RU2009102208A - Межсоединение методом перевернутого кристалла на основе сформированных соединений - Google Patents

Межсоединение методом перевернутого кристалла на основе сформированных соединений Download PDF

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RU2009102208A
RU2009102208A RU2009102208/28A RU2009102208A RU2009102208A RU 2009102208 A RU2009102208 A RU 2009102208A RU 2009102208/28 A RU2009102208/28 A RU 2009102208/28A RU 2009102208 A RU2009102208 A RU 2009102208A RU 2009102208 A RU2009102208 A RU 2009102208A
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Prior art keywords
protrusion
connection
compound according
connecting surface
electrical component
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RU2009102208/28A
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English (en)
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RU2441298C2 (ru
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Войтек СУДОЛ (US)
Войтек СУДОЛ
Марта УИЛСОН (US)
Марта УИЛСОН
Original Assignee
Конинклейке Филипс Электроникс, Н.В. (Nl)
Конинклейке Филипс Электроникс, Н.В.
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Publication of RU2009102208A publication Critical patent/RU2009102208A/ru
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Publication of RU2441298C2 publication Critical patent/RU2441298C2/ru

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  • Wire Bonding (AREA)

Abstract

1. Электрическое соединение по методу перевернутого кристалла между первым и вторым электрическими компонентами (250, 260), включающее в себя ! выступ (210), имеющий первую и вторую электрически соединяющиеся поверхности (214, 215), где первая соединяющаяся поверхность (214) выступа (210) электрически соединена с первым электрическим компонентом (250); и ! площадку (220), имеющую первую и вторую электрически соединяющиеся поверхности (224, 228), где первая соединяющаяся поверхность (224) площадки (220) электрически соединена со вторым электрическим компонентом (260), а вторая электрически соединяющаяся поверхность (228) площадки (220) электрически соединена и по размерам меньше, чем вторая электрически соединяющаяся поверхность (215) выступа (210). ! 2. Соединение по п.1, в котором выступ (210) является столбиковым выступом. ! 3. Соединение по п.1, в котором выступ (210) является шариковым выступом. ! 4. Соединение по п.1, в котором выступ (210) сконфигурирован с высотой выступа в диапазоне 50-150 мкм. ! 5. Соединение по п.1, в котором первая соединяющаяся поверхность (214) выступа (210) имеет диаметр в диапазоне 50-120 мкм. ! 6. Соединение по п.1, в котором площадка (220) сконфигурирована, имеющей диаметр в диапазоне 10-70 мкм. ! 7. Соединение по п.1, в котором первый электрический компонент (250) является акустическим элементом. ! 8. Соединение по п.1, в котором второй электрический компонент (260) является специализированной интегральной схемой (ASIC). ! 9. Соединение по п.8, в котором специализированная интегральная схема (ASIC) сконфигурирована имеющей электронные схемы, размещенные под упомянутой площадкой. ! 10. Соединение по п.1, в котором соединение сконфигурировано как одно из множества �

Claims (18)

1. Электрическое соединение по методу перевернутого кристалла между первым и вторым электрическими компонентами (250, 260), включающее в себя
выступ (210), имеющий первую и вторую электрически соединяющиеся поверхности (214, 215), где первая соединяющаяся поверхность (214) выступа (210) электрически соединена с первым электрическим компонентом (250); и
площадку (220), имеющую первую и вторую электрически соединяющиеся поверхности (224, 228), где первая соединяющаяся поверхность (224) площадки (220) электрически соединена со вторым электрическим компонентом (260), а вторая электрически соединяющаяся поверхность (228) площадки (220) электрически соединена и по размерам меньше, чем вторая электрически соединяющаяся поверхность (215) выступа (210).
2. Соединение по п.1, в котором выступ (210) является столбиковым выступом.
3. Соединение по п.1, в котором выступ (210) является шариковым выступом.
4. Соединение по п.1, в котором выступ (210) сконфигурирован с высотой выступа в диапазоне 50-150 мкм.
5. Соединение по п.1, в котором первая соединяющаяся поверхность (214) выступа (210) имеет диаметр в диапазоне 50-120 мкм.
6. Соединение по п.1, в котором площадка (220) сконфигурирована, имеющей диаметр в диапазоне 10-70 мкм.
7. Соединение по п.1, в котором первый электрический компонент (250) является акустическим элементом.
8. Соединение по п.1, в котором второй электрический компонент (260) является специализированной интегральной схемой (ASIC).
9. Соединение по п.8, в котором специализированная интегральная схема (ASIC) сконфигурирована имеющей электронные схемы, размещенные под упомянутой площадкой.
10. Соединение по п.1, в котором соединение сконфигурировано как одно из множества электрических соединений, расположенных с шагом менее 150 мкм.
11. Способ образования электрического соединения по методу перевернутого кристалла между первым и вторым электрическими компонентами (250, 260), содержащий следующие шаги:
соединяют часть выступа (210) с первым электрическим компонентом (250);
соединяют часть площадки (220) со вторым электрическим компонентом (260); и
соединяют часть выступа (210) с частью площадки (220), причем поверхность (228) части площадки (220), которая соединена с частью выступа (210), меньшего размера, чем соответствующая соединяющаяся поверхность (215) части выступа (210).
12. Способ по п.11, включающий в себя процесс формирования части выступа (210) как части выступа столбиковой формы.
13. Способ по п.11, включающий в себя шаг изготовления части выступа (210), имеющего высоту в диапазоне 50-150 мкм и поверхность (214), соединяющуюся с первым электрическим компонентом (250), имеющую диаметр в диапазоне 50-120 мкм.
14. Способ по п.11, включающий в себя шаг формирования части площадки (220), имеющей диаметр в диапазоне 10-70 мкм.
15. Способ по п.11, в котором шаг соединения части выступа (210) с площадкой (220) выполняется с использованием метода соединения при низкой температуре и низком сваривающем давлении.
16. Способ по п.15, в котором метод соединения при низкой температуре и низком связывающем давлении является ультразвуковой сварки головки выступа.
17. Способ по п.11, включающий в себя шаг формирования электрического соединения по методу перевернутого кристалла как одного из множества электрических соединений, в шаговом расположении менее, чем 150 мкм.
18. Способ по п.11, в котором шаг соединения части выступа (210) с частью площадки (220) выполняется с использованием проводящей эпоксидной смолы.
RU2009102208/28A 2006-06-26 2007-06-20 Межсоединение методом перевернутого кристалла на основе сформированных соединений RU2441298C2 (ru)

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