KR910015076A - Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한 방법 - Google Patents
Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한 방법 Download PDFInfo
- Publication number
- KR910015076A KR910015076A KR1019900000951A KR900000951A KR910015076A KR 910015076 A KR910015076 A KR 910015076A KR 1019900000951 A KR1019900000951 A KR 1019900000951A KR 900000951 A KR900000951 A KR 900000951A KR 910015076 A KR910015076 A KR 910015076A
- Authority
- KR
- South Korea
- Prior art keywords
- ofd
- photodiode
- suppressing
- image sensor
- ccd image
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 공정순서도.
Claims (1)
- N-기판(1)위에 산화막(2)을 형성하는 N+이온주입을 한후 P-에피택셜(3)을 성장시키며 N-PD(4)와 N-웰(5)을 형성하여 PD의 특성을 용이하게 맞출수 있게 함을 특징으로 하는 CCD영상센서에서 포토 다이오드의 OFD 억제을 위한 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
NL9100082A NL9100082A (nl) | 1990-01-29 | 1991-01-17 | Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor. |
GB9101669A GB2240429A (en) | 1990-01-29 | 1991-01-25 | Method for manufacturing a photo diode for a CCD image sensor |
DE4102591A DE4102591A1 (de) | 1990-01-29 | 1991-01-29 | Verfahren zum herstellen einer photodiode fuer einen ccd-bildwandler |
JP3026788A JPH04212460A (ja) | 1990-01-29 | 1991-01-29 | Ccdイメージセンサーにおけるフォトダイオードの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910015076A true KR910015076A (ko) | 1991-08-31 |
KR930000914B1 KR930000914B1 (ko) | 1993-02-11 |
Family
ID=19295572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900000951A KR930000914B1 (ko) | 1990-01-29 | 1990-01-29 | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH04212460A (ko) |
KR (1) | KR930000914B1 (ko) |
DE (1) | DE4102591A1 (ko) |
GB (1) | GB2240429A (ko) |
NL (1) | NL9100082A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3311004B2 (ja) * | 1991-03-28 | 2002-08-05 | 株式会社東芝 | 固体撮像装置 |
US6580139B1 (en) * | 2000-07-20 | 2003-06-17 | Emcore Corporation | Monolithically integrated sensing device and method of manufacture |
US6852565B1 (en) * | 2003-07-10 | 2005-02-08 | Galaxcore, Inc. | CMOS image sensor with substrate noise barrier |
US7388187B1 (en) * | 2007-03-06 | 2008-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cross-talk reduction through deep pixel well implant for image sensors |
CN109817736A (zh) * | 2019-01-23 | 2019-05-28 | 杭州电子科技大学 | 一种串扰抑制和辐射加固的像素探测器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5755672A (en) * | 1980-09-19 | 1982-04-02 | Nec Corp | Solid-state image pickup device and its driving method |
JPH0828496B2 (ja) * | 1987-03-31 | 1996-03-21 | 株式会社東芝 | 固体撮像装置 |
-
1990
- 1990-01-29 KR KR1019900000951A patent/KR930000914B1/ko not_active IP Right Cessation
-
1991
- 1991-01-17 NL NL9100082A patent/NL9100082A/nl not_active Application Discontinuation
- 1991-01-25 GB GB9101669A patent/GB2240429A/en not_active Withdrawn
- 1991-01-29 JP JP3026788A patent/JPH04212460A/ja active Pending
- 1991-01-29 DE DE4102591A patent/DE4102591A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
GB2240429A (en) | 1991-07-31 |
GB9101669D0 (en) | 1991-03-06 |
DE4102591A1 (de) | 1991-08-01 |
NL9100082A (nl) | 1991-08-16 |
JPH04212460A (ja) | 1992-08-04 |
KR930000914B1 (ko) | 1993-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5236917A (en) | Solid pickup body | |
KR910015076A (ko) | Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한 방법 | |
KR920008947A (ko) | Npn형 vccd 구조의 고체 촬상소자 | |
JPS5389617A (en) | Driving method of solid image pickup element | |
ATE183385T1 (de) | Lyopilisierte, wirkstoffhaltige emulsion | |
JPS5268307A (en) | Lihgt scanner | |
JPS51134512A (en) | Photoelectric conversion scanning circuit of facsimile unit | |
JPS533018A (en) | Solid pickup element | |
JPS5243318A (en) | Solid image photoing body | |
JPS5244297A (en) | Manufacture of special alcoholic beverage | |
JPS5311519A (en) | Buried cahnnel type solic pickup unit of frame transfer system | |
JPS5440037A (en) | Optical character reader | |
JPS52143712A (en) | Tv static picture transmission system | |
JPS538015A (en) | Pick up system with charge coupled element | |
JPS542682A (en) | Manufacture of mos-type integrated circuit | |
JPS5230313A (en) | Transmission/reception method which uses the second dimension sensitive material | |
KR890005897A (ko) | 더블 플랫 p-웰 구조의 고체영상소자 | |
KR880002248A (ko) | 이온 주입방법 | |
JPS5238024A (en) | Cockroach attractant | |
JPS5338973A (en) | Lead frame | |
JPS52119128A (en) | Reader for pictures and writings | |
KR920007240A (ko) | 포토디텍터 제조방법 | |
JPS5296871A (en) | Manufacture of mos type transistor | |
KR920005360A (ko) | 메모리 소자의 ldd구조 형성방법 | |
JPS51112130A (en) | Optical reading device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030120 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |