JPWO2006043531A1 - 基板支持・搬送用トレイ - Google Patents

基板支持・搬送用トレイ Download PDF

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JPWO2006043531A1
JPWO2006043531A1 JP2006542992A JP2006542992A JPWO2006043531A1 JP WO2006043531 A1 JPWO2006043531 A1 JP WO2006043531A1 JP 2006542992 A JP2006542992 A JP 2006542992A JP 2006542992 A JP2006542992 A JP 2006542992A JP WO2006043531 A1 JPWO2006043531 A1 JP WO2006043531A1
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substrate
substrate support
transport tray
heat treatment
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真果 柴垣
真果 柴垣
保美 榑松
保美 榑松
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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Abstract

【課題】基板に対する加熱処理が行われる処理室に配備されている基板支持部、特に、基板加熱用の加熱手段を内蔵している基板支持部の上に載置可能で、上側に基板が置かれる基板支持・搬送用のトレイであって、基板への加熱処理の際に、基板へのより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板の温度が低下するまで待つことなしに、簡単に、前記基板支持部から取り除き、加熱処理の行われた処理室から他へ搬送していくことが可能な基板支持・搬送用トレイを提供する。【解決手段】上面側に円盤状の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向かって延びる筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状部とを備えている基板支持・搬送用トレイ。【選択図】図１

Description

この発明は、半導体基板に対する加熱処理が行われる処理室に配備されている基板支持部材の上に載置され、上側に基板が置かれる基板支持・搬送用のトレイに関する。特に、基板加熱処理用の加熱手段を内部に備えている基板支持部材の上に載置され、上側に半導体基板が置かれる基板支持・搬送用のトレイに関する。
半導体製造装置において、真空状態あるいは大気圧状態の処理室内で半導体基板への加熱処理を行う場合に、半導体基板への均一な加熱や、加熱処理完了後の半導体基板の移送等を考慮して、上部側に基板支持部を有する基板支持・搬送用トレイの上に半導体基板を置いた状態で、半導体基板への加熱処理が行われることがある。
例えば、図７（ａ）図示のように、上部側に基板支持部を有する基板支持・搬送用トレイ１８の上に基板１を置き、これを、半導体基板を加熱する加熱手段４が内蔵されている基板支持部材２の上において、真空状態あるいは大気圧状態で、基板１への加熱処理が行われることがある。
この図７（ａ）図示の形態は、基板１を均一に加熱することを目的として基板支持・搬送用トレイ１８を用いているものであるが、加熱処理が完了した基板１を処理室（不図示）内から取り出し、次に加熱処理を受ける新たな基板を処理室内に搬送して加熱処理を行おうとするときに、基板支持・搬送用トレイ１８に搬送用ロボット等が支持できる箇所がない。そこで、結局、基板１の温度が低下するまで搬送処理を行うことができないという問題があった。
そこで、図７（ｂ）図示のように、上部側に基板支持部を有し、外周縁１８ｄが、基板を加熱する加熱手段４が内蔵されている基板支持部材２の外周縁２ａより大きい、平板状で大径の基板支持・搬送用トレイ１８ａが採用されるようになっている。このような先行技術は、例えば、特開２００２−２６９５などに記載されている。
このような形態の基板支持・搬送用トレイ１８ａの場合、外周縁１８ｄが、基板１を加熱する加熱手段４が内蔵されている基板支持部材２の外周縁２ａより大きいので、搬送用ロボット等の先端が二股になっているフォークで、基板支持・搬送用トレイ１８ａの外周縁側１８ｃの下側（図７（ｂ）中、下側）を支持することができる。
そこで、基板１を加熱する処理が完了したならば、基板１の温度が低下するのを待つことなしに、搬送用ロボット等のフォークの二股になっている先端部分で基板支持・搬送用トレイ１８ａの外周縁側１８ｃの下側（図４（ｂ）中、下側）を支持して、基板支持・搬送用トレイ１８ａを基板支持部材２の上から取り外すことができる。そして、次に加熱処理が行われる新たな基板が基板支持部の上に置かれている別の基板支持・搬送用トレイ１８ａを同様にして搬送してきて基板支持部材２の上に置くことにより、新たな基板の加熱処理を開始することができる。これにより、効率よく複数枚の基板の加熱処理を行うことができる。
しかし、基板を加熱する加熱手段４が内蔵されている基板支持部材２の上に、図７（ｂ）図示の形態のように、外周縁１８ｄが基板支持部材２の外周縁２ａより大きい、平板状で大径の基板支持・搬送用トレイ１８ａが置かれて基板１の加熱処理が行われる場合には、基板支持部材２の外周縁２ａより突出している基板支持・搬送用トレイ１８ａの外周縁側１８ｃから熱が放射される。そこで、基板支持・搬送用トレイ１８ａの中心部側と、基板支持・搬送用トレイ１８ａの外周縁側１８ｃとの間で温度が不均一になり、この結果、基板１の均一な加熱を行うことが難しくなるという問題があった。
この発明は、真空状態あるいは大気圧状態で基板（半導体基板）に対する加熱処理が行われる処理室に配備されている基板支持部材、特に、基板加熱用の加熱手段を内蔵している基板支持部材の上に載置され、上側に基板（半導体基板）が置かれる基板支持・搬送用のトレイであって、基板（半導体基板）への加熱処理の際に、基板へのより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板（半導体基板）の温度が低下するまで待つことなしに、簡単に、前記基板支持部材から取り除き、加熱処理の行われた処理室から他へ搬送していくことが可能で、効率よく複数枚の基板の加熱処理を行うことができる基板支持・搬送用トレイを提供することを目的としている。
前記課題を解決するため、この発明が提案する基板支持・搬送用トレイは、基板（半導体基板）に対する加熱処理が行われる処理室に配備されている基板支持部材の上に載置され、上側に基板が置かれる基板支持・搬送用のトレイであって、上部側に円盤状の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向かって延びる筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状部とを備えていることを特徴とするものである。
この発明によれば、真空状態あるいは大気圧状態で基板（半導体基板）に対する加熱処理が行われる処理室に配備されている基板支持部材、特に、基板加熱用の加熱手段を内蔵している基板支持部材の上に載置され、上側に基板（半導体基板）が置かれる基板支持・搬送用のトレイであって、基板への加熱処理の際に、基板へのより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板の温度が低下するまで待つことなしに、簡単に、前記基板支持部材から取り除き、加熱処理の行われた処理室から他へ搬送していくことが可能で、効率よく複数枚の基板の加熱処理を行うことができる基板支持・搬送用トレイを提供することができる。
以下、添付図面を参照して本発明の好ましい実施形態を説明する。
図１は、この発明の第一の実施例を説明するものである。
基板１に対する加熱処理が行われる処理室１１の内部に基板支持部材２が配備されている。基板支持部材２は、電子衝撃加熱用の熱電子発生手段や、赤外線ランプ加熱用の赤外線ランプなどからなる基板加熱用の加熱手段４を内部に備えている。これによって、処理室１１内で基板１に対する加熱処理が行われる。
処理室１１内で基板１に対して行われる加熱処理は、処理室１１内を所定の真空状態にして行うこともできるし、処理室１１内を大気圧状態にしておいて行うこともできる。
本発明の基板支持・搬送用トレイ８は、この基板支持部２の上に載置され、上側に基板（例えば、Ｓｉ基板や、ＳｉＣ基板のような半導体基板）が置かれるものである。
基板支持・搬送用トレイ８はその上部側に円盤状の基板支持部８ｅ（図３（ａ））を有している。この円盤状の基板支持部８ｅの周縁からは下側に向かって筒状側壁部９が延びている。
筒状側壁部９は、図１図示のように、円柱状の基板支持部材２の外周に沿って、円盤状の基板支持部８ｅの周縁から鉛直方向下側（図１中、下側）に延びる円筒状にすることができる。また、図２図示のように、円柱状の基板支持部材２の外周に沿って、円盤状の基板支持部８ｅの周縁から鉛直方向下側（図１中、下側）に向かうに従ってしだいに径が大きくなるように、斜めに拡がっていく逆漏斗状の形態をしているものでもよい。
ただし、加熱手段４によって基板支持部材２を介して加熱が行う際に、基板支持・搬送用トレイ８との間に生じる温度差、基板支持・搬送用トレイ８の面内の温度分布を小さくし、基板支持・搬送用トレイ８面内でのより均一な加熱を可能にする上では、筒状側壁部９を、図１図示のように、基板支持部材２の外周に沿って、円盤状の基板支持部８ｅの周縁から延びる円筒状にすることが好ましい。
筒状側壁部９の下端側からは、径方向で外側に向かって環状部１０が延びている。
円盤状の基板支持部８ｅの上に図１図示のように基板１が載置されている基板支持・搬送用トレイ８を搬送ロボット等によって持ち上げ、搬送する際には、搬送ロボット等の先端のアーム２３、２４に連結されているフォーク基端部２２から二股に分かれて延びるフォーク２１ａ、２１ｂが図６（ａ）、（ｂ）図示のように環状部１０の下側を支持する。
そこで、基板１を加熱する処理が完了したならば、基板１の温度が低下するのを待つことなしに、搬送用ロボット等のフォーク２１ａ、２１ｂで基板支持・搬送用トレイ８の環状部１０の下側を支持して、基板支持・搬送用トレイ８を基板支持部材２の上から取り外すことができる。そして、次に加熱処理が行われる新たな基板が円盤状の基板支持部８ｅの上に置かれている別の基板支持・搬送用トレイ８を同様にして搬送してきて基板支持部材２の上に置くことにより、新たな基板の加熱処理を開始することができる。これにより、効率よく複数枚の基板の加熱処理を行うことができる。
本発明の基板支持・搬送用トレイ８は、図１、図２図示のように、上部側に備えられている円盤状の基板支持部８ｅの周縁から下側に向かって延びる筒状側壁部９を有している。そこで、加熱手段４によって基板支持部材２を介して加熱が行われる際に、図７（ａ）、（ｂ）図示のような形態の従来の基板支持・搬送用トレイ１８、１８ａの場合に比較して、基板支持部材２と基板支持・搬送用トレイ８との間に生じる温度差を小さくすることができる。更に、基板支持・搬送用トレイ８の面内の温度分布も、図７（ａ）、（ｂ）図示のような形態の従来の基板支持・搬送用トレイ１８、１８ａの場合に比較して小さくすることができる。そこで、基板支持・搬送用トレイ８面内でのより均一な加熱を可能にすることができた。
なお、図３、図４のように、環状部１０を備えていない、筒状側壁部９のみが配備されている形態にしても前述した効果を発揮させることができる。図３図示の実施形態は、図１図示の実施形態において、環状部１０を備えておらず、筒状側壁部９のみを備えているものである。図４図示の実施形態は、図２図示の実施形態において、環状部１０を備えておらず、筒状側壁部９のみを備えているものである。ただし、図１、図２図示の実施形態のように、環状部１０をも備えている形態にした方が有利である。発熱体４を内部に備えている基板支持部材２と基板支持・搬送用トレイ８との間に生じる温度差を一層小さくし、基板支持・搬送用トレイ８面内の温度分布を更に小さくして、基板支持・搬送用トレイ８面内でのより均一な加熱を行う上で好ましいからである。
図５（ａ）は、加熱処理が行われる際に、基板支持・搬送用トレイ８の上にキャップ５が置かれ、基板支持・搬送用トレイ８上に載置されている基板１（例えば、ＳｉＣ基板）がキャップ５によって覆われ、このキャップ５と基板支持・搬送用トレイ８とによって基板１が密封されるようになっているものである。
これによって、基板１を加熱処理するにあたって、基板１が配置されている空間３をキャップ５で密封するようにしたのである。すなわち、加熱処理する基板１が載置されている基板支持・搬送用トレイ８の上にキャップ５を被せることにより基板１が配置されている空間３をキャップ５で密封するようにしたのである。
このようにすれば、加熱処理の際には前記のように基板１が配置されている空間３が密封され、また、キャップ５からの輻射熱が加わるので、より効率よく基板１を加熱することができる。
図５（ｂ）が、図５（ａ）図示の実施形態と相違しているのは、キャップ５が側壁５ｃの下端側に基板支持・搬送用トレイ８の上端外周に掛止される掛止段部６を有し、掛止段部６におけるキャップ５の側壁内径Ｒ２が、基板支持・搬送用トレイ８の筒状側壁部９の外径Ｒ３より少なくともプラス公差分大きくなっている点である。
すなわち、図５（ｂ）に図示されている本発明の基板支持・搬送用トレイ８は、前述した本発明の基板支持・搬送用トレイ８が、上側に基板１が配置される基板支持部の上に配置されて、基板支持部の上側に基板１が配置されている空間３を密封するキャップであって、下端側に基板支持部の上端外周に掛止される掛止段部６を有し、掛止段部６におけるキャップの側壁内径（Ｒ２）が、基板支持部の上端の外径（Ｒ３）より少なくともプラス公差分大きくなっているキャップ５と組み合わされているものである。
これによって、加熱処理が行われた際に、キャップ５、基板支持・搬送用トレイ８の熱膨張により、基板１が配置されている空間３の密封状態が高められる。
図５（ｃ）が、図５（ｂ）図示の実施形態と相違しているのは、キャップ５が、キャップ本体５ａの表面にコーティング層５ｂが形成されている点である。
キャップ本体５ａの表面にコーティングを施すことにより、加熱処理の間におけるキャップ５からのガス放出や、キャップ５を形成している材質の飛散を抑制し、基板１や、処理室１１の内面が汚染されることを防止することを目的としたものである。
コーティング層５ｂはガス放出を防止できる材質、例えば、熱分解炭素（Pyrolytic Graphite、Pyrolytic Carbon）で形成することができ、コーティング層５ｂの厚みは１０〜５０μｍとしておくことが望ましい。
以上、本発明の好ましい実施形態を添付図面を参照して説明したが、本発明はかかる実施形態に限定されるものではなく、特許請求の範囲の記載から把握される技術的範囲において種々の形態に変更可能である。
本発明の第一の実施形態を説明する一部を省略した断面図。 本発明の第二の実施形態を説明する一部を省略した断面図。 図１図示の本発明の第一の実施形態の他の例を説明する一部を省略した断面図。 図２図示の本発明の第二の実施形態の他の例を説明する一部を省略した断面図。 （ａ）、（ｂ）、（ｃ）本発明の第三の実施形態を説明する一部を省略した断面図。 （ａ）上側に基板が載置されている状態の本発明の基板支持・搬送用トレイを搬送する状態を説明する平面図、（ｂ）上側に基板が載置されている状態の本発明の基板支持・搬送用トレイを搬送する状態を説明する正面図。 （ａ）、（ｂ）従来の基板支持・搬送用トレイを説明する一部を省略した断面図。

Claims (2)

  1. 基板に対する加熱処理が行われる処理室に配備されている基板支持部材の上に載置され、上側に基板が置かれる基板支持・搬送用のトレイであって、上部側に円盤状の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向かって延びる筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状部とを備えていることを特徴とする基板支持・搬送用トレイ。
  2. 上側に基板が配置される基板支持部の上に配置されて、基板支持部の上側に基板が配置されている空間を密封するキャップであって、下端側に基板支持部の上端外周に掛止される掛止段部を有し、掛止段部におけるキャップの側壁内径（Ｒ２）が、基板支持部の上端の外径（Ｒ３）より少なくともプラス公差分大きくなっているキャップと組み合わされることを特徴とする請求項１記載の基板支持・搬送用トレイ。
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EP1811559A1 (en) 2007-07-25
US20080128969A1 (en) 2008-06-05
US20100084392A1 (en) 2010-04-08
EP1811559A4 (en) 2010-04-21
CN101645394A (zh) 2010-02-10
US8147242B2 (en) 2012-04-03
US7780440B2 (en) 2010-08-24
JP4453984B2 (ja) 2010-04-21

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