JP6264285B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

Info

Publication number
JP6264285B2
JP6264285B2 JP2014516850A JP2014516850A JP6264285B2 JP 6264285 B2 JP6264285 B2 JP 6264285B2 JP 2014516850 A JP2014516850 A JP 2014516850A JP 2014516850 A JP2014516850 A JP 2014516850A JP 6264285 B2 JP6264285 B2 JP 6264285B2
Authority
JP
Japan
Prior art keywords
substrate
mist
substrate processing
pattern
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014516850A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2013176222A1 (ja
Inventor
圭 奈良
圭 奈良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2014516850A priority Critical patent/JP6264285B2/ja
Publication of JPWO2013176222A1 publication Critical patent/JPWO2013176222A1/ja
Application granted granted Critical
Publication of JP6264285B2 publication Critical patent/JP6264285B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02554Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Spray Control Apparatus (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Nozzles (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Special Spraying Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2014516850A 2012-05-24 2013-05-23 基板処理装置 Active JP6264285B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014516850A JP6264285B2 (ja) 2012-05-24 2013-05-23 基板処理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012118617 2012-05-24
JP2012118617 2012-05-24
PCT/JP2013/064381 WO2013176222A1 (ja) 2012-05-24 2013-05-23 基板処理装置、及びデバイス製造方法
JP2014516850A JP6264285B2 (ja) 2012-05-24 2013-05-23 基板処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2017218647A Division JP6424940B2 (ja) 2012-05-24 2017-11-13 ミストによる成膜装置
JP2017218648A Division JP6428896B2 (ja) 2012-05-24 2017-11-13 基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2013176222A1 JPWO2013176222A1 (ja) 2016-01-14
JP6264285B2 true JP6264285B2 (ja) 2018-01-24

Family

ID=49623903

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2014516850A Active JP6264285B2 (ja) 2012-05-24 2013-05-23 基板処理装置
JP2017218647A Active JP6424940B2 (ja) 2012-05-24 2017-11-13 ミストによる成膜装置
JP2017218648A Active JP6428896B2 (ja) 2012-05-24 2017-11-13 基板処理方法
JP2018199988A Active JP6638792B2 (ja) 2012-05-24 2018-10-24 ミストによる成膜方法
JP2019234591A Pending JP2020074411A (ja) 2012-05-24 2019-12-25 ミスト成膜装置
JP2021173267A Active JP7222416B2 (ja) 2012-05-24 2021-10-22 デバイス製造装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2017218647A Active JP6424940B2 (ja) 2012-05-24 2017-11-13 ミストによる成膜装置
JP2017218648A Active JP6428896B2 (ja) 2012-05-24 2017-11-13 基板処理方法
JP2018199988A Active JP6638792B2 (ja) 2012-05-24 2018-10-24 ミストによる成膜方法
JP2019234591A Pending JP2020074411A (ja) 2012-05-24 2019-12-25 ミスト成膜装置
JP2021173267A Active JP7222416B2 (ja) 2012-05-24 2021-10-22 デバイス製造装置

Country Status (4)

Country Link
JP (6) JP6264285B2 (ko)
KR (5) KR102057813B1 (ko)
CN (2) CN104488071B (ko)
WO (1) WO2013176222A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102057813B1 (ko) * 2012-05-24 2019-12-19 가부시키가이샤 니콘 미스트 성막장치
TWI762439B (zh) * 2015-02-18 2022-05-01 日商尼康股份有限公司 薄膜製造裝置、及薄膜製造方法
KR101653347B1 (ko) * 2015-11-27 2016-09-01 한국기계연구원 유연기판에 코팅용 용액을 코팅하는 장치
JP6666779B2 (ja) * 2016-04-11 2020-03-18 株式会社小森コーポレーション 電子デバイス製造装置
CN109414718A (zh) * 2016-07-11 2019-03-01 东芝三菱电机产业***株式会社 雾滴涂布成膜装置及雾滴涂布成膜方法
CN106827786B (zh) * 2017-02-16 2019-04-05 中国科学技术大学 一种非接触式连续辊动装置
CN111491746B (zh) 2017-12-22 2022-04-29 富士胶片株式会社 成膜方法
WO2019234917A1 (ja) * 2018-06-08 2019-12-12 東芝三菱電機産業システム株式会社 成膜装置
CN112752616B (zh) 2018-08-01 2023-07-14 株式会社尼康 雾发生装置以及雾成膜方法和雾成膜装置
JP7293955B2 (ja) * 2019-08-01 2023-06-20 凸版印刷株式会社 パターン形成方法およびパターン形成装置
CN110588186B (zh) * 2019-08-07 2020-07-10 华中科技大学 一种喷墨打印柔性显示器件制造***及方法
JP7446854B2 (ja) * 2020-03-02 2024-03-11 住友重機械工業株式会社 インク塗布装置、インク塗布装置の制御装置、及びインク塗布方法
JP2023100212A (ja) * 2022-01-05 2023-07-18 信越化学工業株式会社 成膜装置および成膜方法
CN217181402U (zh) * 2022-01-14 2022-08-12 宁德时代新能源科技股份有限公司 一种基材处理的设备
WO2023234118A1 (ja) * 2022-06-03 2023-12-07 東洋紡株式会社 光電変換素子及びその製造方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0298955A (ja) * 1988-10-06 1990-04-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2743566B2 (ja) * 1990-09-21 1998-04-22 日立電線株式会社 エッチングにより微細パターンを形成する方法
JP3286002B2 (ja) * 1993-03-25 2002-05-27 オリンパス光学工業株式会社 薄膜形成装置
JP3879312B2 (ja) * 1999-03-31 2007-02-14 セイコーエプソン株式会社 膜の形成方法、及びデバイスの製造方法
US6304999B1 (en) * 2000-10-23 2001-10-16 Advanced Micro Devices, Inc. Method and apparatus for embedded process control framework in tool systems
JP2002356780A (ja) * 2001-05-30 2002-12-13 Sekisui Chem Co Ltd 常圧プラズマ処理法における膜厚制御方法
JP2003077782A (ja) * 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP2003257866A (ja) * 2002-03-05 2003-09-12 Nippon Soda Co Ltd 薄膜パターンの製造方法
JP3951044B2 (ja) * 2002-03-13 2007-08-01 セイコーエプソン株式会社 成膜方法、並びにその方法を用いて製造したデバイス
JP2003290709A (ja) * 2002-03-29 2003-10-14 Fuji Photo Film Co Ltd マット形成装置及び平版印刷版の製造方法
JP4014142B2 (ja) * 2002-05-02 2007-11-28 独立行政法人科学技術振興機構 光分解性シランカップリング剤
JP2004076076A (ja) * 2002-08-14 2004-03-11 Konica Minolta Holdings Inc 大気圧プラズマ処理装置及び大気圧プラズマ処理方法
JP4892973B2 (ja) * 2003-02-18 2012-03-07 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ素子の製造方法
JP4244686B2 (ja) * 2003-04-18 2009-03-25 セイコーエプソン株式会社 パターン形成方法
JP3941066B2 (ja) * 2003-09-11 2007-07-04 俊次 村野 ライン状均一吐出装置、霧化装置、薄膜形成装置、パターン形成装置、三次元造形装置および洗浄装置。
JP4387775B2 (ja) * 2003-11-25 2009-12-24 株式会社リコー 有機薄膜の形成方法及びその形成装置
JP5124760B2 (ja) * 2004-04-19 2013-01-23 静雄 藤田 成膜方法及び成膜装置
JP4946860B2 (ja) * 2005-02-17 2012-06-06 コニカミノルタホールディングス株式会社 ガスバリアフィルム及びその製造方法、並びに該ガスバリアフィルムを用いた、有機el素子用樹脂基材、有機el素子
JP2006253216A (ja) * 2005-03-08 2006-09-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007206552A (ja) * 2006-02-03 2007-08-16 Asahi Glass Co Ltd 光処理基材の製造方法
JP2008050321A (ja) * 2006-08-28 2008-03-06 Univ Kanagawa 光分解性カップリング剤
JP2008094647A (ja) * 2006-10-10 2008-04-24 Fujikura Ltd 成膜装置
JP5177617B2 (ja) * 2006-12-25 2013-04-03 独立行政法人産業技術総合研究所 酸化シリコン薄膜形成装置
WO2008129819A1 (ja) 2007-04-13 2008-10-30 Nikon Corporation 表示素子の製造方法、表示素子の製造装置、及び表示素子
JP4637872B2 (ja) * 2007-06-12 2011-02-23 シャープ株式会社 配線構造およびその製造方法
JPWO2009031423A1 (ja) * 2007-09-03 2010-12-09 コニカミノルタホールディングス株式会社 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ
JP2009065012A (ja) * 2007-09-07 2009-03-26 Konica Minolta Holdings Inc 薄膜トランジスタ
KR20110028473A (ko) * 2008-06-30 2011-03-18 가부시키가이샤 니콘 표시 소자의 제조 방법 및 제조 장치, 박막 트랜지스터의 제조 방법 및 제조 장치, 및 회로 형성 장치
JP2010258206A (ja) * 2009-04-24 2010-11-11 Konica Minolta Holdings Inc 金属酸化物半導体の製造方法、金属酸化物半導体及びこれを用いた半導体素子、薄膜トランジスタ
JP5534552B2 (ja) * 2009-05-20 2014-07-02 株式会社ニコン パターン形成装置、パターン形成方法、デバイス製造装置、及びデバイス製造方法
JP5360571B2 (ja) * 2009-08-12 2013-12-04 株式会社ニコン 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム
WO2011102053A1 (ja) * 2010-02-18 2011-08-25 富士電機ホールディングス株式会社 成膜装置及び成膜方法、並びに薄膜太陽電池の製造装置及び製造方法
JP2011181591A (ja) * 2010-02-26 2011-09-15 Sumitomo Chemical Co Ltd 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法
CN102782580B (zh) * 2010-02-26 2015-04-22 株式会社尼康 图案形成方法
JP5273074B2 (ja) * 2010-03-19 2013-08-28 コニカミノルタ株式会社 バリアフィルムの製造方法
WO2011126132A1 (ja) * 2010-04-09 2011-10-13 株式会社ニコン 基板処理装置
JP5573521B2 (ja) * 2010-09-09 2014-08-20 セイコーエプソン株式会社 液体吐出装置及び液体吐出方法
KR102057813B1 (ko) * 2012-05-24 2019-12-19 가부시키가이샤 니콘 미스트 성막장치

Also Published As

Publication number Publication date
KR101967589B1 (ko) 2019-04-09
WO2013176222A1 (ja) 2013-11-28
CN107256824A (zh) 2017-10-17
CN104488071A (zh) 2015-04-01
JP2020074411A (ja) 2020-05-14
CN104488071B (zh) 2017-10-13
JP2019023354A (ja) 2019-02-14
JP6424940B2 (ja) 2018-11-21
KR102314386B1 (ko) 2021-10-19
JP6428896B2 (ja) 2018-11-28
KR101823728B1 (ko) 2018-01-30
KR20190039609A (ko) 2019-04-12
JP2018067717A (ja) 2018-04-26
JP6638792B2 (ja) 2020-01-29
KR20180006489A (ko) 2018-01-17
JP2018076591A (ja) 2018-05-17
KR102057813B1 (ko) 2019-12-19
KR20200105981A (ko) 2020-09-09
KR20150016947A (ko) 2015-02-13
JP7222416B2 (ja) 2023-02-15
JPWO2013176222A1 (ja) 2016-01-14
JP2022020691A (ja) 2022-02-01
KR20190141027A (ko) 2019-12-20

Similar Documents

Publication Publication Date Title
JP6428896B2 (ja) 基板処理方法
US9310656B2 (en) Method for manufacturing display element, manufacturing apparatus of display element and display device
CN107253394B (zh) 转印装置以及基板处理装置
CN101400599B (zh) 各向异性形状部件的安装方法
JP2007150258A (ja) パターン形成方法、膜構造体、電気光学装置及び電子機器
CN111149232B (zh) 碳纳米管薄膜晶体管底板的制造及其显示集成
JP2002367774A (ja) 薄膜パターン形成方法および薄膜パターン形成装置
KR20130027195A (ko) 그라핀 필름 및 패턴 제조 방법
US8857334B2 (en) Cleaning apparatuses for printing plates and printing apparatuses including the same
JP2007110048A (ja) インクジェット方式によるパターン形成方法・インクジェット方式によるパターン形成装置・電子素子アレイ・表示素子
KR102120040B1 (ko) 무에칭­인쇄형 마이크로 전극의 패턴을 형성하는 방법
JP5168029B2 (ja) 印刷装置及び印刷物の製造方法
KR101598340B1 (ko) 롤투롤 프린트 에칭 시스템
KR20170046278A (ko) 유기 박막 패턴 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160510

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170915

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171113

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171204

R150 Certificate of patent or registration of utility model

Ref document number: 6264285

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250