TW340973B - Mono-chip mixed carrier semiconductor and the checking method - Google Patents

Mono-chip mixed carrier semiconductor and the checking method

Info

Publication number
TW340973B
TW340973B TW086106990A TW86106990A TW340973B TW 340973 B TW340973 B TW 340973B TW 086106990 A TW086106990 A TW 086106990A TW 86106990 A TW86106990 A TW 86106990A TW 340973 B TW340973 B TW 340973B
Authority
TW
Taiwan
Prior art keywords
semiconductor
mono
mixed carrier
checking method
chip mixed
Prior art date
Application number
TW086106990A
Other languages
English (en)
Inventor
Tomomi Momohara
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW340973B publication Critical patent/TW340973B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31721—Power aspects, e.g. power supplies for test circuits, power saving during test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505—Test of Modular systems, e.g. Wafers, MCM's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
    • G01R31/31924—Voltage or current aspects, e.g. driver, receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31917—Stimuli generation or application of test patterns to the device under test [DUT]
    • G01R31/31926—Routing signals to or from the device under test [DUT], e.g. switch matrix, pin multiplexing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31907—Modular tester, e.g. controlling and coordinating instruments in a bus based architecture
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5002—Characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Memories (AREA)
TW086106990A 1996-05-30 1997-05-23 Mono-chip mixed carrier semiconductor and the checking method TW340973B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13689296 1996-05-30
JP9113900A JPH1070243A (ja) 1996-05-30 1997-05-01 半導体集積回路装置およびその検査方法およびその検査装置

Publications (1)

Publication Number Publication Date
TW340973B true TW340973B (en) 1998-09-21

Family

ID=26452786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106990A TW340973B (en) 1996-05-30 1997-05-23 Mono-chip mixed carrier semiconductor and the checking method

Country Status (5)

Country Link
US (1) US6055655A (zh)
JP (1) JPH1070243A (zh)
KR (1) KR100308749B1 (zh)
CN (1) CN1118100C (zh)
TW (1) TW340973B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661248B2 (en) 2001-08-31 2003-12-09 Mitsubishi Denki Kabushiki Kaisha Tester for semiconductor integrated circuits

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025304A1 (fr) * 1996-12-04 1998-06-11 Hitachi, Ltd. Dispositif a semi-conducteur
US5880991A (en) * 1997-04-14 1999-03-09 International Business Machines Corporation Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
US6249841B1 (en) * 1998-12-03 2001-06-19 Ramtron International Corporation Integrated circuit memory device and method incorporating flash and ferroelectric random access memory arrays
DE19911939C2 (de) * 1999-03-17 2001-03-22 Siemens Ag Verfahren für den eingebauten Selbsttest einer elektronischen Schaltung
JP2001035994A (ja) * 1999-07-15 2001-02-09 Toshiba Corp 半導体集積回路装置およびシステム基板
US7678836B2 (en) * 1999-11-04 2010-03-16 Fxs Ventures, Llc Method for rendering a contact lens wettable
JP2001291779A (ja) * 2000-04-05 2001-10-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100370155B1 (ko) * 2000-05-01 2003-01-29 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
JP3718106B2 (ja) * 2000-05-22 2005-11-16 松下電器産業株式会社 半導体集積回路
US20020125537A1 (en) * 2000-05-30 2002-09-12 Ting-Wah Wong Integrated radio frequency circuits
US6441442B1 (en) * 2000-05-30 2002-08-27 Programmable Silicon Solutions Integrated inductive circuits
US6917095B1 (en) * 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
TW451466B (en) * 2000-06-09 2001-08-21 Macronix Int Co Ltd A method of erasing a non-volatile memory
US6815803B1 (en) * 2000-06-16 2004-11-09 Infineon Technologies Ag Multiple chip semiconductor arrangement having electrical components in separating regions
JP2002033436A (ja) * 2000-07-14 2002-01-31 Hitachi Ltd 半導体装置
JP2002324393A (ja) * 2001-04-25 2002-11-08 Mitsubishi Electric Corp 半導体記憶装置
US6815231B2 (en) * 2001-06-11 2004-11-09 Hitachi, Ltd. Method of testing and manufacturing nonvolatile semiconductor memory
US6670234B2 (en) * 2001-06-22 2003-12-30 International Business Machines Corporation Method of integrating volatile and non-volatile memory cells on the same substrate and a semiconductor memory device thereof
US6621325B2 (en) * 2001-09-18 2003-09-16 Xilinx, Inc. Structures and methods for selectively applying a well bias to portions of a programmable device
US6650589B2 (en) * 2001-11-29 2003-11-18 Intel Corporation Low voltage operation of static random access memory
US7408218B2 (en) * 2001-12-14 2008-08-05 Renesas Technology Corporation Semiconductor device having plural dram memory cells and a logic circuit
US6681309B2 (en) * 2002-01-25 2004-01-20 Hewlett-Packard Development Company, L.P. Method and apparatus for measuring and optimizing spatial segmentation of electronic storage workloads
JP4005813B2 (ja) * 2002-01-28 2007-11-14 株式会社東芝 半導体装置
JP2003282823A (ja) * 2002-03-26 2003-10-03 Toshiba Corp 半導体集積回路
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
JP2004134599A (ja) * 2002-10-11 2004-04-30 Renesas Technology Corp 半導体装置、およびそのレイアウト方法
US7205758B1 (en) 2004-02-02 2007-04-17 Transmeta Corporation Systems and methods for adjusting threshold voltage
US7949864B1 (en) 2002-12-31 2011-05-24 Vjekoslav Svilan Balanced adaptive body bias control
US6936898B2 (en) * 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7953990B2 (en) * 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US7076757B2 (en) * 2003-02-27 2006-07-11 Nec Electronics Corporation Semiconductor integrated device and apparatus for designing the same
KR100508090B1 (ko) * 2003-03-25 2005-08-17 삼성전자주식회사 반도체 소자의 테스트 패턴 및 그 형성방법
KR100493061B1 (ko) * 2003-06-20 2005-06-02 삼성전자주식회사 비휘발성 메모리가 내장된 단일 칩 데이터 처리 장치
US7205633B2 (en) * 2003-06-27 2007-04-17 Micron Technology, Inc. Capacitor layout orientation
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7027316B2 (en) * 2003-12-29 2006-04-11 Micron Technology, Inc. Access circuit and method for allowing external test voltage to be applied to isolated wells
US20050172182A1 (en) * 2004-01-15 2005-08-04 Elias Gedamu Optimal operational voltage identification for a processor design
US7859062B1 (en) 2004-02-02 2010-12-28 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7816742B1 (en) 2004-09-30 2010-10-19 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
KR100604561B1 (ko) * 2004-05-11 2006-07-31 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자 및 이의 웰 형성 방법
US7509504B1 (en) * 2004-09-30 2009-03-24 Transmeta Corporation Systems and methods for control of integrated circuits comprising body biasing systems
KR100797896B1 (ko) * 2004-11-12 2008-01-24 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다양한 동작 전압들을 갖는 집적 회로들을 절연시키기 위한반도체 구조
JP4522352B2 (ja) * 2005-11-09 2010-08-11 シャープ株式会社 回路検査方法及び回路検査システム
US8030649B2 (en) * 2006-07-28 2011-10-04 International Business Machines Corporation Scan testing in single-chip multicore systems
US7539034B2 (en) * 2007-02-01 2009-05-26 Qimonda North America Corp. Memory configured on a common substrate
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US7893712B1 (en) 2009-09-10 2011-02-22 Xilinx, Inc. Integrated circuit with a selectable interconnect circuit for low power or high performance operation
JP5631750B2 (ja) * 2010-03-19 2014-11-26 株式会社東芝 複合メモリ
JP5520747B2 (ja) * 2010-08-25 2014-06-11 株式会社日立製作所 キャッシュを搭載した情報装置及びコンピュータ読み取り可能な記憶媒体
JP5623653B2 (ja) * 2010-11-23 2014-11-12 コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドＣｏｎｖｅｒｓａｎｔ Ｉｎｔｅｌｌｅｃｔｕａｌ Ｐｒｏｐｅｒｔｙ Ｍａｎａｇｅｍｅｎｔ Ｉｎｃ． 集積回路デバイス内の内部電源を共有するための方法および装置
US8921978B2 (en) * 2012-01-10 2014-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
KR101975528B1 (ko) 2012-07-17 2019-05-07 삼성전자주식회사 패스트 어레이 영역을 갖는 반도체 메모리 셀 어레이 및 그것을 포함하는 반도체 메모리
US9304163B2 (en) * 2013-11-07 2016-04-05 Qualcomm Incorporated Methodology for testing integrated circuits
JP6451177B2 (ja) * 2014-09-25 2019-01-16 株式会社ソシオネクスト スタティックｒａｍおよびスタティックｒａｍを搭載する半導体装置
KR102388044B1 (ko) * 2015-10-19 2022-04-19 삼성전자주식회사 테스트 장치 및 이를 포함하는 테스트 시스템
US9953695B2 (en) * 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
FR3053156B1 (fr) * 2016-06-28 2018-11-16 Stmicroelectronics (Rousset) Sas Composant a faible dispersion dans une puce electronique
JP7487213B2 (ja) 2019-04-15 2024-05-20 長江存儲科技有限責任公司 プロセッサおよびダイナミック・ランダムアクセス・メモリを有する接合半導体デバイスおよびそれを形成する方法
JP7197719B2 (ja) 2019-04-15 2022-12-27 長江存儲科技有限責任公司 半導体デバイス及び方法
CN110731012B (zh) 2019-04-15 2021-01-29 长江存储科技有限责任公司 具有处理器和异构存储器的一体化半导体器件及其形成方法
WO2020220484A1 (en) 2019-04-30 2020-11-05 Yangtze Memory Technologies Co., Ltd. Bonded unified semiconductor chips and fabrication and operation methods thereof
CN110192269A (zh) * 2019-04-15 2019-08-30 长江存储科技有限责任公司 三维nand存储器件与多个功能芯片的集成
JP7311615B2 (ja) * 2019-04-30 2023-07-19 長江存儲科技有限責任公司 プロセッサおよびｎａｎｄフラッシュメモリを有する接合半導体デバイスならびにそれを形成する方法
CN110720143B (zh) 2019-04-30 2021-01-29 长江存储科技有限责任公司 具有处理器和nand闪存的键合半导体器件及其形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467400A (en) * 1981-01-16 1984-08-21 Burroughs Corporation Wafer scale integrated circuit
JPS6230367U (zh) * 1985-08-07 1987-02-24
JP2628154B2 (ja) * 1986-12-17 1997-07-09 富士通株式会社 半導体集積回路
JPH036853A (ja) * 1989-06-05 1991-01-14 Hitachi Ltd 半導体集積回路装置
JPH0344961A (ja) * 1989-07-13 1991-02-26 Mitsubishi Electric Corp 半導体集積回路装置
DE69031257T2 (de) * 1989-09-21 1998-02-12 Texas Instruments Inc Integrierte Schaltung mit einem eingebetteten digitalen Signalprozessor
JP2656394B2 (ja) * 1991-03-29 1997-09-24 シャープ株式会社 集積回路装置
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
FR2700063B1 (fr) * 1992-12-31 1995-02-10 Sgs Thomson Microelectronics Procédé de test de puces de circuit intégré et dispositif intégré correspondant.
JP2839819B2 (ja) * 1993-05-28 1998-12-16 株式会社東芝 不揮発性半導体記憶装置
JP3075892B2 (ja) * 1993-07-09 2000-08-14 株式会社東芝 半導体装置
JP3293995B2 (ja) * 1994-03-10 2002-06-17 株式会社東芝 プロ−ビング装置およびプロ−ビング方法
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
JP3135825B2 (ja) * 1995-09-27 2001-02-19 株式会社東芝 プローブカードおよびそのプローブカードを使用した半導体集積回路のプロービング試験方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661248B2 (en) 2001-08-31 2003-12-09 Mitsubishi Denki Kabushiki Kaisha Tester for semiconductor integrated circuits

Also Published As

Publication number Publication date
JPH1070243A (ja) 1998-03-10
KR100308749B1 (ko) 2001-12-15
US6055655A (en) 2000-04-25
CN1190262A (zh) 1998-08-12
CN1118100C (zh) 2003-08-13

Similar Documents

Publication Publication Date Title
TW340973B (en) Mono-chip mixed carrier semiconductor and the checking method
TW340257B (en) Semiconductor device and process thereof
TW350106B (en) Semiconductor elements and the manufacturing method
TW338847B (en) Semiconductor device with isolation insulating film tapered and method of manufacturing the same
IN186957B (zh)
EP0199304A3 (en) Method of automatic circuit translation
TW340210B (en) Method for dispensing absorbent articles
FR2670322B1 (fr) Modules de memoire a l'etat solide et dispositifs de memoire comportant de tels modules
EP0658904A3 (en) Integrated semiconductor circuit arrangement.
AU4322097A (en) Semiconductor device, method for manufacturing the same, circuit board, and flexible substrate
DE69632954D1 (de) Zweifachorthogonale kode, und vermittlungssystem mit mehrfachzugriff durch frequenzverteilung
TW357427B (en) Integrated circuit having integral decoupling capacitor
EP0213037A3 (en) Semiconductor memory device having test pattern generating circuit
DE69635603D1 (de) Höckerkontakt für eine Leiterplatte und Halbleitermodul mit derselben
WO2003094203A3 (en) Direct-connect signaling system
FI973555A0 (fi) Menetelmä ohmisen kontaktin tuottamiseksi sekä tällaisella ohmisella kontaktilla varustettu puolijohdeväline
SG93185A1 (en) Tape carrier for tab, integrated circuit device, a method of making the same, and an electronic device
EP0304263A3 (en) Semiconductor chip assembly
WO1990003853A3 (fr) Machine de tri automatique d'objets
TW338164B (en) Integrated circuit wiring
TW337034B (en) Non-volatile semiconductor memory and the manufacturing method
TW359024B (en) Stage silicon control rectifier protection circuit and the structure
TW350116B (en) A semiconductor device and the manufacturing method
HK1020394A1 (en) Substrate for semiconductor device, semiconductor device and method for manufacturing the same, circuit board, and electronic equipment
AU4400093A (en) Sub-nanoscale electronic systems, devices and processes

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees