KR900008676A - 불휘발성 반도체메모리 - Google Patents
불휘발성 반도체메모리Info
- Publication number
- KR900008676A KR900008676A KR1019890016829A KR890016829A KR900008676A KR 900008676 A KR900008676 A KR 900008676A KR 1019890016829 A KR1019890016829 A KR 1019890016829A KR 890016829 A KR890016829 A KR 890016829A KR 900008676 A KR900008676 A KR 900008676A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- volatile semiconductor
- volatile
- memory
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-294185 | 1988-11-21 | ||
JP29418588A JPH0713880B2 (ja) | 1988-11-21 | 1988-11-21 | 不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900008676A true KR900008676A (ko) | 1990-06-03 |
KR930000159B1 KR930000159B1 (ko) | 1993-01-09 |
Family
ID=17804414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890016829A KR930000159B1 (ko) | 1988-11-21 | 1989-11-20 | 불휘발성 반도체메모리 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5031149A (ko) |
EP (1) | EP0370308B1 (ko) |
JP (1) | JPH0713880B2 (ko) |
KR (1) | KR930000159B1 (ko) |
DE (1) | DE68915123T2 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930002574B1 (ko) * | 1990-03-09 | 1993-04-03 | 금성일렉트론 주식회사 | 워드라인 구동회로 |
US5214602A (en) * | 1990-04-06 | 1993-05-25 | Mosaid Inc. | Dynamic memory word line driver scheme |
US5751643A (en) * | 1990-04-06 | 1998-05-12 | Mosaid Technologies Incorporated | Dynamic memory word line driver |
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
GB9007790D0 (en) | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
JP2679381B2 (ja) * | 1990-08-30 | 1997-11-19 | 日本電気株式会社 | 半導体記憶集積回路 |
US5274600A (en) * | 1990-12-13 | 1993-12-28 | Texas Instruments Incorporated | First-in first-out memory |
US5202855A (en) * | 1991-01-14 | 1993-04-13 | Motorola, Inc. | DRAM with a controlled boosted voltage level shifting driver |
JPH05128866A (ja) * | 1991-10-31 | 1993-05-25 | Toshiba Corp | ランダムアクセスメモリの書き込み、読出し制御回路 |
US5285407A (en) * | 1991-12-31 | 1994-02-08 | Texas Instruments Incorporated | Memory circuit for spatial light modulator |
JP2708333B2 (ja) * | 1992-09-02 | 1998-02-04 | 株式会社東芝 | レベルシフタ回路 |
US5644533A (en) * | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
JP3743453B2 (ja) * | 1993-01-27 | 2006-02-08 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
JP3085824B2 (ja) * | 1993-05-20 | 2000-09-11 | 富士写真フイルム株式会社 | メモリ制御装置 |
US5511026A (en) * | 1993-12-01 | 1996-04-23 | Advanced Micro Devices, Inc. | Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories |
US5450357A (en) * | 1994-04-01 | 1995-09-12 | Texas Instruments Incorporated | Level shifter circuit |
JPH08241240A (ja) * | 1995-03-03 | 1996-09-17 | Toshiba Corp | コンピュータシステム |
KR100560653B1 (ko) * | 2003-02-10 | 2006-03-16 | 삼성전자주식회사 | 듀얼 절연막 체계를 갖는 반도체 집적 회로 장치 |
JP2006196061A (ja) * | 2005-01-12 | 2006-07-27 | Toshiba Corp | 電圧切換回路、及びこれを用いた半導体記憶装置 |
US7729155B2 (en) * | 2005-12-30 | 2010-06-01 | Stmicroelectronics Pvt. Ltd. | High speed, low power, low leakage read only memory |
US8064255B2 (en) | 2007-12-31 | 2011-11-22 | Cypress Semiconductor Corporation | Architecture of a nvDRAM array and its sense regime |
US8059458B2 (en) * | 2007-12-31 | 2011-11-15 | Cypress Semiconductor Corporation | 3T high density nvDRAM cell |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289982A (en) * | 1979-06-28 | 1981-09-15 | Motorola, Inc. | Apparatus for programming a dynamic EPROM |
US4433257A (en) * | 1980-03-03 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells |
JPS57192067A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Erasable and programmable read only memory unit |
US4446536A (en) * | 1982-06-21 | 1984-05-01 | Mcdonnell Douglas Corporation | Complementary metal oxide semiconductors address drive circuit |
JPS61151898A (ja) * | 1984-12-26 | 1986-07-10 | Fujitsu Ltd | 半導体記憶装置におけるワ−ド線ドライバ回路 |
US4642798A (en) * | 1985-10-01 | 1987-02-10 | Intel Corporation | CMOS E2 PROM decoding circuit |
-
1988
- 1988-11-21 JP JP29418588A patent/JPH0713880B2/ja not_active Expired - Lifetime
-
1989
- 1989-10-24 US US07/425,947 patent/US5031149A/en not_active Expired - Lifetime
- 1989-11-08 DE DE68915123T patent/DE68915123T2/de not_active Expired - Fee Related
- 1989-11-08 EP EP89120700A patent/EP0370308B1/en not_active Expired - Lifetime
- 1989-11-20 KR KR1019890016829A patent/KR930000159B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE68915123T2 (de) | 1994-09-15 |
EP0370308A3 (en) | 1992-03-04 |
JPH02141994A (ja) | 1990-05-31 |
KR930000159B1 (ko) | 1993-01-09 |
DE68915123D1 (de) | 1994-06-09 |
US5031149A (en) | 1991-07-09 |
EP0370308A2 (en) | 1990-05-30 |
EP0370308B1 (en) | 1994-05-04 |
JPH0713880B2 (ja) | 1995-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |