KR860005445A - Mos형 집적회로 - Google Patents

Mos형 집적회로

Info

Publication number
KR860005445A
KR860005445A KR1019850005211A KR850005211A KR860005445A KR 860005445 A KR860005445 A KR 860005445A KR 1019850005211 A KR1019850005211 A KR 1019850005211A KR 850005211 A KR850005211 A KR 850005211A KR 860005445 A KR860005445 A KR 860005445A
Authority
KR
South Korea
Prior art keywords
integrated circuit
mos type
type integrated
mos
circuit
Prior art date
Application number
KR1019850005211A
Other languages
English (en)
Other versions
KR900000179B1 (ko
Inventor
히로유끼 기노시다
Original Assignee
가부시끼가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR860005445A publication Critical patent/KR860005445A/ko
Application granted granted Critical
Publication of KR900000179B1 publication Critical patent/KR900000179B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019850005211A 1984-12-06 1985-07-22 Mos형 집적회로 KR900000179B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59257928A JPS61135149A (ja) 1984-12-06 1984-12-06 Ｍｏｓ型集積回路
JP59-257928 1984-12-06

Publications (2)

Publication Number Publication Date
KR860005445A true KR860005445A (ko) 1986-07-23
KR900000179B1 KR900000179B1 (ko) 1990-01-23

Family

ID=17313139

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850005211A KR900000179B1 (ko) 1984-12-06 1985-07-22 Mos형 집적회로

Country Status (5)

Country Link
US (1) US4721990A (ko)
EP (1) EP0184222B1 (ko)
JP (1) JPS61135149A (ko)
KR (1) KR900000179B1 (ko)
DE (1) DE3581789D1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
JPH084112B2 (ja) * 1986-06-25 1996-01-17 株式会社東芝 Ｍｏｓ型半導体装置
US5338693A (en) * 1987-01-08 1994-08-16 International Rectifier Corporation Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
JPS63262873A (ja) * 1987-04-21 1988-10-31 Fuji Xerox Co Ltd 半導体装置
CA1309781C (en) * 1988-06-21 1992-11-03 Colin Harris Compact cmos analog crosspoint switch matrix
US6043538A (en) * 1993-09-30 2000-03-28 Intel Corporation Device structure for high voltage tolerant transistor on a 3.3 volt process
US5589790A (en) * 1995-06-30 1996-12-31 Intel Corporation Input structure for receiving high voltage signals on a low voltage integrated circuit device
US5831318A (en) * 1996-07-25 1998-11-03 International Rectifier Corporation Radhard mosfet with thick gate oxide and deep channel region
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
JPS58158972A (ja) * 1982-03-16 1983-09-21 Toshiba Corp 半導体装置の製造方法
JPS59121976A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0184222A3 (en) 1987-01-28
EP0184222A2 (en) 1986-06-11
US4721990A (en) 1988-01-26
DE3581789D1 (de) 1991-03-28
KR900000179B1 (ko) 1990-01-23
JPS61135149A (ja) 1986-06-23
EP0184222B1 (en) 1991-02-20

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20021231

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee