KR100806479B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR100806479B1 KR100806479B1 KR1020060085906A KR20060085906A KR100806479B1 KR 100806479 B1 KR100806479 B1 KR 100806479B1 KR 1020060085906 A KR1020060085906 A KR 1020060085906A KR 20060085906 A KR20060085906 A KR 20060085906A KR 100806479 B1 KR100806479 B1 KR 100806479B1
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- resin
- resin sheet
- die pad
- mold
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920005989 resin Polymers 0.000 claims abstract description 159
- 239000011347 resin Substances 0.000 claims abstract description 159
- 238000007789 sealing Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 239000011888 foil Substances 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 13
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 239000000945 filler Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Abstract
Description
Claims (13)
- 칩이 수지 몰드된 반도체 장치로서,표면과 이면을 구비한 다이패드를 포함하는 프레임과,상기 다이패드의 상기 표면에 탑재된 파워 칩과,대향하는 제 1 면과 제 2 면을 구비하고, 상기 다이패드의 상기 이면이 상기 제 1 면과 접하도록 배치된, 상기 다이패드를 포함하는 크기의 절연성의 수지 시트와,상기 수지 시트의 상기 제 1 면상에 상기 파워 칩을 밀봉하도록 마련된 몰드 수지와,상기 수지 시트의 상기 제 2 면 상에 마련된 금속박과,상기 수지 시트와 상기 몰드 수지의 사이에, 이들을 구성하는 수지가 혼합된 혼합층을 포함하고,상기 수지 시트의 열전도율은 상기 몰드 수지의 열전도율의 2배 이상이고,상기 수지 시트의 상기 제 1 면과, 상기 다이패드의 상기 이면은 직접 고착되어 있고,상기 수지 시트의 상기 제 1 면과 상기 다이패드의 상기 이면이 직접 고착되는 부분인 고착부에서의 상기 수지 시트는 1층으로 이루어지고,상기 고착부의 주위에 상기 혼합층이 형성되어 있는것을 특징으로 하는 반도체 장치.
- 삭제
- 제 1 항에 있어서,상기 고착부는 상기 혼합층에 둘러싸여 있는 것을 특징으로 하는 반도체 장치.
- 제 3 항에 있어서,상기 수지 시트의 상기 제 1 면은 상기 고착부와 상기 혼합층에 의해 덮여 있는 것을 특징으로 하는 반도체 장치.
- 제 1 항, 제 3 항 및 제 4 항 중 어느 한 항에 있어서,상기 수지 시트와 상기 몰드 수지는 모두 에폭시 수지로 이루어지는 것을 특징으로 하는 반도체 장치.
- 삭제
- 제 1 항, 제 3 항 및 제 4 항 중 어느 한 항에 있어서,상기 프레임은, 상기 다이패드와, 이 다이패드와 평행하게 마련된 리드부와, 상기 다이패드와 상기 리드부를 단차(段差)가 생기도록 접속하는 단차부를 포함하는 것을 특징으로 하는 반도체 장치.
- 삭제
- 칩을 수지 몰드한 반도체 장치의 제조 방법으로서,제 1 면과 제 2 면을 갖고, 1층으로 구성되며, 절연성이고 수지 몰드에 이용되며 밀봉용 수지보다 열 전도율이 2배 이상 크고, 또한 반경화 상태이고 다이패드를 포함하는 크기의 수지 시트를 준비하는 공정과,상기 수지 시트의 제 2 면을 금속박으로 덮는 공정과,표면과 이면을 구비한 다이패드를 갖는 프레임을 준비하는 프레임 준비 공정과,상기 다이패드의 상기 표면 상에 파워칩을 탑재하는 공정과,수지 밀봉용 금형을 준비하는 공정과,상기 수지 밀봉용 금형의 내부 저면에 상기 금속박이 접하도록, 상기 수지 밀봉용 금형에 반경화 상태의 상기 수지 시트를 탑재하는 공정과,상기 다이패드의 상기 이면이 상기 수지 시트의 상기 제 1 면에 접하도록, 상기 수지 시트의 상기 제 1 면 상에 상기 프레임을 탑재하는 공정과,상기 수지 밀봉용 금형에 밀봉용 수지를 가압 주입하고, 상기 수지 밀봉용 금형 내에 충전함과 아울러, 상기 수지 밀봉용 금형 내에서 밀봉용 수지와 상기 수지 시트를 가열 경화시키는 몰드 공정을 포함하며,상기 몰드 공정은,상기 수지 시트와 상기 밀봉용 수지 사이에, 이들을 구성하는 수지가 혼합된 혼합층을 형성하고,상기 다이패드의 상기 이면과, 상기 수지 시트의 상기 제 1 면을 고착함과 아울러,상기 수지 시트의 상기 제 1 면과 상기 다이패드의 상기 이면이 고착되는 부분인 고착부의 주위에 상기 혼합층을 형성하는것을 특징으로 하는 반도체 장치의 제조 방법.
- 삭제
- 제 9 항에 있어서,상기 밀봉용 수지와 상기 수지 시트는 모두 에폭시 수지로 이루어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 삭제
- 삭제
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US7671453B2 (en) | 2010-03-02 |
US20050067719A1 (en) | 2005-03-31 |
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KR20070104497A (ko) | 2007-10-26 |
KR20050031877A (ko) | 2005-04-06 |
CN100446246C (zh) | 2008-12-24 |
CN1604324A (zh) | 2005-04-06 |
KR20060104964A (ko) | 2006-10-09 |
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