JPS5582465A - Semiconductor device and its preparation - Google Patents
Semiconductor device and its preparationInfo
- Publication number
- JPS5582465A JPS5582465A JP15417078A JP15417078A JPS5582465A JP S5582465 A JPS5582465 A JP S5582465A JP 15417078 A JP15417078 A JP 15417078A JP 15417078 A JP15417078 A JP 15417078A JP S5582465 A JPS5582465 A JP S5582465A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- thin
- sio2 film
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 14
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000003292 diminished effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease the gate delay of an E/D inverter, and to integrate this device to a high degree, by mounting not less than two IG-FETs, whose conductivity under a gate differs, onto the same substrate, and by forming a gate insulating film by an oxide film of the substrate while making the thickness of films differ. CONSTITUTION:A thin SiO2 film 12 is made up to an element forming portion of a p-type Si substrate 11 and a thick SiO2 film 13 between elements. Boron is injected to an E-type switch MOST forming portion through the thin SiO2 film 12, the thin SiO2 film 12 of a D-type load MOST forming portion is removed and arsenic is injected. A thin SiO2 film 14 is built up to the D-type element portion by means of dry oxidation treatment. Thin SiO2 films, which thickness differs, are made up because the thickness of the SiO2 film 12 of the E-type element portion is also increased at that time. This device is completed by means of Si gate technique and Al wiring technique. Thus, drain currents are made greater because the gate film of the D-type element portion is thin, and the gate delay of an E/D inverter is diminished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15417078A JPS5582465A (en) | 1978-12-15 | 1978-12-15 | Semiconductor device and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15417078A JPS5582465A (en) | 1978-12-15 | 1978-12-15 | Semiconductor device and its preparation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5582465A true JPS5582465A (en) | 1980-06-21 |
Family
ID=15578355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15417078A Pending JPS5582465A (en) | 1978-12-15 | 1978-12-15 | Semiconductor device and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5582465A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4627153A (en) * | 1981-02-06 | 1986-12-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of producing a semiconductor memory device |
-
1978
- 1978-12-15 JP JP15417078A patent/JPS5582465A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4627153A (en) * | 1981-02-06 | 1986-12-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of producing a semiconductor memory device |
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