JPH08507575A - 炭化ケイ素層の製造方法とその物品 - Google Patents
炭化ケイ素層の製造方法とその物品Info
- Publication number
- JPH08507575A JPH08507575A JP7506895A JP50689595A JPH08507575A JP H08507575 A JPH08507575 A JP H08507575A JP 7506895 A JP7506895 A JP 7506895A JP 50689595 A JP50689595 A JP 50689595A JP H08507575 A JPH08507575 A JP H08507575A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- hydrogen
- methyltrichlorosilane
- reactor
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000005055 methyl trichlorosilane Substances 0.000 claims abstract description 46
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 43
- 239000001257 hydrogen Substances 0.000 claims abstract description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000012071 phase Substances 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 38
- 239000000203 mixture Substances 0.000 claims abstract description 35
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000009833 condensation Methods 0.000 claims abstract description 17
- 230000005494 condensation Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 12
- 150000001367 organochlorosilanes Chemical class 0.000 claims abstract description 11
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 239000007791 liquid phase Substances 0.000 claims abstract description 7
- 230000005484 gravity Effects 0.000 claims abstract description 5
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 4
- 239000007787 solid Substances 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 13
- 239000005046 Chlorosilane Substances 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 12
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 11
- 239000000835 fiber Substances 0.000 claims description 3
- 239000013013 elastic material Substances 0.000 claims 1
- 239000000047 product Substances 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract 2
- 239000002244 precipitate Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910003822 SiHCl3 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 2
- -1 alkyl chlorosilanes Chemical class 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 210000004177 elastic tissue Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- BHZSLLSDZFAPFH-UHFFFAOYSA-L palladium(2+);difluoride Chemical compound F[Pd]F BHZSLLSDZFAPFH-UHFFFAOYSA-L 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229940035339 tri-chlor Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.原料成分である高純度化したメチルトリクロロシランと水素の気相混合物 を反応器に供給し、加熱した基材の上で分解させて分解生成物を生成する、気相 からの堆積によって炭化ケイ素層を生成する方法であって、次の過程を含んでな る方法: ・メチルトリクロロシランと水素のモル比が1:1〜3の気相混合物を3〜4 g/cm2・hの密度で1200〜1250℃の温度に加熱した基材に供給し、 ・基材を取り出し、 ・気相混合物としての分解生成物を反応器から抜き出し、0〜−120℃の温 度での凝縮によって気相と液相に分離し、 ・液相を重力によって精留に導き、 ・メチルトリクロロシランと他のオルガノクロロシランを分離して反応器にリ サイクルし、 ・塩化水素、メタン、水素を含む気相を−185〜−196℃に冷し、固体の 堆積物として塩化水素とメタンを分離し、 ・水素を圧縮して反応器にリサイクルする。 2.液体のメチルトリクロロシラン、他のオルガノクロロシラン、及びクロロ シランを含む液体相の凝縮を0〜−75℃の温度、及び−75〜−120℃の温 度で段階的に行う請求の範囲第1項に記載の方法。 3.基材が、堆積の前に弾性物質の層で被覆し、その上に100〜500μm の厚さの第1炭化ケイ素層を堆積させた炭化ケイ素と繊維を含む硬質なカーカス を形成したマンドレルであり、次いでマンドレルを除去し、炭化ケイ素堆積プロ セスを繰り返して所望の厚さの層を形成する請求の範囲第1又は2項に記載の方 法。 4.マンドレルが請求の範囲第〜3項に記載のいずれか1項の方法によって得 られた炭化ケイ素を含むマンドレルである請求の範囲第1又は2項に記載の方法 。 5.弾性の炭素質物質と100〜500μmの厚さを有する炭化ケイ素の少な くとも1方の層と、カーカスの上に所望の厚さの第2の炭化ケイ素層を順次に含 む物品であり、請求の範囲第1〜4項に記載のいずれか1項の方法によって得ら れた炭化ケイ素層の堆積により形成された物品。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU93041257/26A RU93041257A (ru) | 1993-08-17 | Способ получения изделий из карбида кремния | |
RU93041257 | 1993-08-17 | ||
RU93041348A RU2087416C1 (ru) | 1993-08-17 | 1993-08-17 | Способ получения слоев карбида кремния |
RU93041348 | 1993-08-17 | ||
PCT/RU1994/000201 WO1995005495A1 (fr) | 1993-08-17 | 1994-08-15 | Procede de production de couches de carbure de silicium et produit associe |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08507575A true JPH08507575A (ja) | 1996-08-13 |
Family
ID=26653756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7506895A Ceased JPH08507575A (ja) | 1993-08-17 | 1994-08-15 | 炭化ケイ素層の製造方法とその物品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5698261A (ja) |
EP (1) | EP0665305A4 (ja) |
JP (1) | JPH08507575A (ja) |
AU (1) | AU7667994A (ja) |
WO (1) | WO1995005495A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129561A (ja) * | 1995-11-06 | 1997-05-16 | Teisan Kk | ガス回収装置 |
US6332925B1 (en) | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
US5952046A (en) * | 1998-01-21 | 1999-09-14 | Advanced Technology Materials, Inc. | Method for liquid delivery chemical vapor deposition of carbide films on substrates |
US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
US9546420B1 (en) * | 2012-10-08 | 2017-01-17 | Sandia Corporation | Methods of depositing an alpha-silicon-carbide-containing film at low temperature |
US10683572B2 (en) | 2018-10-15 | 2020-06-16 | Goodrich Corporation | Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites |
WO2022123078A1 (en) * | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU327779A1 (ru) * | 1959-11-06 | 1973-03-20 | Способ получени кристаллов карбида кремни | |
US3091517A (en) * | 1959-11-25 | 1963-05-28 | Texas Instruments Inc | Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust |
US3293950A (en) * | 1965-01-15 | 1966-12-27 | Dow Corning | Wire drawing die |
GB1257519A (ja) * | 1968-12-05 | 1971-12-22 | ||
US4131697A (en) * | 1973-06-15 | 1978-12-26 | Association Pour La Recherches Et Le Developpement Des Methodes Et Processus Industriels | Method of coating carbon filaments with silicon carbide |
DE3207065C2 (de) * | 1982-02-26 | 1985-08-22 | Gosudarstvennyj naučno-issledovatel'skij i proektnyj institut redkometalličeskoj promyšlennosti GIREDMET, Moskva | Verfahren zur Regenerierung von nichtumgesetzten Chlorsilanen und nichtumgesetztem Wasserstoff bei der Herstellung von polykristallinem Halbleitersilizium |
US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
US5154862A (en) * | 1986-03-07 | 1992-10-13 | Thermo Electron Corporation | Method of forming composite articles from CVD gas streams and solid particles of fibers |
US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
US4980202A (en) * | 1989-07-03 | 1990-12-25 | United Technologies Corporation | CVD SiC matrix composites containing carbon coated fibers |
US4997678A (en) * | 1989-10-23 | 1991-03-05 | Cvd Incorporated | Chemical vapor deposition process to replicate the finish and figure of preshaped structures |
JPH0813713B2 (ja) * | 1990-10-11 | 1996-02-14 | 東芝セラミックス株式会社 | SiC被覆C/C複合材 |
-
1994
- 1994-08-15 EP EP19940927128 patent/EP0665305A4/en not_active Ceased
- 1994-08-15 AU AU76679/94A patent/AU7667994A/en not_active Abandoned
- 1994-08-15 WO PCT/RU1994/000201 patent/WO1995005495A1/ru not_active Application Discontinuation
- 1994-08-15 JP JP7506895A patent/JPH08507575A/ja not_active Ceased
- 1994-08-15 US US08/416,821 patent/US5698261A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0665305A4 (en) | 1996-01-10 |
WO1995005495A1 (fr) | 1995-02-23 |
AU7667994A (en) | 1995-03-14 |
EP0665305A1 (en) | 1995-08-02 |
US5698261A (en) | 1997-12-16 |
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