JPS5656662A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5656662A
JPS5656662A JP13261179A JP13261179A JPS5656662A JP S5656662 A JPS5656662 A JP S5656662A JP 13261179 A JP13261179 A JP 13261179A JP 13261179 A JP13261179 A JP 13261179A JP S5656662 A JPS5656662 A JP S5656662A
Authority
JP
Japan
Prior art keywords
layer
film
type
capacitor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13261179A
Other languages
Japanese (ja)
Inventor
Naosada Tomari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13261179A priority Critical patent/JPS5656662A/en
Publication of JPS5656662A publication Critical patent/JPS5656662A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enlarge the effective area by a method wherein an uneven part is provided on the surface of the semiconductor layer and at least one of a transistor, diode, resistance and capacitor is arranged therein when an IC is composed of these components formed in one semiconductor substrate. CONSTITUTION:An N<+> type buried-in region 2 is formed diffusively on the P type semiconductor substrate 1, while an N type layer 9 is grown epitaxially on the whole surface thereof, and the layer 9 is separated, with the region 2 being contained therein, like and island by a P<+> type diffused region 4. Next, within this layer 9 formed like an island are formed the transistor, diode, resistance, capacitor and other semiconductor elements to compose the IC, the process of which is as follows: when the capacitor is taken as an example, first an uneven part is formed on the surface of the layer 9 by etching, then an N<+> type layer 10 which is positioned there to serve as one polar plate is formed diffusively and the whole surface is covered with an SiO2 film 12. Next, a window is opened between the film 12 and a film 6 which is united with the film 12 and is extended to the other side, a metallic conductor 7 is connected to the layer 10, while the other metallic electrode plate 11 is connected to the film 12.
JP13261179A 1979-10-15 1979-10-15 Semiconductor integrated circuit device Pending JPS5656662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13261179A JPS5656662A (en) 1979-10-15 1979-10-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13261179A JPS5656662A (en) 1979-10-15 1979-10-15 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5656662A true JPS5656662A (en) 1981-05-18

Family

ID=15085369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13261179A Pending JPS5656662A (en) 1979-10-15 1979-10-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5656662A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101015009B1 (en) * 2008-04-18 2011-02-16 주식회사 케이이씨 Capacitor and fabticating method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101015009B1 (en) * 2008-04-18 2011-02-16 주식회사 케이이씨 Capacitor and fabticating method thereof

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