KR101501036B1 - 사파이어 단결정 및 그의 제조 방법 - Google Patents
사파이어 단결정 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR101501036B1 KR101501036B1 KR1020130003851A KR20130003851A KR101501036B1 KR 101501036 B1 KR101501036 B1 KR 101501036B1 KR 1020130003851 A KR1020130003851 A KR 1020130003851A KR 20130003851 A KR20130003851 A KR 20130003851A KR 101501036 B1 KR101501036 B1 KR 101501036B1
- Authority
- KR
- South Korea
- Prior art keywords
- crystal
- single crystal
- sapphire
- sapphire single
- crucible
- Prior art date
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-081574 | 2012-03-30 | ||
JP2012081574A JP5953884B2 (ja) | 2012-03-30 | 2012-03-30 | サファイア単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130111253A KR20130111253A (ko) | 2013-10-10 |
KR101501036B1 true KR101501036B1 (ko) | 2015-03-10 |
Family
ID=49363950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130003851A KR101501036B1 (ko) | 2012-03-30 | 2013-01-14 | 사파이어 단결정 및 그의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5953884B2 (ja) |
KR (1) | KR101501036B1 (ja) |
CN (1) | CN103361727A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5650869B1 (ja) * | 2013-03-21 | 2015-01-07 | 株式会社アライドマテリアル | サファイア単結晶育成用坩堝およびサファイア単結晶育成方法 |
KR101532265B1 (ko) | 2013-12-03 | 2015-06-29 | 주식회사 엘지실트론 | 단결정 성장 장치 |
CN104651935B (zh) * | 2014-10-17 | 2017-06-13 | 洛阳西格马炉业股份有限公司 | 一种坩埚上升法制备高品质蓝宝石晶体的方法 |
CN109112631B (zh) * | 2018-10-29 | 2021-01-01 | 浙江昀丰新材料科技股份有限公司 | 一种蓝宝石c向长晶方法 |
CN111394786A (zh) * | 2020-03-25 | 2020-07-10 | 哈尔滨奥瑞德光电技术有限公司 | 一种用于泡生法生长蓝宝石单晶的异形籽晶结构及其生长方法 |
CN115233299A (zh) * | 2022-07-14 | 2022-10-25 | 露笑新能源技术有限公司 | 一种泡生法生长蓝宝石的引晶方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008031019A (ja) * | 2006-07-31 | 2008-02-14 | Shinkosha:Kk | サファイア単結晶の製造方法 |
JP2008207993A (ja) * | 2007-02-26 | 2008-09-11 | Hitachi Chem Co Ltd | サファイア単結晶の製造方法 |
JP2008266078A (ja) * | 2007-04-23 | 2008-11-06 | Shin Etsu Chem Co Ltd | サファイア単結晶の製造方法 |
JP2009120453A (ja) * | 2007-11-16 | 2009-06-04 | Sumitomo Metal Mining Co Ltd | 酸化アルミニウム単結晶の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09278592A (ja) * | 1996-04-18 | 1997-10-28 | Mitsubishi Heavy Ind Ltd | チタンを含む酸化アルミニウム単結晶の製造方法 |
JP2006151745A (ja) * | 2004-11-29 | 2006-06-15 | Kyocera Corp | 単結晶の製造方法及びそれらを用いた酸化物単結晶 |
JP4940610B2 (ja) * | 2005-09-29 | 2012-05-30 | 住友金属鉱山株式会社 | サファイア単結晶の育成方法 |
JP2008007353A (ja) * | 2006-06-28 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | サファイア単結晶育成装置およびそれを用いた育成方法 |
JP4905171B2 (ja) * | 2007-02-14 | 2012-03-28 | 住友金属鉱山株式会社 | 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶 |
JP5004881B2 (ja) * | 2008-06-27 | 2012-08-22 | 京セラ株式会社 | 単結晶育成装置用坩堝、単結晶育成方法、および単結晶育成装置 |
JP2010143781A (ja) * | 2008-12-17 | 2010-07-01 | Showa Denko Kk | サファイア単結晶の製造方法 |
JP2010150056A (ja) * | 2008-12-24 | 2010-07-08 | Showa Denko Kk | サファイア単結晶の製造方法 |
JP2010189242A (ja) * | 2009-02-20 | 2010-09-02 | Showa Denko Kk | サファイア単結晶の製造方法およびサファイア単結晶引き上げ装置 |
JP2011032104A (ja) * | 2009-07-29 | 2011-02-17 | Showa Denko Kk | サファイア単結晶およびサファイア単結晶の製造方法 |
-
2012
- 2012-03-30 JP JP2012081574A patent/JP5953884B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-14 KR KR1020130003851A patent/KR101501036B1/ko active IP Right Grant
- 2013-03-29 CN CN2013101069673A patent/CN103361727A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008031019A (ja) * | 2006-07-31 | 2008-02-14 | Shinkosha:Kk | サファイア単結晶の製造方法 |
JP2008207993A (ja) * | 2007-02-26 | 2008-09-11 | Hitachi Chem Co Ltd | サファイア単結晶の製造方法 |
JP2008266078A (ja) * | 2007-04-23 | 2008-11-06 | Shin Etsu Chem Co Ltd | サファイア単結晶の製造方法 |
JP2009120453A (ja) * | 2007-11-16 | 2009-06-04 | Sumitomo Metal Mining Co Ltd | 酸化アルミニウム単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5953884B2 (ja) | 2016-07-20 |
CN103361727A (zh) | 2013-10-23 |
KR20130111253A (ko) | 2013-10-10 |
JP2013209257A (ja) | 2013-10-10 |
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