CN116705721A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN116705721A CN116705721A CN202310161259.3A CN202310161259A CN116705721A CN 116705721 A CN116705721 A CN 116705721A CN 202310161259 A CN202310161259 A CN 202310161259A CN 116705721 A CN116705721 A CN 116705721A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 182
- 239000000463 material Substances 0.000 claims abstract description 116
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229920005989 resin Polymers 0.000 claims abstract description 50
- 239000011347 resin Substances 0.000 claims abstract description 50
- 230000017525 heat dissipation Effects 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 21
- 239000005022 packaging material Substances 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
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- 238000000034 method Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 8
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- 239000003566 sealing material Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Abstract
目的在于提供在半导体装置的制造时能容易地将保护半导体模块与散热部件之间的接合部的树脂材料配置于规定位置的技术。半导体装置具有散热部件(1)和半导体模块(10)。半导体模块具有:金属板(11),通过接合材料(19)与散热部件的上表面的接合区域接合;绝缘层(12),设置于金属板的上表面;金属部件(13),设置于绝缘层的上表面;半导体元件(14),搭载于金属部件的上表面;及封装材料(18),在金属板的下表面露出的状态下将金属板、绝缘层、金属部件及半导体元件封装。在散热部件的比接合区域更靠外周侧的部分以与接合区域相比高度位置低的方式设置有台阶(2),在台阶配置有保护半导体模块与散热部件之间的接合部的树脂材料(3)。
Description
技术领域
本发明涉及半导体装置。
背景技术
在专利文献1中公开了在半导体模块处露出的金属板与冷却装置(相当于散热部件)通过接合材料而接合的半导体装置。就该半导体装置而言,通过树脂材料将金属板的非接合区域、接合材料的周围区域以及冷却装置处被接合起来的部分的周围的接合周围区域覆盖,由此使半导体模块与冷却装置之间的接合部的可靠性提高。
专利文献1:日本特开2012-142465号公报
在专利文献1所记载的技术中,在配置树脂材料的部位即冷却装置的上表面,为了提高与树脂材料之间的密接性而设置锚固部,但存在以下问题,即,冷却装置的上表面的接合区域与非接合区域处于相同的高度位置,因此在半导体装置的制造时难以将树脂材料配置于规定的位置。
发明内容
因此,本发明的目的在于提供在半导体装置的制造时能够容易地将对半导体模块与散热部件之间的接合部进行保护的树脂材料配置于规定的位置的技术。
本发明涉及的半导体装置具有:散热部件;以及半导体模块,其设置于所述散热部件的上表面,所述半导体模块具有:金属板,其通过接合材料与所述散热部件的上表面的接合区域接合;绝缘层,其设置于所述金属板的上表面;金属部件,其设置于所述绝缘层的上表面;半导体元件,其搭载于所述金属部件的上表面;以及封装材料,其在所述金属板的下表面露出的状态下将所述金属板、所述绝缘层、所述金属部件及所述半导体元件封装,在所述散热部件的比所述接合区域更靠外周侧的部分以与所述接合区域相比高度位置低的方式设置有台阶,在所述台阶配置有对所述半导体模块与所述散热部件之间的接合部进行保护的树脂材料。
发明的效果
根据本发明,以使得散热部件的比接合区域更靠外周侧的部分与接合区域相比高度位置低的方式设置有台阶,因此,用于配置树脂材料的空间变大,树脂材料的向散热部件的比接合区域更靠外周侧的部分的流入变得容易。由此,在半导体装置的制造时,能够容易地将树脂材料配置于规定的位置。
附图说明
图1是实施方式1涉及的半导体装置的剖视图。
图2是实施方式2涉及的半导体装置的剖视图。
图3是实施方式2的变形例涉及的半导体装置的剖视图。
图4是实施方式3涉及的半导体装置的剖视图。
图5是实施方式4涉及的半导体装置的剖视图。
图6是实施方式4的变形例1涉及的半导体装置的剖视图。
图7是实施方式4的变形例2涉及的半导体装置的剖视图。
图8是实施方式5涉及的半导体装置的剖视图。
具体实施方式
<实施方式1>
<半导体装置的结构>
以下,使用附图对实施方式1进行说明。图1是实施方式1涉及的半导体装置的剖视图。
如图1所示,半导体装置具有半导体模块10和散热部件1。首先,对半导体模块10进行说明。
半导体模块10设置于散热部件1的上表面。半导体模块10具有金属板11、绝缘层12、金属部件13、半导体元件14、封装材料18和引线电极15、16。
金属板11经由接合材料19与散热部件1的上表面的接合区域接合。采用厚度105μm的铜箔作为金属板11。通过使用导热率高的材料使金属板11的厚度变薄,从而能够提高从绝缘层12向接合材料19的散热性。
绝缘层12设置于金属板11的上表面。能够采用含有高导热填料的具有大于或等于10W/m·K的导热率的树脂作为绝缘层12。通过采用导热率高且抗变形能力强的树脂作为绝缘层12,从而能够抑制在由于热循环等导致构成半导体装置的部件产生了微小变形时出现龟裂,因此,在半导体装置中能够兼顾高散热和高可靠性这两者。
另外,绝缘层12的材料不限定于此,也能够采用AlN、Al2O3及Si3N4的任意者。通过采用导热率高的材料作为绝缘层12,从而能够提高从金属部件13经由绝缘层12向金属板11的散热性,因此,能够抑制半导体装置的温度上升,提高半导体装置的寿命。
金属部件13设置于绝缘层12的上表面。优选金属部件13的材料是导热率高的材料,采用厚度3mm的铜块作为金属部件13。
半导体元件14经由接合材料20而搭载于金属部件13的上表面。在半导体元件14的上表面设置有多个上表面电极(未图示),半导体元件14的一个上表面电极经由接合材料21与引线电极15的一端部接合。半导体模块10只要具有至少1个半导体元件14即可。在实施方式1中,半导体模块10具有1个半导体元件14。半导体元件14的半导体材料是Si或SiC,半导体元件14例如是反向导通IGBT(RC-IGBT:Reverse Conducting Insulated Gate BipolarTransistor)。
另外,半导体元件14的另一个上表面电极经由连接配线17与引线电极16的一端部连接。连接配线17例如是铝导线或铜导线。
采用厚度0.64mm的铜框作为引线电极15、16,引线电极15、16承担形成电气电路的作用。引线电极15、16只要是可以通电的部件即可,因此也可以是铝导线等。在引线电极15是铝导线的情况下,不需要引线电极15与半导体元件14之间的接合材料21。
封装材料18是在金属板11的下表面露出的状态下将金属板11、绝缘层12、金属部件13及半导体元件14封装的热固性树脂。在实施方式1中,封装材料18是环氧树脂。另外,引线电极15、16的另一端部即外部连接部与半导体模块10的外部设备电连接,因此从封装材料18露出。封装材料18的材料只要是使半导体模块10的可靠性提高的材料即可,优选是能够通过传递模塑法来形成半导体模块10的材料。
接合材料20、21是焊料,但也可以是导热率高的银膏材料等。接合材料19承担将半导体模块10与散热部件1进行接合的作用。在实施方式1中,接合材料19是厚度150μm的焊料。接合材料19只要是使导热提高的材料即可,也可以是散热脂等。
接下来,对散热部件1进行说明。如图1所示,散热部件1形成为块状,在散热部件1的比接合区域更靠外周侧的部分以与接合区域相比高度位置低的方式设置有台阶2。散热部件1的材料优选导热率高且能够通过接合材料19进行接合的材料。例如,优选铜或实施了镍镀敷的铝等作为散热部件1的材料。由此,能够使半导体模块10所产生的热高效地进行散热,因此能够抑制半导体模块10的温度上升。
这里,接合区域是指散热部件1的上表面中的与半导体模块10的金属板11接合的区域,即,配置接合材料19的区域。在散热部件1的上表面中的比接合区域更靠外周侧的区域未配置接合材料19,因此该区域是非接合区域。以下,将散热部件1的上表面中的比接合区域更靠外周侧的区域也称为“散热部件1的非接合区域”。
台阶2是遍及散热部件1的上表面的整周而设置的。即,台阶2是以将散热部件1的接合区域包围的方式设置的。在台阶2配置有对半导体模块10与散热部件1之间的接合部进行保护的树脂材料3。这里,半导体模块10与散热部件1之间的接合部是指包含金属板11的下表面中的与接合材料19接触的区域、接合材料19、散热部件1的上表面的接合区域在内的部分。
在实施方式1中,树脂材料3是环氧树脂,但不限定于此。树脂材料3只要是能够使接合材料19的可靠性提高且能够使接合材料19在熔点以下固化的材料即可。另外,就树脂材料3而言,如果考虑到向所需部位的填充性,则优选粘度低,并且优选与封装材料18之间的密接性及与散热部件1之间的密接性高。
<效果>
接下来,从制造工序的观点出发对实施方式1涉及的半导体装置的效果进行说明。在经由接合材料19将半导体模块10与散热部件1接合之后,经过在设置有台阶2的散热部件1的非接合区域涂敷树脂材料3的工序而形成半导体装置。
在未设置台阶2的情况下,在半导体模块10与散热部件1之间的未配置接合材料19的部分产生具有与接合材料19相等的厚度的空间。在实施方式1中,接合材料19的厚度为150μm,空间的高度也非常小,因此,在涂敷了树脂材料3时难以使树脂材料3流入该空间而进行配置。
与此相对,实施方式1涉及的半导体装置具有散热部件1和在散热部件1的上表面设置的半导体模块10,半导体模块10具有:金属板11,其通过接合材料19与散热部件1的上表面的接合区域接合;绝缘层12,其设置于金属板11的上表面;金属部件13,其设置于绝缘层12的上表面;半导体元件14,其搭载于金属部件13的上表面;以及封装材料18,其在金属板11的下表面露出的状态下将金属板11、绝缘层12、金属部件13及半导体元件14封装,在散热部件1的比接合区域更靠外周侧的部分以与接合区域相比高度位置低的方式设置有台阶2,在台阶2配置有对半导体模块10与散热部件1之间的接合部进行保护的树脂材料3。
由于以散热部件1的比接合区域更靠外周侧的部分与接合区域相比高度位置低的方式设置有台阶2,因此,用于配置树脂材料3的空间变大,树脂材料3的向散热部件1的比接合区域更靠外周侧的部分的流入变得容易。由此,能够容易地将树脂材料3配置于规定的位置。其结果,半导体装置的形成变得容易。
另外,能够不仅通过接合材料19还通过树脂材料3将半导体模块10与散热部件1牢固地固定,因此,能够抑制由热循环等引起的对接合材料19及绝缘层12的损伤。由此,能够提高半导体装置的可靠性。
另外,接合材料19包含散热脂,因此能够进一步抑制由热循环等引起的对绝缘层12的损伤。半导体模块10与散热部件1通过树脂材料3而被牢固地固定,因此能够抑制半导体装置的动作时的接合材料19的泵出。
另外,接合材料19包含焊料,因此能够将半导体模块10所产生的热高效地传导至散热部件1。由此,能够抑制半导体装置的温度上升,提高半导体装置的可靠性。通过树脂材料3将半导体模块10与散热部件1固定,由此能够抑制由热循环等引起的对接合材料19的损伤,因此能够提高半导体装置的可靠性。
另外,半导体元件14的半导体材料是SiC。SiC在高温下使用的可能性高,因此半导体模块10的翘曲的变动也变大,半导体模块10与散热部件1之间的接合部的可靠性下降的可能性大。在接合材料19是焊料的情况下,容易产生接合材料19的龟裂,另外,在是散热脂的情况下,容易发生泵出。因此,通过抑制半导体模块10的翘曲的变动,从而能够提高半导体装置的可靠性。
另外,半导体元件14是反向导通IGBT,因此能够实现半导体模块10的高密度化,但半导体模块10的发热变大,在接合材料19是焊料的情况下,容易产生接合材料19的龟裂,另外,在是散热脂的情况下,容易发生泵出。但是,在实施方式1中,通过树脂材料3将接合材料19固定,由此能够抑制这样的问题产生,因此能够提高半导体模块10的可靠性。
另外,金属板11包含铜,因此能够将半导体元件14所产生的热高效地向散热部件1传导。由此,能够抑制半导体装置的温度上升。
另外,金属部件13包含铜,因此能够将半导体元件14所产生的热高效地向散热部件1传导。由此,能够抑制半导体装置的温度上升。
<实施方式2>
接下来,对实施方式2涉及的半导体装置进行说明。图2是实施方式2涉及的半导体装置的剖视图。此外,在实施方式2中,对与在实施方式1中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图2所示,在实施方式2中,相对于实施方式1来说,台阶2由槽4形成。槽4设置于散热部件1的非接合区域中的除散热部件1的周缘部以外的部分。另外,槽4是以将散热部件1的接合区域包围的方式遍及散热部件1的上表面整周而设置的。
如上所述,就实施方式2涉及的半导体装置而言,台阶2由槽4形成,因此能够将固化前的树脂材料3贮存于槽4。由此,能够对树脂材料3的量进行管理,能够提高半导体装置的生产率。
接下来,使用图3对实施方式2的变形例进行说明。图3是实施方式2的变形例涉及的半导体装置的剖视图。
如图3所示,在实施方式2的变形例中明示出了槽4的优选尺寸。散热部件1的槽4的内侧面至半导体模块10的侧面的距离a和散热部件1的槽4的底面至半导体模块10的下表面的距离b满足a≤b的关系。这里,半导体模块10的侧面是指封装材料18的侧面,半导体模块10的下表面是指金属板11的下表面。由此,在树脂材料3的涂敷时树脂材料3变得更容易流入位于半导体模块10的正下方的槽4,因此能够进一步提高半导体装置的生产率。
另外,散热部件1的上表面的比槽4更靠外周侧的区域与接合区域相比高度位置高。由此,在树脂材料3的涂敷时树脂材料3变得容易向半导体模块10侧流入,树脂材料3与半导体模块10之间的接触面积增加,因此能够将半导体模块10与散热部件1更牢固地进行固定。其结果,能够提高半导体装置的可靠性。
另外,散热部件1的槽4的底面至半导体模块10的下表面的距离b和半导体模块10的侧面至散热部件1的槽4的外侧面的距离c满足b≤c的关系。此外,关于b≤c的关系,可以仅槽4的一部分满足,也可以槽4的整周都满足。
由此,能够容易地进行树脂材料3的涂敷,因此能够提高半导体装置的生产率。
另外,散热部件1的上表面的比槽4更靠外周侧的区域的高度位置与散热部件1的上表面的接合区域的高度位置之差d大于接合材料19的厚度。由此,树脂材料3与半导体模块10的侧面之间的接触面积增加,树脂材料3与半导体模块10的侧面密接,因此,能够更牢固地将半导体模块10与散热部件1进行固定。其结果,能够提高半导体装置的可靠性。
<实施方式3>
接下来,对实施方式3涉及的半导体装置进行说明。图4是实施方式3涉及的半导体装置的剖视图。此外,在实施方式3中,对与在实施方式1、2中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图4所示,在实施方式3中,相对于实施方式2来说,在半导体模块10侧面设置有向侧方凸出的多个凸起18a,多个凸起18a被树脂材料3覆盖。多个凸起18a设置于封装材料18的侧面。在树脂材料3的涂敷时,树脂材料3被从凸起18a与散热部件1的槽4的外侧面之间注入,因此能够容易地将树脂材料3配置于规定的位置。此外,也能够对实施方式1的构造应用实施方式3的构造。
通过设置有多个凸起18a,从而半导体模块10与树脂材料3之间的接触面积增加,树脂材料3与半导体模块10之间的密接性提高。由此,能够使半导体模块10与散热部件1之间的固定更加牢固。其结果,能够进一步提高半导体装置的可靠性。
此外,多个凸起18a的材质是与封装材料18相同的材质,凸起18a的形状只要是使封装材料18的表面积增加的形状即可,也可以是立方体状或圆筒状等。
<实施方式4>
接下来,对实施方式4涉及的半导体装置进行说明。图5是实施方式4涉及的半导体装置的剖视图。图6是实施方式4的变形例1涉及的半导体装置的剖视图。图7是实施方式4的变形例2涉及的半导体装置的剖视图。此外,在实施方式4中,对与在实施方式1~3中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图5所示,在实施方式4中,相对于实施方式3来说,在台阶2设置有底部切去(undercut)部4a。底部切去部4a设置于槽4的底部,是以沿槽4的内周侧和外周侧延伸的方式形成的。此外,也能够对实施方式1、2的构造应用实施方式4的构造。
由此,树脂材料3与散热部件1之间的密接性提高,能够使半导体模块10与散热部件1之间的固定更加牢固。其结果,能够进一步提高半导体装置的可靠性。
此外,在槽4的底部设置的底部切去部4a只要是使树脂材料3与散热部件1之间的密接性提高的形状即可,例如也可以如图6所示,为在剖视观察时呈矩形的凹凸,或者如图7所示,为在剖视观察时呈三角形形状的凹凸。
<实施方式5>
接下来,对实施方式5涉及的半导体装置进行说明。图8是实施方式5涉及的半导体装置的剖视图。此外,在实施方式5中,对与在实施方式1~4中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图8所示,在实施方式5中,相对于实施方式3来说,半导体模块10具有多个(例如2个)金属部件13。就金属部件13与半导体元件14之间的连接关系而言,2个都是相同的。一个(在图8中左侧)半导体元件14的上表面电极经由接合材料21与引线电极15的一端部接合,另一个(在图8中右侧)的半导体元件14的上表面电极经由接合材料21与引线电极22的一端部接合,搭载有一个半导体元件14的金属部件13的上表面与引线电极22的另一端部接合。另外,另一个半导体元件14经由连接配线17与引线电极16的一端部连接。此外,也能够对实施方式1~4的构造应用实施方式5的构造。
具有多个金属部件13的半导体模块10的与温度变化相伴的翘曲的变动大,因此与金属部件13为1个的情况相比,在接合材料19是焊料的情况下,容易产生接合材料19的龟裂,在是散热脂的情况下,容易发生泵出。在实施方式5中,能够将半导体模块10与散热部件1牢固地固定,因此,能够抑制翘曲的变动。由此,能够提高半导体装置的可靠性。
此外,能够对各实施方式自由地进行组合,或者对各实施方式适当地进行变形、省略。
标号的说明
1散热部件,2台阶,3树脂材料,4槽,4a底部切去部,10半导体模块,11金属板,12绝缘层,13金属部件,14半导体元件,18封装材料,18a凸起。
Claims (15)
1.一种半导体装置,其具有:
散热部件;以及
半导体模块,其设置于所述散热部件的上表面,
所述半导体模块具有:
金属板,其通过接合材料与所述散热部件的上表面的接合区域接合;
绝缘层,其设置于所述金属板的上表面;
金属部件,其设置于所述绝缘层的上表面;
半导体元件,其搭载于所述金属部件的上表面;以及
封装材料,其在所述金属板的下表面露出的状态下将所述金属板、所述绝缘层、所述金属部件及所述半导体元件封装,
在所述散热部件的比所述接合区域更靠外周侧的部分以与所述接合区域相比高度位置低的方式设置有台阶,
在所述台阶配置有对所述半导体模块与所述散热部件之间的接合部进行保护的树脂材料。
2.根据权利要求1所述的半导体装置,其中,
所述接合材料包含散热脂。
3.根据权利要求1所述的半导体装置,其中,
所述接合材料包含焊料。
4.根据权利要求1至3中任一项所述的半导体装置,其中,
在所述半导体模块的侧面设置有向侧方凸出的多个凸起,
多个所述凸起被所述树脂材料覆盖。
5.根据权利要求1至4中任一项所述的半导体装置,其中,
所述台阶由槽形成。
6.根据权利要求1至5中任一项所述的半导体装置,其中,
在所述台阶设置有底部切去部。
7.根据权利要求1至6中任一项所述的半导体装置,其中,
所述半导体模块具有多个所述金属部件。
8.根据权利要求1至7中任一项所述的半导体装置,其中,
所述半导体元件的半导体材料是SiC。
9.根据权利要求1至7中任一项所述的半导体装置,其中,
所述半导体元件是反向导通IGBT。
10.根据权利要求1至9中任一项所述的半导体装置,其中,
所述金属板包含铜。
11.根据权利要求1至10中任一项所述的半导体装置,其中,
所述金属部件包含铜。
12.根据权利要求5所述的半导体装置,其中,
所述散热部件的所述槽的内侧面至所述半导体模块的侧面的距离a和所述散热部件的所述槽的底面至所述半导体模块的下表面的距离b满足a≤b的关系。
13.根据权利要求12所述的半导体装置,其中,
所述散热部件的上表面的比所述槽更靠外周侧的区域与所述接合区域相比高度位置高。
14.根据权利要求13所述的半导体装置,其中,
所述散热部件的上表面的比所述槽更靠外周侧的区域的高度位置与所述散热部件的上表面的所述接合区域的高度位置之差大于所述接合材料的厚度。
15.根据权利要求14所述的半导体装置,其中,
所述散热部件的所述槽的底面至所述半导体模块的下表面的距离b和所述半导体模块的侧面至所述散热部件的所述槽的外侧面的距离c满足b≤c的关系。
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