TWI518405B - 顯示面板及其製作方法 - Google Patents
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Description
本發明是有關於一種顯示面板及其製造方法,且特別是有關於一種可撓式顯示面板及其製造方法。
隨著顯示技術的突飛猛進,顯示器已從早期的陰極射線管(cathode ray tube,CRT)顯示器逐漸地發展到目前的平面顯示器(flat panel display,FPD)。相較於硬質載板(諸如玻璃基板)所構成的平面顯示器,可撓性基板(諸如塑膠基板)具有可撓曲及耐衝擊等特性。因此,近年來已著手研究將主動元件製作於可撓式基板上的可撓式顯示器。
一般而言,可撓式顯示面板的製作方式是先將可撓式基板透過離型介面固定在玻璃基板上。之後,再於可撓式基板上進行顯示元件的製作程序。待完成顯示元件的製作後,透過從玻璃基板的背部照射紫外光(UV)或加熱處理的方式,弱化離型介面與可撓式基板之間的結合力,從而將可撓式基板自玻璃基板取下。然而,若是於上述取下可撓式基板之前即完成晶片接合(IC
bonding),則硬質的IC會造成應力集中而增加離型力,以致於取下可撓式基板的過程中可能會對可撓式基板上之薄膜造成破壞。
本發明提供一種顯示面板及其製造方法,可以降低取下可撓式基板時的離型力,進而提高取下可撓式基板的成功率。
本發明提供一種顯示面板,其包括基板、畫素陣列、周邊電路以及保護層。基板包括顯示區以及非顯示區。畫素陣列位於基板之顯示區中。周邊電路位於非顯示區中。保護層位於顯示區以及非顯示區且覆蓋周邊電路以及畫素陣列,其中非顯示區之保護層具有多個開孔以暴露出基板,且上述開孔的孔徑介於1μm至1mm之間,該些開孔的間距介於10μm至1cm之間。
本發明還提供一種顯示面板的製造方法,其包括下列步驟:在支撐基板上依序形成膠材層以及基板,其中基板具有顯示區以及非顯示區;在基板之顯示區中形成畫素陣列,且於基板之非顯示區中形成周邊電路,且周邊電路與畫素陣列電性連接;在基板上形成保護層,覆蓋周邊電路以及畫素陣列;在非顯示區之保護層中形成多個開孔,以暴露出基板;通入氣體並對膠材進行處理程序,以使膠材層與基板之間的黏著力降低,其中氣體經由上述開孔通入基板並且擴散至膠材層;以及使基板與膠材層分離。
基於上述,本發明的顯示面板於非顯示區之保護層具有多個開孔,可以大幅降低取下可撓式基板時的離型力,提高取下
可撓式基板的成功率,進而增加顯示面板產品的良率。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100、200‧‧‧顯示面板
110‧‧‧支撐基板
120‧‧‧膠材層
130‧‧‧基板
140‧‧‧緩衝層
150‧‧‧保護層
160‧‧‧開孔
C‧‧‧導電元件
d1‧‧‧孔徑
d2‧‧‧間距
G‧‧‧氣體
I-I’‧‧‧線
IC‧‧‧晶片
L‧‧‧光
PX‧‧‧畫素結構
R1‧‧‧顯示區
R2‧‧‧非顯示區
S‧‧‧周邊電路
圖1是根據本發明之一實施例的顯示面板的上視示意圖。
圖2是圖1之顯示面板之R區的放大示意圖。
圖3是根據本發明之另一實施例的顯示面板的上視示意圖。
圖4A至圖4I是沿圖1的顯示面板之線I-I’所繪示的本發明之一實施例的顯示面板的製程剖面圖。
圖1是根據本發明之一實施例的顯示面板的上視示意圖。圖2是圖1之顯示面板之R區的放大示意圖。請同時參照圖1與圖2。在本實施例中,顯示面板100的基板130包括顯示區R1以及非顯示區R2。顯示面板100在顯示區R1顯示影像,因此顯示面板中用以顯示影像的元件(例如是畫素結構PX與顯示介質)會配置於顯示區R1,如圖1所示,畫素結構PX於顯示區R1中形成畫素陣列(pixel array)。相對地,非顯示區R2不顯示影像,故通常會於非顯示區R2形成周邊電路S以及驅動晶片區R,以避免影響顯示面板100的外觀。其中,周邊電路S與畫素結構PX電性連
接,且驅動晶片區R可包括晶片IC,用來驅動顯示面板100。在本實施例中,顯示區R1為一矩形區域,而非顯示區R2為一環繞並鄰接顯示區R1的口字形區域。在本發明之其他實施例中,顯示區R1之形狀亦可為圓形、橢圓形、多邊形或其他形狀,而非顯示區R2之形狀亦可搭配顯示區R1之形狀而做適當的更動,本發明不限於此。此外,本實施例的驅動晶片區R為一位於非顯示區R2一側的矩形區域,然其他實施例的驅動晶片區R亦可位於非顯示區R2的另一側甚至是環繞顯示區R1周圍來配置。
本實施例的顯示面板100例如是使用非晶矽(amorphous silicon)、氧化物半導體(oxide semiconductor)或低溫多晶矽(low-temperature polysilicon,LTPS)作為薄膜電晶體內之主動層之液晶顯示(liquid crystal display,LCD)面板或有機發光二極體(organic light emitting diode,OLED)面板,但本發明不限制顯示面板的種類。畫素結構PX會隨著顯示面板100的類型而有不同的組成。例如,主動元件為薄膜電晶體,而顯示元件為電泳顯示(electro-phoretic display,EPD)元件或有機發光二極體(OLED)顯示元件等。另外,在已知的顯示架構中,畫素結構PX還可包括掃描線、資料線、畫素電極等構件,而上述畫素結構PX的製作例如經過塗佈、沈積、蝕刻、高溫處理等程序。基板130可包括聚亞醯胺(polyimide,PI)等有機材料。
本實施例的顯示面板100的顯示區R1以及非顯示區R2可具有保護層(未繪示),且上述保護層覆蓋周邊電路S以及畫素結
構PX所形成的畫素陣列。應注意的是,非顯示區R2的保護層可具有多個開孔160(如圖2所示),且上述開孔160暴露出基板130,亦即,開孔160未穿過基板130。特別地,本實施例的開孔160是形成於非顯示區R2的驅動晶片區R,然本發明不限於此,開孔160亦可形成於非顯示區R2的其他位置。開孔160的孔徑d1例如是介於1μm至1mm之間,開孔160的間距例如是介於10μm至1cm之間,然本發明不限於此。取決於基板130上方之薄膜的性質,可調整非顯示區R2之開孔160的孔徑d1與間距d2。舉例而言,當基板130上方之薄膜具有收縮應力時,由於氣體不易於基板內橫向擴散,故需要放大開孔160的孔徑d1或縮小開孔160的間距d2,以提高通過開孔160而達到基板130下方之膠材層(未繪示)的氣體量;相反地,當基板130上方之薄膜具有拉伸應力時,則可縮小開孔160的孔徑d1或增加開孔160的間距d2,亦即,可降低開孔160於非顯示區R2中的分布密度,如此可使顯示面板100的設計與製程變得更加方便。當增加上層薄膜的拉伸應力時,例如:塗布一層有機材質介電層,其會帶來額外拉伸應力,即可觀察到氣體於基板內橫向擴散距離增加。此外,如圖2所示,本實施例的開孔160為均勻分布,然本發明不限於此,亦可視製程需要調整開孔160分布的形式,只要開孔160不與非顯示區R2中的金屬元件(例如導線、薄膜電晶體)重疊即可。
圖3是根據本發明之另一實施例的顯示面板的上視示意圖。本實施例與圖1之實施例類似,故相同或相似的元件以相同
或相似的的元件符號表示,且於此不再贅述。顯示面板200與顯示面板100之唯一差異在於,顯示面板200的驅動晶片區R已接合上晶片IC。如前所述,一般若是於取下基板130之前即完成晶片IC接合,則硬質的晶片IC會造成應力集中而增加離型力,以致於取下基板130的過程中可能會對基板130上之薄膜造成破壞。值得一提的是,本實施例的顯示面板200的非顯示區R2的保護層(未繪示)可具有多個開孔160(如圖2所示),且上述開孔160暴露出基板130,亦即開孔160未穿過基板130。藉由將多個開孔160配置於非顯示區R2,氣體可透過開孔160擴散到基板130,且由於基板130的材質(例如聚亞醯胺(PI))具有不阻氣的特性,氣體可進一步擴散至基板130下方的膠材層(未繪示)。結合氣體與後續例如UV或加熱之處理,使基板130與膠材層分離。基於上述,根據本發明一實施例的顯示面板200因為於非顯示區R2具有多個開孔160,而可大幅降低晶片IC接合導致其基板130取下所需的離型力,進而提高顯示面板200產品的良率。特別地,由於開孔160是位於非顯示區R2,故在顯示面板200為OLED面板的情況下,亦不會破壞OLED區域的阻水與阻氣特性。下文將參照圖式,更詳細地說明顯示面板100的製程步驟。
圖4A至圖4I是沿圖1的顯示面板之線I-I’所繪示的本發明之一實施例的顯示面板的製程剖面圖。首先,請參照圖4A,在支撐基板110上形成膠材層120。支撐基板110例如是玻璃基板等具有透光性且可提供充分的支撐強度的板材。膠材層120例如是
對紫外光敏感(UV-sensitive)或對特定波段之光線敏感的有機材料,其材質可包括聚對二甲苯(parylene)或光阻材料。上述聚對二甲苯可為N型、C型、D型或HT型的聚對二甲苯,而上述光阻材料可為正型光阻或負型光阻。更具體而言,正型光阻例如是酚醛樹脂(phenol formaldehyde resin)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA,或稱Acrylic),而負型光阻例如是環氧基體樹脂(epoxy-base resin)或壓克力型樹脂(acrylic series)。支撐基板110與膠材層120具有良好的溫度耐受性,並且可藉由後續的高溫製程(例如大於250℃)來強化支撐基板110與膠材層120之間的黏著力。
接著,請參照圖4B,在膠材層120上方形成基板130,並藉由膠材層120將基板130固定於支撐基板110上,其中基板130具有顯示區R1以及非顯示區R2,非顯示區R2更可包括驅動晶片區R。在此,由於後續的高溫製程可強化支撐基板110與膠材層120之間的黏著力,因此基板130會被穩固地附著在支撐基板110上。基板130的材質可包括聚亞醯胺(polyimide,PI)等有機材料。此外,本實施例的膠材層120例如是完全覆蓋基板130的底面,也就是說,不需要對膠材層120進行圖案化製程,而是在基板130的接合面上形成全面的膠材層120。
然後,如圖4C所示,於基板130上形成緩衝層(buffer layer)140。緩衝層140的材料包括無機材料(例如:氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述至少二種材料的堆疊層)、
有機材料、或其它合適的材料、或上述之組合。在其他實施例中,可省略形成上述緩衝層140的步驟。
接著,如圖4D所示,在基板130之顯示區R1中形成由多個畫素結構PX排列而成的畫素陣列,為方便說明,在此僅繪示一個畫素結構PX。具體而言,畫素結構PX可包括形成於基板130上的主動元件以及位於主動元件上的顯示元件,在此,畫素結構PX會隨著顯示面板100的類型而有不同的組成。例如,主動元件為薄膜電晶體,而顯示元件為電泳顯示元件或有機發光二極體顯示元件。此外,在已知的顯示架構中,畫素結構PX還可包括掃描線、資料線、畫素電極等構件,而上述畫素陣列的製作例如經過塗佈、沈積、蝕刻、高溫處理等程序。此外,在此步驟中更於基板130之非顯示區R2中形成周邊電路,周邊電路是由多個導電元件C所構成。導電元件C例如是金屬導線、薄膜電晶體或電容器等元件。上述周邊電路與畫素陣列電性連接,以驅動畫素結構PX的畫素電極。
然後,如圖4E所示,在基板130上形成保護層150,覆蓋周邊電路以及畫素陣列。保護層可以是有機材料或是無機材料,本發明不限於此。
接著,如圖4F所示,在非顯示區R2之保護層150與緩衝層140中形成多個開孔160,且上述開孔160暴露出基板130。特別地,開孔160亦可形成於驅動晶片區R的保護層150與緩衝層140中。應注意的是,開孔160不與非顯示區R2中的導電元件
C重疊,且開孔160未穿過基板130而是止於基板130。開孔160的孔徑d1例如是介於1μm至1mm之間,開孔160的間距例如是介於10μm至1cm之間,然本發明不限於此。取決於基板130上方之薄膜的性質,可調整非顯示區R2之開孔160的孔徑d1與間距d2。舉例而言,當基板130上方之薄膜具有收縮應力時,由於氣體不易於基板內橫向擴散,故需要放大開孔160的孔徑d1或縮小開孔160的間距d2,以提高通過開孔160而達到基板130下方之膠材層120的氣體量;相反地,當基板130上方之薄膜具有拉伸應力時,則可縮小開孔160的孔徑d1或增加開孔160的間距d2,亦即,可降低開孔160於非顯示區R2中的分布密度,如此可使顯示面板100的設計與製程變得更加方便。此外,開孔160的分布可以是均勻的或非均勻的,可視製程需要調整開孔160分布的形式,只要開孔160不與非顯示區R2中的金屬元件C重疊即可。
再來,如圖4G所示,在溫度介於5℃至80℃且壓力為一大氣壓的環境下通入氣體G並對膠材進行處理程序,上述處理時間介於1秒至10分鐘,以使膠材層120與基板130之間的黏著力降低,其中氣體G經由上述開孔160通入基板130並且擴散至膠材層120。氣體G包括大氣或氧氣。上述對膠材進行之處理程序包括照光程序或加熱程序。舉例而言,可由支撐基板110的背面對膠材層120照光L,以弱化膠材層120分別與基板130以及支撐基板110之間的黏著力。由於支撐基板110整體為透光體,因此膠材層120可以全面且均勻地受光而使膠材層120可均勻地受
光裂解。在此,對膠材層120提供照光L的光線例如是紫外光,其功率例如介於5mW/cm2至300mW/cm2。當然,隨著所選用的膠材層120的感光特性的不同,可能對膠材層120照射不同波段與不同功率的光線。
之後,參照圖4H,將基板130與膠材層120分離而自支撐基板110上移除。值得一提的是,在本實施例中,經過上述對膠材進行之處理後,膠材層120與基板130之黏合面所受到的弱化程度大於膠材層120與支撐基板110之黏合面所受到的弱化程度,故基板130可與膠材層120分離,而使膠材層120保留於支撐基板110上。上述好處是不需再經過自基板130移除膠材層120的步驟而即可完成本發明一實施例之顯示面板100的製作(如圖4I所示)。在其他實施例中,膠材層120亦可留在基板130上而一起自支撐基板110上移除(未繪示)。留在基板130上的膠材層120可以增加取下之顯示面板100之阻水阻氧之能力。沒有開孔160的習知顯示面板將基板自支撐基板上剝離所需的離型力約為14gf/25mm,在剝離前已接合有晶片的情況下,離型力甚至可達1000gf/25mm。而在本實施例中,在剝離前已接合有晶片的情況下,將基板130自支撐基板110上剝離所需的離型力例如可大幅降低至小於或等於1gf/mm。當然,實際所需的離型力會隨著膠材層120與支撐基板110的材質變化,並視對膠材層120進行的照光或加熱處理不同而有所不同。
需說明的是,本發明對在驅動晶片區R中設置晶片IC的
時間點並不限於是在將基板130與膠材層120分離之後,也可以選擇在形成開孔160(圖4F的步驟)之後,在驅動晶片區R中設置晶片IC,接著才進行通入氣體G以及對膠材進行處理程序的步驟(圖4G的步驟)。應注意,晶片IC之寬度不大於開孔160之間距,且晶片IC之長軸方向與開孔160平行。
綜上所述,本發明的顯示面板於非顯示區之保護層具有多個開孔,可以大幅降低取下可撓式基板時的離型力,提高取下可撓式基板的成功率,進而增加顯示面板產品的良率。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
130‧‧‧基板
140‧‧‧緩衝層
150‧‧‧保護層
160‧‧‧開孔
C‧‧‧導電元件
I-I’‧‧‧線
PX‧‧‧畫素結構
R1‧‧‧顯示區
R2‧‧‧非顯示區
Claims (10)
- 一種顯示面板的製造方法,包括:在一支撐基板上依序形成一膠材層以及一基板,其中該基板具有一顯示區以及一非顯示區;在該基板之該顯示區中形成一畫素陣列,且於該基板之該非顯示區中形成一周邊電路,該周邊電路與該畫素陣列電性連接;在該基板上形成一保護層,覆蓋該周邊電路以及該畫素陣列;在該非顯示區之該保護層中形成多個開孔,以暴露出該基板;通入一氣體並對該膠材進行一處理程序,以使該膠材層與該基板之間的黏著力降低,其中該氣體經由該些開孔通入該基板並且擴散至該膠材層;以及使該基板與該膠材層分離。
- 如申請專利範圍第1項所述的顯示面板的製造方法,其中該些開孔的孔徑介於1μm至1mm,且該些開孔的間距介於10μm至1cm。
- 如申請專利範圍第1項所述的顯示面板的製造方法,其中該非顯示區更包括一驅動晶片區,且該些開孔形成在該驅動晶片區的該保護層中。
- 如申請專利範圍第3項所述的顯示面板的製造方法,其中在形成該些開孔之後,更包括在該驅動晶片區內設置一晶片。
- 如申請專利範圍第3項所述的顯示面板的製造方法,其中在通入該氣體並對該膠材進行該處理程序之後,更包括在該驅動 晶片區內設置一晶片。
- 如申請專利範圍第1項所述的顯示面板的製造方法,其中通入的該氣體包括氧氣,且對該膠材進行的該處理程序包括一照光程序或是一加熱程序。
- 一種顯示面板,包括:一基板,包括一顯示區以及一非顯示區;一畫素陣列,位於該基板之該顯示區中;一周邊電路,位於該非顯示區中;以及一保護層,位於該顯示區以及該非顯示區且覆蓋該周邊電路以及該畫素陣列,其中該非顯示區之該保護層具有多個開孔以暴露出該基板,且該些開孔的孔徑介於1μm至1mm之間,該些開孔的間距介於10μm至1cm之間。
- 如申請專利範圍第7項所述的顯示面板,更包括:一支撐基板,位於該基板之下方;以及一膠材層,位於該基板與該支撐基板之間。
- 如申請專利範圍第7項所述的顯示面板,其中該基板之該非顯示區更包括一驅動晶片區,且該些開孔形成在該驅動晶片區的該保護層中。
- 如申請專利範圍第9項所述的顯示面板,更包括一驅動晶片,位於該驅動晶片區中。
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JP4197233B2 (ja) * | 2002-03-20 | 2008-12-17 | 株式会社日立製作所 | 表示装置 |
CN100428407C (zh) * | 2007-01-04 | 2008-10-22 | 友达光电股份有限公司 | 可挠性阵列基板的制造方法 |
KR101365118B1 (ko) * | 2007-02-22 | 2014-02-25 | 삼성디스플레이 주식회사 | 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 장치 |
JP5723007B2 (ja) * | 2011-07-20 | 2015-05-27 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えた表示パネル |
CN102522420A (zh) | 2011-11-16 | 2012-06-27 | 友达光电股份有限公司 | 具可挠性基板的显示装置及其制造方法 |
TWI428243B (zh) | 2011-12-23 | 2014-03-01 | Ind Tech Res Inst | 可撓式元件的取下方法 |
CN203134796U (zh) * | 2012-12-26 | 2013-08-14 | 厦门天马微电子有限公司 | 一种阵列基板及其平板显示器 |
JP2014174309A (ja) * | 2013-03-08 | 2014-09-22 | Sony Corp | 液晶表示装置 |
CN103337500B (zh) | 2013-05-24 | 2015-12-23 | 友达光电股份有限公司 | 主动元件阵列基板及其制造方法 |
-
2014
- 2014-01-24 TW TW103102702A patent/TWI518405B/zh active
- 2014-05-13 CN CN201410200401.1A patent/CN103955089B/zh active Active
- 2014-06-24 US US14/312,709 patent/US9257669B2/en active Active
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2015
- 2015-12-30 US US14/983,567 patent/US9349997B2/en active Active
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US9349997B2 (en) | 2016-05-24 |
CN103955089B (zh) | 2016-09-21 |
US20160111690A1 (en) | 2016-04-21 |
US20150214503A1 (en) | 2015-07-30 |
CN103955089A (zh) | 2014-07-30 |
TW201530216A (zh) | 2015-08-01 |
US9257669B2 (en) | 2016-02-09 |
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