JP6693353B2 - 原子発振器および電子機器 - Google Patents
原子発振器および電子機器 Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
-
- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
- G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B17/00—Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ecology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Description
本発明の原子発振器は、アルカリ金属が封入されている原子セルと、
前記原子セルに照射する光を出射する発光素子と、
前記原子セルを透過した光を検出する受光素子と、
前記原子セルと前記発光素子との間に配置されている光透過性の第1光学素子と、
前記第1光学素子と前記原子セルとの間に配置されている光透過性の第2光学素子と、を備え、
前記第1光学素子は、前記発光素子からの光を、前記発光素子側に向けて前記光の光軸に対して傾斜した第1方向に反射させ、
前記第2光学素子は、前記発光素子からの光を、前記発光素子側に向けて前記光の光軸に対して前記第1方向とは異なる方向に傾斜した第2方向に反射させることを特徴とする。
前記原子セルに照射する光を出射する発光素子と、
前記原子セルを透過した光を検出する受光素子と、
前記原子セルと前記発光素子との間に配置され、前記光の光軸を法線とする面に対して傾斜した第1面を有し、前記第1面が前記発光素子からの光を反射させる光透過性の第1光学素子と、
前記第1光学素子と前記原子セルとの間に配置され、前記光の光軸を法線とする面に対して前記第1面とは異なる方向に傾斜した第2面を有し、前記第2面が前記発光素子からの光を反射させる光透過性の第2光学素子と、を備えることを特徴とする。
前記第1係合部に係合している第2係合部を有し、前記第2光学素子を保持している第2保持部材と、を備え、
前記第1係合部および前記第2係合部の係合により前記第1保持部材および前記第2保持部材の相対的な位置決めがなされていることが好ましい。
前記第1光学素子および前記第1保持部材が前記パッケージの少なくとも一部を構成していることが好ましい。
このような電子機器によれば、原子発振器の優れた発振特性を利用して、電子機器の特性を向上させることができる。
まず、本発明の原子発振器について説明する。
図1に示す原子発振器10は、アルカリ金属原子に対して特定の異なる波長の2つの共鳴光を同時に照射したときに当該2つの共鳴光がアルカリ金属原子に吸収されずに透過する現象が生じる量子干渉効果(CPT:Coherent Population Trapping)を利用した原子発振器である。なお、この量子干渉効果による現象は、電磁誘起透明化(EIT:Electromagnetically Induced Transparency)現象とも言う。
図4は、図2および図3に示す原子発振器が備える発光素子モジュールの断面図である。図5は、図4に示す発光素子モジュールの平面図である。図6は、図4に示す発光素子モジュールが備えるリッドの平面図である。図7は、図2に示す原子発振器が備える第1光学素子および第2光学素子を説明するための模式図である。図8は、第1光学素子および第2光学素子を平行に配置した場合を説明するための模式図である。なお、以下では、説明の便宜上、図4中の上側を「上」、下側を「下」ともいう。
以上説明したような発光素子モジュール1および原子発振器10は、各種電子機器に組み込むことができる。以下、本発明の電子機器について説明する。
基地局装置1300は、例えば電子基準点(GPS連続観測局)に設置されたアンテナ1301を介してGPS衛星1200からの測位情報を高精度に受信する受信装置1302と、この受信装置1302で受信した測位情報をアンテナ1303を介して送信する送信装置1304とを備える。
図10は、本発明の移動体の一例を示す図である。
Claims (8)
- アルカリ金属が封入されている原子セルと、
前記原子セルに照射する光を出射する発光素子と、
前記原子セルを透過した光を検出する受光素子と、
前記原子セルと前記発光素子との間に配置され、前記光の光軸を法線とする面に対して傾斜した第1面を有し、前記第1面が前記発光素子からの光を反射させる光透過性の第1光学素子と、
前記第1光学素子と前記原子セルとの間に配置され、前記光の光軸を法線とする面に対して前記第1面とは異なる方向に傾斜した第2面を有し、前記第2面が前記発光素子からの光を反射させる光透過性の第2光学素子と、を備えることを特徴とする原子発振器。 - 前記光の光軸を法線とする面に対する前記第2面の傾斜角度は、前記光の光軸を法線とする面に対する前記第1面の傾斜角度よりも大きい請求項1に記載の原子発振器。
- 前記第2光学素子は、反射型の減光フィルターである請求項1または2に記載の原子発振器。
- 前記原子セルと前記第2光学素子との間に配置されている1/4波長板を備える請求項1ないし3のいずれか1項に記載の原子発振器。
- 第1係合部を有し、前記第1光学素子を保持している第1保持部材と、
前記第1係合部に係合している第2係合部を有し、前記第2光学素子を保持している第2保持部材と、を備え、
前記第1係合部および前記第2係合部の係合により前記第1保持部材および前記第2保持部材の相対的な位置決めがなされている請求項1ないし4のいずれか1項に記載の原子発振器。 - 前記発光素子を収納しているパッケージを備え、
前記第1光学素子および前記第1保持部材が前記パッケージの少なくとも一部を構成している請求項5に記載の原子発振器。 - 前記第2光学素子の反射率は、前記第1光学素子の反射率よりも高い請求項1ないし6のいずれか1項に記載の原子発振器。
- 請求項1ないし7のいずれか1項に記載の原子発振器を備えることを特徴とする電子機器。
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