JP5607447B2 - 回路装置 - Google Patents
回路装置 Download PDFInfo
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- JP5607447B2 JP5607447B2 JP2010164995A JP2010164995A JP5607447B2 JP 5607447 B2 JP5607447 B2 JP 5607447B2 JP 2010164995 A JP2010164995 A JP 2010164995A JP 2010164995 A JP2010164995 A JP 2010164995A JP 5607447 B2 JP5607447 B2 JP 5607447B2
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- sealing body
- resin
- resin sealing
- circuit board
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- 229920005989 resin Polymers 0.000 claims description 235
- 239000011347 resin Substances 0.000 claims description 235
- 238000007789 sealing Methods 0.000 claims description 138
- 239000000945 filler Substances 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 17
- 230000017525 heat dissipation Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 8
- 229910001111 Fine metal Inorganic materials 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
2 樹脂封止体
2A 第1の樹脂封止体
2B 第2の樹脂封止体
3 リード
4 回路基板
6 導電パターン
12 樹脂シート
21 樹脂封止金型
Claims (4)
- 回路基板と、前記回路基板の一主面側に設けられた導電パターンと、前記導電パターン上に固着された回路素子と、前記回路基板を被覆する樹脂封止体とを有する回路装置において、
前記樹脂封止体は、少なくとも前記回路基板の一主面側を被覆する第1の樹脂封止体と、少なくとも前記回路基板の前記一主面と対向する他の主面側を被覆する第2の樹脂封止体とを有し、
前記第2の樹脂封止体に含まれるフィラーの粒径は、前記第1の樹脂封止体に含まれるフィラーの粒径よりも大きく、
前記第2の樹脂封止体に含まれるフィラーの材質は、前記第1の樹脂封止体に含まれるフィラーの材質とは異なり、前記第2の樹脂封止体に含まれるフィラーの熱伝導率は、前記第1の樹脂封止体に含まれるフィラーの熱伝導率よりも大きいことを特徴とする回路装置。 - 前記第2の樹脂封止体は、前記回路基板の他の主面の下面に配置された固形の樹脂シートを溶融した後、硬化した樹脂から成ることを特徴とする請求項1に記載の回路装置。
- 前記第2の樹脂封止体に含まれるフィラーの形状は、結晶形状または破砕形状であることを特徴とする請求項1または請求項2に記載の回路装置。
- 前記第1の樹脂封止体に含まれるフィラーは、球状のシリカであり、前記第2の樹脂封止体に含まれるフィラーは、アルミナであることを特徴とする請求項1から請求項3のいずれか1項に記載の回路装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010164995A JP5607447B2 (ja) | 2010-07-22 | 2010-07-22 | 回路装置 |
CN201110204672.0A CN102347308B (zh) | 2010-07-22 | 2011-07-21 | 电路装置 |
KR1020110072471A KR101316273B1 (ko) | 2010-07-22 | 2011-07-21 | 회로 장치 |
US13/188,707 US8614397B2 (en) | 2010-07-22 | 2011-07-22 | Circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010164995A JP5607447B2 (ja) | 2010-07-22 | 2010-07-22 | 回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012028509A JP2012028509A (ja) | 2012-02-09 |
JP5607447B2 true JP5607447B2 (ja) | 2014-10-15 |
Family
ID=45492639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010164995A Active JP5607447B2 (ja) | 2010-07-22 | 2010-07-22 | 回路装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8614397B2 (ja) |
JP (1) | JP5607447B2 (ja) |
KR (1) | KR101316273B1 (ja) |
CN (1) | CN102347308B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017007135T5 (de) * | 2017-02-27 | 2019-11-07 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3378374B2 (ja) * | 1993-09-14 | 2003-02-17 | 株式会社東芝 | 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置及び封止用樹脂シート |
JP4054927B2 (ja) * | 1998-06-25 | 2008-03-05 | 北興化学工業株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP3973773B2 (ja) * | 1998-07-28 | 2007-09-12 | ジャパンエポキシレジン株式会社 | 半導体封止用エポキシ樹脂組成物 |
JP2002128861A (ja) * | 2000-10-23 | 2002-05-09 | Japan Epoxy Resin Kk | エポキシ樹脂組成物及びその製法 |
JP4614585B2 (ja) | 2001-06-28 | 2011-01-19 | 三洋電機株式会社 | 混成集積回路装置の製造方法 |
JP2005109100A (ja) * | 2003-09-30 | 2005-04-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP4545022B2 (ja) * | 2005-03-10 | 2010-09-15 | 三洋電機株式会社 | 回路装置およびその製造方法 |
JP2008108836A (ja) * | 2006-10-24 | 2008-05-08 | Sharp Corp | 半導体発光装置およびその製造方法 |
US8259454B2 (en) * | 2008-04-14 | 2012-09-04 | General Electric Company | Interconnect structure including hybrid frame panel |
US8084301B2 (en) * | 2008-09-11 | 2011-12-27 | Sanyo Electric Co., Ltd. | Resin sheet, circuit device and method of manufacturing the same |
JP5308108B2 (ja) | 2008-09-11 | 2013-10-09 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置の製造方法 |
JP5542318B2 (ja) * | 2008-09-29 | 2014-07-09 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 樹脂シートおよびそれを用いた回路装置の製造方法 |
JP2010109246A (ja) | 2008-10-31 | 2010-05-13 | Yaskawa Electric Corp | 半導体装置および半導体装置の製造方法 |
-
2010
- 2010-07-22 JP JP2010164995A patent/JP5607447B2/ja active Active
-
2011
- 2011-07-21 CN CN201110204672.0A patent/CN102347308B/zh active Active
- 2011-07-21 KR KR1020110072471A patent/KR101316273B1/ko active IP Right Grant
- 2011-07-22 US US13/188,707 patent/US8614397B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012028509A (ja) | 2012-02-09 |
CN102347308B (zh) | 2015-06-17 |
KR101316273B1 (ko) | 2013-10-08 |
KR20120010186A (ko) | 2012-02-02 |
US20120018202A1 (en) | 2012-01-26 |
US8614397B2 (en) | 2013-12-24 |
CN102347308A (zh) | 2012-02-08 |
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