JP6383791B2 - ダイのパッケージング品質改善のためのウエハのダイシング方法 - Google Patents
ダイのパッケージング品質改善のためのウエハのダイシング方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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Description
Claims (15)
- 複数の集積回路(IC)を備える半導体ウエハをダイシングする方法であって、
酸化層を有する金属バンプ/パッドを含む前記複数のICを覆うように前記半導体ウエハの上にマスクを形成すること、
レーザスクライビング処理によって、間隙のあるパターニングされたマスクを提供するため、前記IC間の前記半導体ウエハのシリコン基板を露出しながら、前記マスクをパターニングすること、及び
前記複数のICを個片化し前記金属バンプ/パッドから前記酸化層を除去するため、前記パターニングされたマスクの前記間隙を通じて前記半導体ウエハをプラズマエッチングすること、を含む方法。 - 前記半導体ウエハの上に前記マスクを形成することが、前記金属バンプ/パッドの上に1から5μmの厚さを有する前記マスクを堆積させることを含む、請求項1に記載の方法。
- 前記金属バンプ/パッドがスズ合金を含む、請求項1に記載の方法。
- 前記個片化されたICを、第2の金属バンプ/パッドを備える第2の複数のICと互いに前面が向き合うように位置合わせすること、及び
前記金属バンプ/パッドを前記第2の金属バンプ/パッドにフラックスなしで接合するため、圧力を印加すること
をさらに含む、請求項1に記載の方法。 - 前記マスクをパターニングすることが、540ナノメートル以下の波長及び500フェムト秒以下のレーザパルス幅を有するフェムト秒レーザでパターンを直接書き込むことをさらに含む、請求項1に記載の方法。
- 前記複数のICを個片化し前記金属バンプ/パッドから前記酸化層を除去するために、前記パターン化されたマスクの前記間隙を通じて前記半導体ウエハをプラズマエッチングすることが、
前記パターン化されたマスクの前記間隙を通じて前記半導体ウエハを異方性エッチングすることと、
異方性エッチングされたトレンチを等方性エッチングすることと、
前記半導体ウエハの表面上、並びに異方性及び等方性エッチングによって新たに形成された表面上にポリマーを堆積させることと、
を反復することを含む、請求項5に記載の方法。 - 複数の集積回路(IC)を備える基板をダイシングする方法であって、
レーザスクライビング処理によって、前記IC間の前記基板領域を露出するトレンチを形成するために、前記基板上に堆積したマスクをパターニングすることであって、前記マスクがダイシングストリート上では前記複数のICの金属バンプ/パッド上よりも厚い、パターニングすること、及び
前記複数のICを個片化し前記金属バンプ/パッドから酸化層を除去するために、前記基板をプラズマエッチングすること、
を含む方法。 - 前記金属バンプ/パッドの上に、1μmから5μmの厚さを有する前記マスクを形成すること
をさらに含む、請求項7に記載の方法。 - 前記金属バンプ/パッドがスズ合金を含む、請求項7に記載の方法。
- 前記個片化されたICを、第2の金属バンプ/パッドを備える第2の複数のICと互いに前面が向き合うように位置合わせすること、及び
前記金属バンプ/パッドを前記第2の金属バンプ/パッドにフラックスなしで接合するため、圧力を印加すること
をさらに含む、請求項7に記載の方法。 - 前記マスクをパターニングすることが、540ナノメートル以下の波長及び500フェムト秒以下のレーザパルス幅を有するフェムト秒レーザでパターンを直接書き込むことをさらに含む、請求項7に記載の方法。
- 前記複数のICを個片化し前記金属バンプ/パッドから前記酸化層を除去するために、前記基板をプラズマエッチングすることが、
前記基板内の前記トレンチを異方性エッチングすることであって、ポリマー堆積及び方向性照射エッチングを含む、異方性エッチングすること、並びに、
前記異方性エッチングされたトレンチを等方性エッチングすること、
を含む、請求項11に記載の方法。 - 複数の集積回路(IC)を備える基板をダイシングするシステムであって、
酸化層を有する金属バンプ/パッドを有する前記複数のICを覆うように、前記基板上にマスクを適用する堆積モジュール、
前記IC間の前記基板領域を露出するトレンチを形成するために、前記マスクをパターニングするレーザスクライビングモジュール、及び
前記レーザスクライビングモジュールに物理的に結合されたプラズマエッチングモジュールであって、前記基板をエッチングして前記複数のICを個片化し前記金属バンプ/パッドから前記酸化層を除去するためのプラズマエッチングモジュール、
を含む、システム。 - 前記マスクを適用するための前記堆積モジュールが、前記金属バンプ/パッド上に1μmから5μmの厚さを有し、ダイシングストリート上に、前記金属バンプ/パッド上の厚さより厚い第2の厚さを有する、前記マスクを適用する、請求項13に記載のシステム。
- 前記レーザスクライビングモジュールが、540ナノメートル以下の波長及び500フェムト秒以下のパルス幅を有するフェムト秒レーザを備える、請求項13に記載のシステム。
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US14/091,014 US9105710B2 (en) | 2013-08-30 | 2013-11-26 | Wafer dicing method for improving die packaging quality |
PCT/US2014/051523 WO2015031096A1 (en) | 2013-08-30 | 2014-08-18 | Wafer dicing method for improving die packaging quality |
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