JP5556584B2 - インバータ駆動装置 - Google Patents
インバータ駆動装置 Download PDFInfo
- Publication number
- JP5556584B2 JP5556584B2 JP2010239221A JP2010239221A JP5556584B2 JP 5556584 B2 JP5556584 B2 JP 5556584B2 JP 2010239221 A JP2010239221 A JP 2010239221A JP 2010239221 A JP2010239221 A JP 2010239221A JP 5556584 B2 JP5556584 B2 JP 5556584B2
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- Prior art keywords
- circuit
- signal
- dead time
- upper arm
- arm circuit
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 15
- 230000008054 signal transmission Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000004804 winding Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Description
入力信号を互いに相補する2つの波形信号に変換する変換回路と、
第1の半導体スイッチング素子に駆動信号を伝達する下アーム回路と、
第2の半導体スイッチング素子に駆動信号を伝達する上アーム回路と、
前記下アーム回路と前記上アーム回路に給電を行うトランスとを備え、
前記2つの波形信号が、バイフェーズ符号化された信号であって、
前記トランスが、前記2つの波形信号のうち、一方の波形信号を前記下アーム回路に伝達し、他方の波形信号を前記上アーム回路に伝達し、
前記下アーム回路と前記上アーム回路のそれぞれが、
バイフェーズ符号化された信号を復号する復号手段と、
復号した信号に、バイフェーズ符号化された信号に含まれるクロック成分を利用してデッドタイムを付与するデッドタイム付与手段とを備える、ことを特徴とするものである。
11A,11B フォトカプラ
17A,47A 下アーム素子(半導体スイッチング素子)
17B,47B 上アーム素子(半導体スイッチング素子)
19A,19B 駆動回路
31 マイコン
32 符号化IC
33 バイフェーズ符号化回路33
36 トランス
49A,49B 駆動IC
50 デッドタイム生成回路
61,62 Dフリッププロップ
70 駆動回路部
80 モータ
100,200 インバータ駆動装置
300 モータ駆動装置
S1 PWM信号
S2A,S2B,S3A,S3B,S4A,S4B バイフェーズ符号化信号
S7A,S7B ゲート信号
Claims (1)
- 入力信号を互いに相補する2つの波形信号に変換する変換回路と、
第1の半導体スイッチング素子に駆動信号を伝達する下アーム回路と、
第2の半導体スイッチング素子に駆動信号を伝達する上アーム回路と、
前記下アーム回路と前記上アーム回路に給電を行うトランスとを備え、
前記2つの波形信号が、バイフェーズ符号化された信号であって、
前記トランスが、前記2つの波形信号のうち、一方の波形信号を前記下アーム回路に伝達し、他方の波形信号を前記上アーム回路に伝達し、
前記下アーム回路と前記上アーム回路のそれぞれが、
バイフェーズ符号化された信号を復号する復号手段と、
復号した信号に、バイフェーズ符号化された信号に含まれるクロック成分を利用してデッドタイムを付与するデッドタイム付与手段とを備える、インバータ駆動装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010239221A JP5556584B2 (ja) | 2010-10-26 | 2010-10-26 | インバータ駆動装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010239221A JP5556584B2 (ja) | 2010-10-26 | 2010-10-26 | インバータ駆動装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012095409A JP2012095409A (ja) | 2012-05-17 |
JP5556584B2 true JP5556584B2 (ja) | 2014-07-23 |
Family
ID=46388154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010239221A Expired - Fee Related JP5556584B2 (ja) | 2010-10-26 | 2010-10-26 | インバータ駆動装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5556584B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4236074A1 (en) * | 2022-02-23 | 2023-08-30 | Hamilton Sundstrand Corporation | Parasitic immune isolated drive |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6565789B2 (ja) * | 2016-05-19 | 2019-08-28 | 三菱電機株式会社 | 半導体装置 |
DE102016223258A1 (de) * | 2016-11-24 | 2018-05-24 | Siemens Aktiengesellschaft | Ansteueranordnung für spannungsgesteuerte Schaltelemente |
CN107835002B (zh) * | 2017-09-20 | 2024-03-12 | 同方威视技术股份有限公司 | 固态脉冲调制器中的保护电路、振荡补偿电路和供电电路 |
FR3078846B1 (fr) | 2018-03-08 | 2021-02-19 | Ifp Energies Now | Alimentation isolee a masse flottante pour convertisseur electronique |
JP6849148B2 (ja) * | 2018-04-04 | 2021-03-24 | 三菱電機株式会社 | 半導体駆動装置および電力変換装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3778493B2 (ja) * | 2001-09-28 | 2006-05-24 | デンヨー株式会社 | インバータ制御エンジン駆動発電機 |
JP5228384B2 (ja) * | 2007-07-04 | 2013-07-03 | 日産自動車株式会社 | 電力変換装置 |
JP2009044837A (ja) * | 2007-08-08 | 2009-02-26 | Yokogawa Electric Corp | 絶縁型スイッチング電源装置 |
JP5029900B2 (ja) * | 2007-11-20 | 2012-09-19 | アイシン・エィ・ダブリュ株式会社 | モータの制御装置 |
-
2010
- 2010-10-26 JP JP2010239221A patent/JP5556584B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4236074A1 (en) * | 2022-02-23 | 2023-08-30 | Hamilton Sundstrand Corporation | Parasitic immune isolated drive |
US11990898B2 (en) | 2022-02-23 | 2024-05-21 | Hamilton Sundstrand Corporation | Parasitic immune isolated drive |
Also Published As
Publication number | Publication date |
---|---|
JP2012095409A (ja) | 2012-05-17 |
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