JP6691180B2 - 固体パルス変調器における保護回路、発振補償回路および給電回路 - Google Patents
固体パルス変調器における保護回路、発振補償回路および給電回路 Download PDFInfo
- Publication number
- JP6691180B2 JP6691180B2 JP2018152248A JP2018152248A JP6691180B2 JP 6691180 B2 JP6691180 B2 JP 6691180B2 JP 2018152248 A JP2018152248 A JP 2018152248A JP 2018152248 A JP2018152248 A JP 2018152248A JP 6691180 B2 JP6691180 B2 JP 6691180B2
- Authority
- JP
- Japan
- Prior art keywords
- igbt
- gate
- circuit
- voltage
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010355 oscillation Effects 0.000 title description 32
- 230000001052 transient effect Effects 0.000 claims description 3
- 230000002457 bidirectional effect Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 48
- 239000003990 capacitor Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 13
- 230000001629 suppression Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000006698 induction Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Dc-Dc Converters (AREA)
Description
201 レギュレータデバイス
301 駆動信号発生器
302 増幅段
303 発振補償回路
401 コレクタ電圧検出回路
402 過電流トリガー回路
403 ゲート
404 駆動回路
405 抵抗
406 ダイオード
407 レギュレータダイオード
408 抵抗
501 コレクタ電圧検出回路
502 過電圧トリガー回路
503 駆動回路
601 相互誘導コイル
602 ブリッジ整流器
603 レギュレータダイオード
1001 コンデンサ
1002 絶縁ゲート型バイポーラトランジスタ
1003 ダイオード
1004 コンデンサ
2001 レギュレータダイオード
2002 抵抗
3031 発振抑制抵抗
3032 発振抑制容量
3033 抵抗
3034 ダイオード
Claims (5)
- MARX発生器原理による固体パルス変調器におけるスイッチングデバイスとして用いられる絶縁ゲート型バイポーラトランジスタIGBTに用いられるゲート保護回路であって、
前記IGBTのゲートに接続するグランドに対して、前記IGBTのエミッタに安定な電圧を提供するためのレギュレータデバイスを含み、
前記レギュレータデバイスは、レギュレータダイオードであり、
前記レギュレータダイオードのカソードは、前記IGBTのエミッタに接続されており、且つ、前記レギュレータダイオードのアノードは、前記IGBTのゲートに接続するグランドに接続されており、
前記ゲートと前記エミッタとの間に接続される両方向トランジェントボルテージサプレッサーTVPダイオードをさらに含む、
ゲート保護回路。 - 前記レギュレータダイオードは、その両端に5Vである安定な電圧が供給される、
請求項1に記載のゲート保護回路。 - 前記ゲートと前記エミッタとの間に接続される抵抗をさらに含む、
請求項1に記載のゲート保護回路。 - 前記TVPダイオードは、その両端に15Vである安定な電圧が供給される、
請求項1〜3のいずれか一項に記載のゲート保護回路。 - MARX発生器原理による固体パルス変調器であって、
請求項1〜4のいずれか一項に記載のゲート保護回路を含む、
固体パルス変調器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710858572.7 | 2017-09-20 | ||
CN201710858572.7A CN107835002B (zh) | 2017-09-20 | 2017-09-20 | 固态脉冲调制器中的保护电路、振荡补偿电路和供电电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019058056A JP2019058056A (ja) | 2019-04-11 |
JP6691180B2 true JP6691180B2 (ja) | 2020-04-28 |
Family
ID=61643960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018152248A Active JP6691180B2 (ja) | 2017-09-20 | 2018-08-13 | 固体パルス変調器における保護回路、発振補償回路および給電回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11152932B2 (ja) |
EP (1) | EP3461006B1 (ja) |
JP (1) | JP6691180B2 (ja) |
KR (1) | KR102091693B1 (ja) |
CN (1) | CN107835002B (ja) |
AU (1) | AU2018220119B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018221518A1 (de) * | 2018-12-12 | 2020-06-18 | Siemens Healthcare Gmbh | Hochspannungsgenerator zum Bereitstellen eines Hochspannungsimpulses |
CN109581179A (zh) * | 2018-12-24 | 2019-04-05 | 天津城建大学 | 一种绝缘栅双极晶体管结温测量方法 |
JP7253739B2 (ja) * | 2019-08-23 | 2023-04-07 | 株式会社デンソー | マルクス回路 |
CN110597095A (zh) * | 2019-09-24 | 2019-12-20 | 广州华工科技开发有限公司 | 一种基于igbt的控制器 |
CN112731548B (zh) * | 2021-01-18 | 2023-08-29 | 厦门汉印电子技术有限公司 | 光电对控制方法、装置、设备以及可读存储介质 |
CN113030787A (zh) * | 2021-03-15 | 2021-06-25 | 南京朗驰瑞泰电子信息技术有限公司 | 一种高压固态刚管调制器在线检测方法 |
CN115468632B (zh) * | 2022-10-19 | 2023-10-20 | 佛山市汉立电子科技有限公司 | 缺液检测装置、方法及雾化器 |
CN115967374B (zh) * | 2022-12-19 | 2023-09-19 | 重庆大学 | 一种基于全固态开关混联的高压脉冲发生装置 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH027714A (ja) * | 1988-06-27 | 1990-01-11 | Hitachi Ltd | 異常電流時の素子の保護装置 |
JPH0479758A (ja) * | 1990-07-19 | 1992-03-13 | Fuji Electric Co Ltd | 電流センスigbtの駆動回路 |
EP0489945B1 (de) * | 1990-12-08 | 2003-01-29 | ABB Schweiz AG | Schaltanordnung für einen HF-GTO |
JP3032745B2 (ja) * | 1992-09-04 | 2000-04-17 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP3139223B2 (ja) * | 1992-11-26 | 2001-02-26 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JPH07111446A (ja) * | 1993-10-14 | 1995-04-25 | Hitachi Ltd | 電圧駆動型半導体素子のゲート駆動装置 |
JP3373704B2 (ja) * | 1995-08-25 | 2003-02-04 | 三菱電機株式会社 | 絶縁ゲートトランジスタ駆動回路 |
JP3560274B2 (ja) * | 1997-09-19 | 2004-09-02 | オリジン電気株式会社 | 電界制御型半導体素子の駆動方法及び回路 |
JP2000152617A (ja) * | 1998-11-10 | 2000-05-30 | Sony Corp | スイッチング電源回路 |
JP4449190B2 (ja) * | 1999-08-10 | 2010-04-14 | 富士電機システムズ株式会社 | 電圧駆動型半導体素子のゲート駆動装置 |
JP2002208847A (ja) * | 2001-01-12 | 2002-07-26 | Fuji Electric Co Ltd | 電力用半導体素子のゲート駆動回路 |
JP3791393B2 (ja) | 2001-10-23 | 2006-06-28 | 富士電機デバイステクノロジー株式会社 | インバータ回路 |
JP2005032736A (ja) * | 2002-06-10 | 2005-02-03 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
KR100539401B1 (ko) | 2003-07-25 | 2005-12-27 | 재단법인서울대학교산학협력재단 | 절연게이트형 전력소자의 단락상태 유지를 위한 보호회로 |
JP2005287182A (ja) * | 2004-03-30 | 2005-10-13 | Yaskawa Electric Corp | 電圧駆動型半導体素子のゲート駆動回路 |
FR2874767B1 (fr) * | 2004-08-27 | 2006-10-20 | Schneider Toshiba Inverter | Dispositif de commande d'un transistor de puissance |
US7855904B2 (en) * | 2005-03-17 | 2010-12-21 | Los Alamos National Security, Llc | Apparatus for producing voltage and current pulses |
JP4727360B2 (ja) * | 2005-09-20 | 2011-07-20 | 東芝三菱電機産業システム株式会社 | 絶縁ゲート型半導体素子のゲート回路 |
JP4432953B2 (ja) * | 2006-09-27 | 2010-03-17 | 株式会社日立製作所 | 半導体電力変換装置 |
JP2008154371A (ja) * | 2006-12-18 | 2008-07-03 | Toyota Motor Corp | 車両の駆動装置、車両の駆動装置の制御方法、車両の駆動装置の制御方法をコンピュータに実行させるためのプログラムおよびそのプログラムをコンピュータ読取り可能に記録した記録媒体 |
US7508096B1 (en) * | 2007-09-20 | 2009-03-24 | General Electric Company | Switching circuit apparatus having a series conduction path for servicing a load and switching method |
US8770496B2 (en) * | 2008-03-10 | 2014-07-08 | Finishing Brands Holdings Inc. | Circuit for displaying the relative voltage at the output electrode of an electrostatically aided coating material atomizer |
JP2009253484A (ja) * | 2008-04-03 | 2009-10-29 | Fuji Electric Systems Co Ltd | 電力変換装置 |
KR101217357B1 (ko) | 2008-08-21 | 2012-12-31 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 소자의 구동 회로 |
JP5394975B2 (ja) * | 2010-04-21 | 2014-01-22 | 住友重機械工業株式会社 | スイッチングトランジスタの制御回路およびそれを用いた電力変換装置 |
DE102010038731B3 (de) * | 2010-07-30 | 2011-12-08 | Semikron Elektronik Gmbh & Co. Kg | Submodul und Leistungshalbleitermodul |
JP5556584B2 (ja) | 2010-10-26 | 2014-07-23 | トヨタ自動車株式会社 | インバータ駆動装置 |
US8400739B2 (en) * | 2011-02-28 | 2013-03-19 | General Electric Company | System and method for operating inverters |
CN103036415B (zh) * | 2011-09-29 | 2015-07-08 | 台达电子企业管理(上海)有限公司 | 一种功率半导体开关串联电路及其控制方法 |
CN102545687A (zh) * | 2011-12-31 | 2012-07-04 | 同方威视技术股份有限公司 | 用于电压交替脉冲输出的设备和方法 |
US9531441B2 (en) * | 2012-02-21 | 2016-12-27 | Lg Innotek Co., Ltd. | Wireless power receiver and method of managing power thereof |
JP5500192B2 (ja) * | 2012-03-16 | 2014-05-21 | 株式会社デンソー | スイッチング素子の駆動回路 |
WO2013153510A1 (en) * | 2012-04-12 | 2013-10-17 | Koninklijke Philips N.V. | Digital communication interface circuit for line-pair with individually adjustable transition edges |
CN103427809B (zh) * | 2012-05-21 | 2016-04-20 | 永济新时速电机电器有限责任公司 | 绝缘栅双极型晶体管的保护电路 |
JP6015615B2 (ja) | 2013-10-01 | 2016-10-26 | 三菱電機株式会社 | 半導体装置 |
JP6156073B2 (ja) | 2013-11-08 | 2017-07-05 | 株式会社明電舎 | 半導体スイッチング素子の保護回路および電力変換装置 |
JP2015115976A (ja) * | 2013-12-09 | 2015-06-22 | 東芝三菱電機産業システム株式会社 | ゲート駆動回路 |
KR102155031B1 (ko) * | 2013-12-30 | 2020-09-11 | 삼성전자주식회사 | 전원 공급 장치 및 그에 포함되는 게이트 드라이버 |
CN104378097B (zh) * | 2014-09-29 | 2018-06-12 | 株洲变流技术国家工程研究中心有限公司 | 一种绝缘栅双极型晶体管的驱动***及方法 |
JP6252561B2 (ja) | 2015-07-28 | 2017-12-27 | トヨタ自動車株式会社 | 電気回路 |
KR102276588B1 (ko) * | 2015-08-25 | 2021-07-13 | 한국전자기술연구원 | 기준전압 가변형 igbt 구동회로 |
US9787303B2 (en) * | 2015-12-03 | 2017-10-10 | General Electric Company | Driver circuit and switch driving method |
CN205847212U (zh) * | 2016-07-08 | 2016-12-28 | 上海众联能创新能源科技股份有限公司 | 一种高可靠性的igbt驱动电路 |
CN207475519U (zh) * | 2017-09-20 | 2018-06-08 | 同方威视技术股份有限公司 | 固态脉冲调制器中的保护电路、振荡补偿电路和供电电路 |
CN110768649B (zh) * | 2018-07-26 | 2023-03-24 | 台达电子工业股份有限公司 | 功率半导体开关的门极电路及门极驱动电路 |
-
2017
- 2017-09-20 CN CN201710858572.7A patent/CN107835002B/zh active Active
-
2018
- 2018-08-13 JP JP2018152248A patent/JP6691180B2/ja active Active
- 2018-08-16 KR KR1020180095406A patent/KR102091693B1/ko active IP Right Grant
- 2018-08-23 US US16/110,355 patent/US11152932B2/en active Active
- 2018-08-24 AU AU2018220119A patent/AU2018220119B2/en active Active
- 2018-08-24 EP EP18190829.4A patent/EP3461006B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190089344A1 (en) | 2019-03-21 |
KR20190032998A (ko) | 2019-03-28 |
AU2018220119A1 (en) | 2019-04-04 |
KR102091693B1 (ko) | 2020-03-23 |
JP2019058056A (ja) | 2019-04-11 |
AU2018220119B2 (en) | 2020-07-23 |
US11152932B2 (en) | 2021-10-19 |
CN107835002A (zh) | 2018-03-23 |
EP3461006A2 (en) | 2019-03-27 |
EP3461006B1 (en) | 2022-05-04 |
CN107835002B (zh) | 2024-03-12 |
EP3461006A3 (en) | 2019-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6691180B2 (ja) | 固体パルス変調器における保護回路、発振補償回路および給電回路 | |
JP6402591B2 (ja) | 半導体装置 | |
JP5747445B2 (ja) | ゲート駆動装置 | |
TWI448029B (zh) | A system and method for protecting a power conversion system under open circuit and / or short circuit conditions | |
US9035681B2 (en) | Switch controller, switch control method, and power supply device comprising the switch controller | |
US8537515B2 (en) | Driving circuit and semiconductor device with the driving circuit | |
CN108809059B (zh) | 半导体元件的驱动装置 | |
US20040027762A1 (en) | Drive circuit for driving power semiconductor device | |
US20120229942A1 (en) | Gate circuit | |
US6687106B1 (en) | Power module | |
JP6350214B2 (ja) | 駆動装置 | |
US20150340951A1 (en) | Boost converter and power controling method thereof | |
US11139812B2 (en) | IGBT emitter current sensing for early desaturation detection and short circuit protection | |
JP7037538B2 (ja) | ゲート駆動回路 | |
JP4727360B2 (ja) | 絶縁ゲート型半導体素子のゲート回路 | |
JP6622405B2 (ja) | インバータ駆動装置 | |
JP2004140891A (ja) | 電力変換装置 | |
JP6068310B2 (ja) | 異常検出保護回路および異常検出保護回路の制御方法 | |
JP7279502B2 (ja) | スイッチング回路とゲート駆動回路 | |
US20190018056A1 (en) | Device characteristics measuring circuit and device characteristics measuring method | |
JP2004077166A (ja) | 試験装置 | |
JP2009077180A (ja) | 検出装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180813 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190729 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190926 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200302 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200316 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200409 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6691180 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |