NL9100082A - Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor. - Google Patents

Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor. Download PDF

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Publication number
NL9100082A
NL9100082A NL9100082A NL9100082A NL9100082A NL 9100082 A NL9100082 A NL 9100082A NL 9100082 A NL9100082 A NL 9100082A NL 9100082 A NL9100082 A NL 9100082A NL 9100082 A NL9100082 A NL 9100082A
Authority
NL
Netherlands
Prior art keywords
type
photodiode
image sensor
ccd image
substrate
Prior art date
Application number
NL9100082A
Other languages
English (en)
Dutch (nl)
Original Assignee
Gold Star Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Electronics filed Critical Gold Star Electronics
Publication of NL9100082A publication Critical patent/NL9100082A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
NL9100082A 1990-01-29 1991-01-17 Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor. NL9100082A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR900000951 1990-01-29
KR1019900000951A KR930000914B1 (ko) 1990-01-29 1990-01-29 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법

Publications (1)

Publication Number Publication Date
NL9100082A true NL9100082A (nl) 1991-08-16

Family

ID=19295572

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9100082A NL9100082A (nl) 1990-01-29 1991-01-17 Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor.

Country Status (5)

Country Link
JP (1) JPH04212460A (ko)
KR (1) KR930000914B1 (ko)
DE (1) DE4102591A1 (ko)
GB (1) GB2240429A (ko)
NL (1) NL9100082A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311004B2 (ja) * 1991-03-28 2002-08-05 株式会社東芝 固体撮像装置
US6580139B1 (en) * 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
US6852565B1 (en) * 2003-07-10 2005-02-08 Galaxcore, Inc. CMOS image sensor with substrate noise barrier
US7388187B1 (en) * 2007-03-06 2008-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cross-talk reduction through deep pixel well implant for image sensors
CN109817736A (zh) * 2019-01-23 2019-05-28 杭州电子科技大学 一种串扰抑制和辐射加固的像素探测器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755672A (en) * 1980-09-19 1982-04-02 Nec Corp Solid-state image pickup device and its driving method
JPH0828496B2 (ja) * 1987-03-31 1996-03-21 株式会社東芝 固体撮像装置

Also Published As

Publication number Publication date
KR910015076A (ko) 1991-08-31
GB2240429A (en) 1991-07-31
GB9101669D0 (en) 1991-03-06
DE4102591A1 (de) 1991-08-01
JPH04212460A (ja) 1992-08-04
KR930000914B1 (ko) 1993-02-11

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