JP6665157B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- JP6665157B2 JP6665157B2 JP2017506045A JP2017506045A JP6665157B2 JP 6665157 B2 JP6665157 B2 JP 6665157B2 JP 2017506045 A JP2017506045 A JP 2017506045A JP 2017506045 A JP2017506045 A JP 2017506045A JP 6665157 B2 JP6665157 B2 JP 6665157B2
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- nitride semiconductor
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- semiconductor layer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 167
- 150000004767 nitrides Chemical class 0.000 title claims description 159
- 239000000758 substrate Substances 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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Description
本発明者は、「背景技術」の欄において記載した従来の半導体装置に関し、以下の問題が生じることを見出した。
[1.窒化物半導体装置の断面構成]
図1は、実施形態に係る窒化物半導体装置の断面図である。図1に示すように、本実施形態に係る窒化物半導体装置1は、基板100と、ドリフト層102と、下地層104と、ブロック層106と、下地層108と、チャネル形成層112と、ゲート電極118と、ソース電極124と、ドレイン電極126とを備える。また、窒化物半導体装置1には、下地層108と、ブロック層106と、下地層104とを貫通して、ドリフト層102に到達するゲート開口部110(第1の開口部)が形成されている。なお、本実施形態において、開口部とは、基板面方向に層形成された所定層が一部削除された領域であって、当該領域の少なくとも一部領域が当該基板面方向に当該所定層で囲まれた領域である。また、開口部は、窒化物半導体装置の形成過程では空間を有しているが、形成完了時には他層で充填されている。例えば、ゲート開口部110は下地層104に形成され、窒化物半導体装置1の形成完了時には、ゲート開口部110、はチャネル形成層112およびゲート電極118で充填されている。
図4Aは、実施形態に係る窒化物半導体装置の平面図および断面図である。また、図4Bは、実施形態に係る窒化物半導体装置の第2および第3の開口部の平面レイアウトの例を示す図である。
図6は、実施形態の変形例2に係る窒化物半導体装置の断面図である。本変形例に係る窒化物半導体装置2は、窒化物半導体装置1と比較して、さらに窒化物半導体層600を備える点が構成として異なる。以下、窒化物半導体装置1と同じ構成は説明を省略し、窒化物半導体装置1と異なる構成を中心に説明する。
図7は、本実施形態の変形例3に係る窒化物半導体装置の断面図である。本変形例に係る窒化物半導体装置3は、窒化物半導体装置1と比較して、ソース電極の構成が異なる。以下、窒化物半導体装置1と同じ構成は説明を省略し、窒化物半導体装置1と異なる構成を中心に説明する。
ここで、ゲート端の位置とトランジスタの閾値電圧との関係について説明する。なお、ゲート端とは、窒化物半導体装置1および3では、ゲート電極118とソース電極124との並び方向におけるゲート電極118の端部である。また、窒化物半導体装置2では、ゲート端とは、ゲート電極118とソース電極124との並び方向における窒化物半導体層600の端部である。
一般的に、縦型デバイスにおけるGaNの結晶成長は、GaN結晶のc面が基板主面(上面)と平行になるように行われる。この場合、基板主面と平行な2次元電子ガスに比べて、基板主面から傾いた2次元電子ガスの分極は小さくなるため、その分キャリア濃度が低下する。
なお、本発明に係る窒化物半導体装置は、上記実施形態およびその変形例1〜3に限定されるものではない。上記実施形態および変形例における任意の構成要素を組み合わせて実現される別の実施形態や、上記実施形態および変形例に対して本発明の趣旨を逸脱しない範囲で当業者が思いつく各種変形を施して得られる変形例や、上記実施形態および変形例に係る窒化物半導体装置を内蔵した各種機器も本発明に含まれる。
100 基板
102 ドリフト層
104、108 下地層
106 ブロック層
110 ゲート開口部
111、121、123 側壁部
112、612 チャネル形成層
118 ゲート電極
120、122 開口部
124、700 ソース電極
126 ドレイン電極
130 側壁部2DEG
132 平坦部2DEG
600 窒化物半導体層
702、704 金属層
Claims (9)
- 互いに背向する第1主面および第2主面を有する基板と、
前記第1主面の上に配置された第1導電型の第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に配置された第2導電型の第2の窒化物半導体層と、
前記第2の窒化物半導体層に形成され、前記第1の窒化物半導体層に達する第1の開口部と、
前記第1の開口部を覆い、チャネル領域を有する、前記第1導電型の第3の窒化物半導体層と、
前記第1の開口部内の前記第3の窒化物半導体層上に配置されたゲート電極と、
前記ゲート電極と離間し、前記第2の窒化物半導体層に達する第2の開口部と、
前記第2の開口部の底面の一部に形成され、前記第1の窒化物半導体層に達する第3の開口部と、
前記第2の開口部および前記第3の開口部を覆うソース電極と、
前記第2主面に配置されたドレイン電極と、を備え、
前記第2の開口部の前記底面の他部は、前記第2の窒化物半導体層と接している、
窒化物半導体装置。 - 前記窒化物半導体装置は、1つの前記第2の開口部に対して離散的に配置された複数の前記第3の開口部を備える
請求項1に記載の窒化物半導体装置。 - 互いに背向する第1主面および第2主面を有する基板と、
前記第1主面の上に配置された第1導電型の第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に配置された第2導電型の第2の窒化物半導体層と、
前記第2の窒化物半導体層に形成され、前記第1の窒化物半導体層に達する第1の開口部と、
前記第1の開口部を覆い、チャネル領域を有する、前記第1導電型の第3の窒化物半導体層と、
前記第1の開口部内の前記第3の窒化物半導体層上に配置されたゲート電極と、
前記ゲート電極と離間し、前記第2の窒化物半導体層に達する第2の開口部と、
前記第2の開口部の底面に形成され、前記第1の窒化物半導体層に達する第3の開口部と、
前記第2の開口部および前記第3の開口部を覆うソース電極と、
前記第2主面に配置されたドレイン電極と、を備え、
前記ドレイン電極と前記ソース電極との間に逆バイアスが印加されているとき、前記第2の開口部の下方において、前記第1の窒化物半導体層と前記第2の窒化物半導体層とによって形成された空乏層が、前記第3の開口部の底面全体に広がる
窒化物半導体装置。 - 前記第3の窒化物半導体層は、
窒化物半導体からなる電子走行層と、
前記電子走行層よりバンドギャップが大きい、窒化物半導体からなる電子供給層と、を有する
請求項1から3のいずれか1項に記載の窒化物半導体装置。 - 前記電子供給層は、前記電子走行層の上に配置されている
請求項4に記載の窒化物半導体装置。 - 互いに背向する第1主面および第2主面を有する基板と、
前記第1主面の上に配置された第1導電型の第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に配置された第2導電型の第2の窒化物半導体層と、
前記第2の窒化物半導体層に形成され、前記第1の窒化物半導体層に達する第1の開口部と、
前記第1の開口部を覆い、チャネル領域を有する、前記第1導電型の第3の窒化物半導体層と、
前記第1の開口部内の前記第3の窒化物半導体層上に配置されたゲート電極と、
前記ゲート電極と離間し、前記第2の窒化物半導体層に達する第2の開口部と、
前記第2の開口部の底面に形成され、前記第1の窒化物半導体層に達する第3の開口部と、
前記第2の開口部および前記第3の開口部を覆うソース電極と、
前記第2主面に配置されたドレイン電極と、を備え、
前記第3の窒化物半導体層は、
窒化物半導体からなる電子走行層と、
前記電子走行層よりバンドギャップが大きい、窒化物半導体からなる電子供給層と、を有し、
前記電子供給層は、前記電子走行層の上に配置されており、
前記基板は、窒化物半導体から構成され、
前記第1主面は、c面であり、
前記第1の開口部の側壁部上に配置された前記電子走行層の膜厚は、前記第1の開口部の外側に配置された前記電子走行層の膜厚よりも大きい
窒化物半導体装置。 - 前記ソース電極は、
前記電子走行層と前記電子供給層との界面に発生する2次元電子ガスに接触する第1の金属層と、
前記第3の開口部において、前記第1の窒化物半導体層及び第2の窒化物半導体層と接触する第2の金属層と、を有する
請求項4から6のいずれか1項に記載の窒化物半導体装置。 - 前記第2の金属層は、前記第2の窒化物半導体層とオーミック接触する
請求項7に記載の窒化物半導体装置。 - さらに、
前記ゲート電極と前記第3の窒化物半導体層との間に配置された前記第2導電型の第4の窒化物半導体層を備える
請求項1から8のいずれか1項に記載の窒化物半導体装置。
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