WO1995005495A1 - Procede de production de couches de carbure de silicium et produit associe - Google Patents
Procede de production de couches de carbure de silicium et produit associe Download PDFInfo
- Publication number
- WO1995005495A1 WO1995005495A1 PCT/RU1994/000201 RU9400201W WO9505495A1 WO 1995005495 A1 WO1995005495 A1 WO 1995005495A1 RU 9400201 W RU9400201 W RU 9400201W WO 9505495 A1 WO9505495 A1 WO 9505495A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- silicon carbide
- reactor
- hydrogen
- products
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 5
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000012071 phase Substances 0.000 claims abstract description 11
- 239000007791 liquid phase Substances 0.000 claims abstract description 8
- 238000009833 condensation Methods 0.000 claims abstract description 6
- 230000005494 condensation Effects 0.000 claims abstract description 6
- 238000000354 decomposition reaction Methods 0.000 claims abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001556 precipitation Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- 239000000047 product Substances 0.000 abstract description 34
- 239000007789 gas Substances 0.000 abstract description 19
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 239000001257 hydrogen Substances 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000002244 precipitate Substances 0.000 abstract description 4
- 239000003575 carbonaceous material Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000005055 methyl trichlorosilane Substances 0.000 abstract 5
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 abstract 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005484 gravity Effects 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 150000001367 organochlorosilanes Chemical class 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 230000007423 decrease Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000005265 energy consumption Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 241001211977 Bida Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000272041 Naja Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 235000013348 organic food Nutrition 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Definitions
- This memory is larger than I mbit.
- the method of learning the carbide layers from the gas by means of a gas phase containing metal and silane is known.
- the deposition process leads to the use of a film at a temperature of -200- ⁇ 500 ° C at a pressure of 10-700 mm ⁇ .st. co
- ⁇ ed ⁇ s ⁇ a ⁇ m s ⁇ s ⁇ ba yavlyae ⁇ sya nev ⁇ zm ⁇ zhn ⁇ s ⁇ ⁇ lucheniya bes ⁇ is ⁇ g ⁇ ⁇ a ⁇ bida ⁇ emniya with ⁇ l ⁇ y ⁇ y s ⁇ u ⁇ u ⁇ y, niz ⁇ aya ⁇ izv ⁇ di ⁇ eln ⁇ s ⁇ ⁇ tsessa ⁇ saddeniya, vys ⁇ ie eye ⁇ g ⁇ za ⁇ a- 0 ⁇ y and zag ⁇ yaznenie ⁇ uzhayuschey s ⁇ edy ts ⁇ du ⁇ ami ⁇ ea ⁇ tsii.
- the method includes a preliminary calculation of the original components - methyl sulphide, the mixture is mixed at a speed of 0.5–1.5 in the case of gas with a quick gas supply of 6-10 liters per hour (discharge rate of 0.13-0.22 g / sr), the output is free (See the article Ivan 0 of the Second World War and others., "Receiving a Political and Commercial Carbide for Thermal Disposal of Methyl Composite", March 18, 18, 2011,
- Izves ⁇ en s ⁇ s ⁇ b ⁇ ducheshzya products from ⁇ a ⁇ bida ⁇ emniya ⁇ u ⁇ em mixing zhid ⁇ i ⁇ s ⁇ edineny ugle ⁇ da (zhid ⁇ ie uglev ⁇ d ⁇ - ⁇ dy) and zhid ⁇ i ⁇ s ⁇ edineny ⁇ eshiya ( ⁇ gan ⁇ l ⁇ silany) and ⁇ sa- zhde ⁇ iya ⁇ a ⁇ bida- ⁇ emniya on ⁇ av ⁇ e of ugle ⁇ dazs ⁇ g ⁇ vesches ⁇ - va ⁇ i ⁇ em ⁇ e ⁇ a ⁇ u ⁇ e above ⁇ 000 ⁇ C.
- the purpose of the invention is also the production of products from the carbide layers on the basic claimed method, which has a non-negligible inconvenience.
- the task posed is solved by the fact that the method of receiving the wardrobes, including the calculation of the load, is provided on the basis of the
- the gas-and-gas mixture is supplied with a density of 3-4 g / cm2. hours with a large volume of methylated silane, equal to I: (1-3), on heated to -200;
- the essence of the method is as follows.
- the original components are methyl silane ( ⁇ ) and 0 water ( ⁇ ⁇ ), which are in accordance with the calculation.
- Test silane ( ⁇ ) cleans the reaction with the middle function, light function and the cessation of discharge from the process.
- the company is cleaning up the method and at the palladium filter.
- the ease of delivery of the UC separates the irradiation of precipitates with small discharges from a short-circuit system and a process unit.
- the following should be maintained: ⁇ 200- ⁇ 500 ° ⁇ . ⁇ a ⁇ aya s ⁇ v ⁇ u ⁇ sh ⁇ s ⁇ ⁇ nzna ⁇ v ⁇ bes ⁇ echivae ⁇ not ⁇ l ⁇ vys ⁇ e ⁇ aches ⁇ v ⁇ ⁇ luchaem ⁇ g ⁇ ⁇ a ⁇ bi- ⁇ emniya yes, n ⁇ and vys ⁇ uyu ts ⁇ izv ⁇ di ⁇ eln ⁇ s ⁇ ⁇ tsessa and s ⁇ - ⁇ s ⁇ ⁇ sazhdeniya (I d ⁇ w / h) and reduction udeln ⁇ g ⁇ ⁇ as ⁇ da ele ⁇ ene ⁇ gii unit g ⁇ v ⁇ y ⁇ du ⁇ tsii.
- the claimed method has a high eco-friendly and inaccessible. This is due to the fact that a suitable vapor phase (ASG) after cooling of the dark carbide is applied to the condensation. Compensation may be necessary at temperatures of -70 - (-75) ° ⁇ .
- ASG vapor phase
- the density of the CSP was lower than that of 5–5 g / cm2. hour, at a temperature of ⁇ 200- ⁇ 250 ° ⁇ .
- the family of the process was divided into the thickest and best-selling layer of the brown meat.
- EXAMPLE 2 The process was also implemented in the same way as in case of I, and the products of diligence were compensated for in the process of being installed; ⁇ dia ⁇ az ⁇ ne ⁇ em ⁇ e ⁇ a ⁇ u ⁇ 0 - (- 75 ° C) ⁇ is ⁇ dila ⁇ ndensatsiya ne ⁇ eagi ⁇ vavsheg ⁇ ⁇ S, ⁇ 'S ⁇ ⁇ Z ⁇ S ⁇ d, dime ⁇ iddi ⁇ l ⁇ silana D ⁇ ' ⁇ D ⁇ S s ⁇ s ⁇ e ⁇ e- New ⁇ ndensatsii 90-95 ?.
- the appliance is used at a temperature of more than 50250 ° C, which leads to an increase in the specific energy consumption of the process and to the absence of water from the cooler, due to this,
- the integral interval for the compensation of the outgoing ASG is 70 ⁇ (--75) ° C, which determines the degree of condensation of the amplifiers and the amplifiers that make up ⁇ 95.
- the fact that they were reportedly intruded at a faster and higher temperature leads to irrevocable losses.
- Cooling the gas phase at a temperature of - 185 - (-196) ° C ensures that the wastewater is supplied with free water and methane is supplied to the consumer. m ⁇ 10 / - o. Correspondingly.
- the product After reaching the required thickness of the carbide, the product is cooled, the internal pressure of the pipe and the removal of the appliance are removed.
- the received pipe does not have internal mechanical stresses.
- the appliance uses a cylinder from carbon dioxide, such as a load, and conducts the process of precipitating the carbide to the ground in the same way as it is in
- the chopper from the obtained carbide of the crushed stone is crushed to a size of 10-100 microns.
- ⁇ ⁇ With more than 3, it leads to an increase in the consumption of water and the resulting product is increased, as well as an increased consumption of water. Reducing the small amount of ⁇ Decision ⁇ ⁇ : ⁇ C less than I leads to a decrease in the extraction of criz ⁇ in the finished product, as well as to an increase in the production of processed products.
- a device with a temperature of less than °200 ° C can result in an infringement of the settling system and the formation of a phase.
- the appliance is suitable for more than 50250 ° ⁇ . It leads to an increase in the specific energy consumption of the process and to the presence of “friends” on the surface of the precipitate, which reduces the quality of the resulting process. _
- the inventive method is environmentally friendly with the specific energy consumption of the reactants for
- Received products are characterized by a significant improvement in comparison with the well-known ones (stoichiometric system, small-sized structure, it is small).
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU76679/94A AU7667994A (en) | 1993-08-17 | 1994-08-15 | Method of producing layers of silicon carbide and an associated product |
US08/416,821 US5698261A (en) | 1993-08-17 | 1994-08-15 | Process for producing silicon carbide layers and an article |
EP19940927128 EP0665305A4 (en) | 1993-08-17 | 1994-08-15 | METHOD FOR PRODUCING LAYERS FROM SI CARBIDE AND PRODUCT PRODUCED THEREOF. |
JP7506895A JPH08507575A (ja) | 1993-08-17 | 1994-08-15 | 炭化ケイ素層の製造方法とその物品 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU93041257/26A RU93041257A (ru) | 1993-08-17 | Способ получения изделий из карбида кремния | |
RU93041257 | 1993-08-17 | ||
RU93041348A RU2087416C1 (ru) | 1993-08-17 | 1993-08-17 | Способ получения слоев карбида кремния |
RU93041348 | 1993-08-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995005495A1 true WO1995005495A1 (fr) | 1995-02-23 |
Family
ID=26653756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/RU1994/000201 WO1995005495A1 (fr) | 1993-08-17 | 1994-08-15 | Procede de production de couches de carbure de silicium et produit associe |
Country Status (5)
Country | Link |
---|---|
US (1) | US5698261A (ru) |
EP (1) | EP0665305A4 (ru) |
JP (1) | JPH08507575A (ru) |
AU (1) | AU7667994A (ru) |
WO (1) | WO1995005495A1 (ru) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129561A (ja) * | 1995-11-06 | 1997-05-16 | Teisan Kk | ガス回収装置 |
US6332925B1 (en) | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
US5952046A (en) * | 1998-01-21 | 1999-09-14 | Advanced Technology Materials, Inc. | Method for liquid delivery chemical vapor deposition of carbide films on substrates |
US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
US9546420B1 (en) * | 2012-10-08 | 2017-01-17 | Sandia Corporation | Methods of depositing an alpha-silicon-carbide-containing film at low temperature |
US10683572B2 (en) | 2018-10-15 | 2020-06-16 | Goodrich Corporation | Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites |
WO2022123078A1 (en) * | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1257519A (ru) * | 1968-12-05 | 1971-12-22 | ||
SU327779A1 (ru) * | 1959-11-06 | 1973-03-20 | Способ получени кристаллов карбида кремни | |
US4980202A (en) * | 1989-07-03 | 1990-12-25 | United Technologies Corporation | CVD SiC matrix composites containing carbon coated fibers |
US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3091517A (en) * | 1959-11-25 | 1963-05-28 | Texas Instruments Inc | Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust |
US3293950A (en) * | 1965-01-15 | 1966-12-27 | Dow Corning | Wire drawing die |
US4131697A (en) * | 1973-06-15 | 1978-12-26 | Association Pour La Recherches Et Le Developpement Des Methodes Et Processus Industriels | Method of coating carbon filaments with silicon carbide |
DE3207065C2 (de) * | 1982-02-26 | 1985-08-22 | Gosudarstvennyj naučno-issledovatel'skij i proektnyj institut redkometalličeskoj promyšlennosti GIREDMET, Moskva | Verfahren zur Regenerierung von nichtumgesetzten Chlorsilanen und nichtumgesetztem Wasserstoff bei der Herstellung von polykristallinem Halbleitersilizium |
US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
US5154862A (en) * | 1986-03-07 | 1992-10-13 | Thermo Electron Corporation | Method of forming composite articles from CVD gas streams and solid particles of fibers |
US4997678A (en) * | 1989-10-23 | 1991-03-05 | Cvd Incorporated | Chemical vapor deposition process to replicate the finish and figure of preshaped structures |
JPH0813713B2 (ja) * | 1990-10-11 | 1996-02-14 | 東芝セラミックス株式会社 | SiC被覆C/C複合材 |
-
1994
- 1994-08-15 EP EP19940927128 patent/EP0665305A4/en not_active Ceased
- 1994-08-15 AU AU76679/94A patent/AU7667994A/en not_active Abandoned
- 1994-08-15 WO PCT/RU1994/000201 patent/WO1995005495A1/ru not_active Application Discontinuation
- 1994-08-15 JP JP7506895A patent/JPH08507575A/ja not_active Ceased
- 1994-08-15 US US08/416,821 patent/US5698261A/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU327779A1 (ru) * | 1959-11-06 | 1973-03-20 | Способ получени кристаллов карбида кремни | |
GB1257519A (ru) * | 1968-12-05 | 1971-12-22 | ||
US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
US4980202A (en) * | 1989-07-03 | 1990-12-25 | United Technologies Corporation | CVD SiC matrix composites containing carbon coated fibers |
Also Published As
Publication number | Publication date |
---|---|
JPH08507575A (ja) | 1996-08-13 |
EP0665305A4 (en) | 1996-01-10 |
AU7667994A (en) | 1995-03-14 |
EP0665305A1 (en) | 1995-08-02 |
US5698261A (en) | 1997-12-16 |
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