JPS54155778A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS54155778A
JPS54155778A JP6385978A JP6385978A JPS54155778A JP S54155778 A JPS54155778 A JP S54155778A JP 6385978 A JP6385978 A JP 6385978A JP 6385978 A JP6385978 A JP 6385978A JP S54155778 A JPS54155778 A JP S54155778A
Authority
JP
Japan
Prior art keywords
film
layer
sio
window
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6385978A
Other languages
Japanese (ja)
Other versions
JPS5732511B2 (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Takahiro Makino
Masaru Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6385978A priority Critical patent/JPS54155778A/en
Publication of JPS54155778A publication Critical patent/JPS54155778A/en
Publication of JPS5732511B2 publication Critical patent/JPS5732511B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To stabilize PN junction by providing an insulating film of SiO2 with no additive to the surface of the emitter-base junction constituting a bipolar IC.
CONSTITUTION: Onto N-type Si substrate 21, SiO2 film 22 and Si3N4 film 23 are both stacked by bonding, 1st-layer P=type poly-crystal Si layer 24 is grown, and window 25 is made. Next, films 23 and 22 are etched to form a side-etching region on film 22 and while a difference in level is generated in window 25, SiO2 film 26 and Si3N4 film 27 are bonded. Then, surface film 27, and films 27 and 26 in window 25 are removed and on substrate 21 exposed in window 25, SiO2 film 9 for PN-junction stabilization with both edges removed is formed. On the entire surface, 2nd-layer P-type poly-crystal Si layer 30 is grown and then connected to 1st-layer poly-crystal layer 24 at the edge of film 9 and layer 30 grown on films 26 and 29 is removed. Then, impurities in layer 30 are used to form P-type base region 33 and useless film 9 is removed and N-type emitter region 34 is provided into region 33.
COPYRIGHT: (C)1979,JPO&Japio
JP6385978A 1978-05-30 1978-05-30 Semiconductor device and its manufacture Granted JPS54155778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6385978A JPS54155778A (en) 1978-05-30 1978-05-30 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6385978A JPS54155778A (en) 1978-05-30 1978-05-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54155778A true JPS54155778A (en) 1979-12-08
JPS5732511B2 JPS5732511B2 (en) 1982-07-12

Family

ID=13241473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6385978A Granted JPS54155778A (en) 1978-05-30 1978-05-30 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54155778A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669859A (en) * 1979-11-09 1981-06-11 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS5683063A (en) * 1979-12-12 1981-07-07 Hitachi Ltd Manufacture of semiconductor device
JPS5866358A (en) * 1981-05-12 1983-04-20 Nec Corp Semiconductor device and manufacture thereof
JPS5928371A (en) * 1982-08-09 1984-02-15 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5961180A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5961181A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS59193059A (en) * 1983-03-28 1984-11-01 Hitachi Ltd Manufacture of semiconductor device
JPS61114575A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
DE3940394A1 (en) * 1988-12-06 1990-06-07 Toshiba Kawasaki Kk Semiconductor device esp. bipolar transistor mfr. - using deposited protective insulation film as etch mask

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669859A (en) * 1979-11-09 1981-06-11 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6142871B2 (en) * 1979-11-09 1986-09-24 Oki Electric Ind Co Ltd
JPS6028146B2 (en) * 1979-12-12 1985-07-03 株式会社日立製作所 Manufacturing method of semiconductor device
JPS5683063A (en) * 1979-12-12 1981-07-07 Hitachi Ltd Manufacture of semiconductor device
JPS5866358A (en) * 1981-05-12 1983-04-20 Nec Corp Semiconductor device and manufacture thereof
JPH0126184B2 (en) * 1981-05-12 1989-05-22 Nippon Electric Co
JPS5928371A (en) * 1982-08-09 1984-02-15 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0313745B2 (en) * 1982-09-30 1991-02-25 Fujitsu Ltd
JPS5961181A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5961180A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0429224B2 (en) * 1982-09-30 1992-05-18
JPS59193059A (en) * 1983-03-28 1984-11-01 Hitachi Ltd Manufacture of semiconductor device
JPH0348652B2 (en) * 1983-03-28 1991-07-25 Hitachi Seisakusho Kk
JPS61114575A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
JPH0466100B2 (en) * 1984-11-09 1992-10-22 Nippon Electric Co
DE3940394A1 (en) * 1988-12-06 1990-06-07 Toshiba Kawasaki Kk Semiconductor device esp. bipolar transistor mfr. - using deposited protective insulation film as etch mask
DE3940394C2 (en) * 1988-12-06 1997-08-28 Toshiba Kawasaki Kk Method of manufacturing a bipolar transistor

Also Published As

Publication number Publication date
JPS5732511B2 (en) 1982-07-12

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