JP5576731B2 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
- Publication number
- JP5576731B2 JP5576731B2 JP2010160113A JP2010160113A JP5576731B2 JP 5576731 B2 JP5576731 B2 JP 5576731B2 JP 2010160113 A JP2010160113 A JP 2010160113A JP 2010160113 A JP2010160113 A JP 2010160113A JP 5576731 B2 JP5576731 B2 JP 5576731B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- effect transistor
- field effect
- layer
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 claims description 130
- 239000012212 insulator Substances 0.000 claims description 58
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 38
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 11
- 229910004541 SiN Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 description 29
- 230000007423 decrease Effects 0.000 description 22
- 239000000463 material Substances 0.000 description 17
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000002950 deficient Effects 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
例えば、従来のFETにおいては、ゲート電極の幅(ソース−ドレイン間の電流経路の幅)を長くすることにより、ON時の抵抗(ON抵抗)を下げることができる。
また、好ましくは、前記第1の半導体層と前記第2の半導体層との界面の近傍の領域に相当する、前記第1の半導体層の表面部には、2次元電子ガス層が形成され、前記電極は、前記第2の半導体層および前記2次元電子ガス層を貫通するように形成される。
図1は、第1の実施の形態における電界効果トランジスタ100の断面構造を示す図である。電界効果トランジスタ100は、ヘテロジャンクション電界効果トランジスタである。また、電界効果トランジスタ100は、高電子移動度トランジスタ(HEMT)でもある。なお、図1には、電界効果トランジスタ100には含まれない表面保護膜150が示される。なお、表面保護膜150は、電界効果トランジスタ100に含まれても良い。
バッファ層102は、基板101上に形成される。バッファ層102は、AlN(窒化アルミニウム)バッファ、AlNおよびGaNを100周期形成した超格子構造を有する。当該AlNバッファの膜厚は、例えば、300nmである。当該超格子構造1周期中のAlNの膜厚は、例えば、5nmである。当該超格子構造1周期中のGaNの膜厚は、例えば、20nmである。
図2において、横軸は、電界効果トランジスタの素子面積を示し、縦軸は、電界効果トランジスタの歩留りを示す。以下においては、電界効果トランジスタを、FETともいう。
ここで、図6で説明した、従来のFETについて考察する。前述したように、当該従来のFETの第1の半導体層510または第2の半導体層520に、耐電圧低下欠陥が存在する場合、耐電圧低下欠陥と基板との間の耐電圧が低下する。ここで、当該電圧低下欠陥は、一例として、ピットであるとする。
理由Bは、ソース電極長、ドレイン電極長を短くすると、放熱性が悪化し、デバイスの特性が悪化する可能性があるためである。
また、オーミック電極(ソース電極S10、ドレイン電極D10)は、2DEG層111と直接接触する。そのため、当該絶縁体130.1,130.2が形成されていても、オーミック電極(ソース電極S10、ドレイン電極D10)と、2DEG層111とのコンタクト抵抗は影響を受けない。したがってデバイスの静特性には何ら影響を及ぼさない。
図4は、第2の実施の形態における電界効果トランジスタ100Aの断面構造を示す図である。
図5は、第3の実施の形態における電界効果トランジスタ100Bの断面構造を示す図である。
101 基板
102 バッファ層
110 第1の半導体層
120 第2の半導体層
121.1,121.2 開口部
122 領域
130.1,130.2 絶縁体
150 表面保護膜
D10 ドレイン電極
G10 ゲート電極
S10 ソース電極
Claims (6)
- 基板と、
第1の窒化物半導体からなる第1の半導体層と、
前記第1の窒化物半導体よりもバンドギャップの大きい第2の窒化物半導体からなる第2の半導体層と、
ゲート電極およびオーミック電極とを備え、
前記第1の半導体層は、前記基板の上方に形成され、
前記第2の半導体層は、前記第1の半導体層上に形成され、
前記ゲート電極は、前記第2の半導体層の上方に形成され、
前記第1の半導体層と前記第2の半導体層との界面の近傍の領域に相当する、前記第1の半導体層の表面部には、2次元電子ガス層が形成され、
前記第2の半導体層には、該第2の半導体層を貫通して前記第1の半導体層に達する開口部が形成され、
前記開口部の形成により、前記第1の半導体層の上面のうち、上方に前記第2の半導体層が形成されていない部分の少なくとも一部には、絶縁体が形成され、
前記開口部には、前記絶縁体を覆うように前記オーミック電極が形成され、
前記オーミック電極は、前記開口部内において、前記ゲート電極側に形成された前記2次元電子ガス層と接するように形成される
電界効果トランジスタ。 - 前記オーミック電極は、前記第2の半導体層および前記2次元電子ガス層を貫通するように形成される
請求項1に記載の電界効果トランジスタ。 - 前記第1の半導体層および第2の半導体層のうち、前記開口部の内側の表面部に相当する部分には、n型不純物がドーピングされる
請求項1または2に記載の電界効果トランジスタ。 - 前記開口部の内側の表面部に相当する部分は、前記第1の半導体層と前記第2の半導体層との界面の部分を含む
請求項3に記載の電界効果トランジスタ。 - さらに、バッファ層を備え、
前記基板、前記バッファ層および前記第1の半導体層は、この順で積層される
請求項1〜4のいずれかに記載の電界効果トランジスタ。 - 前記絶縁体は、少なくとも、AlN、SiO2、SiN、サファイア、ダイヤモンドおよび絶縁性有機物のいずれかからなる
請求項1〜5のいずれかに記載の電界効果トランジスタ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010160113A JP5576731B2 (ja) | 2010-07-14 | 2010-07-14 | 電界効果トランジスタ |
CN201180033838.5A CN103003930B (zh) | 2010-07-14 | 2011-07-11 | 场效应晶体管 |
PCT/JP2011/003968 WO2012008141A1 (ja) | 2010-07-14 | 2011-07-11 | 電界効果トランジスタ |
US13/727,354 US8659056B2 (en) | 2010-07-14 | 2012-12-26 | Heterojunction field-effect transistor with source electrode and insulator formed in semiconductor layer opening |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010160113A JP5576731B2 (ja) | 2010-07-14 | 2010-07-14 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012023211A JP2012023211A (ja) | 2012-02-02 |
JP5576731B2 true JP5576731B2 (ja) | 2014-08-20 |
Family
ID=45469157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010160113A Expired - Fee Related JP5576731B2 (ja) | 2010-07-14 | 2010-07-14 | 電界効果トランジスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8659056B2 (ja) |
JP (1) | JP5576731B2 (ja) |
CN (1) | CN103003930B (ja) |
WO (1) | WO2012008141A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117294B (zh) * | 2013-02-07 | 2015-11-25 | 苏州晶湛半导体有限公司 | 氮化物高压器件及其制造方法 |
JP6133191B2 (ja) * | 2013-10-18 | 2017-05-24 | 古河電気工業株式会社 | 窒化物半導体装置、ダイオード、および電界効果トランジスタ |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
JP6665157B2 (ja) * | 2015-03-17 | 2020-03-13 | パナソニック株式会社 | 窒化物半導体装置 |
JP6905395B2 (ja) * | 2017-06-16 | 2021-07-21 | 株式会社東芝 | 半導体装置 |
CN108649071B (zh) * | 2018-05-17 | 2019-03-19 | 苏州汉骅半导体有限公司 | 半导体器件及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4043600B2 (ja) * | 1998-06-03 | 2008-02-06 | 古河電気工業株式会社 | ショットキー障壁形成用電極 |
JP2007227409A (ja) * | 2006-01-24 | 2007-09-06 | Oki Electric Ind Co Ltd | 窒化ガリウム系トランジスタとその製造方法 |
JP4705481B2 (ja) * | 2006-01-25 | 2011-06-22 | パナソニック株式会社 | 窒化物半導体装置 |
JP2007329350A (ja) | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP5401758B2 (ja) * | 2006-12-12 | 2014-01-29 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
TW200903858A (en) * | 2007-03-09 | 2009-01-16 | Univ California | Method to fabricate III-N field effect transistors using ion implantation with reduced dopant activation and damage recovery temperature |
JP2009099678A (ja) * | 2007-10-15 | 2009-05-07 | Oki Electric Ind Co Ltd | 窒化物半導体高電子移動度トランジスタ及びその製造方法 |
JP2010098047A (ja) * | 2008-10-15 | 2010-04-30 | Sanken Electric Co Ltd | 窒化物半導体装置 |
-
2010
- 2010-07-14 JP JP2010160113A patent/JP5576731B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-11 CN CN201180033838.5A patent/CN103003930B/zh not_active Expired - Fee Related
- 2011-07-11 WO PCT/JP2011/003968 patent/WO2012008141A1/ja active Application Filing
-
2012
- 2012-12-26 US US13/727,354 patent/US8659056B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN103003930A (zh) | 2013-03-27 |
WO2012008141A1 (ja) | 2012-01-19 |
JP2012023211A (ja) | 2012-02-02 |
US8659056B2 (en) | 2014-02-25 |
CN103003930B (zh) | 2015-12-16 |
US20130126943A1 (en) | 2013-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6476114B2 (ja) | 調整可能な及び高いゲート・ソース定格電圧を備えるiii‐窒化物エンハンスメントモードトランジスタ | |
US10249727B2 (en) | Semiconductor device with silicon nitride film over nitride semiconductor layer and between electrodes | |
JP5668085B2 (ja) | セグメント化ゲートを有するパワートランジスタ | |
JP5654512B2 (ja) | 窒化物半導体装置 | |
JP2007180143A (ja) | 窒化物半導体素子 | |
US10784361B2 (en) | Semiconductor device and method for manufacturing the same | |
JP2009231508A (ja) | 半導体装置 | |
JP5576731B2 (ja) | 電界効果トランジスタ | |
US20150263155A1 (en) | Semiconductor device | |
JP2019117935A (ja) | Iii−窒化物トランジスタレイアウト | |
JP2009026975A (ja) | 半導体装置 | |
US9647102B2 (en) | Field effect transistor | |
JP2011109131A (ja) | 窒化物半導体装置 | |
JP2011142358A (ja) | 窒化物半導体装置 | |
US9331154B2 (en) | High electron mobility transistor | |
JP2010182924A (ja) | トランジスタおよびその製造方法 | |
JP5721782B2 (ja) | 半導体装置 | |
TWI790291B (zh) | 半導體功率元件 | |
JP2007250727A (ja) | 電界効果トランジスタ | |
US20220029006A1 (en) | Semiconductor device | |
JP5697046B2 (ja) | 高移動度電界効果トランジスタ | |
US9054171B2 (en) | HEMT semiconductor device | |
JP2015073111A (ja) | 窒化物半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140527 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140617 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140704 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5576731 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |