JP6264285B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6264285B2 JP6264285B2 JP2014516850A JP2014516850A JP6264285B2 JP 6264285 B2 JP6264285 B2 JP 6264285B2 JP 2014516850 A JP2014516850 A JP 2014516850A JP 2014516850 A JP2014516850 A JP 2014516850A JP 6264285 B2 JP6264285 B2 JP 6264285B2
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Images
Classifications
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Spray Control Apparatus (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Nozzles (AREA)
- Electroluminescent Light Sources (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Special Spraying Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014516850A JP6264285B2 (ja) | 2012-05-24 | 2013-05-23 | 基板処理装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012118617 | 2012-05-24 | ||
JP2012118617 | 2012-05-24 | ||
PCT/JP2013/064381 WO2013176222A1 (ja) | 2012-05-24 | 2013-05-23 | 基板処理装置、及びデバイス製造方法 |
JP2014516850A JP6264285B2 (ja) | 2012-05-24 | 2013-05-23 | 基板処理装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017218647A Division JP6424940B2 (ja) | 2012-05-24 | 2017-11-13 | ミストによる成膜装置 |
JP2017218648A Division JP6428896B2 (ja) | 2012-05-24 | 2017-11-13 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2013176222A1 JPWO2013176222A1 (ja) | 2016-01-14 |
JP6264285B2 true JP6264285B2 (ja) | 2018-01-24 |
Family
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Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
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JP2014516850A Active JP6264285B2 (ja) | 2012-05-24 | 2013-05-23 | 基板処理装置 |
JP2017218647A Active JP6424940B2 (ja) | 2012-05-24 | 2017-11-13 | ミストによる成膜装置 |
JP2017218648A Active JP6428896B2 (ja) | 2012-05-24 | 2017-11-13 | 基板処理方法 |
JP2018199988A Active JP6638792B2 (ja) | 2012-05-24 | 2018-10-24 | ミストによる成膜方法 |
JP2019234591A Pending JP2020074411A (ja) | 2012-05-24 | 2019-12-25 | ミスト成膜装置 |
JP2021173267A Active JP7222416B2 (ja) | 2012-05-24 | 2021-10-22 | デバイス製造装置 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017218647A Active JP6424940B2 (ja) | 2012-05-24 | 2017-11-13 | ミストによる成膜装置 |
JP2017218648A Active JP6428896B2 (ja) | 2012-05-24 | 2017-11-13 | 基板処理方法 |
JP2018199988A Active JP6638792B2 (ja) | 2012-05-24 | 2018-10-24 | ミストによる成膜方法 |
JP2019234591A Pending JP2020074411A (ja) | 2012-05-24 | 2019-12-25 | ミスト成膜装置 |
JP2021173267A Active JP7222416B2 (ja) | 2012-05-24 | 2021-10-22 | デバイス製造装置 |
Country Status (4)
Country | Link |
---|---|
JP (6) | JP6264285B2 (ko) |
KR (5) | KR102057813B1 (ko) |
CN (2) | CN104488071B (ko) |
WO (1) | WO2013176222A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102057813B1 (ko) * | 2012-05-24 | 2019-12-19 | 가부시키가이샤 니콘 | 미스트 성막장치 |
TWI762439B (zh) * | 2015-02-18 | 2022-05-01 | 日商尼康股份有限公司 | 薄膜製造裝置、及薄膜製造方法 |
KR101653347B1 (ko) * | 2015-11-27 | 2016-09-01 | 한국기계연구원 | 유연기판에 코팅용 용액을 코팅하는 장치 |
JP6666779B2 (ja) * | 2016-04-11 | 2020-03-18 | 株式会社小森コーポレーション | 電子デバイス製造装置 |
CN109414718A (zh) * | 2016-07-11 | 2019-03-01 | 东芝三菱电机产业***株式会社 | 雾滴涂布成膜装置及雾滴涂布成膜方法 |
CN106827786B (zh) * | 2017-02-16 | 2019-04-05 | 中国科学技术大学 | 一种非接触式连续辊动装置 |
CN111491746B (zh) | 2017-12-22 | 2022-04-29 | 富士胶片株式会社 | 成膜方法 |
WO2019234917A1 (ja) * | 2018-06-08 | 2019-12-12 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
CN112752616B (zh) | 2018-08-01 | 2023-07-14 | 株式会社尼康 | 雾发生装置以及雾成膜方法和雾成膜装置 |
JP7293955B2 (ja) * | 2019-08-01 | 2023-06-20 | 凸版印刷株式会社 | パターン形成方法およびパターン形成装置 |
CN110588186B (zh) * | 2019-08-07 | 2020-07-10 | 华中科技大学 | 一种喷墨打印柔性显示器件制造***及方法 |
JP7446854B2 (ja) * | 2020-03-02 | 2024-03-11 | 住友重機械工業株式会社 | インク塗布装置、インク塗布装置の制御装置、及びインク塗布方法 |
JP2023100212A (ja) * | 2022-01-05 | 2023-07-18 | 信越化学工業株式会社 | 成膜装置および成膜方法 |
CN217181402U (zh) * | 2022-01-14 | 2022-08-12 | 宁德时代新能源科技股份有限公司 | 一种基材处理的设备 |
WO2023234118A1 (ja) * | 2022-06-03 | 2023-12-07 | 東洋紡株式会社 | 光電変換素子及びその製造方法 |
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JPH0298955A (ja) * | 1988-10-06 | 1990-04-11 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2743566B2 (ja) * | 1990-09-21 | 1998-04-22 | 日立電線株式会社 | エッチングにより微細パターンを形成する方法 |
JP3286002B2 (ja) * | 1993-03-25 | 2002-05-27 | オリンパス光学工業株式会社 | 薄膜形成装置 |
JP3879312B2 (ja) * | 1999-03-31 | 2007-02-14 | セイコーエプソン株式会社 | 膜の形成方法、及びデバイスの製造方法 |
US6304999B1 (en) * | 2000-10-23 | 2001-10-16 | Advanced Micro Devices, Inc. | Method and apparatus for embedded process control framework in tool systems |
JP2002356780A (ja) * | 2001-05-30 | 2002-12-13 | Sekisui Chem Co Ltd | 常圧プラズマ処理法における膜厚制御方法 |
JP2003077782A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2003257866A (ja) * | 2002-03-05 | 2003-09-12 | Nippon Soda Co Ltd | 薄膜パターンの製造方法 |
JP3951044B2 (ja) * | 2002-03-13 | 2007-08-01 | セイコーエプソン株式会社 | 成膜方法、並びにその方法を用いて製造したデバイス |
JP2003290709A (ja) * | 2002-03-29 | 2003-10-14 | Fuji Photo Film Co Ltd | マット形成装置及び平版印刷版の製造方法 |
JP4014142B2 (ja) * | 2002-05-02 | 2007-11-28 | 独立行政法人科学技術振興機構 | 光分解性シランカップリング剤 |
JP2004076076A (ja) * | 2002-08-14 | 2004-03-11 | Konica Minolta Holdings Inc | 大気圧プラズマ処理装置及び大気圧プラズマ処理方法 |
JP4892973B2 (ja) * | 2003-02-18 | 2012-03-07 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ素子の製造方法 |
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