JP5598189B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5598189B2 JP5598189B2 JP2010201025A JP2010201025A JP5598189B2 JP 5598189 B2 JP5598189 B2 JP 5598189B2 JP 2010201025 A JP2010201025 A JP 2010201025A JP 2010201025 A JP2010201025 A JP 2010201025A JP 5598189 B2 JP5598189 B2 JP 5598189B2
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Description
したがって、半導体素子を実装したアイランドに固定される固定部材の露出面でのバリの発生を防止して、当該露出面を封止部材から確実に露出させることができる。
なお、第2工程において、他側面への固定部材の固定と一側面への半導体素子の実装とは、どちらを先に実施してもよいが、他側面への固定部材の固定を先に実施する方が、半導体素子の実装時にアイランドが固定部材に固定されているため、半導体素子に関する電気的接続作業が容易になる。
また、第3工程にて、金型に取り付けられる押圧用ピンにより、固定部材のうちアイランドが固定される固定部と異なる非固定部が内壁面に向けて押圧される。このようにしても、アイランドに直接押圧力を作用させることなく、固定部材の露出面と金型の内壁面との間における隙間の発生を抑制することができる。特に、押圧用ピンにより非固定部が押圧されるため、押圧用ピンとアイランドとが離間するので、アイランドに実装される素子等に接続されるワイヤ等と押圧用ピンとを干渉しにくくすることができる。
さらに、リードフレームには、アイランドと異なる部位であって、押圧用ピンと非固定部との双方に押圧状態で接触する接触部が設けられるため、アイランドに直接押圧力を作用させることなく、固定部材を内壁面に向けて押圧することができる。
以下、本発明の半導体装置の製造方法を具現化した第1実施形態について、図面を参照して説明する。図1は、第1実施形態に係る半導体装置10の構成を概略的に示す断面図である。図2は、図1の両アイランド21,31と固定部材50との接着固定状態を示す説明図である。
したがって、パワー素子11,12等の半導体素子を実装したアイランド21,31に固定される固定部材50の露出面50aでのバリの発生を防止して、当該露出面50aをモールド樹脂60から確実に露出させることができる。
次に、本発明の第2実施形態に係る半導体装置について図16を参照して説明する。図16は、第2実施形態に係る半導体装置10の要部を示す一部断面図である。
図16に示すように、本第2実施形態に係る半導体装置10は、リードフレーム20,30に代えてリードフレーム20e,30eを採用する点が、上記第1実施形態および各変形例に係る半導体装置と異なる。したがって、第1実施形態の半導体装置と実質的に同一の構成部分には、同一符号を付し、その説明を省略する。
次に、本発明の第3実施形態に係る半導体装置について図17を参照して説明する。図17は、第3実施形態に係る半導体装置10の要部を示す一部断面図である。
図17に示すように、本第3実施形態に係る半導体装置10は、金型70に代えて金型70aを採用する点が、上記第1実施形態および各変形例に係る半導体装置と異なる。したがって、第1実施形態の半導体装置と実質的に同一の構成部分には、同一符号を付し、その説明を省略する。
(1)上述した固定部材50を内壁面72aに向けて押圧する押圧部として、金型70の押圧用ピン73のみを採用してもよいし、挟持部74のみを採用してもよい。また、上記押圧部として、押圧用ピン73および挟持部74に加えて、固定部材50を内壁面72aに向けて押圧するための他の部材を採用してもよい。
11,12…パワー素子(半導体素子)
13…制御IC
19a,19b…リードフレーム(接触部)
20,20a〜20e,30,30d,30e,40…リードフレーム
21,24a,24b,31,41…アイランド
22,26a,32,36a…外側端部(被挟持部)
50…固定部材
50a…露出面
50b…非固定部
51…絶縁シート(絶縁部材)
52…銅箔(放熱部材)
60…モールド樹脂(封止部材)
70,70a…金型
71…上型
72…下型
72a…内壁面
73…押圧用ピン(押圧部)
74…挟持部(押圧部)
75…凸部
Claims (4)
- リードフレームのアイランドの一側面に半導体素子が実装されるとともに他側面に固定部材が固定され、この固定部材の露出面が露出するように前記半導体素子および前記アイランドが封止部材により封止される半導体装置の製造方法であって、
前記アイランドが形成された前記リードフレームを用意する第1工程と、
前記アイランドの前記他側面に前記固定部材を固定するとともに前記アイランドの前記一側面に前記半導体素子を実装する第2工程と、
前記固定部材および前記半導体素子が取り付けられた前記アイランドを金型内に配置して、型締時にこの金型に設けられる押圧部により前記露出面が前記金型の内壁面に面接触するように前記固定部材を前記内壁面に向けて押圧する第3工程と、
前記金型内に前記封止部材を構成する封止用材料を注入して前記固定部材の前記露出面が露出するように前記半導体素子および前記アイランドを封止する第4工程と、
を備え、
前記押圧部は、前記金型に複数個所設けられ、
前記リードフレームには、複数のアイランドが形成されており、
前記第2工程では、前記複数のアイランドのそれぞれの前記他側面に共通の前記固定部材を固定し、
前記第2工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とを電気的に接続し、
前記押圧部は、前記金型に取り付けられる押圧用ピンであって、
前記第3工程では、前記押圧用ピンにより、前記固定部材のうち前記アイランドが固定される固定部と異なる非固定部が前記内壁面に向けて押圧され、
前記リードフレームには、前記アイランドと異なる部位であって、前記押圧用ピンと前記非固定部との双方に押圧状態で接触する接触部が設けられることを特徴とする半導体装置の製造方法。 - 前記第2工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とをワイヤボンディングにより電気的に接続することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記固定部材は、絶縁部材に放熱部材の一側面を貼り付けて構成され、前記放熱部材の他側面が前記露出面として前記封止部材から露出することを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記絶縁部材は、接着性を有する絶縁シートであることを特徴とする請求項3に記載の半導体装置の製造方法。
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