JP6261309B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP6261309B2 JP6261309B2 JP2013249287A JP2013249287A JP6261309B2 JP 6261309 B2 JP6261309 B2 JP 6261309B2 JP 2013249287 A JP2013249287 A JP 2013249287A JP 2013249287 A JP2013249287 A JP 2013249287A JP 6261309 B2 JP6261309 B2 JP 6261309B2
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- Prior art keywords
- power module
- frame
- igbt
- die pad
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011347 resin Substances 0.000 claims description 65
- 229920005989 resin Polymers 0.000 claims description 65
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000007767 bonding agent Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 29
- 238000000465 moulding Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Description
まず、本発明の実施の形態1に係るパワーモジュールの構成について説明する前に、これと関連するパワーモジュール(以下、「関連パワーモジュール」と呼ぶ)について説明する。
エアコンの通年稼働時間において、暖房中間運転期間が年間を通して最も長く、そのときのモータ出力電流値は低いため、この期間における損失をなるべく改善することが好ましい。そこで、RC−IGBT21の代わりに、材質にシリコンを使用したMOSFET(Metal Oxide Semiconductor Field Effect Transistor)であるSi−MOSFETを、パワーモジュールに備えてもよい。このようなSi−MOSFETを備える構成によれば、低電流領域の損失を改善することができる。したがって、当該パワーモジュールがエアコンに搭載された場合には、エアコンの省エネルギー効果を表す指標であるAPF(Annual Performance Factor)を改善する効果が見込める。
RC−IGBT21の代わりに、材質にシリコンカーバイドを使用したMOSFET(Metal Oxide Semiconductor Field Effect Transistor)であるSiC−MOSFETを、パワーモジュールに備えてもよい。SiCはSiに比べて放熱性に優れるため、RC−IGBT21及びSi−MOSFETと比較して同程度の放熱性であればチップサイズを縮小することができるので、パッケージの小型化が可能となる。また、同程度のチップサイズであれば、放熱性の向上が見込めるため、当該パワーモジュールがエアコンに搭載された場合には、製品性能向上によるエアコンシステムトータルでのコスト低減(例えば放熱性向上による放熱フィンの小型化など)を図ることができる。
実施の形態1では、RC−IGBT21は、はんだ(図示せず)によって第1フレーム1の第1ダイパッド1bと接続されている構成、すなわちダイボンドにはんだを用いた構成について説明したが、これに限ったものではない。例えば、RC−IGBT21が、はんだの代わりに銀ペーストなどの樹脂ダイボンド剤(図示せず)によって第1フレーム1の第1ダイパッド1bと接続される構成であってもよい。これにより、RC−IGBT21のダイボンド工程と、制御IC4のダイボンド工程とにおいて同じダイボンド装置を用いることが可能となる。加えて、銀ペーストなどの樹脂ダイボンド剤を用いることでアセンブリ加工費の低減を図ることができる。
図3は、本発明の実施の形態2に係るパワーモジュールの内部構成を示す上面図である。本実施の形態2に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図4は、本発明の実施の形態3に係るパワーモジュールの内部構成を示す上面図である。本実施の形態3に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図6〜図10は、本発明の実施の形態4に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態4に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
実施の形態4では、第1フレーム1及び第1フレーム1側のタイバー33に設けた樹脂ランナー34に樹脂を注入することによって、モールド樹脂7を成型したが、これに限ったものではない。例えば、上述の樹脂ランナー34を設けずに、隣り合う第1フレーム1と、これらを接続するタイバー33とによって囲まれる空間に樹脂注入ゲートを配置し、当該樹脂注入ゲート(図示せず)から樹脂を注入することによって、モールド樹脂7を成型してもよい。
図11は、本発明の実施の形態5に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態5に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図12は、本発明の実施の形態6に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態6に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図13は、本発明の実施の形態7に係るパワーモジュールの製造工程(半導体装置の接続工程)を示す図である。なお、本実施の形態7に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図14は、本発明の実施の形態8に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態8に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図15は、本発明の実施の形態9に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態9に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
図16は、本発明の実施の形態10に係るパワーモジュールの製造工程を示す図である。なお、本実施の形態10に係るパワーモジュールの構成要素のうち、以上で説明した構成要素と同一または類似するものについては同じ符号を付して以下説明する。
Claims (6)
- 高耐圧IC(Integrated Circuit)の機能と低耐圧ICの機能とを有する矩形状の1つの制御ICと、
前記制御ICの四方のうち三方において配置され、前記制御ICとワイヤのみを介して接続された複数のRC−IGBT(Reverse Conducting Insulated Gate Bipolar Transistor)と
を備え、
前記複数のRC−IGBTのそれぞれは、前記制御ICの1つの長辺及び2つの短辺と隣接して配設され、
それぞれが前記RC−IGBTが搭載された一端と、平面視において前記制御ICの前記長辺側に配列された他端と、を有する複数の第1フレームをさらに備える、パワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記第1フレームは、
水平方向に延設された延設部分と、水平方向に延設され、かつ前記RC−IGBTが搭載された第1ダイパッドと、を有し、
前記延設部分に対応させて水平方向に延設され、かつ前記制御ICが搭載された第2ダイパッドを有する第2フレームをさらに備え、
前記第1フレームにおいて前記延設部分と前記第1パッドとの間に段差が設けられることによって、前記第1ダイパッドは、前記第2ダイパッドよりも下方に位置する、パワーモジュール。 - 請求項2に記載のパワーモジュールであって、
前記第1フレームの前記第1ダイパッド下に配置された絶縁シートをさらに備える、パワーモジュール。 - 請求項1から請求項3のいずれか1項に記載のパワーモジュールであって、
前記RC−IGBTの代わりに、材質にシリコンを使用したMOSFET(Metal Oxide Semiconductor Field Effect Transistor)を備える、パワーモジュール。 - 請求項1から請求項3のいずれか1項に記載のパワーモジュールであって、
前記RC−IGBTの代わりに、材質にシリコンカーバイドを使用したMOSFET(Metal Oxide Semiconductor Field Effect Transistor)を備える、パワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記第1フレームは、
前記RC−IGBTが搭載されたダイパッドを有し、
前記RC−IGBTは、樹脂ダイボンド剤によって前記ダイパッドと接続されている、パワーモジュール。
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