JPH0126184B2 - - Google Patents

Info

Publication number: JPH0126184B2
Authority: JP; Japan
Prior art keywords: region; semiconductor layer; forming; base; oxidation
Prior art date: 1981-05-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP56071653A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5866358A (ja

Inventor

Junzo Shimizu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-05-12

Filing date

1981-05-12

Publication date

1989-05-22

1981-05-12 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1981-05-12 Priority to JP7165381A priority Critical patent/JPS5866358A/ja

1983-04-20 Publication of JPS5866358A publication Critical patent/JPS5866358A/ja

1989-05-22 Publication of JPH0126184B2 publication Critical patent/JPH0126184B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 23
230000003647 oxidation Effects 0.000 claims description 15
238000007254 oxidation reaction Methods 0.000 claims description 15
238000000034 method Methods 0.000 claims description 14
239000012535 impurity Substances 0.000 claims description 12
238000004519 manufacturing process Methods 0.000 claims description 7
239000000758 substrate Substances 0.000 claims description 4
238000010438 heat treatment Methods 0.000 claims description 2
230000001590 oxidative effect Effects 0.000 claims 2
238000005530 etching Methods 0.000 claims 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
229910052581 Si3N4 Inorganic materials 0.000 description 6
229910052796 boron Inorganic materials 0.000 description 6
238000000605 extraction Methods 0.000 description 6
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
229920002120 photoresistant polymer Polymers 0.000 description 5
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
238000009792 diffusion process Methods 0.000 description 3
238000000206 photolithography Methods 0.000 description 3
-1 boron ions Chemical class 0.000 description 2
238000000059 patterning Methods 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000009434 installation Methods 0.000 description 1
238000002955 isolation Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
238000001259 photo etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Electrodes Of Semiconductors (AREA)
Bipolar Transistors (AREA)

JP7165381A 1981-05-12 1981-05-12 半導体装置の製法 Granted JPS5866358A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP7165381A JPS5866358A (ja)	1981-05-12	1981-05-12	半導体装置の製法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP7165381A JPS5866358A (ja)	1981-05-12	1981-05-12	半導体装置の製法

Publications (2)

Publication Number	Publication Date
JPS5866358A JPS5866358A (ja)	1983-04-20
JPH0126184B2 true JPH0126184B2 (zh)	1989-05-22

Family

ID=13466776

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP7165381A Granted JPS5866358A (ja)	1981-05-12	1981-05-12	半導体装置の製法

Country Status (1)

Country	Link
JP (1)	JPS5866358A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5975661A (ja) *	1982-10-22	1984-04-28	Fujitsu Ltd	半導体装置及びその製造方法
JPS60139U (ja) *	1983-05-02	1985-01-05	凸版印刷株式会社	ラベル
JPS6038873A (ja) *	1983-08-11	1985-02-28	Rohm Co Ltd	半導体装置の製造方法
NL9100062A (nl) *	1991-01-14	1992-08-03	Philips Nv	Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5322035A (en) *	1976-08-06	1978-03-01	Kubota Ltd	Onion harvester
JPS54155778A (en) *	1978-05-30	1979-12-08	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device and its manufacture
JPS56129371A (en) *	1980-03-12	1981-10-09	Mitsubishi Electric Corp	Manufacture of semiconductor ic device
JPS56157043A (en) *	1980-05-06	1981-12-04	Nippon Telegr & Teleph Corp <Ntt>	Manufacture of semiconductor device

1981
- 1981-05-12 JP JP7165381A patent/JPS5866358A/ja active Granted

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5322035A (en) *	1976-08-06	1978-03-01	Kubota Ltd	Onion harvester
JPS54155778A (en) *	1978-05-30	1979-12-08	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device and its manufacture
JPS56129371A (en) *	1980-03-12	1981-10-09	Mitsubishi Electric Corp	Manufacture of semiconductor ic device
JPS56157043A (en) *	1980-05-06	1981-12-04	Nippon Telegr & Teleph Corp <Ntt>	Manufacture of semiconductor device

Also Published As

Publication number	Publication date
JPS5866358A (ja)	1983-04-20

Publication	Publication Date	Title
US4545114A (en)	1985-10-08	Method of producing semiconductor device
JPH059939B2 (zh)	1993-02-08
JPH06318634A (ja)	1994-11-15	半導体装置の素子分離方法
JPH0126184B2 (zh)	1989-05-22
JP3923620B2 (ja)	2007-06-06	半導体基板の製造方法
JPS647509B2 (zh)	1989-02-09
JPS6150398B2 (zh)	1986-11-04
JPH0366815B2 (zh)	1991-10-18
JP3013385B2 (ja)	2000-02-28	半導体装置の製造方法
JPH0130310B2 (zh)	1989-06-19
JPS6252966A (ja)	1987-03-07	半導体装置の製造方法
JPH0475346A (ja)	1992-03-10	半導体装置の製造方法
JPH0456457B2 (zh)	1992-09-08
JPH0136709B2 (zh)	1989-08-02
JPS63114261A (ja)	1988-05-19	トランジスタ用の自己整合型ベース分路
JPS6214466A (ja)	1987-01-23	半導体装置の製造方法
JPH01181465A (ja)	1989-07-19	超高速半導体装置の製造方法
JPH05211153A (ja)	1993-08-20	半導体装置の製造方法
JPH01136367A (ja)	1989-05-29	半導体装置の製造方法
JPH0466100B2 (zh)	1992-10-22
JPS6318331B2 (zh)	1988-04-18
JPS6161546B2 (zh)	1986-12-26
JPS5831524A (ja)	1983-02-24	半導体装置の製造方法
JPS6386476A (ja)	1988-04-16	半導体集積回路装置の製造方法
JPH08250445A (ja)	1996-09-27	半導体装置の製造方法