SG62484G - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- SG62484G SG62484G SG624/84A SG62484A SG62484G SG 62484 G SG62484 G SG 62484G SG 624/84 A SG624/84 A SG 624/84A SG 62484 A SG62484 A SG 62484A SG 62484 G SG62484 G SG 62484G
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0811—MIS diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55155946A JPS5780828A (en) | 1980-11-07 | 1980-11-07 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG62484G true SG62484G (en) | 1985-03-15 |
Family
ID=15616973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG624/84A SG62484G (en) | 1980-11-07 | 1984-09-01 | Semiconductor integrated circuit device |
Country Status (9)
Country | Link |
---|---|
US (1) | US4477736A (ja) |
JP (1) | JPS5780828A (ja) |
DE (1) | DE3144001A1 (ja) |
FR (1) | FR2494021B1 (ja) |
GB (1) | GB2087183B (ja) |
HK (1) | HK89684A (ja) |
IT (1) | IT1140272B (ja) |
MY (1) | MY8500849A (ja) |
SG (1) | SG62484G (ja) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114392A (ja) * | 1981-12-07 | 1983-07-07 | Fujitsu Ltd | 半導体記憶装置 |
FR2550011B1 (fr) * | 1983-07-29 | 1986-10-10 | Thomson Csf | Dispositif d'interconnexion entre les cellules d'un circuit integre hyperfrequences pre-implante |
US4571505A (en) * | 1983-11-16 | 1986-02-18 | Inmos Corporation | Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits |
JPS60115243A (ja) * | 1983-11-28 | 1985-06-21 | Nec Corp | モノリシック集積回路 |
US4553050A (en) * | 1983-12-27 | 1985-11-12 | International Business Machines Corporation | Transmission line terminator-decoupling capacitor chip for off-chip driver |
US4585958A (en) * | 1983-12-30 | 1986-04-29 | At&T Bell Laboratories | IC chip with noise suppression circuit |
JPS60192359A (ja) * | 1984-03-14 | 1985-09-30 | Nec Corp | 半導体メモリ装置 |
IT1218845B (it) * | 1984-03-30 | 1990-04-24 | Ates Componenti Elettron | Circuito di interfaccia attenuatore di rumore per generatori di segnali di temporizzazione a due fasi non sovrapposte |
US5202751A (en) * | 1984-03-30 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
JPS60206161A (ja) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | 半導体集積回路 |
GB2160049B (en) * | 1984-05-28 | 1987-06-03 | Suwa Seikosha Kk | A non-volatile memory circuit |
US4665327A (en) * | 1984-06-27 | 1987-05-12 | Harris Corporation | Current to voltage interface |
JPS61126690A (ja) * | 1984-11-26 | 1986-06-14 | Hitachi Ltd | 半導体メモリ |
US4609834A (en) * | 1984-12-24 | 1986-09-02 | Burroughs Corporation | Integrated logic circuit incorporating a module which generates a control signal that cancels switching noise |
US4758994A (en) * | 1986-01-17 | 1988-07-19 | Texas Instruments Incorporated | On chip voltage regulator for common collector matrix programmable memory array |
JPS62260355A (ja) * | 1986-05-06 | 1987-11-12 | Toshiba Corp | 半導体集積回路装置 |
NL8701997A (nl) * | 1987-08-26 | 1989-03-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met ontkoppelde dc bedrading. |
US4845388A (en) * | 1988-01-20 | 1989-07-04 | Martin Marietta Corporation | TTL-CMOS input buffer |
US4888498A (en) * | 1988-03-24 | 1989-12-19 | Texas Instruments Incorporated | Integrated-circuit power-up pulse generator circuit |
US4833350A (en) * | 1988-04-29 | 1989-05-23 | Tektronix, Inc. | Bipolar-CMOS digital interface circuit |
JPH01297839A (ja) * | 1988-05-26 | 1989-11-30 | Toshiba Corp | 半導体装置 |
US5266821A (en) * | 1988-05-31 | 1993-11-30 | Micron Technology, Inc. | Chip decoupling capacitor |
US5687109A (en) | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
US6124625A (en) * | 1988-05-31 | 2000-09-26 | Micron Technology, Inc. | Chip decoupling capacitor |
US4937476A (en) * | 1988-06-16 | 1990-06-26 | Intel Corporation | Self-biased, high-gain differential amplifier with feedback |
DE68922659T2 (de) * | 1988-06-27 | 1995-12-21 | Nippon Electric Co | Halbleiterspeichervorrichtung, die mit einer Niederrausch-Spannungsversorgung ausgestattet ist. |
US5079441A (en) * | 1988-12-19 | 1992-01-07 | Texas Instruments Incorporated | Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage |
JPH07114259B2 (ja) * | 1989-10-19 | 1995-12-06 | 株式会社東芝 | 半導体記憶装置 |
US5256590A (en) * | 1989-11-24 | 1993-10-26 | Mitsubishi Denki Kabushiki Kaisha | Method of making a shielded semiconductor device |
JPH03165058A (ja) * | 1989-11-24 | 1991-07-17 | Mitsubishi Electric Corp | 半導体装置 |
JP3124781B2 (ja) * | 1990-03-30 | 2001-01-15 | 富士通株式会社 | 半導体集積回路装置 |
JP2621612B2 (ja) * | 1990-08-11 | 1997-06-18 | 日本電気株式会社 | 半導体集積回路 |
US5041741A (en) * | 1990-09-14 | 1991-08-20 | Ncr Corporation | Transient immune input buffer |
JPH0562461A (ja) * | 1991-04-09 | 1993-03-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR930001392A (ko) * | 1991-06-19 | 1993-01-16 | 김광호 | 반도체 메모리 장치의 전원 접지선 배선방법 |
DE69333864T2 (de) * | 1992-06-12 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Herstellungsverfahren für Halbleiterbauelement mit Kondensator |
JP3217498B2 (ja) * | 1992-10-29 | 2001-10-09 | 富士通株式会社 | 半導体集積回路装置 |
EP0596637A1 (en) * | 1992-11-02 | 1994-05-11 | STMicroelectronics, Inc. | Input buffer circuit |
JP2684976B2 (ja) * | 1993-11-24 | 1997-12-03 | 日本電気株式会社 | 半導体装置 |
EP0660520B1 (en) * | 1993-11-30 | 2004-05-26 | Siliconix Incorporated | Multiple source power supply and method of selecting a power source from among multiple sources of power |
US5536977A (en) * | 1993-11-30 | 1996-07-16 | Siliconix Incorporated | Bidirectional current blocking MOSFET for battery disconnect switching |
US5568085A (en) * | 1994-05-16 | 1996-10-22 | Waferscale Integration Inc. | Unit for stabilizing voltage on a capacitive node |
WO1997010615A1 (en) * | 1995-09-11 | 1997-03-20 | Analog Devices, Inc. (Adi) | Electrostatic discharge protection network and method |
US6114756A (en) | 1998-04-01 | 2000-09-05 | Micron Technology, Inc. | Interdigitated capacitor design for integrated circuit leadframes |
US6414391B1 (en) * | 1998-06-30 | 2002-07-02 | Micron Technology, Inc. | Module assembly for stacked BGA packages with a common bus bar in the assembly |
JP3255134B2 (ja) * | 1999-01-22 | 2002-02-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US6597619B2 (en) | 2001-01-12 | 2003-07-22 | Micron Technology, Inc. | Actively driven VREF for input buffer noise immunity |
US6920316B2 (en) * | 2001-09-04 | 2005-07-19 | Freescale Semiconductor, Inc. | High performance integrated circuit regulator with substrate transient suppression |
US6943596B2 (en) * | 2002-03-12 | 2005-09-13 | Broadcom Corporation | Power-on reset circuit for use in low power supply voltage applications |
JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
US6755700B2 (en) * | 2002-11-12 | 2004-06-29 | Modevation Enterprises Inc. | Reset speed control for watercraft |
US7227411B2 (en) * | 2003-06-17 | 2007-06-05 | Broadcom Corporation | Apparatus for a differential self-biasing CMOS amplifier |
KR100539252B1 (ko) * | 2004-03-08 | 2005-12-27 | 삼성전자주식회사 | 데이터 버스 및 커맨드/어드레스 버스를 통해 전송되는신호의 충실도를 향상시킬 수 있는 메모리 모듈 및 이를포함하는 메모리 시스템 |
US6930550B1 (en) | 2004-04-26 | 2005-08-16 | Pericom Semiconductor Corp. | Self-biasing differential buffer with transmission-gate bias generator |
KR100728571B1 (ko) * | 2006-02-09 | 2007-06-15 | 주식회사 하이닉스반도체 | 반도체 메모리의 데이터 센싱장치 |
US7664907B1 (en) | 2006-11-02 | 2010-02-16 | Nvidia Corporation | Page stream sorter with dynamic binning |
US7664905B2 (en) * | 2006-11-03 | 2010-02-16 | Nvidia Corporation | Page stream sorter for poor locality access patterns |
KR101519039B1 (ko) * | 2008-11-27 | 2015-05-11 | 삼성전자주식회사 | 입출력 센스 앰프, 이를 포함하는 반도체 메모리 장치, 및 반도체 메모리 장치를 포함하는 메모리 시스템 |
KR20140071757A (ko) * | 2012-12-04 | 2014-06-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 반도체 메모리의 동작을 위한 기준 전압 생성 방법 |
US10403680B2 (en) * | 2015-03-31 | 2019-09-03 | Sony Semiconductor Solutions Corporation | Switch device and storage unit |
US10643677B2 (en) | 2018-06-26 | 2020-05-05 | Sandisk Technologies Llc | Negative kick on bit line control transistors for faster bit line settling during sensing |
US10643713B1 (en) | 2019-02-08 | 2020-05-05 | Sandisk Technologies Llc | Toggling power supply for faster bit line settling during sensing |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB203420A (en) * | 1922-06-14 | 1923-09-13 | British Insulated & Helsby Cables Ltd | Improvements connected with the rendering of line capacity of telephone cables uniform |
US3200260A (en) * | 1961-08-29 | 1965-08-10 | Fisk Bert | High current level interrupter means |
US3959665A (en) * | 1974-05-29 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Logic circuits with interfacing system |
DE2646245A1 (de) * | 1975-10-28 | 1977-05-05 | Motorola Inc | Speicherschaltung |
US4038646A (en) * | 1976-03-12 | 1977-07-26 | Intel Corporation | Dynamic mos ram |
US4095163A (en) * | 1976-06-01 | 1978-06-13 | Control Concepts Corporation | Transient voltage suppression circuit |
US4094008A (en) * | 1976-06-18 | 1978-06-06 | Ncr Corporation | Alterable capacitor memory array |
DE2642239C2 (de) * | 1976-09-20 | 1978-09-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Richtimpulsgeber |
-
1980
- 1980-11-07 JP JP55155946A patent/JPS5780828A/ja active Pending
-
1981
- 1981-10-26 US US06/315,056 patent/US4477736A/en not_active Expired - Lifetime
- 1981-10-30 FR FR8120400A patent/FR2494021B1/fr not_active Expired
- 1981-11-05 DE DE19813144001 patent/DE3144001A1/de not_active Ceased
- 1981-11-05 IT IT24892/81A patent/IT1140272B/it active
- 1981-11-06 GB GB8133610A patent/GB2087183B/en not_active Expired
-
1984
- 1984-09-01 SG SG624/84A patent/SG62484G/en unknown
- 1984-11-15 HK HK896/84A patent/HK89684A/xx unknown
-
1985
- 1985-12-30 MY MY849/85A patent/MY8500849A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT8124892A0 (it) | 1981-11-05 |
IT1140272B (it) | 1986-09-24 |
DE3144001A1 (de) | 1982-08-26 |
FR2494021A1 (fr) | 1982-05-14 |
MY8500849A (en) | 1985-12-31 |
HK89684A (en) | 1984-11-23 |
FR2494021B1 (fr) | 1986-09-12 |
US4477736A (en) | 1984-10-16 |
GB2087183B (en) | 1984-04-26 |
JPS5780828A (en) | 1982-05-20 |
GB2087183A (en) | 1982-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3162416D1 (en) | Semiconductor integrated circuit device | |
GB2087183B (en) | Semiconductor integrated circuit device | |
JPS5759372A (en) | Circuit structure altering device for integrated semiconductor circuit | |
DE3277855D1 (en) | Semiconductor integrated circuit device | |
GB8319848D0 (en) | Semiconductor integrated circuit device | |
GB8324163D0 (en) | Semiconductor integrated circuit device | |
DE3064607D1 (en) | Semiconductor integrated circuit device | |
DE3380242D1 (en) | Semiconductor integrated circuit device | |
DE3278873D1 (en) | Semiconductor integrated circuit device | |
GB2061617B (en) | Semiconductor integrated circuit device | |
MY8600561A (en) | Semiconductor integrated circuit device | |
GB2088629B (en) | Improvements in semiconductor integrated circuit devices | |
GB2089611B (en) | Semiconductor integrated circuit device | |
GB2074788B (en) | Semiconductor integrated circuit | |
GB8306917D0 (en) | Semiconductor integrated circuit device | |
HK46086A (en) | Semiconductor integrated circuit device | |
DE3175780D1 (en) | Semiconductor integrated circuit devices | |
HK54386A (en) | Semiconductor integrated circuit device | |
GB2084397B (en) | Semiconductor integrated circuit | |
DE3380105D1 (en) | Semiconductor integrated circuit device | |
JPS5734355A (en) | Integrated circuit device | |
DE3174824D1 (en) | Semiconductor integrated circuit | |
GB8502453D0 (en) | Semiconductor integrated circuit device | |
JPS57113259A (en) | Integrated circuit device | |
DE3171445D1 (en) | Semiconductor integrated circuit device |