KR100531175B1 - 에칭처리동안로딩변화를감소시키기위한방법 - Google Patents
에칭처리동안로딩변화를감소시키기위한방법 Download PDFInfo
- Publication number
- KR100531175B1 KR100531175B1 KR1019980025396A KR19980025396A KR100531175B1 KR 100531175 B1 KR100531175 B1 KR 100531175B1 KR 1019980025396 A KR1019980025396 A KR 1019980025396A KR 19980025396 A KR19980025396 A KR 19980025396A KR 100531175 B1 KR100531175 B1 KR 100531175B1
- Authority
- KR
- South Korea
- Prior art keywords
- chip
- pattern
- pattern density
- region
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000011068 loading method Methods 0.000 title claims description 22
- 238000012545 processing Methods 0.000 title description 5
- 238000005530 etching Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 15
- 239000004020 conductor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/926—Dummy metallization
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Weting (AREA)
Abstract
Description
포인트 1 | 편차 | 포인트 2 | 편차 | 포인트 3 | 편차 | |
로우 1 | 390 | 2.75 | 389 | 2.0 | 392 | 2.00 |
로우 2 | 389 | 1.75 | 389 | 2.0 | 392 | 2.00 |
로우 3 | 390 | 2.75 | 391 | 4.0 | 390 | - |
로우 4 | 381 | 5.25 | 379 | 8.0 | 386 | 4.00 |
AVG. | DEV. | AV. | DEV. | AV. | DEV. | |
387 | 253.13 | 387 | 4.0 | 390 | 2.00 |
포인트 4 | 편차 | 포인트 5 | 편차 | 포인트 6 | 편차 | |
로우 1 | 391 | 2.00 | 386 | 2.5 | 393 | 0.25 |
로우 2 | 383 | 6.00 | 389 | 0.5 | 392 | 0.75 |
로우 3 | 394 | 5.00 | 391 | 2.5 | 394 | 1.25 |
로우 4 | 388 | 1.00 | 388 | 0.5 | 392 | 0.75 |
AV. | DEV. | AV. | DEV. | AV. | DEV. | |
389 | 3.50 | 388.5 | 1.5 | 392.8 | 0.75 |
Claims (1)
- 에칭 공정 동안 로딩 변화(loading variation)를 감소시키는 방법으로서, 상기 방법은가장 조밀하게 패킹(pack)되는 전기 기능 소자를 가지는 칩 내부 영역의 패턴 밀도를 결정하는 단계;상기 가장 조밀하게 패킹되는 전기 기능 소자를 가지는 칩 내부 영역의 패턴 밀도와 실질적으로 동일한 패턴 밀도를 형성하도록 상기 가장 조밀하게 패킹되는 전기 기능 소자의 패턴 밀도보다 작은 패턴 밀도를 가지는 칩의 영역들에 패턴을 부가하는 단계; 및/또는상기 가장 조밀하게 패킹되는 전기 기능 소자를 가지는 칩 내부 영역의 패턴 밀도와 실질적으로 동일한 패턴 밀도를 형성하도록 비전기 기능 소자로 인하여 보다 높은 밀도를 가지는 영역에 블록커(blocker)를 부가하는 단계를 포함하고, 상기 블록커 및 패턴을 부가하는 단계는 상기 칩에 걸쳐 보다 일정한 패턴 밀도를 야기하여 에칭 동안 보다 균일한 칩에 걸친 라인폭을 야기하는 것을 특징으로 하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/884,862 | 1997-06-30 | ||
US08/884,862 US5899706A (en) | 1997-06-30 | 1997-06-30 | Method of reducing loading variation during etch processing |
US8/884,862 | 1997-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990007467A KR19990007467A (ko) | 1999-01-25 |
KR100531175B1 true KR100531175B1 (ko) | 2006-01-27 |
Family
ID=25385588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980025396A KR100531175B1 (ko) | 1997-06-30 | 1998-06-30 | 에칭처리동안로딩변화를감소시키기위한방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5899706A (ko) |
EP (1) | EP0890991A3 (ko) |
JP (1) | JPH1174365A (ko) |
KR (1) | KR100531175B1 (ko) |
CN (1) | CN1196179C (ko) |
TW (1) | TW407322B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6281049B1 (en) * | 1998-01-14 | 2001-08-28 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device mask and method for forming the same |
US6093631A (en) * | 1998-01-15 | 2000-07-25 | International Business Machines Corporation | Dummy patterns for aluminum chemical polishing (CMP) |
US6323086B2 (en) * | 1998-06-15 | 2001-11-27 | International Business Machines Corporation | Flash memory structure using sidewall floating gate having one side thereof surrounded by control gate |
KR100289813B1 (ko) * | 1998-07-03 | 2001-10-26 | 윤종용 | 노아형플렛-셀마스크롬장치 |
US6426233B1 (en) * | 1999-08-03 | 2002-07-30 | Micron Technology, Inc. | Uniform emitter array for display devices, etch mask for the same, and methods for making the same |
JP3912949B2 (ja) | 1999-12-28 | 2007-05-09 | 株式会社東芝 | フォトマスクの形成方法及び半導体装置の製造方法 |
US6251773B1 (en) | 1999-12-28 | 2001-06-26 | International Business Machines Corporation | Method of designing and structure for visual and electrical test of semiconductor devices |
US6413863B1 (en) * | 2000-01-24 | 2002-07-02 | Taiwan Semiconductor Manufacturing Company | Method to resolve the passivation surface roughness during formation of the AlCu pad for the copper process |
US6528883B1 (en) | 2000-09-26 | 2003-03-04 | International Business Machines Corporation | Shapes-based migration of aluminum designs to copper damascene |
US7312141B2 (en) * | 2000-09-26 | 2007-12-25 | International Business Machines Corporation | Shapes-based migration of aluminum designs to copper damascene |
US6596444B2 (en) | 2000-12-15 | 2003-07-22 | Dupont Photomasks, Inc. | Photomask and method for correcting feature size errors on the same |
US6690025B2 (en) * | 2001-05-11 | 2004-02-10 | Lightwave Microsystems Corporation | Devices for etch loading planar lightwave circuits |
US6867080B1 (en) * | 2003-06-13 | 2005-03-15 | Advanced Micro Devices, Inc. | Polysilicon tilting to prevent geometry effects during laser thermal annealing |
US7214551B2 (en) * | 2003-10-14 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple gate electrode linewidth measurement and photoexposure compensation method |
US7037628B2 (en) * | 2003-10-27 | 2006-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of a floating pattern loading system in mask dry-etching critical dimension control |
US20050136664A1 (en) * | 2003-12-22 | 2005-06-23 | Taiwan Semiconductor Manufacturing Co. | Novel process for improved hot carrier injection |
JP2006134939A (ja) * | 2004-11-02 | 2006-05-25 | Nec Electronics Corp | 半導体装置 |
US7667332B2 (en) * | 2004-11-05 | 2010-02-23 | Kabushiki Kaisha Toshiba | Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program product |
US7948094B2 (en) * | 2007-10-22 | 2011-05-24 | Rohm Co., Ltd. | Semiconductor device |
US7935638B2 (en) * | 2009-09-24 | 2011-05-03 | International Business Machines Corporation | Methods and structures for enhancing perimeter-to-surface area homogeneity |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5278105A (en) * | 1992-08-19 | 1994-01-11 | Intel Corporation | Semiconductor device with dummy features in active layers |
JPH065594A (ja) * | 1992-04-21 | 1994-01-14 | Nec Corp | 半導体装置及びその製造方法 |
US5618757A (en) * | 1996-01-30 | 1997-04-08 | Vlsi Technology, Inc. | Method for improving the manufacturability of the spin-on glass etchback process |
US5639697A (en) * | 1996-01-30 | 1997-06-17 | Vlsi Technology, Inc. | Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing |
JPH09311432A (ja) * | 1996-05-23 | 1997-12-02 | Nec Corp | 半導体装置のパターン形成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62123722A (ja) * | 1985-11-22 | 1987-06-05 | Nec Corp | 半導体装置 |
JPH01107556A (ja) * | 1987-10-20 | 1989-04-25 | Hitachi Ltd | パターン形成方法およびそれを用いた半導体装置 |
JPH01295443A (ja) * | 1987-12-28 | 1989-11-29 | Mitsubishi Electric Corp | 微細パターン形成方法 |
JPH07109878B2 (ja) * | 1988-11-16 | 1995-11-22 | 株式会社東芝 | 半導体記憶装置 |
JP2893771B2 (ja) * | 1989-12-08 | 1999-05-24 | セイコーエプソン株式会社 | 半導体装置 |
US5112761A (en) * | 1990-01-10 | 1992-05-12 | Microunity Systems Engineering | Bicmos process utilizing planarization technique |
JP2528737B2 (ja) * | 1990-11-01 | 1996-08-28 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
KR930008894B1 (ko) * | 1991-09-19 | 1993-09-16 | 삼성전자 주식회사 | 반도체장치의 금속배선구조 |
US5262354A (en) * | 1992-02-26 | 1993-11-16 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
JPH05304072A (ja) * | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
US5770884A (en) * | 1995-06-30 | 1998-06-23 | International Business Machines Corporation | Very dense integrated circuit package |
-
1997
- 1997-06-30 US US08/884,862 patent/US5899706A/en not_active Expired - Lifetime
-
1998
- 1998-06-18 TW TW087109759A patent/TW407322B/zh not_active IP Right Cessation
- 1998-06-29 EP EP98305131A patent/EP0890991A3/en not_active Withdrawn
- 1998-06-30 CN CNB981156231A patent/CN1196179C/zh not_active Expired - Lifetime
- 1998-06-30 JP JP10184377A patent/JPH1174365A/ja active Pending
- 1998-06-30 KR KR1019980025396A patent/KR100531175B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065594A (ja) * | 1992-04-21 | 1994-01-14 | Nec Corp | 半導体装置及びその製造方法 |
US5278105A (en) * | 1992-08-19 | 1994-01-11 | Intel Corporation | Semiconductor device with dummy features in active layers |
US5618757A (en) * | 1996-01-30 | 1997-04-08 | Vlsi Technology, Inc. | Method for improving the manufacturability of the spin-on glass etchback process |
US5639697A (en) * | 1996-01-30 | 1997-06-17 | Vlsi Technology, Inc. | Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing |
JPH09311432A (ja) * | 1996-05-23 | 1997-12-02 | Nec Corp | 半導体装置のパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1196179C (zh) | 2005-04-06 |
US5899706A (en) | 1999-05-04 |
CN1208952A (zh) | 1999-02-24 |
EP0890991A2 (en) | 1999-01-13 |
TW407322B (en) | 2000-10-01 |
KR19990007467A (ko) | 1999-01-25 |
JPH1174365A (ja) | 1999-03-16 |
EP0890991A3 (en) | 2000-05-10 |
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