KR910016236A - 반도체 집적회로 - Google Patents

반도체 집적회로

Info

Publication number
KR910016236A
KR910016236A KR1019900001235A KR900001235A KR910016236A KR 910016236 A KR910016236 A KR 910016236A KR 1019900001235 A KR1019900001235 A KR 1019900001235A KR 900001235 A KR900001235 A KR 900001235A KR 910016236 A KR910016236 A KR 910016236A
Authority
KR
South Korea
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Application number
KR1019900001235A
Other languages
English (en)
Other versions
KR930006843B1 (ko
Inventor
가쯔미 오기우에
유끼오 스즈끼
이꾸로 마스다
마사노리 오다까
히데아끼 우찌다
Original Assignee
가부시끼 가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼 가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼 가이샤 히다찌세이사꾸쇼
Priority to KR1019900001235A priority Critical patent/KR930006843B1/ko
Publication of KR910016236A publication Critical patent/KR910016236A/ko
Application granted granted Critical
Publication of KR930006843B1 publication Critical patent/KR930006843B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
KR1019900001235A 1984-02-13 1990-02-02 반도체 집적회로 KR930006843B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900001235A KR930006843B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP84-22811 1984-02-13
JP59022811A JPH0795395B2 (ja) 1984-02-13 1984-02-13 半導体集積回路
KR1019850000721A KR930006841B1 (ko) 1984-02-13 1985-02-05 반도체 집적회로
KR1019900001235A KR930006843B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1019850000721A Division KR930006841B1 (ko) 1984-02-13 1985-02-05 반도체 집적회로

Publications (2)

Publication Number Publication Date
KR910016236A true KR910016236A (ko) 1991-09-30
KR930006843B1 KR930006843B1 (ko) 1993-07-24

Family

ID=12093073

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1019850000721A KR930006841B1 (ko) 1984-02-13 1985-02-05 반도체 집적회로
KR1019900001233D KR910016234A (ko) 1984-02-13 1990-02-02 반도체 집적회로
KR1019900001233A KR930000712B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로
KR1019900001235A KR930006843B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로
KR1019900001234A KR930006842B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로

Family Applications Before (3)

Application Number Title Priority Date Filing Date
KR1019850000721A KR930006841B1 (ko) 1984-02-13 1985-02-05 반도체 집적회로
KR1019900001233D KR910016234A (ko) 1984-02-13 1990-02-02 반도체 집적회로
KR1019900001233A KR930000712B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019900001234A KR930006842B1 (ko) 1984-02-13 1990-02-02 반도체 집적회로

Country Status (7)

Country Link
US (6) US4713796A (ko)
JP (1) JPH0795395B2 (ko)
KR (5) KR930006841B1 (ko)
DE (1) DE3504930A1 (ko)
GB (3) GB2156616B (ko)
HK (3) HK42090A (ko)
SG (1) SG36390G (ko)

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US5140550A (en) * 1987-03-16 1992-08-18 Hitachi Ltd. Semiconductor memory device
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JP3109750B2 (ja) * 1991-06-27 2000-11-20 株式会社東芝 半導体記憶装置
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Also Published As

Publication number Publication date
KR850006234A (ko) 1985-10-02
US4858189A (en) 1989-08-15
KR930006842B1 (ko) 1993-07-24
HK94890A (en) 1990-11-23
GB8714910D0 (en) 1987-07-29
KR910016234A (ko) 1991-09-30
GB2156616B (en) 1988-04-27
HK42090A (en) 1990-06-08
KR930000712B1 (ko) 1993-01-30
KR930006843B1 (ko) 1993-07-24
KR910016235A (ko) 1991-09-30
SG36390G (en) 1990-07-13
DE3504930A1 (de) 1985-08-14
US5311482A (en) 1994-05-10
US4924439A (en) 1990-05-08
GB2156616A (en) 1985-10-09
KR930006841B1 (ko) 1993-07-24
US5042010A (en) 1991-08-20
GB8503310D0 (en) 1985-03-13
US4713796A (en) 1987-12-15
GB8714911D0 (en) 1987-07-29
GB2189958B (en) 1988-04-27
GB2189958A (en) 1987-11-04
US5371713A (en) 1994-12-06
HK44990A (en) 1990-06-15
GB2189957B (en) 1988-04-27
JPH0795395B2 (ja) 1995-10-11
JPS60170090A (ja) 1985-09-03
GB2189957A (en) 1987-11-04

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