JPH0466100B2 - - Google Patents

Info

Publication number: JPH0466100B2
Authority: JP; Japan
Prior art keywords: region; polycrystalline silicon; film; forming; selectively
Prior art date: 1984-11-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP59236208A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61114575A (ja

Inventor

Junzo Shimizu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-09

Filing date

1984-11-09

Publication date

1992-10-22

1984-11-09 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1984-11-09 Priority to JP23620884A priority Critical patent/JPS61114575A/ja

1986-06-02 Publication of JPS61114575A publication Critical patent/JPS61114575A/ja

1992-10-22 Publication of JPH0466100B2 publication Critical patent/JPH0466100B2/ja

Status Granted legal-status Critical Current

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 56
239000010410 layer Substances 0.000 claims description 31
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
229910052814 silicon oxide Inorganic materials 0.000 claims description 29
229910052581 Si3N4 Inorganic materials 0.000 claims description 24
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
238000005530 etching Methods 0.000 claims description 19
239000004065 semiconductor Substances 0.000 claims description 18
238000000034 method Methods 0.000 claims description 14
230000003647 oxidation Effects 0.000 claims description 14
238000007254 oxidation reaction Methods 0.000 claims description 14
238000004519 manufacturing process Methods 0.000 claims description 11
239000000758 substrate Substances 0.000 claims description 11
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
239000012535 impurity Substances 0.000 claims description 5
238000002844 melting Methods 0.000 claims description 3
230000008018 melting Effects 0.000 claims description 3
229910052751 metal Inorganic materials 0.000 claims description 3
239000002184 metal Substances 0.000 claims description 3
239000002344 surface layer Substances 0.000 claims description 2
238000000926 separation method Methods 0.000 description 7
229910052796 boron Inorganic materials 0.000 description 6
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
230000001590 oxidative effect Effects 0.000 description 4
229920002120 photoresistant polymer Polymers 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000000605 extraction Methods 0.000 description 2
238000003754 machining Methods 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
-1 boron ions Chemical class 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
239000005360 phosphosilicate glass Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Bipolar Transistors (AREA)

JP23620884A 1984-11-09 1984-11-09 半導体装置の製造方法 Granted JPS61114575A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP23620884A JPS61114575A (ja)	1984-11-09	1984-11-09	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP23620884A JPS61114575A (ja)	1984-11-09	1984-11-09	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS61114575A JPS61114575A (ja)	1986-06-02
JPH0466100B2 true JPH0466100B2 (zh)	1992-10-22

Family

ID=16997376

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP23620884A Granted JPS61114575A (ja)	1984-11-09	1984-11-09	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS61114575A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0616512B2 (ja) *	1986-11-07	1994-03-02	三菱電機株式会社	半導体集積回路装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54155778A (en) *	1978-05-30	1979-12-08	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device and its manufacture
JPS5694770A (en) *	1979-12-28	1981-07-31	Nec Corp	Transistor

1984
- 1984-11-09 JP JP23620884A patent/JPS61114575A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54155778A (en) *	1978-05-30	1979-12-08	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device and its manufacture
JPS5694770A (en) *	1979-12-28	1981-07-31	Nec Corp	Transistor

Also Published As

Publication number	Publication date
JPS61114575A (ja)	1986-06-02

Publication	Publication Date	Title
EP0170250A2 (en)	1986-02-05	Bipolar transistor and method for producing the bipolar transistor
JPH0628266B2 (ja)	1994-04-13	半導体装置の製造方法
US4408387A (en)	1983-10-11	Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
JP2762851B2 (ja)	1998-06-04	半導体装置の製造方法
JPH0466100B2 (zh)	1992-10-22
JPH0243336B2 (zh)	1990-09-28
JPS60241261A (ja)	1985-11-30	半導体装置およびその製造方法
JPH06291178A (ja)	1994-10-18	半導体装置の製造方法
US4677456A (en)	1987-06-30	Semiconductor structure and manufacturing method
JP3190144B2 (ja)	2001-07-23	半導体集積回路の製造方法
JPH0126184B2 (zh)	1989-05-22
JP2707646B2 (ja)	1998-02-04	半導体装置の製造方法
JPH0523495B2 (zh)	1993-04-02
JPS6122866B2 (zh)	1986-06-03
JP2626300B2 (ja)	1997-07-02	半導体装置の製造方法
JP2630275B2 (ja)	1997-07-16	半導体装置の製造方法
JP2836393B2 (ja)	1998-12-14	半導体装置およびその製造方法
JPS61283167A (ja)	1986-12-13	半導体装置の製造方法
JP2745946B2 (ja)	1998-04-28	半導体集積回路の製造方法
JP2718101B2 (ja)	1998-02-25	半導体装置の製造方法
JP2556155B2 (ja)	1996-11-20	半導体装置の製造方法
JPS6295871A (ja)	1987-05-02	半導体装置の製造方法
JPH0682675B2 (ja)	1994-10-19	半導体装置の製造方法
JPH0154864B2 (zh)	1989-11-21
JPS60165757A (ja)	1985-08-28	半導体装置の製造方法