JP7069358B2 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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Description
<半導体装置の構成>
図1~図5に示されるように、実施の形態1に係る半導体装置1は、基板10、基板10の内部に配置されている第1半導体素子および第2半導体素子とを備える。
半導体装置1は、例えば以下の方法により製造される。まず、コア材11が準備される。コア材11には、IGBT素子13a1,13a2、および環流ダイオード13b1,13b2の形状に応じた開口部が形成されている。上記開口部は、例えば板材に対し任意の加工機による穴開き加工により形成される。次に、コア材11の上記開口部内に、IGBT素子13a1,13a2、および環流ダイオード13b1,13b2が配置され、かつ上記開口部内が封止樹脂材で充填される。これにより、基板10が形成される。
図6~図8に示されるように、実施の形態2に係る半導体装置1は、実施の形態1に係る半導体装置1と基本的に同様の構成を備えるが、スナバ回路素子20をさらに備える点で異なる。
図9~図11に示されるように、実施の形態3に係る半導体装置1は、実施の形態2に係る半導体装置1と基本的に同様の構成を備えるが、第1電流検出部21をさらに備える点で異なる。
実施の形態4に係る半導体装置1は、実施の形態3に係る半導体装置1と基本的に同様の構成を備えるが、第1配線部21Bおよび第2配線部21Cの少なくとも一方が基板10の内部に配置されている部分を有している点で異なる。図12および図13には、第2配線部21Cが基板10の内部に配置されている半導体装置1が示されている。
<変形例>
実施の形態4に係る半導体装置1は、以下のような構成を備えていてもよい。実施の形態4に係る半導体装置1では、第1配線部21Bが基板10の内部に埋設された埋設部分を有しており、第2配線部21Cが第1面10A上に配置されていていてもよい。
図15に示されるように、実施の形態5に係る半導体装置1は、実施の形態3に係る半導体装置1と基本的に同様の構成を備えるが、第1電流検出部21のシャント抵抗21Aが基板10の内部に配置されている点で異なる。
図16に示されるように、実施の形態6に係る半導体装置1は、実施の形態2に係る半導体装置1と基本的に同様の構成を備えるが、第2電流検出部24をさらに備える点で異なる。
<変形例>
実施の形態6に係る半導体装置1では、磁束検出部24Aが第7ビア18a1および第9ビア18b1を囲むように設けられていてもよい。このようにすれば、第2電流検出部24は、第7ビア18a1および第9ビア18b1に流れる電流の変化を検出できる。
実施の形態7に係る電力変換装置200は、上述した実施の形態1~6のいずれかにかかる半導体装置1を三相のインバータに適用したものである。
Claims (12)
- 第1面、および前記第1面とは反対側に位置する第2面を有する基板と、
前記第1面上に形成されている第1電極、第2電極および第3電極と、
前記基板の内部に配置されている第1半導体素子および第2半導体素子と、
前記第1電極と前記第1半導体素子との間を電気的に接続する第1配線群と、
前記第1半導体素子と前記第2電極との間を電気的に接続する第2配線群と、
前記第3電極と前記第2半導体素子との間を電気的に接続する第3配線群と、
前記第2半導体素子と前記第2電極との間を電気的に接続する第4配線群とを備え、
前記第1配線群は、前記基板の内部に配設されており、前記第1面と交差する方向に延びる第1接続部を含み、
前記第4配線群は、前記基板の内部に配設されており、前記交差する方向に延びる第2接続部を含み、
前記第1電極と前記第3電極との間に電圧が印加されて前記第2電極に電流が流れるときに、前記第1接続部を流れる電流の向きが、前記第2接続部を流れる電流の向きとは逆方向になるように設けられている、半導体装置。 - 前記第1配線群は、前記第2面上に形成されている第4電極をさらに含み、
前記第4配線群は、前記第2面上に形成されている第5電極をさらに含み、
前記第1接続部は、前記第1電極と前記第4電極とを接続しており、
前記第2接続部は、前記第2電極と前記第5電極とを接続している、請求項1に記載の、半導体装置。 - 前記第1電極および前記第2電極は、間隔を隔てて対向する第1対の対向辺を有する第1対の対向領域を有し、
前記第4電極および前記第5電極は、間隔を隔てて対向する第2対の対向辺を有する第2対の対向領域を有し、
前記第1接続部および前記第2接続部の各一端は、前記第1対の対向領域に接続されており、
前記第1接続部および前記第2接続部の各他端は、前記第2対の対向領域に接続されている、請求項2に記載の半導体装置。 - 前記第1電極と前記第3電極とを接続するスナバ回路素子をさらに備え、
前記スナバ回路素子は、平面視において前記第1接続部と重なるように配置されている、請求項1~3のいずれか1項に記載の半導体装置。 - 前記第3電極は、前記スナバ回路素子と接続されている第1部分と、前記第2半導体素子と接続されている第2部分とを有しており、
前記第1部分と前記第2部分との間に配置されており前記第3電極を流れる電流の変化を検出する第1電流検出部をさらに備える、請求項4に記載の半導体装置。 - 前記第1半導体素子および前記第2半導体素子を制御する制御部をさらに備え、
前記第1電流検出部は、前記第1部分と接続されている一端と前記第2部分と接続されている他端とを有するシャント抵抗と、前記シャント抵抗の前記一端と前記制御部とを接続する第1配線部と、前記シャント抵抗の前記他端と前記制御部とを接続する第2配線部とを含む、請求項5に記載の半導体装置。 - 前記シャント抵抗、前記第1配線部、および前記第2配線部は、前記第1面上に配置されている、請求項6に記載の半導体装置。
- 前記第1配線部および前記第2配線部の少なくとも一方は、前記基板の内部に配置されている部分を有している、請求項6に記載の半導体装置。
- 前記シャント抵抗は、前記基板の内部に配置されている、請求項8に記載の半導体装置。
- 前記第1電流検出部を構成する材料は、抵抗温度係数が比較的低い材料を含み、
前記第1電流検出部は、メッキまたは堆積により形成されている、請求項5~9のいずれか1項に記載の半導体装置。 - 前記基板の内部に配置され、かつ前記第2半導体素子と前記第3電極とを接続する第3接続部と、
前記第3接続部を流れる電流の変化を検出する第2電流検出部とをさらに備え、
前記第2電流検出部は、磁束の変化を検出する磁束検出部を有し、
前記磁束検出部は、前記基板の内部に配置され、かつ前記第3接続部を囲むように設けられている、請求項4に記載の半導体装置。 - 請求項1~11のいずれか1項に記載の半導体装置を含み、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、を備えた電力変換装置。
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