JP7140686B2 - 誘電フィルム形成用組成物 - Google Patents
誘電フィルム形成用組成物 Download PDFInfo
- Publication number
- JP7140686B2 JP7140686B2 JP2018559767A JP2018559767A JP7140686B2 JP 7140686 B2 JP7140686 B2 JP 7140686B2 JP 2018559767 A JP2018559767 A JP 2018559767A JP 2018559767 A JP2018559767 A JP 2018559767A JP 7140686 B2 JP7140686 B2 JP 7140686B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- acrylate
- meth
- composition
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 167
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 143
- 238000000034 method Methods 0.000 claims description 143
- 239000010410 layer Substances 0.000 claims description 120
- 229910052751 metal Inorganic materials 0.000 claims description 96
- 239000002184 metal Substances 0.000 claims description 96
- 229920000642 polymer Polymers 0.000 claims description 63
- 230000008569 process Effects 0.000 claims description 62
- -1 carboxyethyl Chemical group 0.000 claims description 61
- 239000010949 copper Substances 0.000 claims description 57
- 229910052802 copper Inorganic materials 0.000 claims description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 56
- 239000004642 Polyimide Substances 0.000 claims description 48
- 229920001721 polyimide Polymers 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000608 laser ablation Methods 0.000 claims description 31
- 239000003054 catalyst Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 230000005855 radiation Effects 0.000 claims description 26
- 239000000945 filler Substances 0.000 claims description 25
- 239000010936 titanium Substances 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 22
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000004971 Cross linker Substances 0.000 claims description 12
- 239000003431 cross linking reagent Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000003999 initiator Substances 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 8
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 7
- 125000000304 alkynyl group Chemical group 0.000 claims description 7
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- YEURYMNEOXJUSP-UHFFFAOYSA-N C(CCC)O[Hf](OCCCC)OCCCC Chemical compound C(CCC)O[Hf](OCCCC)OCCCC YEURYMNEOXJUSP-UHFFFAOYSA-N 0.000 claims description 6
- KFDGIFZCOIOUIL-UHFFFAOYSA-N CCCCO[Zr](OCCCC)OCCCC Chemical compound CCCCO[Zr](OCCCC)OCCCC KFDGIFZCOIOUIL-UHFFFAOYSA-N 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- LRAMLJMXTWTRIX-UHFFFAOYSA-N [Hf++].CCCC[O-].CCCC[O-] Chemical compound [Hf++].CCCC[O-].CCCC[O-] LRAMLJMXTWTRIX-UHFFFAOYSA-N 0.000 claims description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- CKEGKURXFKLBDX-UHFFFAOYSA-N butan-1-ol;hafnium Chemical compound [Hf].CCCCO.CCCCO.CCCCO.CCCCO CKEGKURXFKLBDX-UHFFFAOYSA-N 0.000 claims description 6
- MTKOCRSQUPLVTD-UHFFFAOYSA-N butan-1-olate;titanium(2+) Chemical compound CCCCO[Ti]OCCCC MTKOCRSQUPLVTD-UHFFFAOYSA-N 0.000 claims description 6
- NUFATYMMMZQQCQ-UHFFFAOYSA-N butan-1-olate;titanium(3+) Chemical compound [Ti+3].CCCC[O-].CCCC[O-].CCCC[O-] NUFATYMMMZQQCQ-UHFFFAOYSA-N 0.000 claims description 6
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims description 6
- NIOLTQNBOYMEQK-UHFFFAOYSA-N butan-1-olate;zirconium(2+) Chemical compound [Zr+2].CCCC[O-].CCCC[O-] NIOLTQNBOYMEQK-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 239000010954 inorganic particle Substances 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 3
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 3
- GROMGGTZECPEKN-UHFFFAOYSA-N sodium metatitanate Chemical compound [Na+].[Na+].[O-][Ti](=O)O[Ti](=O)O[Ti]([O-])=O GROMGGTZECPEKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 28
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 22
- 239000002318 adhesion promoter Substances 0.000 description 20
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 18
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 17
- 238000006116 polymerization reaction Methods 0.000 description 16
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 15
- 238000004132 cross linking Methods 0.000 description 15
- 238000010899 nucleation Methods 0.000 description 15
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 14
- 239000007787 solid Substances 0.000 description 13
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 12
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 229920005575 poly(amic acid) Polymers 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000002679 ablation Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004014 plasticizer Substances 0.000 description 6
- CGSKOGYKWHUSLC-UHFFFAOYSA-N 1-(4-aminophenyl)-1,3,3-trimethyl-2h-inden-5-amine Chemical compound C12=CC=C(N)C=C2C(C)(C)CC1(C)C1=CC=C(N)C=C1 CGSKOGYKWHUSLC-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 229920006378 biaxially oriented polypropylene Polymers 0.000 description 4
- 239000011127 biaxially oriented polypropylene Substances 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229940116333 ethyl lactate Drugs 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 3
- KHFCQXUMTHBEGQ-UHFFFAOYSA-J 5-hydroxy-2-methylidene-5-oxopentanoate titanium(4+) Chemical compound [Ti+4].OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O KHFCQXUMTHBEGQ-UHFFFAOYSA-J 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000003880 polar aprotic solvent Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 2
- HWWYDZCSSYKIAD-UHFFFAOYSA-N 3,5-dimethylpyridine Chemical compound CC1=CN=CC(C)=C1 HWWYDZCSSYKIAD-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- FWBHETKCLVMNFS-UHFFFAOYSA-N 4',6-Diamino-2-phenylindol Chemical compound C1=CC(C(=N)N)=CC=C1C1=CC2=CC=C(C(N)=N)C=C2N1 FWBHETKCLVMNFS-UHFFFAOYSA-N 0.000 description 2
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 2
- HKMTVMBEALTRRR-UHFFFAOYSA-N Benzo[a]fluorene Chemical compound C1=CC=CC2=C3CC4=CC=CC=C4C3=CC=C21 HKMTVMBEALTRRR-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- KLDXJTOLSGUMSJ-JGWLITMVSA-N Isosorbide Chemical compound O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 KLDXJTOLSGUMSJ-JGWLITMVSA-N 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- SEEVRZDUPHZSOX-WPWMEQJKSA-N [(e)-1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethylideneamino] acetate Chemical compound C=1C=C2N(CC)C3=CC=C(C(\C)=N\OC(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C SEEVRZDUPHZSOX-WPWMEQJKSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- IZGZHGAANAVEBU-UHFFFAOYSA-N (1,3-dioxobenzo[de]isoquinolin-2-yl) benzenesulfonate Chemical compound O=C1C(C=23)=CC=CC3=CC=CC=2C(=O)N1OS(=O)(=O)C1=CC=CC=C1 IZGZHGAANAVEBU-UHFFFAOYSA-N 0.000 description 1
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- MCUMKZQJKPLVBJ-UHFFFAOYSA-N (2,4-dinitrophenyl)methyl 4-(trifluoromethyl)benzenesulfonate Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC=C1COS(=O)(=O)C1=CC=C(C(F)(F)F)C=C1 MCUMKZQJKPLVBJ-UHFFFAOYSA-N 0.000 description 1
- MCJPJAJHPRCILL-UHFFFAOYSA-N (2,6-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O MCJPJAJHPRCILL-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical class C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MEJYDZQQVZJMPP-ULAWRXDQSA-N (3s,3ar,6r,6ar)-3,6-dimethoxy-2,3,3a,5,6,6a-hexahydrofuro[3,2-b]furan Chemical compound CO[C@H]1CO[C@@H]2[C@H](OC)CO[C@@H]21 MEJYDZQQVZJMPP-ULAWRXDQSA-N 0.000 description 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- DGVSYJXJJQOOTG-UHFFFAOYSA-N 1-(3,4-dicarboxyphenyl)-1,3,3-trimethyl-2h-indene-5,6-dicarboxylic acid Chemical compound C12=CC(C(O)=O)=C(C(O)=O)C=C2C(C)(C)CC1(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 DGVSYJXJJQOOTG-UHFFFAOYSA-N 0.000 description 1
- OJGWYOJJYMAKRJ-UHFFFAOYSA-N 1-(3,4-dicarboxyphenyl)-3-methyl-2,3-dihydro-1h-indene-5,6-dicarboxylic acid Chemical compound C12=CC(C(O)=O)=C(C(O)=O)C=C2C(C)CC1C1=CC=C(C(O)=O)C(C(O)=O)=C1 OJGWYOJJYMAKRJ-UHFFFAOYSA-N 0.000 description 1
- GLQZKLVNEGUZHG-UHFFFAOYSA-N 1-(3-amino-4-methylphenyl)-1,3,3,6-tetramethyl-2h-inden-4-amine Chemical compound NC1=CC(C)=CC2=C1C(C)(C)CC2(C)C1=CC=C(C)C(N)=C1 GLQZKLVNEGUZHG-UHFFFAOYSA-N 0.000 description 1
- MHOJULUYHDJEOA-UHFFFAOYSA-N 1-(3-amino-4-methylphenyl)-1,3,3,6-tetramethyl-2h-inden-5-amine Chemical compound C1=C(N)C(C)=CC=C1C1(C)C2=CC(C)=C(N)C=C2C(C)(C)C1 MHOJULUYHDJEOA-UHFFFAOYSA-N 0.000 description 1
- UUWJBXKHMMQDED-UHFFFAOYSA-N 1-(3-chlorophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(Cl)=C1 UUWJBXKHMMQDED-UHFFFAOYSA-N 0.000 description 1
- QCZZSANNLWPGEA-UHFFFAOYSA-N 1-(4-phenylphenyl)ethanone Chemical group C1=CC(C(=O)C)=CC=C1C1=CC=CC=C1 QCZZSANNLWPGEA-UHFFFAOYSA-N 0.000 description 1
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 1
- VWJFWYXFPOARLW-UHFFFAOYSA-N 1-cyclohexyl-2-diazonio-2-(4-methylphenyl)sulfonylethenolate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C([N+]#N)=C([O-])C1CCCCC1 VWJFWYXFPOARLW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-N 1-methyl-2h-tetrazole-5-thione Chemical compound CN1N=NN=C1S XOHZHMUQBFJTNH-UHFFFAOYSA-N 0.000 description 1
- MFLLXRJTHGPGEB-UHFFFAOYSA-N 1-propylperoxypropane Chemical group CCCOOCCC MFLLXRJTHGPGEB-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 1H-imidazole silane Chemical class [SiH4].N1C=NC=C1 ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- FXGQUGCFZKMIJW-UHFFFAOYSA-N 2,4,5,6-tetrafluorobenzene-1,3-diamine Chemical compound NC1=C(F)C(N)=C(F)C(F)=C1F FXGQUGCFZKMIJW-UHFFFAOYSA-N 0.000 description 1
- 229960001406 2,5-dimethylisosorbide Drugs 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- JHQVCQDWGSXTFE-UHFFFAOYSA-N 2-(2-prop-2-enoxycarbonyloxyethoxy)ethyl prop-2-enyl carbonate Chemical compound C=CCOC(=O)OCCOCCOC(=O)OCC=C JHQVCQDWGSXTFE-UHFFFAOYSA-N 0.000 description 1
- UOTQEHLQKASWQO-UHFFFAOYSA-N 2-(5-sulfanylidene-2h-tetrazol-1-yl)acetic acid Chemical compound OC(=O)CN1N=NN=C1S UOTQEHLQKASWQO-UHFFFAOYSA-N 0.000 description 1
- ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 2-(trifluoromethyl)benzene-1,4-diamine Chemical compound NC1=CC=C(N)C(C(F)(F)F)=C1 ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 0.000 description 1
- FFYTTYVSDVWNMY-UHFFFAOYSA-N 2-Methyl-5-nitroimidazole Chemical compound CC1=NC=C([N+]([O-])=O)N1 FFYTTYVSDVWNMY-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- XSAYZAUNJMRRIR-UHFFFAOYSA-N 2-acetylnaphthalene Chemical compound C1=CC=CC2=CC(C(=O)C)=CC=C21 XSAYZAUNJMRRIR-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- WHNIMRYJAUUVQJ-UHFFFAOYSA-N 2-hydroxy-1,2-diphenylethanone;4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 WHNIMRYJAUUVQJ-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2-methyl-5-methylpyridine Natural products CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 1
- RFSCGDQQLKVJEJ-UHFFFAOYSA-N 2-methylbutan-2-yl benzenecarboperoxoate Chemical compound CCC(C)(C)OOC(=O)C1=CC=CC=C1 RFSCGDQQLKVJEJ-UHFFFAOYSA-N 0.000 description 1
- RCEJCSULJQNRQQ-UHFFFAOYSA-N 2-methylbutanenitrile Chemical compound CCC(C)C#N RCEJCSULJQNRQQ-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 description 1
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- LBLCXNQFTZHQPG-UHFFFAOYSA-N 3,3,5-trimethyl-1,2-dihydroindene-4,6-diamine Chemical compound CC1=C(N)C=C2CCC(C)(C)C2=C1N LBLCXNQFTZHQPG-UHFFFAOYSA-N 0.000 description 1
- ZTECVWNTLJTZLK-UHFFFAOYSA-N 3,3,7-trimethyl-1,2-dihydroindene-4,6-diamine Chemical compound C1=C(N)C(C)=C2CCC(C)(C)C2=C1N ZTECVWNTLJTZLK-UHFFFAOYSA-N 0.000 description 1
- PBTJHERGAPXNPR-UHFFFAOYSA-N 3,3-dimethyl-1,2-dihydroindene-4,6-diamine Chemical compound NC1=CC(N)=C2C(C)(C)CCC2=C1 PBTJHERGAPXNPR-UHFFFAOYSA-N 0.000 description 1
- RLLGRWMXMOAFBT-UHFFFAOYSA-N 3,3-dimethyl-1,2-dihydroindene-4,7-diamine Chemical compound NC1=CC=C(N)C2=C1C(C)(C)CC2 RLLGRWMXMOAFBT-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- PEQMXHDQUPCPQJ-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)-1,1,3-trimethyl-2h-indene-4,5-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C(C(O)=O)C2=C1C(C)(C)CC2(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 PEQMXHDQUPCPQJ-UHFFFAOYSA-N 0.000 description 1
- QPWBTLYTNOIFFC-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)-1-methyl-2,3-dihydro-1h-indene-4,5-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C(C(O)=O)C2=C1C(C)CC2C1=CC=C(C(O)=O)C(C(O)=O)=C1 QPWBTLYTNOIFFC-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- GXDMUOPCQNLBCZ-UHFFFAOYSA-N 3-(3-triethoxysilylpropyl)oxolane-2,5-dione Chemical compound CCO[Si](OCC)(OCC)CCCC1CC(=O)OC1=O GXDMUOPCQNLBCZ-UHFFFAOYSA-N 0.000 description 1
- WBUSESIMOZDSHU-UHFFFAOYSA-N 3-(4,5-dihydroimidazol-1-yl)propyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN1CCN=C1 WBUSESIMOZDSHU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- INQGLILZDPLSJY-UHFFFAOYSA-N 3-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 INQGLILZDPLSJY-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- ZRJAHFLFCRNNMR-UHFFFAOYSA-N 3-amino-2-(4-aminophenyl)benzoic acid Chemical compound C1=CC(N)=CC=C1C1=C(N)C=CC=C1C(O)=O ZRJAHFLFCRNNMR-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- AXNUJYHFQHQZBE-UHFFFAOYSA-N 3-methylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N)=C1N AXNUJYHFQHQZBE-UHFFFAOYSA-N 0.000 description 1
- YOABZRCMJMKPFF-UHFFFAOYSA-N 3-triethoxysilylaniline Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC(N)=C1 YOABZRCMJMKPFF-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- MKTOIPPVFPJEQO-UHFFFAOYSA-N 4-(3-carboxypropanoylperoxy)-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)OOC(=O)CCC(O)=O MKTOIPPVFPJEQO-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 1
- XRUKRHLZDVJJSX-UHFFFAOYSA-N 4-cyanopentanoic acid Chemical compound N#CC(C)CCC(O)=O XRUKRHLZDVJJSX-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- BMVWCPGVLSILMU-UHFFFAOYSA-N 5,6-dihydrodibenzo[2,1-b:2',1'-f][7]annulen-11-one Chemical compound C1CC2=CC=CC=C2C(=O)C2=CC=CC=C21 BMVWCPGVLSILMU-UHFFFAOYSA-N 0.000 description 1
- YZTYEGCWRPJWEE-UHFFFAOYSA-N 5-(benzotriazol-2-yl)pentan-1-amine Chemical compound C1=CC=CC2=NN(CCCCCN)N=C21 YZTYEGCWRPJWEE-UHFFFAOYSA-N 0.000 description 1
- KZSXRDLXTFEHJM-UHFFFAOYSA-N 5-(trifluoromethyl)benzene-1,3-diamine Chemical compound NC1=CC(N)=CC(C(F)(F)F)=C1 KZSXRDLXTFEHJM-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- HJSYPLCSZPEDCQ-UHFFFAOYSA-N 5-[2-(3-amino-4-methylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylaniline Chemical compound C1=C(N)C(C)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C)C(N)=C1 HJSYPLCSZPEDCQ-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 1
- WYXQDGGJZMWJOX-UHFFFAOYSA-N 5-ethyl-1-methyltetrazole Chemical compound CCC1=NN=NN1C WYXQDGGJZMWJOX-UHFFFAOYSA-N 0.000 description 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- PZKFSRWSQOQYNR-UHFFFAOYSA-N 5-methyl-1h-1,2,4-triazole Chemical compound CC1=NC=NN1 PZKFSRWSQOQYNR-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- WSYOWIMKNNMEMZ-UHFFFAOYSA-N 5-methyl-4-nitro-1h-imidazole Chemical compound CC=1NC=NC=1[N+]([O-])=O WSYOWIMKNNMEMZ-UHFFFAOYSA-N 0.000 description 1
- HCEKEODXLSQFDV-UHFFFAOYSA-N 5-methyltriazol-1-amine Chemical compound CC1=CN=NN1N HCEKEODXLSQFDV-UHFFFAOYSA-N 0.000 description 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 description 1
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical compound CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 description 1
- CAJCGERRDZYERF-UHFFFAOYSA-N 7-ethyl-3,3-dimethyl-1,2-dihydroindene-4,6-diamine Chemical compound C1=C(N)C(CC)=C2CCC(C)(C)C2=C1N CAJCGERRDZYERF-UHFFFAOYSA-N 0.000 description 1
- CPGPAVAKSZHMBP-UHFFFAOYSA-N 9-methylanthracene Chemical compound C1=CC=C2C(C)=C(C=CC=C3)C3=CC2=C1 CPGPAVAKSZHMBP-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZQGGLJAJAONAHB-UHFFFAOYSA-N C=1(C(=CC=CC1)S(=O)(=O)ON=C1C=CC(S1)=C(C#N)C1=C(C=CC=C1)C)C Chemical compound C=1(C(=CC=CC1)S(=O)(=O)ON=C1C=CC(S1)=C(C#N)C1=C(C=CC=C1)C)C ZQGGLJAJAONAHB-UHFFFAOYSA-N 0.000 description 1
- UDFGCAKEVMRBJU-UHFFFAOYSA-N CC(C[PH2]=O)CC(C)(C)C Chemical compound CC(C[PH2]=O)CC(C)(C)C UDFGCAKEVMRBJU-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZMDDERVSCYEKPQ-UHFFFAOYSA-N Ethyl (mesitylcarbonyl)phenylphosphinate Chemical compound C=1C=CC=CC=1P(=O)(OCC)C(=O)C1=C(C)C=C(C)C=C1C ZMDDERVSCYEKPQ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- YIJRDCKMWSISJY-UHFFFAOYSA-N [2-(2-hydroxy-2-phenylacetyl)phenyl]methyl 4-methylbenzenesulfonate Chemical compound C1(=CC=C(C=C1)S(=O)(=O)OCC1=C(C=CC=C1)C(=O)C(O)C1=CC=CC=C1)C YIJRDCKMWSISJY-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- NTLSYSZBWNPERW-UHFFFAOYSA-N [2-hydroxy-3-[2-hydroxy-3-(4-methylphenyl)sulfonyloxy-1,2-diphenylpropoxy]-2,3-diphenylpropyl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC(O)(C=1C=CC=CC=1)C(C=1C=CC=CC=1)OC(C(O)(COS(=O)(=O)C=1C=CC(C)=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 NTLSYSZBWNPERW-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- LOCXTTRLSIDGPS-UHFFFAOYSA-N [[1-oxo-1-(4-phenylsulfanylphenyl)octan-2-ylidene]amino] benzoate Chemical compound C=1C=C(SC=2C=CC=CC=2)C=CC=1C(=O)C(CCCCCC)=NOC(=O)C1=CC=CC=C1 LOCXTTRLSIDGPS-UHFFFAOYSA-N 0.000 description 1
- GLGXSTXZLFQYKJ-UHFFFAOYSA-N [cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound C1CCCCC1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 GLGXSTXZLFQYKJ-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000011481 absorbance measurement Methods 0.000 description 1
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical class OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- XCCCHWWMLSAIOH-UHFFFAOYSA-N anthracen-1-ylmethanol Chemical compound C1=CC=C2C=C3C(CO)=CC=CC3=CC2=C1 XCCCHWWMLSAIOH-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 1
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- CJYIPJMCGHGFNN-UHFFFAOYSA-N bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic acid Chemical compound C1C2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O CJYIPJMCGHGFNN-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- YHASWHZGWUONAO-UHFFFAOYSA-N butanoyl butanoate Chemical compound CCCC(=O)OC(=O)CCC YHASWHZGWUONAO-UHFFFAOYSA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- QVQGTNFYPJQJNM-UHFFFAOYSA-N dicyclohexylmethanamine Chemical compound C1CCCCC1C(N)C1CCCCC1 QVQGTNFYPJQJNM-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- IVJISJACKSSFGE-UHFFFAOYSA-N formaldehyde;1,3,5-triazine-2,4,6-triamine Chemical class O=C.NC1=NC(N)=NC(N)=N1 IVJISJACKSSFGE-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002357 guanidines Chemical class 0.000 description 1
- ADDJYFNBJOBKNJ-UHFFFAOYSA-N hafnium 2-prop-2-enoyloxyethane-1,1,1,2-tetracarboxylic acid Chemical compound C(=O)(O)C(C(C(=O)O)(C(=O)O)C(=O)O)OC(C=C)=O.[Hf] ADDJYFNBJOBKNJ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical group OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WFNASTYGEKUMIY-UHFFFAOYSA-N hydron;1h-imidazol-5-ylmethanol;chloride Chemical compound Cl.OCC1=CN=CN1 WFNASTYGEKUMIY-UHFFFAOYSA-N 0.000 description 1
- 229910002011 hydrophilic fumed silica Inorganic materials 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-N iodic acid;tetramethylazanium Chemical compound OI(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 125000000654 isopropylidene group Chemical group C(C)(C)=* 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- PMRYVIKBURPHAH-UHFFFAOYSA-N methimazole Chemical compound CN1C=CNC1=S PMRYVIKBURPHAH-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- BSDJDVJJSQFGOW-UHFFFAOYSA-N n,n-diethyl-2-triethoxysilylethanamine Chemical compound CCO[Si](OCC)(OCC)CCN(CC)CC BSDJDVJJSQFGOW-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- QJQAMHYHNCADNR-UHFFFAOYSA-N n-methylpropanamide Chemical compound CCC(=O)NC QJQAMHYHNCADNR-UHFFFAOYSA-N 0.000 description 1
- ILRCASAICYSGHZ-UHFFFAOYSA-N n-trimethoxysilylcyclohexanamine Chemical compound CO[Si](OC)(OC)NC1CCCCC1 ILRCASAICYSGHZ-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- OADYBSJSJUFUBR-UHFFFAOYSA-N octanedial Chemical compound O=CCCCCCCC=O OADYBSJSJUFUBR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- QDSBRLMOWFYBGK-UHFFFAOYSA-N phenacyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC(=O)C1=CC=CC=C1 QDSBRLMOWFYBGK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- NGVDGCNFYWLIFO-UHFFFAOYSA-N pyridoxal 5'-phosphate Chemical compound CC1=NC=C(COP(O)(O)=O)C(C=O)=C1O NGVDGCNFYWLIFO-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- LUFKBSXCXLLPJO-UHFFFAOYSA-N silyl cyanate Chemical class [SiH3]OC#N LUFKBSXCXLLPJO-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- FTDRQHXSYGDMNJ-UHFFFAOYSA-N trimethoxy(3-pyrrol-1-ylpropyl)silane Chemical compound CO[Si](OC)(OC)CCCN1C=CC=C1 FTDRQHXSYGDMNJ-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/04—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonamides, polyesteramides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/105—Esters of polyhydric alcohols or polyhydric phenols of pentaalcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F267/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00
- C08F267/10—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00 on to polymers of amides or imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
- C08G73/101—Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1085—Polyimides with diamino moieties or tetracarboxylic segments containing heterocyclic moieties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1092—Polysuccinimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
- C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/106—Esters of polycondensation macromers
- C08F222/1065—Esters of polycondensation macromers of alcohol terminated (poly)urethanes, e.g. urethane(meth)acrylates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Graft Or Block Polymers (AREA)
- Inorganic Insulating Materials (AREA)
- Materials For Photolithography (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
本出願は、2017年11月6日に出願された米国仮特許出願第62/581,895号、及び2017年9月11日に出願された米国仮特許出願第62/556,723号に基づく優先権を主張するものである。上記の先行出願は、その全体が参照により本明細書に取り込まれる。
a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;
c)少なくとも1種の触媒;及び
d)少なくとも1種の溶媒、
を含有する、新規な誘電フィルム形成用組成物を特に開示する。
a)本明細書に記載の誘電フィルム形成用組成物を基板上に塗布して(例:スピンコーティングによる)、誘電フィルムを形成する工程;
b)誘電フィルムを放射線源又は熱に曝露する工程;
c)フィルムをパターニングして、開口部を有するパターニングされた誘電フィルムを形成する工程;及び
d)パターニングされた誘電フィルムの少なくとも1つの開口部に、導電性金属を付与する工程、
を含む、導電性金属層を付与するための方法(例:埋め込み銅配線構造を作り出す)を特に開示する。ある実施形態では、上記方法は、導電性金属を付与する前に、パターニングされた誘電フィルム上にシード層を付与することをさらに含む。
(A)本明細書に記載の誘電フィルム形成用組成物をキャリア基板に塗布すること;
(B)塗布された組成物を乾燥して、誘電フィルムを形成すること;及び
(C)所望により、誘電フィルムに保護層を付与すること、
を含む。
a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;
c)少なくとも1種の触媒;及び
d)少なくとも1種の溶媒、
を含有する、誘電フィルム形成用組成物を特に開示する。
(A)本明細書に記載の誘電フィルム形成用組成物(例:a)少なくとも1種の完全イミド化ポリイミドポリマー;b)少なくとも1種の金属含有(メタ)アクリレート;c)少なくとも1種の触媒;d)少なくとも1種の溶媒、及びe)所望により、少なくとも1種の架橋剤を含有する組成物を、キャリア基板に塗布して、塗布された組成物を形成すること;
(B)塗布された組成物を乾燥して、誘電フィルムを形成すること;並びに
(C)所望により、誘電フィルムに保護層を付与すること、
を含む。ある実施形態では、キャリア基板は、非常に優れた光学的透明性を有しており、ポリマー層にレリーフパターンを形成するために用いられる化学線に対して実質的に透明である。キャリア基板の厚さは、好ましくは、約10μm以上(例:約15μm以上、約20μm以上、約30μm以上、約40μm以上、約50μm以上、又は約60μm以上)~約150μm以下(例:約140μm以下、約120μm以下、約100μm以下、約90μm以下、約80μm以下、又は約70μm以下)の範囲内である。
a)本明細書に記載の誘電フィルム形成用組成物を基板上に塗布して誘電フィルムを形成する工程;
b)所望により、フィルムを、約50℃~約150℃の温度で、約20秒間~約240秒間ベーキングする工程;及び
c)誘電フィルムを放射線源又は熱に曝露する工程、
を含む方法により、本開示の誘電フィルム形成用組成物から作製される。
a)本開示の誘電フィルム形成用組成物を基板上に塗布して誘電フィルムを形成する工程;
b)誘電フィルムを放射線源又は熱に曝露する工程;
c)フィルムをパターニングして(例:レーザーアブレーションプロセスにより)、開口部を有するパターニングされた誘電フィルムを形成する工程;及び
d)誘電フィルムの少なくとも1つの開口部に、金属(例:導電性金属)を付与する工程、
を含む、金属層を付与するための(例:埋め込み銅配線構造を作り出すための)方法を特に開示する。
[6FDA/DAPIポリイミドの調製]
ポリマー(P-1)、適量のメタクリロキシプロピルトリメトキシシラン、NCI-831(商品名、株式会社ADEKAから入手可能)、チタンテトラ(カルボキシエチルアクリレート)(MCA、n-ブタノール中60重量%)、シリカ、シクロヘキサノン、及び架橋剤の混合物をメカニカルスターラーで撹拌することにより、実施例1~6及び比較例1の誘電フィルム形成用組成物を調製した。メカニカルスターラーで24時間撹拌した後、この溶液をろ過することなく用いた。これらの実施例の組成を表2に示す。
各誘電フィルム形成用組成物を、シリコンウェハ上にスピンコーティングし、ホットプレートを用いて95℃で10分間ベーキングして、塗布を形成した。次に、このフィルムを、広帯域UV露光ツール
実施例2の誘電フィルム形成用組成物のレーザーアブレーションの結果、6.2ミクロンのフィルム上に2×2ミクロン(ライン/スペース)の解像度が得られた(例:アスペクト比=6.2/2、又は3.1)。レーザーアブレーションプロセスの過程でほとんど又はまったくデブリが形成しなかったことから、バリア層の付与の前にデブリ除去工程又は前処理プロセスを行う必要がなかった。
銅シーディング層を、上記バリア層の上に同様のスパッタリングツールを用いることにより付与した。420nmの厚さを有する銅シーディング層が、50mAの電流で60分間で形成された。
異なるサイズのウェハ用に設計されためっきユニット中で電気めっきを行った。整流器の形態の電源(交流の電気を制御された低電圧DC電流に変換する)により、必要な電流を供給した。電気めっきの前に、上記で得た加工物(ウェハ)を、10%H2SO4で洗浄し、続いて脱イオン水でリンスした。電気めっき浴(主成分:電解質としての脱イオン水中の3%メタンスルホン酸及び5%CuSO4・5H2O)に浸漬した電極を、DC電流源の出力に接続した。電気めっきされるウェハは、負に帯電したカソードとして作用した。正に帯電したアノードにより電気回路が完成する。電気めっき浴を25℃に維持しながら、電解質を毎分6ガロンの速度で再循環させた。銅付与の均一性を維持するために、セルは、適切なインサート部を備えたバッフルを有するように設計した。電流を4.4アンペアに、電圧を8.8ボルトに維持した場合、銅は毎分1ミクロンの速度で付与された。銅の余剰部分は2ミクロンであった。
90%脱イオン水及び10%塩化銅(II)の混合物を調製し、続いて塩酸を添加してpHを1に調節することにより、銅エッチング剤を調製した。この銅エッチング剤に上記で得られたウェハを浸漬し、これにより、2ミクロンの銅余剰部分が室温で20分後に除去された。98.994%脱イオン水、1%フッ化水素酸、及び0.006%ポリエチレンイミン(200ダルトンのMW)を混合することにより、チタンエッチング剤を調製した。このチタンエッチング剤に上記で得られたウェハを浸漬し、これにより、バリア層(26nm)が室温において1分間で除去された。埋め込み銅配線構造を有するウェハが得られた。
比較例1の組成物から形成された誘電フィルムのレーザーアブレーションの結果、11ミクロンのフィルム上に8×8ミクロン(ライン/スペース)の解像度が得られた(例:アスペクト比=11/8、又は1.4)。大量のデブリが発生した。したがって、バリア層付与の前にデブリを除去する必要があった。2.5重量%テトラメチルアンモニウムヒドロキシド(TMAH)、7.5重量%脱イオン水、0.5重量%硫酸ヒドロキシルアミン、4.3重量%モノメタノールアミン、85重量%テトラヒドロフルフリルアルコール、及び0.2重量%5-メチル-1H-ベンゾトリアゾールからなるデブリ除去組成物を用いた。このデブリ除去組成物を60℃に加熱し、このデブリ除去組成物中に上記ウェハを5分間浸漬することにより、ウェハの処理を行った。ウェハを水で洗浄し、次に乾燥した。この処理の後、デブリが完全に除去された。
比較例3のパターニングされたフィルム上に、スパッタリング技術を用いてバリア層(チタン)を付与した。この付与は、Denton Vacuum Desktopユニットを56mAの電流で用いて行った。26nmの厚さを有するチタンバリア層が、16分間で形成した。
銅シーディング層を、上記バリア層の上に同様のスパッタリングツールを用いることにより付与した。420nmの厚さを有する銅シーディング層が、50mAの電流で60分間で形成した。
電気めっきを時間を長くした以外は、実施例15に記載の方法と同様な方法で行った。銅の余剰部分は20ミクロンであった。
銅の余剰部分を、CMPプロセスにより除去した。銅バルクスラリーを、175mL/分のスラリー流速でMirra AMATポリッシャー上で用いた。CMPプロセスの合計時間は10分間であった。この研磨工程の完了後、酸性洗浄剤でウェハを洗浄し、ウェハの表面に付着した有機残渣及び粒子を除去した。
実施例1の誘電フィルム形成用組成物を、透明の4インチガラスウェハの上に3.0μmの厚さでスピンコーティングし、95℃で180秒間のソフトベークを行った(soft baked)。この自立ドライフィルムの吸光度を、CARY 400Conc.UV-可視分光光度計を用いて300~405nmの波長範囲内で測定した。このフィルムの吸光度は、308nmで0.383μm-1、355nmで0.125μm-1、365nmで0.127μm-1、及び405nmで0.058μm-1であった。
339.00gのポリマー(P-1)、18.00gのメタクリロキシプロピルトリメトキシシラン、10.80gのOXE-01(商品名、BASF SEから入手可能)、114.00gのチタンテトラ(カルボキシエチルアクリレート)(n-ブタノール中の60重量%)、340.11gのシクロヘキサノン、126.00gのArkema-Sartomerから入手可能であるテトラエチレングリコールジアクリレート、及び252.0gのウレタンアクリレート(CN992、商品名、Arkema-Sartomerから入手可能)を用いることにより、実施例18の誘電フィルム形成用組成物を調製した。メカニカルスターラーで24時間撹拌した後、0.2ミクロンフィルターを用いて組成物をろ過した。
Fujifilm USA(グリーンウッド、サウスカロライナ州)製のスロットダイコーターを用いて、キャリア基板として用いた幅20.2インチ及び厚さ35ミクロンのポリエチレンテレフタレート(PET)フィルム(Hostaphan3915、Mitsubishi Polyester Film,Inc.製)上に、2フィート/分(毎分60cm)のライン速度、30ミクロンのマイクロバークリアランス(microbar clearance)で実施例18のろ過した誘電フィルム形成用組成物を塗布し、197°Fで乾燥して、およそ10.0ミクロンの厚さを有する誘電層を得た。この誘電層上に、ロール圧縮により幅20.2インチ及び厚さ20ミクロンの二軸延伸ポリプロピレンフィルム(BOPP、ブルーミントン、インディアナ州、Mirwec Film Inc.製、商品名BOPLON)を積層し、保護層として作用させた。
470.98gのポリマー(P-1)、15.00gのメタクリロキシプロピルトリメトキシシラン、9.00gのNCI-831(商品名、株式会社ADEKAから入手可能)、175.00gのチタンテトラ(カルボキシエチルアクリレート)(n-ブタノール中の60重量%)、289.04gのシクロヘキサノン、141.00gのArkema-Sartomerから入手可能であるテトラエチレングリコールジアクリレート、750gのシクロヘキサノン中分散20%シリカ、及び150.00gのウレタンアクリレート(CN992、商品名、Arkema-Sartomerから入手可能)を用いることにより、実施例20の誘電フィルム形成用組成物を作製した。メカニカルスターラーで24時間撹拌した後、この溶液をろ過することなく用いた。
Fujifilm USA(グリーンウッド、サウスカロライナ州)製のスロットダイコーターを用いて、キャリア基板として用いられる幅20.2インチ及び厚さ35ミクロンのポリエチレンテレフタレート(PET)フィルム(Hostaphan3915、Mitsubishi Polyester Film,Inc.製)上に、2フィート/分(毎分60cm)のライン速度、30ミクロンのマイクロバークリアランスで実施例20の未ろ過の誘電フィルム形成用組成物を塗布し、197°Fで乾燥して、およそ10.0ミクロンの厚さを有する誘電層を得た。このポリマー層上に、ロール圧縮により幅20.2インチ及び厚さ20ミクロンを有する二軸延伸ポリプロピレンフィルム(BOPP、ブルーミントン、インディアナ州、Mirwec Film Inc.製、商品名BOPLON)を積層し、保護層として作用させた。
28.00gのポリマー(Poly-1)、46.88gのシクロペンタノン、80.00gのシクロヘキサノン、0.84gのN-(3-トリメトキシシリルプロピル)ピロール、1.40gの1-(O-アセチルオキシム)-1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]エタノン(OXE-02(BASFから入手可能)、6.20gのハフニウムテトラカルボキシエチルアクリレート、11.00gの中サイズ0.45ミクロンを有するチタニア、14gのトリエチレングリコールジメタクリレート、17.50gのCN992(Sartomerから入手可能)、0.84gのシクロペンタノン中Polyfox6320の0.05%溶液、及び0.07gのp-ベンゾキノンを用いることにより、調合例22を調製する。メカニカルスターラーで24時間撹拌した後、この調合物をろ過することなく用いる。
26.00gのポリマー(Poly-1)、47.00gのシクロペンタノン、75.00gのシクロヘキサノン、0.80gのN-(3-トリエトキシシリルプロピル)-4,5-ジヒドロイミダゾール、1.50gのベンゾイルペルオキシド、7.50gのジルコニウムブトキシドトリ(メタ)アクリレート、17.0gのテトラエチレングリコールジアクリレート(SR-209、Sartomerから入手可能)、14.00gのペンタエリスリトールトリアクリレート、0.72gのシクロペンタノン中Polyfox6320の0.05%溶液、及び0.05gのp-ベンゾキノンを用いることにより、調合例23を調製する。メカニカルスターラーで30時間撹拌した後、この調合物をろ過することなく用いる。
[付記]
本開示は下記の態様<1>~<44>も含む。
<1>
a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;
c)少なくとも1種の触媒;及び
d)少なくとも1種の溶媒、
を含む、誘電フィルム形成用組成物。
<2>
前記少なくとも1種の金属含有(メタ)アクリレートの金属原子は、チタン、ジルコニウム、ハフニウム、及びゲルマニウムからなる群より選択される、<1>に記載の組成物。
<3>
前記少なくとも1種の金属含有(メタ)アクリレートは、少なくとも1つの金属原子及び少なくとも1つの(メタ)アクリレート基を含む、<1>に記載の組成物。
<4>
前記少なくとも1種の金属含有(メタ)アクリレートは、チタンテトラ(メタ)アクリレート、ジルコニウムテトラ(メタ)アクリレート、ハフニウムテトラ(メタ)アクリレート、チタンブトキシドトリ(メタ)アクリレート、チタンジブトキシドジ(メタ)アクリレート、チタントリブトキシド(メタ)アクリレート、ジルコニウムブトキシドトリ(メタ)アクリレート、ジルコニウムジブトキシドジ(メタ)アクリレート、ジルコニウムトリブトキシド(メタ)アクリレート、ハフニウムブトキシドトリ(メタ)アクリレート、ハフニウムジブトキシドジ(メタ)アクリレート、ハフニウムトリブトキシド(メタ)アクリレート、チタンテトラ(カルボキシエチル(メタ)アクリレート)、ジルコニウムテトラ(カルボキシエチル(メタ)アクリレート)、ハフニウムテトラ(カルボキシエチル(メタ)アクリレート)、チタンブトキシドトリ(カルボキシエチル(メタ)アクリレート)、チタンジブトキシドジ(カルボキシエチル(メタ)アクリレート)、チタントリブトキシド(カルボキシエチル(メタ)アクリレート)、ジルコニウムブトキシドトリ(カルボキシエチル(メタ)アクリレート)、ジルコニウムジブトキシドジ(カルボキシエチル(メタ)アクリレート)、ジルコニウムトリブトキシド(カルボキシエチル(メタ)アクリレート)、ハフニウムブトキシドトリ(カルボキシエチル(メタ)アクリレート)、ハフニウムジブトキシドジ(カルボキシエチル(メタ)アクリレート)、又はハフニウムトリブトキシド(カルボキシエチル(メタ)アクリレート)を含む、<1>に記載の組成物。
<5>
前記少なくとも1種の金属含有(メタ)アクリレートは、前記組成物の約0.5重量%~約20重量%の量で存在する、<1>に記載の組成物。
<6>
前記少なくとも1種の完全イミド化ポリイミドポリマーは、前記組成物の約3重量%~約40重量%の量で存在する、<1>に記載の組成物。
<7>
前記少なくとも1種の触媒は、光開始剤又は熱開始剤を含む、<1>に記載の組成物。
<8>
前記少なくとも1種の触媒は、前記組成物の約0.25重量%~約4重量%の量で存在する、<1>に記載の組成物。
<9>
前記少なくとも1種の溶媒は、前記組成物の約35重量%~約98重量%の量で存在する、<1>に記載の組成物。
<10>
少なくとも1種の架橋剤をさらに含む、<1>に記載の組成物。
<11>
前記架橋剤は、2つ以上のアルケニル又はアルキニル基を含む、<10>に記載の組成物。
<12>
少なくとも1種のフィラーをさらに含む、<1>に記載の組成物。
<13>
前記少なくとも1種のフィラーは、シリカ、アルミナ、チタニア、ジルコニア、酸化ハフニウム、CdSe、CdS、CdTe、CuO、酸化亜鉛、酸化ランタン、酸化ニオブ、酸化タングステン、酸化ストロンチウム、チタン酸カルシウム、チタン酸ナトリウム、硫酸バリウム、チタン酸バリウム、ジルコン酸バリウム、及びニオブ酸カリウムからなる群より選択される無機粒子を含む、<12>に記載の組成物。
<14>
レーザーアブレーションプロセス(laser ablation process)によりパターニングされた場合に、実質的にデブリが発生しない誘電フィルムを形成する、<1>に記載の組成物。
<15>
<1>に記載の組成物により形成された誘電フィルム。
<16>
a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;及び
c)少なくとも1種の触媒、
を含む、誘電フィルム。
<17>
自立誘電フィルムである、<16>に記載の誘電フィルム。
<18>
a)<1>に記載の組成物を基板上に付与して、誘電フィルムを形成すること;
b)前記誘電フィルムを放射線源又は熱に曝露すること;
c)前記誘電フィルムをパターニングして、開口部を有するパターニングされた誘電フィルムを形成すること;
d)前記パターニングされた誘電フィルム上にシード層を付与すること;及び
e)前記パターニングされた誘電フィルムの少なくとも1つの開口部に、導電性金属層を付与すること、
を含む、導電性金属層を付与するための方法。
<19>
前記導電性金属の余剰部分(overburden)を除去すること又は前記シード層を除去することをさらに含む、<18>に記載の方法。
<20>
前記導電性金属の余剰部分を除去すること又は前記シード層を除去することは、ウェットエッチングにより行われる、<18>に記載の方法。
<21>
前記誘電フィルムを放射線源又は熱に曝露することは、前記誘電フィルムを約70℃~約250℃の温度で加熱することを含む、<18>に記載の方法。
<22>
前記誘電フィルムの前記パターニングは、レーザーアブレーションプロセスにより行われる、<18>に記載の方法。
<23>
前記レーザーアブレーションプロセスの結果、実質的にデブリが発生しない、<22>に記載の方法。
<24>
前記パターニングされた誘電フィルムは、約3ミクロン以下のフィーチャサイズを有する少なくとも1つの要素を含む、<18>に記載の方法。
<25>
前記導電性金属層は、銅を含む、<18>に記載の方法。
<26>
前記余剰部分は、約2ミクロン以下の厚さを有する、<19>に記載の方法。
<27>
前記シード層は、デブリ除去プロセス又は前処理プロセスを用いることなく付与される、<18>に記載の方法。
<28>
導電性金属余剰部分を処理するための、化学機械的平坦化プロセス又は化学機械的平坦化後の洗浄プロセスを含まない、<18>に記載の方法。
<29>
<18>に記載の方法により形成された三次元物体。
<30>
<29>に記載の三次元物体を含む半導体デバイス。
<31>
集積回路、発光ダイオード、太陽電池、又はトランジスタである、<30>に記載の半導体デバイス。
<32>
(A)<1>に記載の誘電フィルム形成用組成物をキャリア基板に塗布して、塗布された組成物を形成すること;
(B)前記塗布された組成物を乾燥して、誘電フィルムを形成すること;及び
(C)所望により、前記誘電フィルム上に保護層を付与すること、
を含む、ドライフィルム構造体を作製するための方法。
<33>
a)感光性誘電フィルムを基板上に形成すること;
b)前記誘電フィルムを放射線源又は熱に曝露すること;
c)前記誘電フィルムをパターニングして、開口部を有するパターニングされた誘電フィルムを形成すること;
d)前記パターニングされた誘電フィルム上にシード層を付与すること;及び
e)前記パターニングされた誘電フィルムの少なくとも1つの開口部に、導電性金属層を付与すること-ここで、導電性金属層を付与することにより、約2ミクロン以下の厚さを有する導電性金属余剰部分が形成される、
を含む、導電性金属層を付与するための方法。
<34>
前記導電性金属余剰部分を除去すること又は前記シード層を除去することをさらに含む、<33>に記載の方法。
<35>
前記導電性金属余剰部分を除去すること又は前記シード層を除去することは、ウェットエッチングにより行われる、<34>に記載の方法。
<36>
前記誘電フィルムを放射線源又は熱に曝露することは、前記誘電フィルムを約70℃~約250℃の温度で加熱することを含む、<33>に記載の方法。
<37>
前記誘電フィルムの前記パターニングは、レーザーアブレーションプロセスにより行われる、<33>に記載の方法。
<38>
前記レーザーアブレーションプロセスの結果、実質的にデブリが発生しない、<37>に記載の方法。
<39>
前記パターニングされた誘電フィルムは、約3ミクロン以下のフィーチャサイズを有する少なくとも1つの要素を含む、<33>に記載の方法。
<40>
前記導電性金属層は、銅を含む、<33>に記載の方法。
<41>
前記シード層は、デブリ除去プロセス又は前処理プロセスを用いることなく付与される、<33>に記載の方法。
<42>
導電性金属余剰部分の処理のための、化学機械的平坦化プロセス又は化学機械的平坦化後の洗浄プロセスを含まない、<33>に記載の方法。
<43>
a)少なくとも1種の完全イミド化ポリイミドポリマー;及び
b)少なくとも1種の架橋された金属含有(メタ)アクリレート、
を含む、誘電フィルム。
<44>
自立誘電フィルムである、<43>に記載の誘電フィルム。
Claims (45)
- a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;
c)少なくとも1種の触媒;及び
d)少なくとも1種の溶媒、
を含む、誘電フィルム形成用組成物。 - 前記少なくとも1種の金属含有(メタ)アクリレートの金属原子は、チタン、ジルコニウム、ハフニウム、及びゲルマニウムからなる群より選択される、請求項1に記載の組成物。
- 前記少なくとも1種の金属含有(メタ)アクリレートは、少なくとも1つの金属原子及び少なくとも1つの(メタ)アクリレート基を含む、請求項1又は請求項2に記載の組成物。
- 前記少なくとも1種の金属含有(メタ)アクリレートは、チタンテトラ(メタ)アクリレート、ジルコニウムテトラ(メタ)アクリレート、ハフニウムテトラ(メタ)アクリレート、チタンブトキシドトリ(メタ)アクリレート、チタンジブトキシドジ(メタ)アクリレート、チタントリブトキシド(メタ)アクリレート、ジルコニウムブトキシドトリ(メタ)アクリレート、ジルコニウムジブトキシドジ(メタ)アクリレート、ジルコニウムトリブトキシド(メタ)アクリレート、ハフニウムブトキシドトリ(メタ)アクリレート、ハフニウムジブトキシドジ(メタ)アクリレート、ハフニウムトリブトキシド(メタ)アクリレート、チタンテトラ(カルボキシエチル(メタ)アクリレート)、ジルコニウムテトラ(カルボキシエチル(メタ)アクリレート)、ハフニウムテトラ(カルボキシエチル(メタ)アクリレート)、チタンブトキシドトリ(カルボキシエチル(メタ)アクリレート)、チタンジブトキシドジ(カルボキシエチル(メタ)アクリレート)、チタントリブトキシド(カルボキシエチル(メタ)アクリレート)、ジルコニウムブトキシドトリ(カルボキシエチル(メタ)アクリレート)、ジルコニウムジブトキシドジ(カルボキシエチル(メタ)アクリレート)、ジルコニウムトリブトキシド(カルボキシエチル(メタ)アクリレート)、ハフニウムブトキシドトリ(カルボキシエチル(メタ)アクリレート)、ハフニウムジブトキシドジ(カルボキシエチル(メタ)アクリレート)、又はハフニウムトリブトキシド(カルボキシエチル(メタ)アクリレート)を含む、請求項1~請求項3のいずれか1項に記載の組成物。
- 前記少なくとも1種の金属含有(メタ)アクリレートは、前記組成物の0.5重量%~20重量%の量で存在する、請求項1~請求項4のいずれか1項に記載の組成物。
- 前記少なくとも1種の完全イミド化ポリイミドポリマーは、前記組成物の3重量%~40重量%の量で存在する、請求項1~請求項5のいずれか1項に記載の組成物。
- 前記少なくとも1種の触媒は、光開始剤又は熱開始剤を含む、請求項1~請求項6のいずれか1項に記載の組成物。
- 前記少なくとも1種の触媒は、前記組成物の0.25重量%~4重量%の量で存在する、請求項1~請求項7のいずれか1項に記載の組成物。
- 前記少なくとも1種の溶媒は、前記組成物の35重量%~98重量%の量で存在する、請求項1~請求項8のいずれか1項に記載の組成物。
- 少なくとも1種の架橋剤をさらに含む、請求項1~請求項9のいずれか1項に記載の組成物。
- 前記架橋剤は、2つ以上のアルケニル又はアルキニル基を含む、請求項10に記載の組成物。
- 少なくとも1種のフィラーをさらに含む、請求項1~請求項11のいずれか1項に記載の組成物。
- 前記少なくとも1種のフィラーは、シリカ、アルミナ、チタニア、ジルコニア、酸化ハフニウム、CdSe、CdS、CdTe、CuO、酸化亜鉛、酸化ランタン、酸化ニオブ、酸化タングステン、酸化ストロンチウム、チタン酸カルシウム、チタン酸ナトリウム、硫酸バリウム、チタン酸バリウム、ジルコン酸バリウム、及びニオブ酸カリウムからなる群より選択される無機粒子を含む、請求項12に記載の組成物。
- レーザーアブレーションプロセス(laser ablation process)によりパターニングされた場合に、実質的にデブリが発生しない誘電フィルムを形成する、請求項1~請求項13のいずれか1項に記載の組成物。
- 請求項1~請求項14のいずれか1項に記載の組成物により形成された誘電フィルム。
- a)少なくとも1種の完全イミド化ポリイミドポリマー;
b)少なくとも1種の金属含有(メタ)アクリレート;及び
c)少なくとも1種の触媒、
を含む、誘電フィルム。 - 自立誘電フィルムである、請求項16に記載の誘電フィルム。
- a)請求項1~請求項14のいずれか1項に記載の組成物を基板上に付与して、誘電フィルムを形成すること;
b)前記誘電フィルムを放射線源又は熱に曝露すること;
c)前記誘電フィルムをパターニングして、開口部を有するパターニングされた誘電フィルムを形成すること;
d)前記パターニングされた誘電フィルム上にシード層を付与すること;及び
e)前記パターニングされた誘電フィルムの少なくとも1つの開口部に、導電性金属層を付与すること、
を含む、導電性金属層を付与するための方法。 - 前記導電性金属の余剰部分(overburden)を除去すること又は前記シード層を除去することをさらに含む、請求項18に記載の方法。
- 前記導電性金属の余剰部分を除去すること又は前記シード層を除去することは、ウェットエッチングにより行われる、請求項18又は請求項19に記載の方法。
- 前記余剰部分は、2ミクロン以下の厚さを有する、請求項19又は請求項20に記載の方法。
- 導電性金属余剰部分を処理するための、化学機械的平坦化プロセス又は化学機械的平坦化後の洗浄プロセスを含まない、請求項18に記載の方法。
- 前記誘電フィルムを放射線源又は熱に曝露することは、前記誘電フィルムを70℃~250℃の温度で加熱することを含む、請求項18~請求項22のいずれか1項に記載の方法。
- 前記誘電フィルムの前記パターニングは、レーザーアブレーションプロセスにより行われる、請求項18~請求項23のいずれか1項に記載の方法。
- 前記レーザーアブレーションプロセスの結果、実質的にデブリが発生しない、請求項24に記載の方法。
- 前記パターニングされた誘電フィルムは、3ミクロン以下のフィーチャサイズを有する少なくとも1つの要素を含む、請求項18~請求項25のいずれか1項に記載の方法。
- 前記導電性金属層は、銅を含む、請求項18~請求項26のいずれか1項に記載の方法。
- 前記シード層は、デブリ除去プロセス又は前処理プロセスを用いることなく付与される、請求項18~請求項27のいずれか1項に記載の方法。
- 請求項18~請求項28のいずれか1項に記載の方法により形成された三次元物体。
- 請求項29に記載の三次元物体を含む半導体デバイス。
- 集積回路、発光ダイオード、太陽電池、又はトランジスタである、請求項30に記載の半導体デバイス。
- (A)請求項1~請求項14のいずれか1項に記載の誘電フィルム形成用組成物をキャリア基板に塗布して、塗布された組成物を形成すること;
(B)前記塗布された組成物を乾燥して、誘電フィルムを形成すること;及び
(C)所望により、前記誘電フィルム上に保護層を付与すること、
を含む、ドライフィルム構造体を作製するための方法。 - a)請求項16又は請求項17に記載の誘電フィルムを基板上に形成すること;
b)前記誘電フィルムを放射線源又は熱に曝露すること;
c)前記誘電フィルムをパターニングして、開口部を有するパターニングされた誘電フィルムを形成すること;
d)前記パターニングされた誘電フィルム上にシード層を付与すること;及び
e)前記パターニングされた誘電フィルムの少なくとも1つの開口部に、導電性金属層を付与すること-ここで、導電性金属層を付与することにより、2ミクロン以下の厚さを有する導電性金属余剰部分が形成される、
を含む、導電性金属層を付与するための方法。 - 前記導電性金属余剰部分を除去すること又は前記シード層を除去することをさらに含む、請求項33に記載の方法。
- 前記導電性金属余剰部分を除去すること又は前記シード層を除去することは、ウェットエッチングにより行われる、請求項34に記載の方法。
- 導電性金属余剰部分の処理のための、化学機械的平坦化プロセス又は化学機械的平坦化後の洗浄プロセスを含まない、請求項33に記載の方法。
- 前記誘電フィルムを放射線源又は熱に曝露することは、前記誘電フィルムを70℃~250℃の温度で加熱することを含む、請求項33~請求項36のいずれか1項に記載の方法。
- 前記誘電フィルムの前記パターニングは、レーザーアブレーションプロセスにより行われる、請求項33~請求項37のいずれか1項に記載の方法。
- 前記レーザーアブレーションプロセスの結果、実質的にデブリが発生しない、請求項38に記載の方法。
- 前記パターニングされた誘電フィルムは、3ミクロン以下のフィーチャサイズを有する少なくとも1つの要素を含む、請求項33~請求項39のいずれか1項に記載の方法。
- 前記導電性金属層は、銅を含む、請求項33~請求項40のいずれか1項に記載の方法。
- 前記シード層は、デブリ除去プロセス又は前処理プロセスを用いることなく付与される、請求項33~請求項41のいずれか1項に記載の方法。
- a)少なくとも1種の完全イミド化ポリイミドポリマー;及び
b)少なくとも1種の架橋された金属含有(メタ)アクリレート、
を含む、誘電フィルム。 - 自立誘電フィルムである、請求項43に記載の誘電フィルム。
- 請求項1~請求項14のいずれか1項に記載の誘電フィルム形成用組成物を基板上に塗布して、誘電フィルムを形成すること;
前記誘電フィルムを50℃~150℃の温度でベーキング(baking)すること;及び
前記誘電フィルムを放射線源又は熱源に曝露して、架橋誘電フィルムを形成すること
を含む、架橋誘電フィルムを作製するための方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762556723P | 2017-09-11 | 2017-09-11 | |
US62/556,723 | 2017-09-11 | ||
US201762581895P | 2017-11-06 | 2017-11-06 | |
US62/581,895 | 2017-11-06 | ||
PCT/US2018/020102 WO2019050565A1 (en) | 2017-09-11 | 2018-02-28 | COMPOSITION FORMING DIELECTRIC FILM |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020533418A JP2020533418A (ja) | 2020-11-19 |
JP7140686B2 true JP7140686B2 (ja) | 2022-09-21 |
Family
ID=64426854
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018559767A Active JP7140686B2 (ja) | 2017-09-11 | 2018-02-28 | 誘電フィルム形成用組成物 |
JP2018560516A Active JP7140687B2 (ja) | 2017-09-11 | 2018-02-28 | 誘電フィルム形成用組成物 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018560516A Active JP7140687B2 (ja) | 2017-09-11 | 2018-02-28 | 誘電フィルム形成用組成物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US10875965B2 (ja) |
EP (2) | EP3478482B1 (ja) |
JP (2) | JP7140686B2 (ja) |
KR (2) | KR102456361B1 (ja) |
CN (2) | CN109790405B (ja) |
PH (2) | PH12018550157A1 (ja) |
TW (2) | TWI776863B (ja) |
WO (2) | WO2019050565A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3286605B1 (en) | 2015-04-21 | 2023-06-28 | FujiFilm Electronic Materials USA, Inc. | Photosensitive polyimide compositions |
US10875965B2 (en) * | 2017-09-11 | 2020-12-29 | Fujifilm Electronic Materials U.S.A., Inc. | Dielectric film forming composition |
US20210109443A1 (en) * | 2019-01-23 | 2021-04-15 | Microcosm Technology Co., Ltd. | Photosensitive polyimide resin composition and polyimide film thereof |
CN110499087A (zh) * | 2019-08-02 | 2019-11-26 | 刘宁 | 一种提高配电柜柜体表面耐腐蚀性能的方法 |
WO2021067547A1 (en) * | 2019-10-04 | 2021-04-08 | Fujifilm Electronic Materials U.S.A., Inc. | Planarizing process and composition |
CN111113754B (zh) * | 2019-11-22 | 2020-12-04 | 桂林电器科学研究院有限公司 | 一种提高聚酰胺酸薄膜边部强度的方法 |
CN115516603A (zh) * | 2020-03-10 | 2022-12-23 | 富士胶片电子材料美国有限公司 | 金属沉积方法 |
EP4176001A1 (en) | 2020-07-02 | 2023-05-10 | FUJIFILM Electronic Materials U.S.A, Inc. | Dielectric film-forming composition |
WO2022015695A1 (en) * | 2020-07-15 | 2022-01-20 | Fujifilm Electronic Materials U.S.A., Inc. | Dielectric film forming compositions |
EP4232421A4 (en) * | 2020-10-22 | 2024-03-27 | FUJIFILM Electronic Materials U.S.A, Inc. | DIELECTRIC FILM-FORMING COMPOSITION |
TWI753657B (zh) * | 2020-11-17 | 2022-01-21 | 位速科技股份有限公司 | 鈣鈦礦光電元件 |
CN112531118B (zh) * | 2020-11-18 | 2023-11-07 | 位速科技股份有限公司 | 钙钛矿光电元件 |
WO2024024783A1 (ja) * | 2022-07-29 | 2024-02-01 | 富士フイルム株式会社 | 転写フィルム、積層体の製造方法、積層体、半導体パッケージの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090212292A1 (en) | 2005-06-01 | 2009-08-27 | Carl Hayton | Layer-selective laser ablation patterning |
JP2011530652A (ja) | 2008-08-07 | 2011-12-22 | プライオグ リミテッド ライアビリティ カンパニー | 金属組成物及びその製法 |
JP2018517168A (ja) | 2015-04-21 | 2018-06-28 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 感光性ポリイミド組成物 |
JP2018526668A (ja) | 2015-09-29 | 2018-09-13 | プライオグ リミテッド ライアビリティ カンパニーPryog,Llc | 金属組成物及びその製法 |
JP2020533419A (ja) | 2017-09-11 | 2020-11-19 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 誘電フィルム形成用組成物 |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2731447A (en) | 1954-06-11 | 1956-01-17 | Du Pont | Novel polyimides |
US3435002A (en) | 1967-05-15 | 1969-03-25 | Gen Electric | Polyamide acid resins and polyimides therefrom |
US3856752A (en) | 1973-10-01 | 1974-12-24 | Ciba Geigy Corp | Soluble polyimides derived from phenylindane diamines and dianhydrides |
DE2437348B2 (de) | 1974-08-02 | 1976-10-07 | Ausscheidung in: 24 62 105 | Verfahren zur herstellung von reliefstrukturen |
US4026876A (en) | 1975-01-20 | 1977-05-31 | Ciba-Geigy Corporation | Soluble polyamide-imides derived from phenylindane diamines |
US3983092A (en) | 1975-01-20 | 1976-09-28 | Ciba-Geigy Corporation | Phenylindane diamine mixture and epoxy resin therewith |
US4579809A (en) | 1982-10-22 | 1986-04-01 | Ciba-Geigy Corporation | Positive image formation |
US4629777A (en) | 1983-05-18 | 1986-12-16 | Ciba-Geigy Corporation | Polyimides, a process for their preparation and their use |
US4656116A (en) | 1983-10-12 | 1987-04-07 | Ciba-Geigy Corporation | Radiation-sensitive coating composition |
JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
US4608409A (en) | 1985-05-08 | 1986-08-26 | Desoto, Inc. | Polyacrylated oligomers in ultraviolet curable optical fiber coatings |
EP0540508B1 (en) | 1985-07-31 | 1996-03-06 | Sumitomo Chemical Company, Limited | Imide hardeners and their preparation |
JPH0616174B2 (ja) | 1985-08-12 | 1994-03-02 | 三菱化成株式会社 | ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物 |
JPH083630B2 (ja) | 1986-01-23 | 1996-01-17 | 富士写真フイルム株式会社 | 感光性組成物 |
JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
CA1326673C (en) | 1986-12-26 | 1994-02-01 | Yasuhisa Saito | Imide compound and composition containing the same |
US5006611A (en) | 1989-01-20 | 1991-04-09 | Ciba-Geigy Corporation | Curable epoxy resin compositions of matter containing a thermoplastic which has phenolic end groups |
US5122436A (en) | 1990-04-26 | 1992-06-16 | Eastman Kodak Company | Curable composition |
EP0584410A1 (en) | 1991-07-05 | 1994-03-02 | Conductus, Inc. | Superconducting electronic structures and methods of preparing same |
US5397863A (en) | 1991-09-13 | 1995-03-14 | International Business Machines Corporation | Fluorinated carbon polymer composites |
US5252534A (en) | 1992-05-29 | 1993-10-12 | Eastman Kodak Company | Slipping layer of polyimide-siloxane for dye-donor element used in thermal dye transfer |
US5302547A (en) | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
US5412065A (en) | 1993-04-09 | 1995-05-02 | Ciba-Geigy Corporation | Polyimide oligomers |
JP3112229B2 (ja) | 1993-06-30 | 2000-11-27 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US5578697A (en) | 1994-03-29 | 1996-11-26 | Kabushiki Kaisha Toshiba | Polyimide precursor, bismaleimide-based cured resin precursor and electronic parts having insulating members made from these precursors |
JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
JP3257325B2 (ja) | 1995-01-31 | 2002-02-18 | ジェイエスアール株式会社 | ポリイミド系共重合体の製造方法、薄膜形成剤、並びに液晶配向膜の製造方法 |
JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
JP3562599B2 (ja) | 1995-08-18 | 2004-09-08 | 大日本インキ化学工業株式会社 | フォトレジスト組成物 |
TW369554B (en) * | 1995-10-19 | 1999-09-11 | Three Bond Co Ltd | Photocurable composition |
US5783656A (en) | 1996-02-06 | 1998-07-21 | Japan Synthetic Rubber Co., Ltd. | Polyamic acid, polyimide and liquid crystal aligning agent |
DE69732949T2 (de) | 1996-05-16 | 2006-02-23 | Jsr Corp. | Flüssigkristallausrichtungsmittel |
US5874770A (en) * | 1996-10-10 | 1999-02-23 | General Electric Company | Flexible interconnect film including resistor and capacitor layers |
KR20000052823A (ko) | 1996-10-29 | 2000-08-25 | 나카노 카쯔히코 | 변성 열가소성 노르보르넨계 중합체 및 그 제조방법 |
DE69832444T2 (de) | 1997-09-11 | 2006-08-03 | E.I. Dupont De Nemours And Co., Wilmington | Flexible Polyimidfolie mit hoher dielektrischer Konstante |
US6114240A (en) | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
US6036809A (en) | 1999-02-16 | 2000-03-14 | International Business Machines Corporation | Process for releasing a thin-film structure from a substrate |
JP2000294922A (ja) * | 1999-04-01 | 2000-10-20 | Victor Co Of Japan Ltd | 多層プリント配線板用の絶縁樹脂組成物 |
JP3736607B2 (ja) | 2000-01-21 | 2006-01-18 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP4717268B2 (ja) * | 2001-01-12 | 2011-07-06 | 富士通株式会社 | 絶縁樹脂組成物及びそれから形成した絶縁層を含む多層回路基板 |
JP2004536693A (ja) * | 2001-04-19 | 2004-12-09 | ゼネラル・エレクトリック・カンパニイ | スピンコート媒体 |
CN1522387A (zh) | 2001-05-30 | 2004-08-18 | 钟渊化学工业株式会社 | 光敏性树脂组合物及用该组合物的光敏性干膜抗蚀剂、光敏性射线遮挡膜 |
CN1324402C (zh) | 2001-10-30 | 2007-07-04 | 钟渊化学工业株式会社 | 感光性树脂组合物、使用该组合物的感光性薄膜及层压体 |
US20030217462A1 (en) * | 2001-12-13 | 2003-11-27 | Fei Wang | Method for improving electromigration performance of metallization features through multiple depositions of binary alloys |
US7153754B2 (en) * | 2002-08-29 | 2006-12-26 | Micron Technology, Inc. | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same |
GB0221893D0 (en) * | 2002-09-20 | 2002-10-30 | Avecia Ltd | Process |
US6844950B2 (en) | 2003-01-07 | 2005-01-18 | General Electric Company | Microstructure-bearing articles of high refractive index |
DE602004017457D1 (de) * | 2003-05-30 | 2008-12-11 | Fujifilm Imaging Colorants Ltd | Verfahren zum ätzen einer metall- oder metalllegierung oberfläche |
US7012017B2 (en) | 2004-01-29 | 2006-03-14 | 3M Innovative Properties Company | Partially etched dielectric film with conductive features |
US7598167B2 (en) | 2004-08-24 | 2009-10-06 | Micron Technology, Inc. | Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures |
US7335608B2 (en) | 2004-09-22 | 2008-02-26 | Intel Corporation | Materials, structures and methods for microelectronic packaging |
US7442325B2 (en) | 2004-09-29 | 2008-10-28 | Cytec Technology Corp. | Stabilized crosslinking composition |
US8709705B2 (en) * | 2004-12-13 | 2014-04-29 | Pryog, Llc | Metal-containing compositions and method of making same |
WO2006065660A2 (en) * | 2004-12-13 | 2006-06-22 | Hybrid Plastics, Inc. | Metal-containing compositions |
US7410631B2 (en) | 2005-03-02 | 2008-08-12 | Aps Laboratory | Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom |
US7745516B2 (en) | 2005-10-12 | 2010-06-29 | E. I. Du Pont De Nemours And Company | Composition of polyimide and sterically-hindered hydrophobic epoxy |
US7629424B2 (en) | 2005-12-09 | 2009-12-08 | Pryog, Llc | Metal-containing compositions and method of making same |
US7682972B2 (en) * | 2006-06-01 | 2010-03-23 | Amitec-Advanced Multilayer Interconnect Technoloiges Ltd. | Advanced multilayer coreless support structures and method for their fabrication |
US8287686B2 (en) | 2006-07-24 | 2012-10-16 | Designer Molecules, Inc. | Derivatives of poly(styrene-co-allyl alcohol) and methods for use thereof |
US7685687B2 (en) * | 2007-01-22 | 2010-03-30 | E. I. Du Pont De Nemours And Company | Methods of making high capacitance density ceramic capacitors |
US8147639B2 (en) * | 2008-05-22 | 2012-04-03 | Tripartisan Technologies, Llc | Process for manufacturing free standing thermoplastic polymeric films |
US20110287243A1 (en) | 2009-03-06 | 2011-11-24 | E.I. Du Pont De Nemours And Company | Multilayer film for electronic circuitry applications and methods relating thereto |
KR20120041238A (ko) | 2009-08-03 | 2012-04-30 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반사방지성 투명 emi 차폐 광학 필터 |
US8710682B2 (en) * | 2009-09-03 | 2014-04-29 | Designer Molecules Inc, Inc. | Materials and methods for stress reduction in semiconductor wafer passivation layers |
TW201114602A (en) * | 2009-10-20 | 2011-05-01 | Toyo Boseki | Transparent electrically conductive laminated film |
US8816021B2 (en) * | 2010-09-10 | 2014-08-26 | Designer Molecules, Inc. | Curable composition with rubber-like properties |
US9136123B2 (en) | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
US20140274470A1 (en) * | 2013-03-14 | 2014-09-18 | Taylor Made Golf Company, Inc. | Golf ball compositions |
US9725621B2 (en) * | 2013-05-03 | 2017-08-08 | Cabot Corporation | Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, CMP polishing pad and process for preparing said composition |
KR102219068B1 (ko) | 2013-05-17 | 2021-02-23 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 새로운 폴리머 및 이를 포함하는 열경화성 조성물 |
SG11201700740QA (en) | 2014-08-29 | 2017-02-27 | Furukawa Electric Co Ltd | Adhesive film |
JP6395730B2 (ja) | 2014-08-29 | 2018-09-26 | 古河電気工業株式会社 | 接着フィルム及び接着フィルムを用いた半導体パッケージ |
US20170369371A1 (en) * | 2014-12-22 | 2017-12-28 | Dow Global Technologies Llc | Derivatized polyimides and methods of making and using |
CN106832280A (zh) | 2017-02-27 | 2017-06-13 | 华烁科技股份有限公司 | 一种热塑性导热液晶聚酰亚胺薄膜及其制备方法 |
-
2018
- 2018-02-28 US US15/907,323 patent/US10875965B2/en active Active
- 2018-02-28 KR KR1020187028209A patent/KR102456361B1/ko active IP Right Grant
- 2018-02-28 CN CN201880001944.7A patent/CN109790405B/zh active Active
- 2018-02-28 EP EP18773067.6A patent/EP3478482B1/en active Active
- 2018-02-28 US US15/907,332 patent/US10563014B2/en active Active
- 2018-02-28 WO PCT/US2018/020102 patent/WO2019050565A1/en active Application Filing
- 2018-02-28 JP JP2018559767A patent/JP7140686B2/ja active Active
- 2018-02-28 KR KR1020187027425A patent/KR102494132B1/ko active IP Right Grant
- 2018-02-28 WO PCT/US2018/020118 patent/WO2019050566A1/en unknown
- 2018-02-28 JP JP2018560516A patent/JP7140687B2/ja active Active
- 2018-02-28 CN CN201880001950.2A patent/CN109789644B/zh active Active
- 2018-02-28 EP EP18773066.8A patent/EP3478777B1/en active Active
- 2018-03-07 TW TW107107682A patent/TWI776863B/zh active
- 2018-03-07 TW TW107107683A patent/TWI766959B/zh active
- 2018-09-18 PH PH12018550157A patent/PH12018550157A1/en unknown
- 2018-09-19 PH PH12018550158A patent/PH12018550158A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090212292A1 (en) | 2005-06-01 | 2009-08-27 | Carl Hayton | Layer-selective laser ablation patterning |
JP2011530652A (ja) | 2008-08-07 | 2011-12-22 | プライオグ リミテッド ライアビリティ カンパニー | 金属組成物及びその製法 |
JP2018517168A (ja) | 2015-04-21 | 2018-06-28 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 感光性ポリイミド組成物 |
JP2018526668A (ja) | 2015-09-29 | 2018-09-13 | プライオグ リミテッド ライアビリティ カンパニーPryog,Llc | 金属組成物及びその製法 |
JP2020533419A (ja) | 2017-09-11 | 2020-11-19 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 誘電フィルム形成用組成物 |
Also Published As
Publication number | Publication date |
---|---|
KR102494132B1 (ko) | 2023-01-31 |
WO2019050565A1 (en) | 2019-03-14 |
JP2020533419A (ja) | 2020-11-19 |
WO2019050566A1 (en) | 2019-03-14 |
TWI776863B (zh) | 2022-09-11 |
KR20200053389A (ko) | 2020-05-18 |
EP3478777A4 (en) | 2019-05-08 |
CN109789644A (zh) | 2019-05-21 |
JP2020533418A (ja) | 2020-11-19 |
TW201912677A (zh) | 2019-04-01 |
US10875965B2 (en) | 2020-12-29 |
KR20200053388A (ko) | 2020-05-18 |
US20190081001A1 (en) | 2019-03-14 |
TW201912717A (zh) | 2019-04-01 |
EP3478482A1 (en) | 2019-05-08 |
EP3478482A4 (en) | 2019-07-17 |
CN109790405A (zh) | 2019-05-21 |
US10563014B2 (en) | 2020-02-18 |
PH12018550157A1 (en) | 2019-09-09 |
EP3478777B1 (en) | 2020-11-18 |
PH12018550158A1 (en) | 2019-09-09 |
EP3478777A1 (en) | 2019-05-08 |
JP7140687B2 (ja) | 2022-09-21 |
TWI766959B (zh) | 2022-06-11 |
US20190077913A1 (en) | 2019-03-14 |
CN109790405B (zh) | 2022-07-15 |
EP3478482B1 (en) | 2020-12-16 |
KR102456361B1 (ko) | 2022-10-19 |
CN109789644B (zh) | 2023-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7140686B2 (ja) | 誘電フィルム形成用組成物 | |
JP6845156B2 (ja) | 感光性ポリイミド組成物 | |
JP6643824B2 (ja) | 感光性樹脂組成物、硬化レリーフパターンの製造方法、並びに半導体装置 | |
JP6898031B2 (ja) | 感光性積層構造体 | |
US11721543B2 (en) | Planarizing process and composition | |
JP2023534494A (ja) | 誘電体膜形成組成物 | |
JP2023511118A (ja) | ドライフィルム | |
CN116635571A (zh) | 介电膜形成组合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220325 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220908 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7140686 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |