JPS5469392A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5469392A JPS5469392A JP13705777A JP13705777A JPS5469392A JP S5469392 A JPS5469392 A JP S5469392A JP 13705777 A JP13705777 A JP 13705777A JP 13705777 A JP13705777 A JP 13705777A JP S5469392 A JPS5469392 A JP S5469392A
- Authority
- JP
- Japan
- Prior art keywords
- inverter
- insulating film
- electrodes
- substrate
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To shorten the rise time of an inverter by using a floating gate MOFET in the load side of the inverter when MOSFET is integrated in a semiconductor chip to constitute an inverter circuit. CONSTITUTION:Thick SiO2 or Si3N4 insulating film 102 is caused to adhere to the circumference part on P-type Si substrate 101, and an inverter driving-side MOSFET consisting of source and drain regions 103 and 104 and gate insulating film 105 is formed on the surface of substrate 101 surrounded by film 102, and electrodes are provided in these regions. After that, when a load-side drain region 104, and electrode 107 is made common. Next, drain region 110 and gate insulating film 112 are provided, and electrodes are fitted to them respectively and are covered with insulating film 14. Thus, the floating gate element is connected to the driving- side element, thereby constituting an inverter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13705777A JPS5469392A (en) | 1977-11-14 | 1977-11-14 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13705777A JPS5469392A (en) | 1977-11-14 | 1977-11-14 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5469392A true JPS5469392A (en) | 1979-06-04 |
Family
ID=15189869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13705777A Pending JPS5469392A (en) | 1977-11-14 | 1977-11-14 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5469392A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005006443A1 (en) * | 2003-07-03 | 2005-01-20 | Polyic Gmbh & Co. Kg | Logic gate with a potential-free gate electrode for organic integrated circuits |
| US7786818B2 (en) | 2004-12-10 | 2010-08-31 | Polyic Gmbh & Co. Kg | Electronic component comprising a modulator |
-
1977
- 1977-11-14 JP JP13705777A patent/JPS5469392A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005006443A1 (en) * | 2003-07-03 | 2005-01-20 | Polyic Gmbh & Co. Kg | Logic gate with a potential-free gate electrode for organic integrated circuits |
| US7786818B2 (en) | 2004-12-10 | 2010-08-31 | Polyic Gmbh & Co. Kg | Electronic component comprising a modulator |
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