JPWO2019208755A1 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
- Publication number
- JPWO2019208755A1 JPWO2019208755A1 JP2020515593A JP2020515593A JPWO2019208755A1 JP WO2019208755 A1 JPWO2019208755 A1 JP WO2019208755A1 JP 2020515593 A JP2020515593 A JP 2020515593A JP 2020515593 A JP2020515593 A JP 2020515593A JP WO2019208755 A1 JPWO2019208755 A1 JP WO2019208755A1
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- region
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000001681 protective effect Effects 0.000 claims abstract description 50
- 230000002093 peripheral effect Effects 0.000 claims abstract description 34
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 8
- 229920001721 polyimide Polymers 0.000 claims description 85
- 238000006243 chemical reaction Methods 0.000 claims description 40
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920005749 polyurethane resin Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 41
- 229910010271 silicon carbide Inorganic materials 0.000 description 40
- 239000010410 layer Substances 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 14
- 238000007747 plating Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002250 progressing effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Inverter Devices (AREA)
Abstract
Description
図1は、本実施の形態1におけるMOSFET101(半導体装置)の構成を概略的に示す平面図である。図2は、図1のMOSFET101の構成を、ポリイミド膜20(保護絶縁膜)の図示を省略しつつ概略的に示す平面図である。図3は、ポリイミド膜20(図1)の構成を説明する平面図である。なお図3においては、図を見やすくするために、ポリイミド膜20にドット模様が付されている。
図9は、比較例のMOSFET100の構成を示す平面図である。図10は、MOSFET100(図9)が有するポリイミド膜20の構成を説明する平面図である。
本実施の形態のMOSFET101によれば、上記比較例と異なり、ポリイミド膜20は第1内側部分21(図3)を有している。第1内側部分21は、ポリイミド膜20の外周部分29に囲まれた内側領域RBを横断しているので、第1内側部分21の一方端および他方端の各々はポリイミド膜20の外周部分29につながれている。これにより、第1内側部分21の一方端および他方端においてポリイミド膜20の劣化が局所的に進行することが抑制される。よって、ポリイミド膜20の劣化を抑制することができる。
図11は、本実施の形態2におけるMOSFET102(半導体装置)の構成を概略的に示す平面図である。図12は、ポリイミド膜20(図11)の構成を説明する平面図である。MOSFET102においては、ポリイミド膜20は、外周部分29および第1内側部分21に加えて、少なくとも1つの第2内側部分22を有している。第2内側部分22の各々は、外周部分29と第1内側部分21との間を横断している。以下、より具体的に説明する。
図13は、本実施の形態3におけるMOSFET103(半導体装置)の構成を概略的に示す平面図である。図14は、図13の線XIV−XIVに沿う概略的な部分断面図である。
図19は、MOSFET103(図14)の変形例のMOSFET103V(半導体装置)の構成を概略的に示す部分断面図である。MOSFET103Vは、ソース電極パッド91およびゲート電極パッド92上に、めっき層96(金属層)を有している。めっき層96は、特に、ソース電極パッド91およびゲート電極パッド92がAlまたはAl合金から形成されている場合に望ましい。また電極膜93上にも同様のめっき層が設けられてよい。めっき層96は、ポリイミド膜20の内縁に接している。めっき層96は、無電解めっき層であることが好ましく、例えば無電解ニッケルリンめっき層である。無電解めっき法が用いられる場合、開口部OPを有するポリイミド膜20の形成後に、ポリイミド膜20の開口部OPの内側にのみめっき層96を形成することが容易に可能である。めっき層96は平面視において、開口部OPの全体に配置されてよい。また、めっき層96は厚み方向において、ポリイミド膜20の開口部OPによって構成された空間を部分的にのみ埋めていることが好ましい。
図20は、本実施の形態4におけるMOSFET104の構成を概略的に示す部分断面図である。MOFET101(図4:実施の形態1)においてはゲート電極6がプレーナ構造を有しているが、本実施の形態においては、ゲート電極6はトレンチ構造を有している。以下、より具体的に説明する。
図21は、本実施の形態5による電力変換装置700が適用された電力変換システムの構成を概略的に示すブロック図である。
Claims (10)
- シリコンの線膨張率よりも高い線膨張率を有する半導体からなり、第1導電型を有するソース領域と、前記第1導電型と異なる第2導電型を有するベース領域と、前記ベース領域によって前記ソース領域から隔てられ前記第1導電型を有するドリフト層とを含み、前記ソース領域からなる部分を含む主面を有する半導体基板と、
前記半導体基板の前記ベース領域を覆うゲート絶縁膜と、
前記ゲート絶縁膜を介して前記半導体基板の前記ベース領域に面するゲート電極と、
前記半導体基板の前記ソース領域に電気的に接続され、前記半導体基板の前記主面上に設けられた第1電極膜と、
前記ゲート電極に電気的に接続され、前記第1電極膜から離れて前記半導体基板の前記主面上に設けられた第2電極膜と、
前記第1電極膜から離れて前記半導体基板の前記主面上に設けられた第3電極膜と、
前記第1電極膜、前記第2電極膜および前記第3電極膜が設けられた前記半導体基板の前記主面上に、前記第1電極膜および前記第2電極膜の各々の一部のみが覆われるようにかつ前記第3電極膜の少なくとも一部が覆われるように設けられ、熱硬化性樹脂からなる保護絶縁膜と、
を備え、
前記半導体基板の前記主面は、外周領域と、前記外周領域に囲まれた内側領域とを有し、前記保護絶縁膜は、前記外周領域を覆う外周部分と、前記第3電極膜の少なくとも一部を覆い前記内側領域を横断する第1内側部分とを有する、半導体装置。 - 前記保護絶縁膜は、前記外周部分と前記第1内側部分との間を横断する第2内側部分を有する、請求項1に記載の半導体装置。
- 前記保護絶縁膜は、前記半導体基板の前記主面の半分未満のみを覆う開口部を有する、請求項1または2に記載の半導体装置。
- 前記第3電極膜は前記第2電極膜から離れている、請求項1から3のいずれか1項に記載の半導体装置。
- 前記第3電極膜に接続され、前記保護絶縁膜の前記第1内側部分に覆われた、少なくとも1つの電気的素子をさらに備える、請求項1から4のいずれか1項に記載の半導体装置。
- 前記少なくとも1つの電気的素子は、温度センサ素子を含む、請求項5に記載の半導体装置。
- 前記少なくとも1つの電気的素子は、ダイオード素子、バイポーラトランジスタ素子、抵抗素子および容量素子の少なくともいずれかの素子を含む、請求項5または6に記載の半導体装置。
- 前記ゲート電極は、プレーナ構造およびトレンチ構造のいずれかの構造を有する、請求項1から7のいずれか1項に記載の半導体装置。
- 前記保護絶縁膜は、ポリイミド樹脂、シリコーン樹脂、エポキシ樹脂およびポリウレタン樹脂の少なくともいずれかからなる、請求項1から8のいずれか1項に記載の半導体装置。
- 請求項1から9のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記半導体装置を駆動する駆動信号を前記半導体装置に出力する駆動回路と、
前記駆動回路を制御する制御信号を前記駆動回路に出力する制御回路と、
を備える、電力変換装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022177095A JP7446389B2 (ja) | 2018-04-27 | 2022-11-04 | 半導体装置および電力変換装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018087136 | 2018-04-27 | ||
JP2018087136 | 2018-04-27 | ||
PCT/JP2019/017854 WO2019208755A1 (ja) | 2018-04-27 | 2019-04-26 | 半導体装置および電力変換装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022177095A Division JP7446389B2 (ja) | 2018-04-27 | 2022-11-04 | 半導体装置および電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019208755A1 true JPWO2019208755A1 (ja) | 2020-12-10 |
JP7218359B2 JP7218359B2 (ja) | 2023-02-06 |
Family
ID=68295014
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020515593A Active JP7218359B2 (ja) | 2018-04-27 | 2019-04-26 | 半導体装置および電力変換装置 |
JP2022177095A Active JP7446389B2 (ja) | 2018-04-27 | 2022-11-04 | 半導体装置および電力変換装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022177095A Active JP7446389B2 (ja) | 2018-04-27 | 2022-11-04 | 半導体装置および電力変換装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11915988B2 (ja) |
JP (2) | JP7218359B2 (ja) |
CN (1) | CN112005381B (ja) |
DE (1) | DE112019002203T5 (ja) |
WO (1) | WO2019208755A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7314871B2 (ja) | 2020-07-09 | 2023-07-26 | 新東工業株式会社 | 強度計測装置及び強度計測方法 |
JP7381424B2 (ja) | 2020-09-10 | 2023-11-15 | 株式会社東芝 | 半導体装置 |
JP7471199B2 (ja) | 2020-11-12 | 2024-04-19 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法 |
CN116686092A (zh) * | 2021-01-19 | 2023-09-01 | 三菱电机株式会社 | 半导体装置及半导体模块 |
WO2022196273A1 (ja) * | 2021-03-17 | 2022-09-22 | ローム株式会社 | 半導体装置 |
WO2023013223A1 (ja) * | 2021-08-03 | 2023-02-09 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP7504066B2 (ja) | 2021-08-17 | 2024-06-21 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048889A (ja) * | 2005-08-09 | 2007-02-22 | Fuji Electric Holdings Co Ltd | 半導体装置 |
WO2011027523A1 (ja) * | 2009-09-03 | 2011-03-10 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2011129662A (ja) * | 2009-12-17 | 2011-06-30 | Sanyo Electric Co Ltd | 半導体装置 |
WO2011102547A1 (ja) * | 2010-02-19 | 2011-08-25 | 新日本製鐵株式会社 | 電力用半導体素子 |
JP2011210801A (ja) * | 2010-03-29 | 2011-10-20 | Mitsubishi Electric Corp | 電力半導体装置 |
WO2014155739A1 (ja) * | 2013-03-29 | 2014-10-02 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2015174531A1 (ja) * | 2014-05-16 | 2015-11-19 | ローム株式会社 | 半導体装置 |
JP2017054873A (ja) * | 2015-09-08 | 2017-03-16 | トヨタ自動車株式会社 | 半導体装置 |
JP2017079324A (ja) * | 2015-10-19 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017169086A1 (ja) * | 2016-03-30 | 2017-10-05 | 三菱電機株式会社 | 半導体装置およびその製造方法、電力変換装置 |
WO2018074425A1 (ja) * | 2016-10-17 | 2018-04-26 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3793407B2 (ja) | 2000-09-19 | 2006-07-05 | 株式会社日立製作所 | 電力変換装置 |
JP5694119B2 (ja) * | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
DE112014001741T8 (de) * | 2013-03-29 | 2016-02-18 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung |
JP5930130B2 (ja) * | 2013-07-11 | 2016-06-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP6463214B2 (ja) * | 2014-05-08 | 2019-01-30 | 三菱電機株式会社 | 半導体装置 |
JP6526981B2 (ja) * | 2015-02-13 | 2019-06-05 | ローム株式会社 | 半導体装置および半導体モジュール |
CN106601710B (zh) * | 2015-10-19 | 2021-01-29 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
JP2017168602A (ja) | 2016-03-15 | 2017-09-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6627973B2 (ja) * | 2016-06-03 | 2020-01-08 | 富士電機株式会社 | 半導体装置 |
-
2019
- 2019-04-26 CN CN201980027280.6A patent/CN112005381B/zh active Active
- 2019-04-26 DE DE112019002203.2T patent/DE112019002203T5/de active Pending
- 2019-04-26 WO PCT/JP2019/017854 patent/WO2019208755A1/ja active Application Filing
- 2019-04-26 US US17/048,314 patent/US11915988B2/en active Active
- 2019-04-26 JP JP2020515593A patent/JP7218359B2/ja active Active
-
2022
- 2022-11-04 JP JP2022177095A patent/JP7446389B2/ja active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048889A (ja) * | 2005-08-09 | 2007-02-22 | Fuji Electric Holdings Co Ltd | 半導体装置 |
WO2011027523A1 (ja) * | 2009-09-03 | 2011-03-10 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2011129662A (ja) * | 2009-12-17 | 2011-06-30 | Sanyo Electric Co Ltd | 半導体装置 |
WO2011102547A1 (ja) * | 2010-02-19 | 2011-08-25 | 新日本製鐵株式会社 | 電力用半導体素子 |
JP2011210801A (ja) * | 2010-03-29 | 2011-10-20 | Mitsubishi Electric Corp | 電力半導体装置 |
WO2014155739A1 (ja) * | 2013-03-29 | 2014-10-02 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2015174531A1 (ja) * | 2014-05-16 | 2015-11-19 | ローム株式会社 | 半導体装置 |
JP2015220334A (ja) * | 2014-05-16 | 2015-12-07 | ローム株式会社 | 半導体装置 |
JP2017054873A (ja) * | 2015-09-08 | 2017-03-16 | トヨタ自動車株式会社 | 半導体装置 |
JP2017079324A (ja) * | 2015-10-19 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017169086A1 (ja) * | 2016-03-30 | 2017-10-05 | 三菱電機株式会社 | 半導体装置およびその製造方法、電力変換装置 |
WO2018074425A1 (ja) * | 2016-10-17 | 2018-04-26 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2023002835A (ja) | 2023-01-10 |
JP7218359B2 (ja) | 2023-02-06 |
US20210166984A1 (en) | 2021-06-03 |
DE112019002203T5 (de) | 2021-01-07 |
WO2019208755A1 (ja) | 2019-10-31 |
CN112005381B (zh) | 2024-05-14 |
JP7446389B2 (ja) | 2024-03-08 |
CN112005381A (zh) | 2020-11-27 |
US11915988B2 (en) | 2024-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7446389B2 (ja) | 半導体装置および電力変換装置 | |
JP6253854B1 (ja) | 半導体装置およびその製造方法、電力変換装置 | |
US20200194554A1 (en) | Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter | |
JP6641523B2 (ja) | 半導体装置および電力変換装置 | |
JP6870119B2 (ja) | 半導体装置および電力変換装置 | |
US20210288140A1 (en) | Semiconductor device and power converter | |
JP6995209B2 (ja) | 半導体装置および電力変換装置 | |
JPWO2018207449A1 (ja) | 半導体装置および電力変換装置 | |
JP2021093496A (ja) | 炭化珪素半導体装置および電力変換装置 | |
CN113330579B (zh) | 半导体装置以及电力变换装置 | |
JP7047981B1 (ja) | 炭化珪素半導体装置および電力変換装置 | |
US20220059688A1 (en) | Power semiconductor device and power converter | |
JP7069358B2 (ja) | 半導体装置および電力変換装置 | |
JP7004117B1 (ja) | 炭化珪素半導体装置および電力変換装置 | |
WO2021064944A1 (ja) | 半導体装置および電力変換装置 | |
CN113557607B (zh) | 碳化硅半导体装置以及电力变换装置 | |
JP2018049912A (ja) | 半導体装置および電力変換装置 | |
JP7062143B1 (ja) | 半導体装置及び電力変換装置 | |
US20230053501A1 (en) | Silicon carbide semiconductor device and power conversion apparatus | |
WO2022034636A1 (ja) | 炭化珪素半導体装置および電力変換装置 | |
CN110176487B (zh) | 半导体装置及其制造方法、电力变换装置 | |
WO2022039276A1 (ja) | 半導体装置 | |
CN117693818A (zh) | 半导体装置、电力变换装置以及半导体装置的制造方法 | |
JP2020035946A (ja) | 電力用半導体装置、電力変換装置、電力用半導体装置の製造方法、および、電力変換装置の製造方法 | |
CN115732419A (zh) | 半导体装置、半导体装置的制造方法及电力转换装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200501 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200501 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210916 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220325 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221104 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20221104 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20221114 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20221115 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230125 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7218359 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |