著劑。而且,包含底部填充材之硬化物或接著劑之硬化物之半導體裝置,係因無機填充劑被均勻地分散,故可靠性高。
本發明係藉由實施例進行說明,惟本發明並不限定於該等實施例。又,在以下之實施例中,若無特別聲明,份、%即表示質量份、質量%。
[實施例1至17、比較例1至20]
以表1至表4所示之調配製作樹脂組成物,所製作之樹脂組成物皆為液狀。
[黏度之評估]
使用東機產業公司製之E型黏度計(型號:TVE-22H),以每分鐘旋轉10次之條件測定所製作後之樹脂組成物的黏度(以下稱為初期黏度。單位:mPa‧s)。初期黏度較佳為1000至80000mPa‧s,更佳為1000至8000mPa‧s。而且,亦同樣地測定使樹脂組成物於25℃保持48小時後之黏度,算出黏度增加率(單位:%)。此處,黏度增加率係以下述式算出:
黏度增加率=[(48小時後之黏度)-(初期黏度)]/(初期黏度)×100。測定結果係表示於表1至表4。
[搖變指數之評估]
使用東機產業公司製之E型黏度計(型號:TVE-22H)而測定樹脂組成物之搖變指數。搖變指數係將於每分鐘旋轉1次之條件所求得之測定值除以於每分鐘旋轉10次之條件所求得之測定值的比率,亦即,由(每分鐘旋轉1次之黏度)/(每分鐘旋轉10次之黏度)求得。搖變指數之合適範圍係0.8至1.0。測定結果係表示於表1至表4。
[樹脂組成物之注入性之評估]
第1圖係表示說明樹脂組成物之注入性的評估方法之示意圖。首先,如第1圖(A)所示,於基板20上設置50μm之間隙40,製作已固定玻璃板30之試驗片代替半導體元件。惟,基板20係使用FR4基板。其次,將該試驗片置於設定在50℃之加熱板上,如第1圖(B)所示,於玻璃板30之一端側塗佈所製作之樹脂組成物10,而如第1圖(C)所示,測定間隙40被樹脂組成物11填滿為止之時間。注入時間之合適範圍為1000秒以內。表1至表4表示注入性之評估結果。
[硬化物外觀]
將已評估樹脂組成物的注入性之試驗片放入烘箱,以120℃加熱3分鐘,並使環氧樹脂組成物硬化。目視觀察加熱後之硬化物外觀。於硬化物未看到皺褶/橘皮狀等外觀不
良或色斑時為○,於硬化物可看到皺褶/橘皮狀等外觀不良或色斑時為×。硬化物外觀之評估結果表示於表1至表4。
[硬化之樹脂組成物之強度評估]
於玻璃環氧基板上印刷評估用試料,並於該試料上載置2mm×2mm之矽晶片。再以80±2℃之熱風乾燥機加熱硬化90分鐘,或以100±2℃之熱風乾燥機加熱硬化90分鐘。以此作為試驗片,使用dage公司製之萬能型黏結強度試驗機(型號:DAGE4000)而對矽晶片施加荷重,測定晶片剝離時的強度(剝離強度)。n=10,並以其平均值作為強度。又,未達100N時設為未硬化。強度之評估結果係表示於表1至表4。
從表1至表3可知,實施例1至17的初期黏度全部皆於可使用之範圍內,48小時後之黏度增加率亦為4.3%以下。搖變指數也於所期望之範圍內,注入時間亦於所期望之範圍內。而且,以100℃硬化,硬化後樹脂組成物的強度亦良好。尤其,(D)成分為0.02至0.12質量份之實施例1至4、7至17,於80℃之低溫也會硬化。相對於此,未含(D)成分之比較例1係搖變指數高,注入試驗在中途完全結束。(D)成分過少之比較例2係搖變指數高。再者,(D)成分過多之比較例3係即使於100℃、90分鐘亦未硬化。(C)成分過多之比較例4係黏度過高而無法測定。未含(B)成分之比較例5係於增黏試驗中固化。(E)成分過少之比較例6係因色斑導致外觀不良。(E)成分為過多之比較例7係初期黏度高,而黏度增加率高,於80℃、90分鐘未硬化。使用碳數與(D)成分相異之硼酸三-正十六酯之比較例8至12皆為搖變指數高,注入試驗於中途完全結束。從表4可知,使用四-正丁基鏻苯并***鹽取代(D)成分之比較例13至17,皆為黏度增加率過高。再者,比較例13係搖變指數高,注入試驗於中途完全結束。使用取代(B)成分之硬化劑的比較例18、20為黏度增加率過高,且即使於100℃×90分鐘亦未硬化。(E)成分過多之比較例19亦為黏度增加率過高,且即使於100℃×90分鐘亦未硬化。
如上所述,本發明之樹脂組成物即使含有無機填充劑,流動性亦佳,且可抑制樹脂組成物保存時的增黏,並延長適用期。
本案圖式係說明樹脂組成物之注入性的評估方法之模式圖,不足以代表本案技術特徵。
故本案無指定代表圖。
Claims (5)
- 一種液狀環氧樹脂組成物,其係包含:(A)液狀環氧樹脂、(B)胺化合物之環氧加成硬化劑或微膠囊化咪唑化合物硬化劑、(C)無機填充劑、(D)硼酸三異丙酯及(E)酚樹脂;相對於液狀環氧樹脂組成物:100質量份,(C)成分為20至65質量份,(D)成分為0.02至0.30質量份,(E)成分為0.3至15.0質量份。
- 一種底部填充材,其係包含申請專利範圍第1項所述之液狀環氧樹脂組成物。
- 一種接著劑,其係包含申請專利範圍第1項所述之液狀環氧樹脂組成物。
- 一種半導體裝置,其係包含申請專利範圍第2項所述之底部填充材之硬化物。
- 一種半導體裝置,其係包含申請專利範圍第3項所述之接著劑的硬化物。
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