JPS52147983A - Insulation gate type semiconductor device - Google Patents

Insulation gate type semiconductor device

Info

Publication number
JPS52147983A
JPS52147983A JP6542276A JP6542276A JPS52147983A JP S52147983 A JPS52147983 A JP S52147983A JP 6542276 A JP6542276 A JP 6542276A JP 6542276 A JP6542276 A JP 6542276A JP S52147983 A JPS52147983 A JP S52147983A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
window
drain
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6542276A
Other languages
Japanese (ja)
Other versions
JPS6158986B2 (en
Inventor
Osamu Kudo
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6542276A priority Critical patent/JPS52147983A/en
Publication of JPS52147983A publication Critical patent/JPS52147983A/en
Publication of JPS6158986B2 publication Critical patent/JPS6158986B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase the voltage resistance between source and drain as well as between drain and gate with a shorter channel length by forming thin the center part of the insulation gate film and forming thick the channel section at the source and drain terminals, with utilization of the phenomenon in which the peripheral area of the window comes up by etching the semiconductor substrate at the window section after formation of the window on the insulation film and then having oxidation.
COPYRIGHT: (C)1977,JPO&Japio
JP6542276A 1976-06-03 1976-06-03 Insulation gate type semiconductor device Granted JPS52147983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6542276A JPS52147983A (en) 1976-06-03 1976-06-03 Insulation gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6542276A JPS52147983A (en) 1976-06-03 1976-06-03 Insulation gate type semiconductor device

Publications (2)

Publication Number Publication Date
JPS52147983A true JPS52147983A (en) 1977-12-08
JPS6158986B2 JPS6158986B2 (en) 1986-12-13

Family

ID=13286601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6542276A Granted JPS52147983A (en) 1976-06-03 1976-06-03 Insulation gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52147983A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142188A (en) * 1977-05-17 1978-12-11 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS56130973A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142188A (en) * 1977-05-17 1978-12-11 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS56130973A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6158986B2 (en) 1986-12-13

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