KR900006986A - 반도체메모리 - Google Patents

반도체메모리

Info

Publication number
KR900006986A
KR900006986A KR1019890015585A KR890015585A KR900006986A KR 900006986 A KR900006986 A KR 900006986A KR 1019890015585 A KR1019890015585 A KR 1019890015585A KR 890015585 A KR890015585 A KR 890015585A KR 900006986 A KR900006986 A KR 900006986A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019890015585A
Other languages
English (en)
Other versions
KR960005896B1 (ko
Inventor
마사미치 아사노
히로시 이와하시
사다유키 요코야마
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900006986A publication Critical patent/KR900006986A/ko
Application granted granted Critical
Publication of KR960005896B1 publication Critical patent/KR960005896B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/18—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits
    • G06F11/183—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits by voting, the voting not being performed by the redundant components
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/18—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits
    • G06F11/187—Voting techniques
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
KR1019890015585A 1988-10-28 1989-10-28 반도체메모리 KR960005896B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27204688 1988-10-28
JP63-272046 1988-10-28

Publications (2)

Publication Number Publication Date
KR900006986A true KR900006986A (ko) 1990-05-09
KR960005896B1 KR960005896B1 (ko) 1996-05-03

Family

ID=17508356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015585A KR960005896B1 (ko) 1988-10-28 1989-10-28 반도체메모리

Country Status (2)

Country Link
US (1) US5067111A (ko)
KR (1) KR960005896B1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573380B2 (ja) * 1989-12-22 1997-01-22 株式会社東芝 不揮発性半導体メモリ
JP3782840B2 (ja) 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
JPH09134237A (ja) * 1995-11-07 1997-05-20 Sony Corp 電子機器
AU3832297A (en) 1996-02-29 1997-09-16 Hitachi Limited Semiconductor memory device having faulty cells
JP2002529813A (ja) * 1998-10-30 2002-09-10 インフィネオン テクノロジース アクチエンゲゼルシャフト データを記憶する記憶装置およびデータを記憶する記憶装置を作動する方法
US6278740B1 (en) 1998-11-19 2001-08-21 Gates Technology Multi-bit (2i+2)-wire differential coding of digital signals using differential comparators and majority logic
US6067252A (en) * 1999-05-26 2000-05-23 Lattice Semiconductor Corporation Electrically erasable non-volatile memory cell with no static power dissipation
JP4290288B2 (ja) * 1999-08-31 2009-07-01 Ｏｋｉセミコンダクタ株式会社 不揮発性半導体記憶装置
JP2004192694A (ja) * 2002-12-10 2004-07-08 Renesas Technology Corp 半導体記憶装置
JP4908119B2 (ja) * 2005-10-19 2012-04-04 株式会社リガク 蛍光ｘ線分析装置
KR100866961B1 (ko) * 2007-02-27 2008-11-05 삼성전자주식회사 불휘발성 메모리 장치 및 그 구동방법
US7978515B2 (en) * 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置
US8094494B2 (en) * 2009-10-09 2012-01-10 Macronix International Co., Ltd. Memory and operation method therefor
JP5814876B2 (ja) * 2012-07-27 2015-11-17 株式会社東芝 同期整流型電源回路とその調整方法
US8908436B2 (en) 2013-02-22 2014-12-09 Ps4 Luxco S.A.R.L. Method and device for storing and reading reliable information in a NAND array
US10929026B2 (en) * 2016-02-23 2021-02-23 Samsung Electronics Co., Ltd. Multi-cell structure for non-volatile resistive memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1253309A (en) * 1969-11-21 1971-11-10 Marconi Co Ltd Improvements in or relating to data processing arrangements
US3863215A (en) * 1973-07-03 1975-01-28 Rca Corp Detector for repetitive digital codes
US4450538A (en) * 1978-12-23 1984-05-22 Tokyo Shibaura Denki Kabushiki Kaisha Address accessed memory device having parallel to serial conversion
US4376947A (en) * 1979-09-04 1983-03-15 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
US4282446A (en) * 1979-10-01 1981-08-04 Texas Instruments Incorporated High density floating gate EPROM programmable by charge storage
US4375683A (en) * 1980-11-12 1983-03-01 August Systems Fault tolerant computational system and voter circuit
JPS61267846A (ja) * 1984-11-12 1986-11-27 Nec Corp メモリを有する集積回路装置

Also Published As

Publication number Publication date
US5067111A (en) 1991-11-19
KR960005896B1 (ko) 1996-05-03

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Legal Events

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E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100428

Year of fee payment: 15

EXPY Expiration of term