KR900008676A - 불휘발성 반도체메모리 - Google Patents

불휘발성 반도체메모리

Info

Publication number
KR900008676A
KR900008676A KR1019890016829A KR890016829A KR900008676A KR 900008676 A KR900008676 A KR 900008676A KR 1019890016829 A KR1019890016829 A KR 1019890016829A KR 890016829 A KR890016829 A KR 890016829A KR 900008676 A KR900008676 A KR 900008676A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Application number
KR1019890016829A
Other languages
English (en)
Other versions
KR930000159B1 (ko
Inventor
오사무 마츠모토
유지 나카노
이사오 아베
미카 사에키
Original Assignee
가부시키가이샤 도시바
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 가부시키가이샤 도시바
Publication of KR900008676A publication Critical patent/KR900008676A/ko
Application granted granted Critical
Publication of KR930000159B1 publication Critical patent/KR930000159B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019890016829A 1988-11-21 1989-11-20 불휘발성 반도체메모리 KR930000159B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-294185 1988-11-21
JP29418588A JPH0713880B2 (ja) 1988-11-21 1988-11-21 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
KR900008676A true KR900008676A (ko) 1990-06-03
KR930000159B1 KR930000159B1 (ko) 1993-01-09

Family

ID=17804414

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016829A KR930000159B1 (ko) 1988-11-21 1989-11-20 불휘발성 반도체메모리

Country Status (5)

Country Link
US (1) US5031149A (ko)
EP (1) EP0370308B1 (ko)
JP (1) JPH0713880B2 (ko)
KR (1) KR930000159B1 (ko)
DE (1) DE68915123T2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002574B1 (ko) * 1990-03-09 1993-04-03 금성일렉트론 주식회사 워드라인 구동회로
US5214602A (en) * 1990-04-06 1993-05-25 Mosaid Inc. Dynamic memory word line driver scheme
US5751643A (en) * 1990-04-06 1998-05-12 Mosaid Technologies Incorporated Dynamic memory word line driver
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
JP2679381B2 (ja) * 1990-08-30 1997-11-19 日本電気株式会社 半導体記憶集積回路
US5274600A (en) * 1990-12-13 1993-12-28 Texas Instruments Incorporated First-in first-out memory
US5202855A (en) * 1991-01-14 1993-04-13 Motorola, Inc. DRAM with a controlled boosted voltage level shifting driver
JPH05128866A (ja) * 1991-10-31 1993-05-25 Toshiba Corp ランダムアクセスメモリの書き込み、読出し制御回路
US5285407A (en) * 1991-12-31 1994-02-08 Texas Instruments Incorporated Memory circuit for spatial light modulator
JP2708333B2 (ja) * 1992-09-02 1998-02-04 株式会社東芝 レベルシフタ回路
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3085824B2 (ja) * 1993-05-20 2000-09-11 富士写真フイルム株式会社 メモリ制御装置
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories
US5450357A (en) * 1994-04-01 1995-09-12 Texas Instruments Incorporated Level shifter circuit
JPH08241240A (ja) * 1995-03-03 1996-09-17 Toshiba Corp コンピュータシステム
KR100560653B1 (ko) * 2003-02-10 2006-03-16 삼성전자주식회사 듀얼 절연막 체계를 갖는 반도체 집적 회로 장치
JP2006196061A (ja) * 2005-01-12 2006-07-27 Toshiba Corp 電圧切換回路、及びこれを用いた半導体記憶装置
US7729155B2 (en) * 2005-12-30 2010-06-01 Stmicroelectronics Pvt. Ltd. High speed, low power, low leakage read only memory
US8064255B2 (en) 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289982A (en) * 1979-06-28 1981-09-15 Motorola, Inc. Apparatus for programming a dynamic EPROM
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
US4446536A (en) * 1982-06-21 1984-05-01 Mcdonnell Douglas Corporation Complementary metal oxide semiconductors address drive circuit
JPS61151898A (ja) * 1984-12-26 1986-07-10 Fujitsu Ltd 半導体記憶装置におけるワ−ド線ドライバ回路
US4642798A (en) * 1985-10-01 1987-02-10 Intel Corporation CMOS E2 PROM decoding circuit

Also Published As

Publication number Publication date
DE68915123T2 (de) 1994-09-15
EP0370308A3 (en) 1992-03-04
JPH02141994A (ja) 1990-05-31
KR930000159B1 (ko) 1993-01-09
DE68915123D1 (de) 1994-06-09
US5031149A (en) 1991-07-09
EP0370308A2 (en) 1990-05-30
EP0370308B1 (en) 1994-05-04
JPH0713880B2 (ja) 1995-02-15

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