JPS54155778A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54155778A JPS54155778A JP6385978A JP6385978A JPS54155778A JP S54155778 A JPS54155778 A JP S54155778A JP 6385978 A JP6385978 A JP 6385978A JP 6385978 A JP6385978 A JP 6385978A JP S54155778 A JPS54155778 A JP S54155778A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sio
- window
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To stabilize PN junction by providing an insulating film of SiO2 with no additive to the surface of the emitter-base junction constituting a bipolar IC.
CONSTITUTION: Onto N-type Si substrate 21, SiO2 film 22 and Si3N4 film 23 are both stacked by bonding, 1st-layer P=type poly-crystal Si layer 24 is grown, and window 25 is made. Next, films 23 and 22 are etched to form a side-etching region on film 22 and while a difference in level is generated in window 25, SiO2 film 26 and Si3N4 film 27 are bonded. Then, surface film 27, and films 27 and 26 in window 25 are removed and on substrate 21 exposed in window 25, SiO2 film 9 for PN-junction stabilization with both edges removed is formed. On the entire surface, 2nd-layer P-type poly-crystal Si layer 30 is grown and then connected to 1st-layer poly-crystal layer 24 at the edge of film 9 and layer 30 grown on films 26 and 29 is removed. Then, impurities in layer 30 are used to form P-type base region 33 and useless film 9 is removed and N-type emitter region 34 is provided into region 33.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6385978A JPS54155778A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6385978A JPS54155778A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54155778A true JPS54155778A (en) | 1979-12-08 |
JPS5732511B2 JPS5732511B2 (en) | 1982-07-12 |
Family
ID=13241473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6385978A Granted JPS54155778A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54155778A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5669859A (en) * | 1979-11-09 | 1981-06-11 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5683063A (en) * | 1979-12-12 | 1981-07-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5866358A (en) * | 1981-05-12 | 1983-04-20 | Nec Corp | Semiconductor device and manufacture thereof |
JPS5928371A (en) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS5961180A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5961181A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59193059A (en) * | 1983-03-28 | 1984-11-01 | Hitachi Ltd | Manufacture of semiconductor device |
JPS61114575A (en) * | 1984-11-09 | 1986-06-02 | Nec Corp | Manufacture of semiconductor device |
DE3940394A1 (en) * | 1988-12-06 | 1990-06-07 | Toshiba Kawasaki Kk | Semiconductor device esp. bipolar transistor mfr. - using deposited protective insulation film as etch mask |
-
1978
- 1978-05-30 JP JP6385978A patent/JPS54155778A/en active Granted
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5669859A (en) * | 1979-11-09 | 1981-06-11 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6142871B2 (en) * | 1979-11-09 | 1986-09-24 | Oki Electric Ind Co Ltd | |
JPS6028146B2 (en) * | 1979-12-12 | 1985-07-03 | 株式会社日立製作所 | Manufacturing method of semiconductor device |
JPS5683063A (en) * | 1979-12-12 | 1981-07-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5866358A (en) * | 1981-05-12 | 1983-04-20 | Nec Corp | Semiconductor device and manufacture thereof |
JPH0126184B2 (en) * | 1981-05-12 | 1989-05-22 | Nippon Electric Co | |
JPS5928371A (en) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPH0313745B2 (en) * | 1982-09-30 | 1991-02-25 | Fujitsu Ltd | |
JPS5961181A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5961180A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0429224B2 (en) * | 1982-09-30 | 1992-05-18 | ||
JPS59193059A (en) * | 1983-03-28 | 1984-11-01 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0348652B2 (en) * | 1983-03-28 | 1991-07-25 | Hitachi Seisakusho Kk | |
JPS61114575A (en) * | 1984-11-09 | 1986-06-02 | Nec Corp | Manufacture of semiconductor device |
JPH0466100B2 (en) * | 1984-11-09 | 1992-10-22 | Nippon Electric Co | |
DE3940394A1 (en) * | 1988-12-06 | 1990-06-07 | Toshiba Kawasaki Kk | Semiconductor device esp. bipolar transistor mfr. - using deposited protective insulation film as etch mask |
DE3940394C2 (en) * | 1988-12-06 | 1997-08-28 | Toshiba Kawasaki Kk | Method of manufacturing a bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5732511B2 (en) | 1982-07-12 |
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