TWI584703B - 顯示模組基板及其製造方法 - Google Patents

顯示模組基板及其製造方法 Download PDF

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TWI584703B
TWI584703B TW103129045A TW103129045A TWI584703B TW I584703 B TWI584703 B TW I584703B TW 103129045 A TW103129045 A TW 103129045A TW 103129045 A TW103129045 A TW 103129045A TW I584703 B TWI584703 B TW I584703B
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display module
substrate body
substrate
air holes
signal circuit
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TW201608941A (zh
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林佳樺
蔡志鴻
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友達光電股份有限公司
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Priority to TW103129045A priority Critical patent/TWI584703B/zh
Priority to CN201410673729.5A priority patent/CN104392675B/zh
Priority to US14/823,127 priority patent/US9596732B2/en
Publication of TW201608941A publication Critical patent/TW201608941A/zh
Priority to US15/421,337 priority patent/US9887215B2/en
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    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133514—Colour filters
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
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Description

顯示模組基板及其製造方法
本發明係有關於一種顯示模組基板；具體而言，本發明係有關於一種薄型顯示模組基板。
顯示裝置廣泛應用在電腦、電視、通訊裝置等各種電子產品中，並隨產業技術的進步以及生活需求而有輕薄化及輕量化的趨勢。除了通常具有的平面結構外，現今的顯示面板更可具有彎曲或可撓的形態，以配合多樣之顯示器的設計或開發顯示器之應用。其中顯示器本身可即是主角，而附加有文書處理、通訊、以及資料儲存等功能。
就可撓性顯示面板/顯示器之製造而言，一般先形成或裁切軟性可撓基材(利用塗佈方式製作可撓式基材於整板玻璃上，無須裁切)，再於其上設置電路、發光材料、及/或光源等元件。然而，單是可撓性基材本身可能因其材料特性而不適於製程中的高溫步驟，因此通常需輔以非軟性之板材作為軟性可撓基板的載板。之後待製程完成後，再以高能量雷射進行軟性可撓基材與載板之離型。然而，離型過程中伴隨高能量雷射而來的熱效應及氣體生成會使基材產生形變。此形變改變扇出區(fan-out area)焊墊的間距，增加後續製程的難度。
本發明之目的在於提供一種顯示模組基板，具有較低之形變量。
本發明之目的在於提供一種顯示模組基板製造方法，可改善 成品之形變量，提高成品良率。
本發明之顯示模組基板包含一基板本體及複數訊號線路。該基板本體具有一承載面。該承載面包含一可視區及位於該可視區一側之一訊號電路區。該些訊號線路設置於該承載面上，並位於該訊號電路區。該訊號電路區形成有複數氣孔貫穿該基板本體，且該些氣孔不為該些訊號線路所遮蔽。
本發明之顯示模組基板製造方法，包含步驟(a)將一基板本體設置於一透光載板上；其中，該基板本體具有相對的一底面及一承載面，該底面係貼附該透光載板，該承載面包含一可視區及位於該可視區一側之一訊號電路區；步驟(b)於該訊號電路區上設置複數訊號線路；步驟(c)於該訊號電路區形成複數氣孔貫穿該基板本體，且該些氣孔不為該些訊號線路所遮蔽；步驟(d)以高能量光線透過該透光載板蝕刻該底面，使該基板本體與該透光載板分離。
〔本發明〕
10‧‧‧顯示模組基板
100‧‧‧基板本體
150‧‧‧承載面
160‧‧‧底面
200‧‧‧可視區
300‧‧‧訊號電路區
350‧‧‧訊號線路
360‧‧‧氣孔
380‧‧‧焊墊
400‧‧‧透光載板
500‧‧‧犧牲層
610‧‧‧薄膜電晶體陣列
620‧‧‧有機膜層
630‧‧‧包覆層
S‧‧‧刻痕
D‧‧‧間距
W‧‧‧直徑
P‧‧‧氣體
A‧‧‧空間
圖1所示為本發明顯示模組基板實施例之俯視圖；圖2所示為圖1所示實施例之部分立體圖；圖3所示為圖2所示實施例沿AA之部分剖視示意圖；圖4所示為本發明顯示模組基板實施例之仰視圖；圖5所示為本發明顯示模組基板製造方法之流程圖；圖6~7所示為本發明顯示模組基板製造流程之示意圖。
本發明之顯示模組基板，如圖1~2所示，包含基板本體100及複數訊號線路350。該基板本體100具有承載面150，且該些訊號線路係設置於承載面150。反之，基板本體100相對於承載面150的一側另有底面160。詳細來說，基板本體100可為塑性材料，且較佳為軟性並可撓；以較佳實施 例而言，基板本體100可以是塑膠薄膜之型態。基板本體的材料例如為聚醯亞胺(Polyimide，PI)。此外，顯示模組基板10可以是例如液晶顯示器(LCD)顯示模組之基板、有機發光顯示器(OLED)之基板，但不限於此。
基板本體100之承載面150包含可視區200及訊號電路區300，其中訊號電路區300可至少部分為扇出區(fan-out area)及/或晶片接合區(IC bonding)。晶片設置於扇出區的方式包含COG(chip on glass)、COF(chip on film)等各種方式。前述複數訊號線路350係位於訊號電路區300。較佳而言，複數訊號線路350於訊號電路區300形成至少一叢集。以圖1~2所示實施例為例，複數訊號線路350於訊號電路區300形成五個叢集，並於各叢集內以特定形態分布。叢集內之多條訊號線路350例如係朝向接點/焊墊380延伸同時收斂而構成似梯形或似扇形之線路叢集。
訊號電路區300可依傍於可視區200之一側，且通常沿可視區200之側邊分布。在其他實施例中，可視區200亦可能不僅一側有訊號電路區300。
承載面150之可視區200進一步包含電極及/或驅動元件如薄膜電晶體(TFT)、液晶、發光材料，及/或彩色濾光片。訊號電路區300的訊號電路350可與可視區200的電極及/或驅動元件電連接；此外，顯示模組的驅動電路如驅動晶片(IC)可接合於基板本體100上訊號電路區300之訊號電路350。
訊號電路區300進一步形成複數貫穿基板本體100之氣孔360，如圖3~4所示。換句話說，氣孔360開口於承載面150及底面160，且較佳具有5~100微米(μm)的深度，而與基板本體100之厚度大致相當。其中，可以例如雷射切割或沖壓(punch)等鑽孔技術於基板本體100形成孔直徑W較佳不小於1微米，及/或形成孔間距D較佳不小於1微米的多個氣孔360。另一方面，該些氣孔360係不為訊號電路區300之訊號線路350遮蔽，例如可形成於相鄰訊號線路350之間。在本發明實施例中，該些氣孔360中至少部分 氣孔360位於相鄰訊號線路350之間。當複數訊號線路350於訊號電路區300形成如上述叢集，例如為扇形之線路叢集，該些分布於叢集內相鄰訊號線路350間的氣孔360亦可能呈現扇形分布。
如上述，基板本體100相對於承載面150的一側另有底面160。較佳而言，底面160進一步形成有刻痕S。該些刻痕S可為高能量光線如雷射光造成之刻痕。再者，該些刻痕S較佳分布於底面160之一部分，且該部分底面160與對側承載面150之訊號電路區300對應。貫穿基板本體100、且開口於承載面150及底面160的氣孔360進一步開口於承載面150的訊號電路區300以及底面160上與訊號電路區300對應之該部分。該些氣孔360在底面上的開口係為刻痕S所圍繞。
在本發明實施例中，氣孔360及刻痕S可為顯示模組基板10成形過程中所形成、或遺留下來。進一步而言，氣孔360為顯示模組基板10於離型製程所需要的結構，其功能在於做為氣體逸散之通道。刻痕S則係離型製程中，以高能雷射光進行離型造成之痕跡。以下進一步介紹顯示模組基板10的製造方法。
如圖5所示實施例，本發明顯示模組基板10之製造方法可包含步驟510，將一基板本體設置於一透光載板上；其中，該基板本體具有相對的一底面及一承載面，該底面係貼附該透光載板，該承載面包含一可視區及位於該可視區一側之一訊號電路區。
由於顯示模組基板10之基板本體100為軟性且通常不耐高溫，一載板係提供來協助進行顯示模組基板10之製造。該載板較佳透光，例如為玻璃載板；離型製程中並得以使用光能。此外，基板本體100更可直接形成於該載板，如圖6所示之透光載板400。舉例來說，可於透光載板400塗佈基板本體100之材料而成形之。
成形之基板本體100係有底面160以及朝外之一面。底面160貼附於透光載板400之表面，朝外之該面作為承載面150，如圖6(b)所示。承 載面150係有所區分，且較佳至少區分有可視區200及訊號電路區300。
另一方面，步驟510較佳再包含於透光載板上設置犧牲層500(請參考圖7)或阻水層。犧牲層可直接形成於透光載板，例如於透光載板上塗佈犧牲層之材料，如無機材料而成形之。犧牲層設置於基板本體及透光載板之間；換句話說，在設置完犧牲層之後，設置基板本體於犧牲層上，較佳並以其相對兩面分別貼觸透光載板及基板本體。犧牲層可以是離型製程的一種消耗品，緩解基板本體於離型製程中的損失。
本發明顯示模組基板10之製造方法再包含步驟520，於該訊號電路區上設置複數訊號線路。
較佳而言，步驟520進一步包含於承載面150形成電極及/或驅動元件。在本發明較佳實施例中，如圖6(c)所示，係於承載面150形成薄膜電晶體陣列610，其中包含進一步將薄膜電晶體陣列610之多個訊號線路設置於訊號電路區300。較佳而言，複數訊號線路350於訊號電路區300形成至少一叢集。複數訊號線路350並於該至少一叢集內以特定形態分布，例如朝向接點/焊墊380延伸同時收斂而構成似梯形或似扇形之線路叢集。
此外，本發明顯示模組基板10之製造方法可再包含於承載面150設置例如液晶、發光材料、濾光片，及/或包覆層。以圖3所示實施例為例，在本發明較佳實施例中，係於承載面150進一步設置有機發光材料，例如以氣或液相沉積、塗佈等方式形成有機膜層620；此外，較佳於有機膜層以外形成包覆層630(thin film encapsulation)。如此製成之顯示模組基板10係可作為有機發光顯示器(OLED)之基板。
本發明顯示模組基板10之製造方法再包含步驟530，於該訊號電路區形成複數氣孔貫穿或幾乎貫穿該基板本體，且該些氣孔不為該些訊號線路所遮蔽。當基板本體及透光載板之間設置有犧牲層，該些氣孔較佳進一步貫穿犧牲層。其中，可以例如雷射切割或沖壓(punch)等鑽孔技術於基板本體100形成孔直徑較佳不小於1微米，及/或形成孔間距較佳不小於1 微米的多個氣孔360。以圖6所示實施例為例，步驟530係自基板本體100背向透光載板400之一側，即承載面150進行鑽孔。進一步而言，鑽孔係於承載面150之訊號電路區300進行(也可從玻璃背面鑽孔)，且避開該些訊號線路350，並較佳作用及於承載面150與基板本體100之界面，確保貫穿基板本體100之氣孔360的形成。氣孔360可位於相鄰訊號線路350間之間隙。當複數訊號線路350於訊號電路區300形成叢集，例如為扇形之線路叢集，形成其間的氣孔360亦可能隨之呈現扇形分布。
本發明顯示模組基板10之製造方法再包含步驟540，以高能量光線透過該透光載板蝕刻該底面，使該基板本體與該透光載板分離。步驟540又可稱為離型製程。在本發明較佳實施例中，該高能光線可為雷射光，例如紫外線雷射光。請同時參考圖6(e)及圖7，高能光線E可自透光載板400背向基板本體100之一側入射透光載板400。高能光線E之能量可穿入透光載板400，且較佳抵達透光載板400與基板本體100之界面。
進一步而言，高能光線E可入射至少部分之透光載板400，且該部分透光載板400上的基板本體100部分的對側包含承載面150之訊號電路區300。因此，高能光線E穿入透光載板400，且能抵達訊號電路區300對側之底面160部分。高能光線E可分解、或破壞基板本體100與透光載板400貼合之底面160，解除基板本體100與透光載板400的貼合，使兩者得相分離；此過程亦通常伴隨熱及氣體P的產生。此外，高能量亦可能於底面160因其掃描路徑產生刻痕。
產生之氣體P可來自於基板本體100之分解、及/或汽化，且例如為碳族類之氣體分子。該氣體P先發生於基板本體100及透光載板400之間，且得經氣孔360逸散離開基板本體100與透光載板400之間的空間A。基板本體100，尤其是具有訊號電路區300的部分因此較難因小空間A內氣體P及熱之加乘效果發生形變。具體而言，該形變例如為基板本體100受到來自透光載板400方向之壓力及熱力產生的膨脹形變。
另一方面，當基板本體及透光載板之間設置有犧牲層，高能光線E可自透光載板400背向犧牲層500之一側入射透光載板400。高能光線E之能量可穿入透光載板400，且較佳抵達透光載板400與犧牲層500之界面。高能光線E可分解或破壞犧牲層500，從而解除基板本體100與透光載板400的連接，使兩者得相分離。藉此並緩解基板本體100於離型製程中的損失。
相較於習知訊號電路區300上焊墊間之間距(pitch)因基板本體100形變所造成的變異量，基板本體100的氣孔360將該變異量減小(因尺寸同會使該數值變動)。本發明離型製程對於基板本體100及其上元件的改善，改善其後製程的困難度，並提升顯示模組基板成品的良率。
另一方面，在本發明較佳實施例中，高能光線E可於訊號電路區300之延伸方向(即其長邊)入射透光載板400而使該延伸方向上的基板本體100部分同時與透光載板400發生分離。此外，雷射光可同時於訊號電路區300之寬邊方向上進行掃描。依循雷射光之走向，如圖7所示，基板本體100於訊號電路區300的部分大致依訊號電路區300的寬邊方向分離。
如圖4所示，高能光線E蝕刻的刻痕S於底面160圍繞著氣孔360，其中底面160有刻痕S的部分反映高能光線E係作用於該處。因此，高能光線E係作用於氣孔360附近、氣孔360周圍之基板本體100部分，使得該部分之基板本體100汽化產生之氣體分子得經由氣孔360逸散出來。
如圖6(f)所示，在步驟540之後，基板本體100可輕易與透光載板400分離，完成顯示模組基板10之製造。或者，在步驟540之後，舉例來說，可於基板本體100/顯示模組基板10進行驅動電路之設置。
本發明已由上述相關實施例加以描述，然而上述實施例僅為實施本發明之範例。必需指出的是，已揭露之實施例並未限制本發明之範圍。相反地，包含於申請專利範圍之精神及範圍之修改及均等設置均包含於本發明之範圍內。
10‧‧‧顯示模組基板
100‧‧‧基板本體
200‧‧‧可視區
300‧‧‧訊號電路區
350‧‧‧訊號線路
360‧‧‧氣孔
380‧‧‧焊墊

Claims (10)

  1. 一種顯示模組基板，包含：一基板本體，具有一承載面；其中，該承載面包含一可視區及位於該可視區一側之一訊號電路區；以及複數訊號線路，設置於該承載面上，並位於該訊號電路區；其中，該訊號電路區形成有複數氣孔貫穿該基板本體，且該些氣孔之至少部分位於相鄰之該些訊號線路之間且沿該複數訊號線路之延伸方向分佈。
  2. 如請求項1所述之顯示模組基板，其中該些訊號線路係成扇形排列，位於該些訊號線路間之該些氣孔亦形成扇形分佈。
  3. 如請求項1所述之顯示模組基板，其中該基板本體具有與該承載面相對之一底面，該底面上分佈有高能量光線蝕刻的刻痕。
  4. 如請求項1所述之顯示模組基板，其中該些氣孔於該底面上之開口係為該些刻痕所圍繞。
  5. 如請求項1所述之顯示模組基板，其中該些氣孔的孔直徑不小於1μm。
  6. 如請求項1所述之顯示模組基板，其中該些氣孔間之間距不小於1μm。
  7. 一種顯示模組基板製造方法，包含下列步驟：(a)將一基板本體設置於一透光載板上；其中，該基板本體具有相對的一底面及一承載面，該底面係貼附該透光載板，該承載面包含一可視區及位於該可視區一側之一訊號電路區；(b)於該訊號電路區上設置複數訊號線路；(c)於該訊號電路區形成複數氣孔貫穿該基板本體，且該些氣孔不為該些訊號線路所遮蔽；(d)以高能量光線透過該透光載板蝕刻該底面，使該基板本體與該透光載板分離。
  8. 如請求項7所述之顯示模組基板製造方法，進一步包含：(e)於該基板本體與該透光載板分離後，於該訊號電路區設置驅動電路。
  9. 如請求項8所述之顯示模組製造基板方法，其中步驟(c)包含形成至少部分該些氣孔於該些訊號線之間。
  10. 如請求項7所述之顯示模組基板製造方法，進一步包含將一犧牲層設置於該透光載板上，以及將該基板本體設置於設置有該犧牲層的該透光載板上。
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