KR930000914B1 - Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 - Google Patents
Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 Download PDFInfo
- Publication number
- KR930000914B1 KR930000914B1 KR1019900000951A KR900000951A KR930000914B1 KR 930000914 B1 KR930000914 B1 KR 930000914B1 KR 1019900000951 A KR1019900000951 A KR 1019900000951A KR 900000951 A KR900000951 A KR 900000951A KR 930000914 B1 KR930000914 B1 KR 930000914B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- well
- over flow
- forming
- ccd imaging
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000003384 imaging method Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims abstract 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 235000014653 Carica parviflora Nutrition 0.000 claims 1
- 241000243321 Cnidaria Species 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음.
Description
제1도와 제2도는 종래의 공정순서도
제3도는 종래의 동작설명도
제4도는 본 발명의 공정순서도
* 도면의 주요부분에 대한 부호의 설명
1 : N-기판 2 : 산화막
3 : P-에피택셜 4 : N-PD
5 : N-웰
본 발명은 CCD(Charge Coupled Device) 영상센서와 포토 다이오드(이하˝PD˝라 한다.) 의 OFD(Over Flow Drain) 억제를 위한 방법에 관한 것이다.
일반적으로 CCD 영상센서 중 PD 부분의 크로스 섹션은 제1도 혹은 제2도와 같이 구성되면 먼저 제1도의 (a)와 같이 제조되는 CCD 영상센서의 공정순서는 (b)와 같다.
즉, (a)처럼 N-기판(1)위에 P-웰(6)과 산화막(2)을 형성하고 (b)처럼 인(p) 이온주입으로 P+영역을 형성한후 (c)처럼 N-PD(4)와 N-웰(5)을 형성하며 (d)처럼 폴리실리콘(7)과 알루미늄(Al)(8)을 형성하였다.
그러나 상기의 경우 N-PD(4) 밑에 하트모향(
)으로 만든 P-웰(6)의 깊이 조정이 어려워 공정이 안정성이 없었다.
한편, 제2도의 (a)와 같이 제조되는 CCD 영상센서의 실시예에 있어서는 (b)의 (a)와 같이 N-기판(1)위에 얕은 P-웰(9)과 산화막(2)을 형성하고 상기 얕은 P-웰(9) 주위에 (b)와 같이 다시 깊은 P-웰(10)을 형성하므로 상기의 하트모향(
)대신 평탄한 모향(
)의 P-웰을 형성하였으며 전술한 바와 같은 제1도에서의 과정(c)(d)(e)을 거친 후 결국(a)와 같이 제조하여 제1도의 공정에 비해 재연성을 증가시키게 하였으나 이는 공정단계가 늘어나는 문제가 있다.
이하에서 종래의 동작을 제3도를 참고로 하여 설명하면, N-PD(4)에 전자가 축적되면 a와 같이 N-PD(4)에 V1만큼의 포텐셜이 발생하면 N-PD(4)에 있는 전자들이 VCCD로 빠져 나갔다.
상기와 같은 종래의 문제점은 불순물 농도가 N-Sub〈P-웰〈N-PD순으로 되어야 하므로 N-PD(4)의 농도가 높아져 빛에 의해서 형성된 전자들이 N영역에서 바로 재 결합될 가능성이 있었고, P-웰 공정이 어려우면서도 조건을 맞추기 힘들어 결국 OFD 조건을 맞추기가 어려웠다.
본 발명은 상기와 같은 종래의 결점을 감안하여 안출한 것으로 PD부분을 개선하여 기존에 사용되고 있는 P-웰 공정 대신에 P-에피텍셜 공정을 이용하므로써 PD부분의 공정을 단순화 시키고자 한 것인 바, 이를 첨부된 도면에 의하여 상술하면 다음과 같다.
먼저 제4도의 (a)는 본 발명에 의해 제조된 CCD 영상센서의 단면도로 이의 공정순서를 설명하면 다음과 같다.
즉, 제4도의 (b)의 (a)와 같이 OFD 조절을 위해 제1도전형인 N-기판(1)위에 산화막(2)을 형성하고 N+이온주입을 한다.
그리고 (b)와 같이 N+이온주입을 한 상태에서 P-에피택셜(3)을 성장시키고 (c)와 같이 P+이온주입 공정을 실시한 후 소자격리용 산화막(LOCOS)을 형성한다.
다음에 (d)와 같이 이온주입 공정을 위해 N-PD(4)와 VCCD용 N-웰(5)을 형성한다.
이렇게 하여 형성된 (d)의 a-a선 단면의 포텐셜 프로파일이 제4도의 (c)와 같이 나타난다.
즉, N+주입농도에 따라 점선과 실선처럼 N-PD(4)에서 넘친 전하를 빼는 기울기의 완급을 조절할 수 있다.
만일, N+주입농도가 높으면 경사가 급해 N-PD(4)에서 넘친 전하를 빼내는 속도가 실선처럼 빨라 디프리선(Depletion) 영역을 줄일 수 있으며 N+주입농도가 낮으면 넘친 전하의 빠지는 속도가 점선처럼 완만하게 된다.
즉, PD의 N영역 농도 가변의 폭이 커 이 폭을 조절하여 OFD 조건을 용이하게 맞출 수가 있다.
다시 말해서 N-기판(1)에 종래와 같이 P-웰을 형성하는 대신 P-에피택셜(3)을 형성하므로써 전하 전송되는 CCD 부분의 불순물 농도분포가 P-기판 보다 균일하게 화상특성이 양호해지며 최근 균일성(Uniformity) 문제로 많이 사용되고 있는 N-기판/N--에피택셜/P-웰공정과 거의 동일한 효과를 얻을 수 있다.
또한, PD의 N영역 및 그 밑의 기판농도를 임의로 바꿀 수 있어 PD 최적화 하기가 쉬우며 종래의 P-웰 공정을 생략할 수 있는 장점이 있다.
Claims (1)
- N-기판(1) 위에 산호막(2)을 형성하고 N+이온을 주입하는 단계와, 상기 N+이온이 주입된 기판(1)위에 P-에피택셜(3)을 성장시키는 단계와, P+이온주입을 실시하고 소자격리용 산화막을 형성하는 단계와, 이온주입 공정에 의해 N-PD(4)와 VCCD용 N-웰(5)을 형성하는 단계를 포함하여서 이루어짐을 특징으로 하는 CCD 영상 센서에서 포토다이오드의 OFD 억제를 위한 방법.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
| NL9100082A NL9100082A (nl) | 1990-01-29 | 1991-01-17 | Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor. |
| GB9101669A GB2240429A (en) | 1990-01-29 | 1991-01-25 | Method for manufacturing a photo diode for a CCD image sensor |
| DE4102591A DE4102591A1 (de) | 1990-01-29 | 1991-01-29 | Verfahren zum herstellen einer photodiode fuer einen ccd-bildwandler |
| JP3026788A JPH04212460A (ja) | 1990-01-29 | 1991-01-29 | Ｃｃｄイメージセンサーにおけるフォトダイオードの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910015076A KR910015076A (ko) | 1991-08-31 |
| KR930000914B1 true KR930000914B1 (ko) | 1993-02-11 |
Family
ID=19295572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH04212460A (ko) |
| KR (1) | KR930000914B1 (ko) |
| DE (1) | DE4102591A1 (ko) |
| GB (1) | GB2240429A (ko) |
| NL (1) | NL9100082A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3311004B2 (ja) * | 1991-03-28 | 2002-08-05 | 株式会社東芝 | 固体撮像装置 |
| US6580139B1 (en) * | 2000-07-20 | 2003-06-17 | Emcore Corporation | Monolithically integrated sensing device and method of manufacture |
| US6852565B1 (en) * | 2003-07-10 | 2005-02-08 | Galaxcore, Inc. | CMOS image sensor with substrate noise barrier |
| US7388187B1 (en) * | 2007-03-06 | 2008-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cross-talk reduction through deep pixel well implant for image sensors |
| CN109817736A (zh) * | 2019-01-23 | 2019-05-28 | 杭州电子科技大学 | 一种串扰抑制和辐射加固的像素探测器 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5755672A (en) * | 1980-09-19 | 1982-04-02 | Nec Corp | Solid-state image pickup device and its driving method |
| JPH0828496B2 (ja) * | 1987-03-31 | 1996-03-21 | 株式会社東芝 | 固体撮像装置 |
-
1990
- 1990-01-29 KR KR1019900000951A patent/KR930000914B1/ko not_active IP Right Cessation
-
1991
- 1991-01-17 NL NL9100082A patent/NL9100082A/nl not_active Application Discontinuation
- 1991-01-25 GB GB9101669A patent/GB2240429A/en not_active Withdrawn
- 1991-01-29 JP JP3026788A patent/JPH04212460A/ja active Pending
- 1991-01-29 DE DE4102591A patent/DE4102591A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| GB9101669D0 (en) | 1991-03-06 |
| NL9100082A (nl) | 1991-08-16 |
| KR910015076A (ko) | 1991-08-31 |
| DE4102591A1 (de) | 1991-08-01 |
| GB2240429A (en) | 1991-07-31 |
| JPH04212460A (ja) | 1992-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3896485A (en) | Charge-coupled device with overflow protection | |
| US4984047A (en) | Solid-state image sensor | |
| KR100259063B1 (ko) | Ccd 영상소자 | |
| CN101211833B (zh) | Cmos图像传感器及其制造方法 | |
| US4435897A (en) | Method for fabricating solid-state image sensor | |
| KR930000914B1 (ko) | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 | |
| US4947224A (en) | Solid state image sensing device with photodiode to reduce smearing | |
| KR100255410B1 (ko) | 금속 접점 및 베이스 영역으로의 증가된 용량성 결합을 갖는바이폴라계 능동 화소 센서 셀 | |
| US5621231A (en) | Solid-state imager | |
| RU2025830C1 (ru) | Структура формирователя сигналов изображений на приборе, с зарядовой связью и способ изготовления формирователя сигналов изображения на приборе с зарядовой связью | |
| US6774444B2 (en) | Semiconductor, solid-state imaging device, and method for making the same | |
| US5276341A (en) | Structure for fabrication of a CCD image sensor | |
| KR940008027B1 (ko) | Ccd 고체촬상소자 및 그 제조방법 | |
| KR0140634B1 (ko) | 고체촬상소자의 제조방법 | |
| KR100262006B1 (ko) | 고체촬상소자 및 그 제조방법 | |
| KR920005038Y1 (ko) | 고체 촬영소자의 단위 화소 | |
| KR940008263B1 (ko) | 노이즈 감소형 ccd 구조 | |
| KR930000884B1 (ko) | 포토다이오드 | |
| JP2586571B2 (ja) | 固体撮像素子 | |
| JP4310845B2 (ja) | 固体撮像素子及びその製造方法 | |
| KR940003602B1 (ko) | 안티-블루밍 구조의 전하 결합소자 및 그 제조방법 | |
| US9685479B2 (en) | Method of forming a shallow pinned photodiode | |
| KR0136926B1 (ko) | 고체촬상소자 제조방법 | |
| JPH02218132A (ja) | 半導体装置の製造方法 | |
| JPH05267638A (ja) | 固体撮像装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030120 Year of fee payment: 11 |
|
| LAPS | Lapse due to unpaid annual fee |