KR100209345B1 - A semiconductor device and a method of manufacturing the same. - Google Patents

A semiconductor device and a method of manufacturing the same.

Info

Publication number
KR100209345B1
KR100209345B1 KR19980028220A KR19980028220A KR100209345B1 KR 100209345 B1 KR100209345 B1 KR 100209345B1 KR 19980028220 A KR19980028220 A KR 19980028220A KR 19980028220 A KR19980028220 A KR 19980028220A KR 100209345 B1 KR100209345 B1 KR 100209345B1
Authority
KR
South Korea
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
KR19980028220A
Other languages
English (en)
Inventor
Koichi Hashimoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR100209345B1 publication Critical patent/KR100209345B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
KR19980028220A 1993-09-20 1998-07-13 A semiconductor device and a method of manufacturing the same. KR100209345B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25638693A JP3256048B2 (ja) 1993-09-20 1993-09-20 半導体装置及びその製造方法
KR1019940023781A KR0185432B1 (ko) 1993-09-20 1994-09-17 반도체장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100209345B1 true KR100209345B1 (en) 1999-07-15

Family

ID=17291962

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019940023781A KR0185432B1 (ko) 1993-09-20 1994-09-17 반도체장치 및 그 제조방법
KR19980028220A KR100209345B1 (en) 1993-09-20 1998-07-13 A semiconductor device and a method of manufacturing the same.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019940023781A KR0185432B1 (ko) 1993-09-20 1994-09-17 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (2) US5717254A (ko)
EP (1) EP0645820B1 (ko)
JP (1) JP3256048B2 (ko)
KR (2) KR0185432B1 (ko)
DE (1) DE69433337T2 (ko)

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JP3256048B2 (ja) * 1993-09-20 2002-02-12 富士通株式会社 半導体装置及びその製造方法
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US6034401A (en) * 1998-02-06 2000-03-07 Lsi Logic Corporation Local interconnection process for preventing dopant cross diffusion in shared gate electrodes
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US6222240B1 (en) 1998-07-22 2001-04-24 Advanced Micro Devices, Inc. Salicide and gate dielectric formed from a single layer of refractory metal
US6140167A (en) * 1998-08-18 2000-10-31 Advanced Micro Devices, Inc. High performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formation
US6410967B1 (en) 1998-10-15 2002-06-25 Advanced Micro Devices, Inc. Transistor having enhanced metal silicide and a self-aligned gate electrode
US6084280A (en) * 1998-10-15 2000-07-04 Advanced Micro Devices, Inc. Transistor having a metal silicide self-aligned to the gate
US7098506B2 (en) * 2000-06-28 2006-08-29 Renesas Technology Corp. Semiconductor device and method for fabricating the same
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WO2001004946A1 (en) * 1999-07-08 2001-01-18 Hitachi, Ltd. Semiconductor device and method for producing the same
JP3467689B2 (ja) 2000-05-31 2003-11-17 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置
JP3675303B2 (ja) 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
US6535413B1 (en) * 2000-08-31 2003-03-18 Micron Technology, Inc. Method of selectively forming local interconnects using design rules
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KR20030079298A (ko) * 2002-04-03 2003-10-10 삼성전자주식회사 반도체 소자 및 그 제조방법
US7936062B2 (en) * 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
WO2010116653A1 (ja) * 2009-03-30 2010-10-14 Jsr株式会社 着色組成物、カラーフィルタ及びカラー液晶表示素子
US8587068B2 (en) * 2012-01-26 2013-11-19 International Business Machines Corporation SRAM with hybrid FinFET and planar transistors

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US5616934A (en) * 1993-05-12 1997-04-01 Micron Technology, Inc. Fully planarized thin film transistor (TFT) and process to fabricate same
JP3256048B2 (ja) * 1993-09-20 2002-02-12 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0794595A (ja) 1995-04-07
DE69433337D1 (de) 2003-12-24
EP0645820A2 (en) 1995-03-29
KR950010067A (ko) 1995-04-26
EP0645820B1 (en) 2003-11-19
DE69433337T2 (de) 2004-04-15
US5717254A (en) 1998-02-10
JP3256048B2 (ja) 2002-02-12
EP0645820A3 (en) 1996-07-31
KR0185432B1 (ko) 1999-03-20
US6160294A (en) 2000-12-12

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