JPS567479A - Field-effect type semiconductor device - Google Patents

Field-effect type semiconductor device

Info

Publication number
JPS567479A
JPS567479A JP8149879A JP8149879A JPS567479A JP S567479 A JPS567479 A JP S567479A JP 8149879 A JP8149879 A JP 8149879A JP 8149879 A JP8149879 A JP 8149879A JP S567479 A JPS567479 A JP S567479A
Authority
JP
Japan
Prior art keywords
pattern
electrode
source
region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8149879A
Other languages
Japanese (ja)
Inventor
Takeshi Kuramoto
Hirohito Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8149879A priority Critical patent/JPS567479A/en
Priority to DE19803024296 priority patent/DE3024296A1/en
Publication of JPS567479A publication Critical patent/JPS567479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the number of electrode lead-out terminals and that of DC wirings by providing two gates of different threshold voltages in a semiconductor substrate when an IGFET having dual gates is fabricated, and connecting one of them to a source.
CONSTITUTION: When an IGFET having dual gates, an N+-type source region and a drain regin are provided within a P-type semicnductor substrate 20, and an N- type channel region is formed therebetween. Then, the full surface of the channel region is coated with an SiO2 film 10, and openings are formed in correspondence to respective regions, and a source electrode pattern 21 is formed in the source region, and a drain electrode pattern 24 is formed in the drain region. While gate first and second electrode patterns 22 and 23 are provided in the film 10 on the channel region the threshold voltages of these electrodes at this time are made different from each other, and only the pattern 23 is connected to the pattern 21. By this organization, it suffices to provide only an electrode bonding pad 21a for the patterns 21 and 23, and hence the construction of the device is simplified.
COPYRIGHT: (C)1981,JPO&Japio
JP8149879A 1979-06-29 1979-06-29 Field-effect type semiconductor device Pending JPS567479A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8149879A JPS567479A (en) 1979-06-29 1979-06-29 Field-effect type semiconductor device
DE19803024296 DE3024296A1 (en) 1979-06-29 1980-06-27 Transistor for radio or audio equipment - has second gate electrode connected to source electrode for improved high frequency performance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8149879A JPS567479A (en) 1979-06-29 1979-06-29 Field-effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS567479A true JPS567479A (en) 1981-01-26

Family

ID=13748036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8149879A Pending JPS567479A (en) 1979-06-29 1979-06-29 Field-effect type semiconductor device

Country Status (2)

Country Link
JP (1) JPS567479A (en)
DE (1) DE3024296A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546371A (en) * 1981-09-25 1985-10-08 U.S. Philips Corporation Semiconductor device having an improved dual-gate field effect transistor
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
WO1989004056A1 (en) * 1987-10-26 1989-05-05 North Carolina State University Mosfet in silicon carbide
JPH0258238A (en) * 1988-08-23 1990-02-27 Nec Corp Manufacture of field effect transistor
JPH02137270A (en) * 1988-11-17 1990-05-25 Nec Corp Dual gate mos field effect transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985002061A1 (en) * 1983-10-28 1985-05-09 Hughes Aircraft Company Multi-gate field effect transistor
EP0309748A1 (en) * 1987-09-28 1989-04-05 Siemens Aktiengesellschaft Low feedback MOS triode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54986A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Reducing method of voltage dependancy for fet output capacity

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54986A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Reducing method of voltage dependancy for fet output capacity

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546371A (en) * 1981-09-25 1985-10-08 U.S. Philips Corporation Semiconductor device having an improved dual-gate field effect transistor
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
WO1989004056A1 (en) * 1987-10-26 1989-05-05 North Carolina State University Mosfet in silicon carbide
JPH0258238A (en) * 1988-08-23 1990-02-27 Nec Corp Manufacture of field effect transistor
JPH02137270A (en) * 1988-11-17 1990-05-25 Nec Corp Dual gate mos field effect transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus

Also Published As

Publication number Publication date
DE3024296A1 (en) 1981-01-08

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