TW201725620A - 單晶碳化矽基板之加熱處理容器及蝕刻方法 - Google Patents
單晶碳化矽基板之加熱處理容器及蝕刻方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 117
- 238000010438 heat treatment Methods 0.000 title claims abstract description 83
- 238000005530 etching Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 238000003780 insertion Methods 0.000 claims description 26
- 230000037431 insertion Effects 0.000 claims description 26
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 14
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 14
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000000428 dust Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Abstract
加熱處理容器(1)具備支撐構件(6),該支撐構件(6)係在蝕刻處理對象物即圓板狀之SiC基板(2)時支撐該SiC基板(2)。支撐構件(6)具有用以支撐SiC基板(2)之下面的端緣(2E)之傾斜面(6F),該傾斜面(6F)係以隨著越朝下方而越靠近SiC基板(2)之中心線的方式傾斜。更具體而言,支撐構件(6)係被形成為隨著越朝下方而直徑變得越大之圓錐狀,且其圓周面即圓錐面,係構成上述傾斜面(6F)。此傾斜面(6F)之上下中途部,接觸於SiC基板(2)之下面的端緣(2E)。
Description
本揭示主要關於一種在蝕刻處理單晶碳化矽(SiC)基板時而使用之加熱處理容器。
作為一種在矽(Si)或砷化鎵(GaAs)等現有之半導體材料中不能實現的、可實現高溫、高頻、耐電壓及耐環境性之次世代之功率元件、高頻元件用半導體之材料,對碳化矽(SiC)寄予極大之期望。
專利文獻1揭示一種使用於蝕刻處理此種之圓板狀的SiC基板之情況時的加熱處理容器。於此加熱處理容器中,在圓板狀之單晶SiC基板與加熱處理容器的內底面之間間隔有複數個間隔件,且藉由該間隔件支撐SiC基板。藉由此種之構成,可使SiC基板的主表面之兩面(上面及下面、Si面及C面)充分地露出於加熱處理容器之內部空間,進而藉由在Si的蒸氣壓下進行加熱處理等,對兩主表面進行蝕刻處理。
專利文獻1:日本特開2008-16691號公報
然而,於專利文獻1之構成中,因是在間隔件以不小之面積接觸於SiC基板的一主表面(下面)之狀態下進行蝕刻處理,因而會於SiC基板側殘留痕跡。具體而言,會於SiC基板之一主表面(下面)形成因遮罩效應而產生之相對之突起。此突起在蝕刻處理之後對SiC基板進行的用以使磊晶層(epitaxial layer)生長之處理、或電漿乾式蝕刻處理中,存在有可能引起與承載盤(susceptor)之密接性降低、或引起真空吸盤不良之情形。因此,於專利文獻1之構成中,將與間隔件所接觸之主表面相反之側的主表面(即、上面)作為被處理面(安裝元件等之面)。
然而,在如專利文獻1之構成將與間隔件相反之側的主表面作為被處理面之情況下,存在有灰塵等容易附著於被處理面、且SiC基板之品質變差之類的問題。
本揭示係鑑於以上之情狀而完成者,其潛在之目的,在於消除因支撐SiC基板而形成在SiC基板側之痕跡對SiC基板之品質帶來之影響,並且抑制灰塵等附著於被處理面。
本揭示所欲解決之問題,誠如以上之說明,下面對用以解決此問題之手段及其功效進行說明。
根據本揭示之第1觀點,提供以下之構成之加熱處理容器。亦即,此加熱處理容器具備支撐構件,該支撐構件,係於蝕刻處理對象物即圓板狀之SiC基板時支撐該SiC基板。上述支撐構件具有用以支撐上述SiC基板之下面的端緣之傾斜部,該傾斜部係以隨著越朝下方而越靠近該SiC基板之中心線之方式傾斜。
藉此,支撐構件係在僅與SiC基板之下面的端緣接觸之狀態下支撐該SiC基板,因而,接觸於支撐構件時形成在SiC基板側之痕跡,不會殘留於藉由此後的處理而被丟棄之端緣之區域以外之部分。因此,可以被處理面朝下之方式支撐SiC基板,藉由依此方式構成,可抑制灰塵附著於被處理面。
於上述加熱處理容器中,較佳可為以下之構成。亦即,上述傾斜部係形成為平面狀、圓柱面狀、圓錐面狀、或稜線狀。上述傾斜部之上下中途部,係接觸於上述SiC基板的下面之端緣。
藉此,可藉由支撐構件以穩定之狀態保持對象物即SiC基板。
於上述加熱處理容器中,較佳可為以下之構成。亦即,此加熱處理容器,更具備構成該加熱處理容器之底部之底板。上述支撐構件係能裝卸地安裝於上述底
板。
藉此,例如,於進行朝加熱處理容器內供給Si的處理之期間,藉由自底板拆下支撐構件且取出至加熱處理容器外,可防止支撐構件之表面伴隨Si的供給而發生化學變化進而於蝕刻處理時黏著於SiC基板。藉此,可防止SiC基板破裂。
於上述加熱處理容器中,較佳可為以下之構成。亦即,上述支撐構件係由碳化鉭或碳化鈮構成。露出於上述底板之內底面及上述加熱處理容器的內部空間之表面,係由鉭矽化物構成。
藉此,可防止支撐構件被黏著於SiC基板,並且可將露出於底板之內底面及加熱處理容器之內部空間的表面作為Si供給源,效率良好地於加熱處理容器內形成Si的氣氛,進而對SiC基板進行蝕刻處理。
於上述加熱處理容器中,較佳可為以下之構成。亦即,於上述支撐構件的下端部形成有軸狀之***部或***孔之中的一者。於上述底板形成有與上述軸狀之***部或***孔之中的一者對應之***孔或軸狀之***部。
藉此,只要將軸狀之***部******孔,即可對底板安裝或拆卸支撐構件,從而可使裝卸支撐構件之作業變得簡單。
於上述加熱處理容器中,較佳可為以下之構成。亦即,於上述軸狀之***部形成有陽螺紋。於上述***孔形成有陰螺紋。
藉此,只要使支撐構件旋轉,即可對底板安裝或拆卸支撐構件,從而可使裝卸支撐構件之作業變得簡單。
於上述加熱處理容器中,較佳為,上述支撐構件係經由具有間隙(clearance)之安裝構造被安裝於上述底板。
藉此,即使底板及支撐構件之尺寸因熱膨脹而變化,支撐構件仍可相對於底板移動以吸收此尺寸變化,因此可抑制應力施加於SiC基板,從而可防止SiC基板彎曲或破裂。
於上述加熱處理容器中,較佳為,上述支撐構件係被構成為可藉由上述間隙而使上述傾斜部之斜度變化。
藉此,由於SiC基板接觸於支撐構件的傾斜部時之位置係朝上下方向變化,因此即使底板及支撐構件之尺寸因熱膨脹而變化,SiC基板仍不會彎曲或破裂,從而可藉由支撐構件以穩定之狀態進行支撐。
根據本揭示之第2觀點,提供一種蝕刻方法,其使用上述加熱處理容器,且於將上述SiC基板之被處理面朝向下方之狀態下,藉由上述支撐構件支撐該被處理面之端緣,而對上述SiC基板進行蝕刻處理。
藉此,由於以被處理面朝下之方式支撐SiC基板而進行蝕刻處理,因而能抑制灰塵附著於被處理面。
1‧‧‧加熱處理容器
2‧‧‧SiC基板
2E‧‧‧(SiC基板的)下端之端緣
3‧‧‧底板
3H‧‧‧孔
6‧‧‧支撐構件
6F‧‧‧傾斜面(傾斜部)
6S‧‧‧軸
6T‧‧‧錐面
圖1為本揭示之一實施形態之加熱處理容器之分解立體圖。
圖2為顯示加熱處理容器所具備之底板及支撐構件的構成之立體圖。
圖3為加熱處理容器之側面剖視圖。
圖4為顯示支撐構件之傾斜面的斜度發生變化之狀況之側面剖視圖。
圖5為本揭示之另一實施形態之加熱處理容器之側面剖視圖。
下面,參照圖式對本揭示之實施形態進行說明。圖1為本揭示之一實施形態之加熱處理容器1之分解立體圖。圖2為顯示加熱處理容器1所具備之底板3及支撐構件6的構成之立體圖。圖3為加熱處理容器1之側面剖視圖。圖4為顯示支撐構件6之傾斜面6F的斜度發生變化之狀況之側面剖視圖。
圖1及圖3所示之加熱處理容器1,係於蝕刻處理圓板狀之SiC基板2時用以收容對象物即該SiC基板2者,且外形被形成為大致圓柱形狀。加熱處理容器1,具備圓板狀之底板3、圓筒形狀之本體部4、及蓋5。加熱處理容器1,係被構成為藉由使底板3、本體部4及蓋
5如圖1及圖3所示在上下方向進行重疊,而使內部空間成為準密封狀態。
於此加熱處理容器1之內部收容SiC基板2,且於以Si的蒸氣壓充滿內部之狀態下,於1500℃以上且2200℃以下、較適為1600℃以上且2000℃以下之環境下進行加熱處理(退火處理),藉此,可對SiC基板2之主表面進行蝕刻處理。再者,在此所稱之「主表面」,係指SiC基板2之側面以外之面(平面狀之一對主要的面)。
進行了蝕刻處理後之SiC基板2,之後會被進行用以使磊晶層生長之處理、離子植入處理,且藉由離子植入後之活化而成為主表面具有充分之平坦度及電活性之狀態。並且,將距離圓板狀之SiC基板2之外周數mm左右(例如,於SiC基板2之外徑為100mm時,為3mm左右)的區域作為丟棄區域(edge exclusion),且利用剩餘之部分製造半導體元件。
其次,參照圖1至圖3,對加熱處理容器1之詳細構成進行說明。如上述,加熱處理容器1係外形大致圓柱形狀之容器。若從另外之觀點來看,將底板3、本體部4及蓋5組合而成者,係構成一坩堝。加熱處理容器(坩堝)1,係在載置於省略圖示的具備加熱爐之支撐台等之狀態下,被以上述溫度進行加熱。
於底板3、本體部4、及蓋5之各者中,在露出於加熱處理容器1的內部之表面形成有鉭矽化物層(Ta5Si3)。於鉭矽化物層之外側鄰近形成有碳化鉭層
(TaC及Ta2C)。於隔著碳化鉭層而與鉭矽化物層為相反之側形成有鉭層(Ta)。
如圖1及圖2所示,於底板3的上面(即,加熱處理容器1之內底面)配置有複數個支撐構件6。SiC基板2係經由支撐構件6被支撐於底板3。於本實施形態中,底板3係被形成為較SiC基板2之外徑略大的外徑之圓板形狀。SiC基板2係在俯視時其中心之位置與底板3的中心一致之狀態下,與底板3隔開間隔配置在該底板3的上方。
前述之形成在露出於加熱處理容器1的內部空間之表面之鉭矽化物層,係作為用於以Si的蒸氣壓充滿加熱處理容器1之內部空間之Si供給源發揮作用。此鉭矽化物層,係藉由使已被溶解之Si接觸於露出在加熱處理容器1之底板3、本體部4、及蓋5之內部空間的表面,且於1800℃以上且2000℃以下進行加熱而形成。藉此,可實現由Ta5Si3構成之鉭矽化物層。再者,本實施形態中,雖形成有30μm以上且50μm以下之厚度之鉭矽化物層,但根據內部空間之體積等,例如也可為1μm以上且300μm以下之厚度。
此外,本實施形態中,作為鉭矽化物雖為形成有Ta5Si3之構成,但也可形成以其他之化學式(例如,TaSi2)表示之鉭矽化物。此外,也可重疊形成複數之鉭矽化物。
如圖2所示,於底板3上安裝有複數(本實
施形態中為3個)之支撐構件6。支撐構件6係構成加熱處理容器1之一部分,且於進行蝕刻處理時,用以相對於加熱處理容器1之底板3隔開間隔支撐SiC基板2者。支撐構件6係能裝卸地設置於底板3。
支撐構件6,係於俯視時以底板3的中心作為中心之虛擬圓上以等間隔(本實施形態中各間隔120°)排列配置,以使其可以複數個部位支撐圓板狀之SiC基板2的下面之端緣。各支撐構件6例如被形成為圓錐狀,且具有以隨著越朝下方而越靠近底板3的中心線L(參照圖2)之方式傾斜之傾斜面(傾斜部)6F。換言之,支撐構件6具有以越遠離底板3的中心而變得越高之方式傾斜之傾斜面6F。
在此,如圖3所示,支撐構件6之下端,係被配置於俯視時較SiC基板2之外周靠近中心線L側之位置。因此,支撐構件6可以此傾斜面6F接觸SiC基板2之下面的端緣2E,進而支撐SiC基板2。亦即,支撐構件6,係支撐SiC基板2之下面之端緣2E(側面2S與下面2U之交界部分)。
更具體而言,本實施形態之支撐構件6,具有隨著越朝下方而直徑變得越大之圓錐形狀。此支撐構件6之外周面即圓錐形狀之錐面(圓錐面)6T,係上述傾斜面6F,且利用其上下中途部接觸於SiC基板2之下端之端緣2E,可藉由支撐構件6支撐SiC基板2。藉由設為使支撐構件6成為此種之朝上方突出之圓錐狀,且將SiC基板2
配置於複數之傾斜面6F(錐面6T)的內側之構成,可藉由支撐構件6以穩定之狀態保持對象物即SiC基板2。
如此,於本實施形態之加熱處理容器1中,支撐構件6係於僅接觸於SiC基板2之下面的端緣2E之狀態下支撐SiC基板2,因此,因在與支撐構件6接觸之狀態下進行蝕刻處理而形成於SiC基板2側之痕跡,不會殘留於此SiC基板2之下端之端緣2E附近以外。並且,此痕跡之位置,被包含在製造半導體元件的過程中之SiC基板2之丟棄區域,因此不會對產品之品質造成影響。如此,於本實施形態之構成中,不會如先前那樣會於SiC基板2之下面形成因遮罩效應而產生之大的突起等,因此可以安裝元件等之被處理面朝下的方式(面向下之狀態)支撐SiC基板2。其結果,可抑制灰塵附著於被處理面。
支撐構件6係由碳化鉭(TaC)構成。如此,在露出於加熱處理容器1之內部空間之構件中,僅支撐構件6係由碳化鉭構成,而於其他之構件表面(露出於內部空間之表面)形成有鉭矽化物層。藉由依此方式構成,可確實防止支撐構件6被鉭矽化物化而黏著於SiC基板2之情形發生。此外,可將遍布於露出在加熱處理容器1之內部空間的寬廣面積之鉭矽化物層作為Si供給源,於加熱處理容器1之內部空間形成Si的氣氛,因而能使該內部空間之Si的濃度變得均勻,進而可對SiC基板2之主表面均勻地實施蝕刻處理。
並且,於進行使已溶解之Si接觸於加熱處理
容器1之內部空間的表面而供給Si的處理(蝕刻處理之前處理)之期間,藉由自底板3拆下支撐構件6且朝加熱處理容器1之外部取出,可防止Si附著於支撐構件6之表面而矽化物化。藉此,可於蝕刻處理時確實防止支撐構件6被黏著於SiC基板2,進而可防止SiC基板2發生破裂。
然而,構成支撐構件6之材料,並不限於上述碳化鉭,也可取代此而改由碳化鈮構成。於此情況下,也可防止Si附著於支撐構件6之表面而被矽化物化,從而可防止支撐構件6與SiC基板2之黏著。
其次,參照圖3及圖4,對支撐構件6能相對於底板3進行裝卸之構成詳細地進行說明。於本實施形態中,於支撐構件6之下端部,以朝下方突出之方式設置形成有陽螺紋之軸6S。此外,形成有與上述陽螺紋對應之陰螺紋之孔3H,係沿底板3之上述虛擬圓以等間隔(本實施形態中為3個)排列設置。藉由將支撐構件6的下端部之陽螺紋之軸6S擰入此陰螺紋之孔3H,可將支撐構件6安裝於底板3。此外,藉由朝與上述相反之方向旋動支撐構件6,可自底板3拆下支撐構件6。如此,只要使支撐構件6旋轉,即可相對於底板3安裝或拆卸支撐構件6,因而裝卸作業簡單。
在此,形成於底板3的陰螺紋之孔3H之尺寸,係被設定為相對於陽螺紋之軸6S具有適宜之間隙(游隙)。因此,支撐構件6之下端部之軸6S,係在相
對於底板3具有間隙(游隙)之狀態下被安裝於底板3。
藉由具有此種間隙之螺紋構造(安裝構造),即使SiC基板2、底板3及支撐構件6之尺寸因加熱處理等之熱膨脹而變化,支撐構件6仍可相對於底板3移動而吸收此變化,因此可抑制應力施加於SiC基板2。藉此,可防止伴隨熱膨脹而造成SiC基板2彎曲或破裂。
此外,如圖4所示,支撐構件6係被構成為藉由僅移動相當於陰螺紋之孔3H的相對於軸6S之間隙之移動量,而可整體傾斜,以使傾斜面6F之斜度變化。藉此,即使底板3及支撐構件6之尺寸因熱膨脹而變化,仍可使傾斜面6F之斜度變化,使得SiC基板2不會發生彎曲或破裂。
再者,為了使支撐構件6能相對於底板3進行裝卸,也可取代上述構成,而設為如圖5所示之構成。圖5為本發明之另一實施形態之加熱處理容器之側面剖視圖。
於圖5之構成中,於支撐構件6之下端部形成有陰螺紋之孔6X,且具有與此對應之陽螺紋之軸3Y,係沿底板3之上述虛擬圓以等間隔(本實施形態中為3個)排列設置。如此,也可設為於支撐構件6形成有陰螺紋,且於底板3形成有陽螺紋之構成。
如以上說明,本實施形態之加熱處理容器1,具備支撐構件6,該支撐構件6係於蝕刻處理對象物即圓板狀之SiC基板2時支撐該SiC基板2。支撐構件6具有
用以支撐SiC基板2之下面的端緣2E之傾斜面6F,該傾斜面6F係以隨著越朝下方而越靠近SiC基板2之中心線L的方式傾斜。
藉此,由於支撐構件6係在僅與SiC基板2之下面的端緣2E接觸之狀態下支撐該SiC基板2,因而,接觸於支撐構件6時形成在SiC基板2側之痕跡,不會殘留於藉由此後之處理而被丟棄之端緣之區域(丟棄區域)以外之部分。因此,可以被處理面朝下之方式支撐SiC基板2,藉此,可抑制灰塵附著於被處理面。
此外,於本實施形態之加熱處理容器1中,傾斜面6F係被形成為圓錐面狀(錐面6T)。傾斜面6F之上下中途部,係接觸於上述SiC基板2之下端之端緣2E。
藉此,可藉由支撐構件6以穩定之狀態保持對象物即SiC基板2。
此外,本實施形態之加熱處理容器1,更具備構成加熱處理容器1之底部之底板3。支撐構件6係能裝卸地被安裝於底板3。
藉此,於進行朝加熱處理容器1內供給Si的處理之期間,藉由自底板3拆下支撐構件6且朝加熱處理容器1外取出,可防止支撐構件6之表面被鉭矽化物化(矽化物化)進而於蝕刻處理時黏著於SiC基板2。藉此,可防止SiC基板2破裂。
此外,於上述加熱處理容器1中,支撐構件6
係由碳化鉭或碳化鈮構成。露出於底板3之內底面及加熱處理容器1之內部空間之表面,係由鉭矽化物構成。
藉此,可防止支撐構件6被黏著於SiC基板2,並且可將露出於底板3之內底面及加熱處理容器1的內部空間之表面作為Si供給源,效率良好地於加熱處理容器1內形成Si的氣氛,進而對SiC基板2進行蝕刻處理。
此外,於上述加熱處理容器1中,於支撐構件6之下端部設置有軸狀之***部(軸6S),且於底板3設置有與上述軸6S對應之***孔(孔3H)。此外,於另一實施形態中,於支撐構件6之下端部設置有***孔(孔6X),且於底板3設置有與上述孔6X對應之軸狀之***部(軸3Y)。
藉此,只要將軸6S***孔3H(或將軸3Y***孔6X),即可相對於底板3安裝或拆卸支撐構件6,從而可使裝卸支撐構件6之作業變得簡單。
此外,於上述加熱處理容器1中,於軸6S及軸3Y形成有陽螺紋,且於孔3H及孔6X形成有陰螺紋。
藉此,只要使支撐構件6旋轉,即可相對於底板3安裝或拆卸支撐構件6,從而可使裝卸支撐構件6之作業變得簡單。
此外,於上述加熱處理容器1中,支撐構件6係經由具有間隙(游隙)之螺紋構造被安裝於底板3。
藉此,即使底板3及支撐構件6之尺寸因熱
膨脹而變化,支撐構件6仍可相對於底板3移動以吸收其尺寸變化,因此可抑制應力施加在SiC基板2,從而可防止SiC基板2彎曲或破裂。
此外,於上述加熱處理容器1中,支撐構件6可藉由上述間隙而使傾斜面6F之斜度變化。
藉此,由於SiC基板2接觸於支撐構件6之傾斜面6F時之位置係朝上下方向變化,因此即使底板3及支撐構件6之尺寸因熱膨脹而變化,SiC基板2仍不會彎曲或破裂,從而可藉由支撐構件6以穩定之狀態進行支撐。
此外,本實施形態中,使用上述加熱處理容器1,且於將SiC基板2之被處理面朝向下方之狀態下,藉由支撐構件6支撐該被處理面(下面2U)之端緣2E,而對SiC基板2進行蝕刻處理。
藉此,由於以被處理面朝下的方式(以面向下之狀態)支撐SiC基板2而進行蝕刻處理,因而能抑制灰塵附著於被處理面。
以上說明了本揭示之較佳實施形態,但上述構成例如可以如下之方式進行變更。
於上述實施形態中,支撐構件6係設為圓錐形狀之構件,但支撐構件之形狀不限於此。亦即,支撐構件只要為具有以隨著越朝下方而越靠近SiC基板之中心線的方式傾斜之傾斜部者即可,例如,也可由相對於垂直方向而適宜傾斜之細圓柱狀之鋼絲、或平板狀之構件等構
成。此外,也可由傾斜之圓棒狀之構件構成支撐構件,且以其圓柱面狀之圓周面支撐SiC基板。或者,也可將支撐構件之形狀設為將具有錐面之圓錐形狀的上部及圓柱形狀的下部組合而成之形狀。此外,也可將支撐構件之形狀設為例如如三角錐、六角錐或十二角錐之多角錐。此情況下,也可以多角錐具有之傾斜狀的平面支撐SiC基板,或者也可以傾斜之稜線狀之部分(刀刃狀之部分)支撐SiC基板。
於上述實施形態中,支撐構件6係被設為藉由支撐構件6之下端部的陽螺紋之軸6S、及形成於底板3的陰螺紋之孔3H之間的間隙(游隙)而可略微移動,但間隙之形態不限於此。亦即,例如,也可取代此,而設為由無螺紋之軸狀的***部及***孔構成之可裝卸之安裝構造(暗榫構造),且於軸狀之***部與***孔之間形成間隙。此外,也可設為於底板3設置相對於SiC基板2之中心線L而朝徑向延長之槽,且使支撐構件於該溝內滑動者。或者,也可構成為利用轉動軸或凸輪機構等,而使支撐構件相對於底板移動者。
於上述實施形態中,支撐構件6係於底板3上之俯視時與SiC基板2的外周對應之位置以等間隔設置有3個,但支撐構件6之個數不限於此,例如,也可具備4個以上。此外,支撐構件6也可以不相等之間隔配置。
支撐構件6並不限於呈突出狀設置於底板3之構成,也可為設置於本體部4或蓋5之構成。此外,支
撐構件6也可不能裝卸地被安裝於底板3等。
上述實施形態中,本體部4與底板3係可被分割地構成,但本體部4與底板3也可形成一體。
SiC基板2,也可於安裝元件等之面(被處理面)作為上側之狀態下藉由支撐構件6所支撐。
於上述實施形態中,支撐構件6係藉由螺絲被直接安裝於底板3,但不限於此,例如也可取代此,而於底板3之內底面上配置台座,且隔著該台座將支撐構件間接地安裝於底板。此情況下,也可設為於台座形成有螺孔之構成。
1‧‧‧加熱處理容器
2‧‧‧SiC基板
3‧‧‧底板
4‧‧‧本體部
5‧‧‧蓋
6‧‧‧支撐構件
6T‧‧‧錐面
L‧‧‧中心線
Claims (9)
- 一種加熱處理容器,係具備支撐構件,該支撐構件係於蝕刻處理對象物即圓板狀之SiC基板時支撐該SiC基板,其特徵在於:上述支撐構件具有用以支撐上述SiC基板之下面的端緣之傾斜部,該傾斜部係以隨著越朝下方而越靠近該SiC基板之中心線之方式傾斜。
- 如請求項1之加熱處理容器,其中,上述傾斜部係形成為平面狀、圓柱面狀、圓錐面狀、或稜線狀,且上述傾斜部之上下中途部,係接觸於上述SiC基板的下面之端緣。
- 如請求項1之加熱處理容器,其中,更具備構成上述加熱處理容器之底部之底板,且上述支撐構件係能裝卸地安裝於上述底板上。
- 如請求項3之加熱處理容器,其中,上述支撐構件係由碳化鉭或碳化鈮構成,露出於上述底板之內底面及上述加熱處理容器的內部空間之表面,係由鉭矽化物構成。
- 如請求項3之加熱處理容器,其中,於上述支撐構件的下端部形成有軸狀之***部或***孔之中的一者,於上述底板形成有與上述軸狀之***部或***孔之中的一者對應之***孔或軸狀之***部。
- 如請求項5之加熱處理容器,其中,於上述軸狀之***部形成有陽螺紋,且 於上述***孔形成有陰螺紋。
- 如請求項3至6中任一項之加熱處理容器,其中,上述支撐構件係經由具有間隙之安裝構造被安裝於上述底板。
- 如請求項7之加熱處理容器,其中,上述支撐構件係被構成為可藉由上述間隙而使上述傾斜部之斜度變化。
- 一種蝕刻方法,其特徵在於:使用請求項1之加熱處理容器,且於將上述SiC基板之被處理面朝向下方之狀態下,藉由上述支撐構件支撐該被處理面之端緣,而對上述SiC基板進行蝕刻處理。
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JPS636858A (ja) * | 1986-06-26 | 1988-01-12 | Fujitsu Ltd | 基板搬送機構 |
JPH02139935A (ja) * | 1988-11-21 | 1990-05-29 | Nec Corp | 半導体製造装置 |
JP3715073B2 (ja) * | 1997-04-22 | 2005-11-09 | 大日本スクリーン製造株式会社 | 熱処理装置 |
DE10003639C2 (de) | 2000-01-28 | 2003-06-18 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
JP2006005177A (ja) * | 2004-06-17 | 2006-01-05 | Tokyo Electron Ltd | 熱処理装置 |
JP2006028625A (ja) * | 2004-07-21 | 2006-02-02 | Denso Corp | Cvd装置 |
JP5152887B2 (ja) | 2006-07-07 | 2013-02-27 | 学校法人関西学院 | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP2008198836A (ja) * | 2007-02-14 | 2008-08-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5213095B2 (ja) * | 2007-03-23 | 2013-06-19 | 学校法人関西学院 | 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JPWO2011065122A1 (ja) * | 2009-11-24 | 2013-04-11 | 住友電気工業株式会社 | 半導体基板の製造方法 |
US9371584B2 (en) * | 2011-03-09 | 2016-06-21 | Applied Materials, Inc. | Processing chamber and method for centering a substrate therein |
JP5977986B2 (ja) * | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
ITMI20112273A1 (it) * | 2011-12-15 | 2013-06-16 | St Microelectronics Srl | Metodo per la produzione di una fetta di carburo di silicio e relativa attrezzatura |
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US10665485B2 (en) | 2020-05-26 |
JP6643029B2 (ja) | 2020-02-12 |
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CN108140574A (zh) | 2018-06-08 |
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